[go: up one dir, main page]

JPS5561062A - Schottky barrier diode built-in transistor - Google Patents

Schottky barrier diode built-in transistor

Info

Publication number
JPS5561062A
JPS5561062A JP13389378A JP13389378A JPS5561062A JP S5561062 A JPS5561062 A JP S5561062A JP 13389378 A JP13389378 A JP 13389378A JP 13389378 A JP13389378 A JP 13389378A JP S5561062 A JPS5561062 A JP S5561062A
Authority
JP
Japan
Prior art keywords
transistor
electrode
schottky barrier
base
built
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13389378A
Other languages
Japanese (ja)
Inventor
Toshio Shigekane
Shinichi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13389378A priority Critical patent/JPS5561062A/en
Publication of JPS5561062A publication Critical patent/JPS5561062A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To prepare a high reliable Schottky barrier diode built-in transistor on a possibly smallest semiconductor with a stabilized process. CONSTITUTION:On an n-type Si piece, npn transistors 2, 3 are set up constituting Darlington connection holding a collector layer in common. Base electrodes 5, 7 are in ohmic connection with their respective p<+>-type base layers. An electrode 8 at Pt or Mo is forming Schottky barrier relating with p-layer 9 of a transistor 3 thus constituting diode with an electrode <+>8 and an electrode <->7. When the electrode 8 is connected with the base electrode 5 of the transistor 2 through an insulating film, Schottky barrier diode is built-in between the base and the emitter of the transistor 2 in the foregoing paragraph. According to said constitution, there is no need of additional diffusion and a highly reliable Scottky diode built-in transistor can be provided with most simple and stabilized process requiring solely connection between electrodes.
JP13389378A 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor Pending JPS5561062A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13389378A JPS5561062A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13389378A JPS5561062A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Publications (1)

Publication Number Publication Date
JPS5561062A true JPS5561062A (en) 1980-05-08

Family

ID=15115557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13389378A Pending JPS5561062A (en) 1978-10-31 1978-10-31 Schottky barrier diode built-in transistor

Country Status (1)

Country Link
JP (1) JPS5561062A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266671A (en) * 1985-09-19 1987-03-26 Sanyo Electric Co Ltd Darlington transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266671A (en) * 1985-09-19 1987-03-26 Sanyo Electric Co Ltd Darlington transistor

Similar Documents

Publication Publication Date Title
GB871307A (en) Transistor with double collector
GB1169188A (en) Method of Manufacturing Semiconductor Devices
GB949646A (en) Improvements in or relating to semiconductor devices
JPS5561062A (en) Schottky barrier diode built-in transistor
JPS6451658A (en) Semiconductor device
JPS5632763A (en) Semiconductor device
JPS55165673A (en) Semiconductor device
JPS55158663A (en) Transistor
JPS55162223A (en) Semiconductor device and its preparation
EP0077921A3 (en) Semiconductor device
JPS5687360A (en) Transistor device
JPS5538080A (en) Semiconductor device
JPS5617067A (en) Semiconductor switch
JPS57113276A (en) Semiconductor memory device
JPS5658260A (en) Darlington junction type transistor and production thereof
JPS54107685A (en) Semiconductor integrated circuit device
JPS5710968A (en) Semiconductor device
GB964431A (en) Improvements in or relating to transistors
GB1172109A (en) Improvements relating to Semiconductor Devices
JPS55103760A (en) Planar semiconductor device
JPS54142080A (en) Semiconductor device
JPS55111157A (en) Semiconductor integrated circuit device
JPS5654062A (en) Production of semiconductor device
JPS6482560A (en) Lateral bipolar transistor
JPS5617064A (en) Transistor