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JPS5529113A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5529113A
JPS5529113A JP10178778A JP10178778A JPS5529113A JP S5529113 A JPS5529113 A JP S5529113A JP 10178778 A JP10178778 A JP 10178778A JP 10178778 A JP10178778 A JP 10178778A JP S5529113 A JPS5529113 A JP S5529113A
Authority
JP
Japan
Prior art keywords
transistor
layers
layer
breakdown
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10178778A
Other languages
Japanese (ja)
Inventor
Takashi Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10178778A priority Critical patent/JPS5529113A/en
Publication of JPS5529113A publication Critical patent/JPS5529113A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the opposite-directional breakdown of transistors without using any external fitting parts. CONSTITUTION:The p-layers 3 and 4 are provided on the n-layer 2 on n<+>-layer 1, n<+>-layers 5 and 6 are made in said layers 3 and 4, and said p-layers 3 and n-layer 6 are interconnected by means of the insulating layer on insulating film. Thereby, a base-open transistor (q) is formed to prevent opposite-directional breakdown at a base junction pad portion in addition to a main transistor Q. Said transistors (q) and Q have a collector in common. Even when the withhold voltage value decreases to BVCEO due to the flow of large current through said transistor Q, the breakdown thereof is prevented since said transistor with a withhold voltage value equal to VBCEO of said transistor Q is connected between base collectors yields.
JP10178778A 1978-08-23 1978-08-23 Semiconductor device Pending JPS5529113A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10178778A JPS5529113A (en) 1978-08-23 1978-08-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10178778A JPS5529113A (en) 1978-08-23 1978-08-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5529113A true JPS5529113A (en) 1980-03-01

Family

ID=14309879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10178778A Pending JPS5529113A (en) 1978-08-23 1978-08-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5529113A (en)

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