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JPS5536980A - Production of film by plasma reaction - Google Patents

Production of film by plasma reaction

Info

Publication number
JPS5536980A
JPS5536980A JP11034178A JP11034178A JPS5536980A JP S5536980 A JPS5536980 A JP S5536980A JP 11034178 A JP11034178 A JP 11034178A JP 11034178 A JP11034178 A JP 11034178A JP S5536980 A JPS5536980 A JP S5536980A
Authority
JP
Japan
Prior art keywords
substrate
gas
plasma reaction
film
sih4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11034178A
Other languages
Japanese (ja)
Other versions
JPS5856249B2 (en
Inventor
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP11034178A priority Critical patent/JPS5856249B2/en
Publication of JPS5536980A publication Critical patent/JPS5536980A/en
Publication of JPS5856249B2 publication Critical patent/JPS5856249B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:When a thin film is formed by gas plasma reaction on surface of a substrate in vacuum, to improve quality of grown film by reacting a chemical compound having etching property continously or intermittently or alternatively with a chemical compound for film forming. CONSTITUTION:Si substrate is housed in a parallel flat plate electrode type plasma reaction crystal growth device and 0.05 Torr vacuum is made in the device. Next, Si substrate is heated to 300 deg.C and SiH4 gas and CF4 gas flow at fixed flow amount and high frequency output is applied between the parallel plate electrodes to grow Si crystal on the Si substrate. There, as CF4 gas has etching function to Si, the substrate is cleaned. Most effective ratio of current amount of SiH4 and CF4 gases will be 1/50-1/100. The gas such as CCl4, SF4, Cl2, and CH2Cl2 are also effectively used instead of CF4.
JP11034178A 1978-09-07 1978-09-07 Method for manufacturing thin films by plasma reaction Expired JPS5856249B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11034178A JPS5856249B2 (en) 1978-09-07 1978-09-07 Method for manufacturing thin films by plasma reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11034178A JPS5856249B2 (en) 1978-09-07 1978-09-07 Method for manufacturing thin films by plasma reaction

Publications (2)

Publication Number Publication Date
JPS5536980A true JPS5536980A (en) 1980-03-14
JPS5856249B2 JPS5856249B2 (en) 1983-12-14

Family

ID=14533289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11034178A Expired JPS5856249B2 (en) 1978-09-07 1978-09-07 Method for manufacturing thin films by plasma reaction

Country Status (1)

Country Link
JP (1) JPS5856249B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856325A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Formation of plasma cvd film
FR2518122A1 (en) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc PROCESS FOR PRODUCING ALLOYS AND PHOTOSENSITIVE AMORPHOUS DEVICES BY CHEMICAL PHASE DEPOSITION
JPS58128727A (en) * 1982-01-27 1983-08-01 Nippon Denso Co Ltd Formation of thin film
US4728529A (en) * 1984-06-12 1988-03-01 Battelle-Institut E.V. Method of producing diamond-like carbon-coatings
JPS6362238A (en) * 1986-09-02 1988-03-18 Toshiba Corp Depositing method of thin film
JPH01168864A (en) * 1987-12-23 1989-07-04 Anelva Corp Formation of metal film
US5268070A (en) * 1991-01-22 1993-12-07 Sony Corporation Dry etching method
US5354421A (en) * 1991-01-22 1994-10-11 Sony Corporation Dry etching method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856325A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Formation of plasma cvd film
FR2518122A1 (en) * 1981-12-16 1983-06-17 Energy Conversion Devices Inc PROCESS FOR PRODUCING ALLOYS AND PHOTOSENSITIVE AMORPHOUS DEVICES BY CHEMICAL PHASE DEPOSITION
JPS58128727A (en) * 1982-01-27 1983-08-01 Nippon Denso Co Ltd Formation of thin film
US4728529A (en) * 1984-06-12 1988-03-01 Battelle-Institut E.V. Method of producing diamond-like carbon-coatings
JPS6362238A (en) * 1986-09-02 1988-03-18 Toshiba Corp Depositing method of thin film
JPH01168864A (en) * 1987-12-23 1989-07-04 Anelva Corp Formation of metal film
JPH0520503B2 (en) * 1987-12-23 1993-03-19 Anelva Corp
US5268070A (en) * 1991-01-22 1993-12-07 Sony Corporation Dry etching method
US5354421A (en) * 1991-01-22 1994-10-11 Sony Corporation Dry etching method
KR100238691B1 (en) * 1991-01-22 2000-01-15 이데이 노부유끼 Dry etching method

Also Published As

Publication number Publication date
JPS5856249B2 (en) 1983-12-14

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