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JPS5632763A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5632763A
JPS5632763A JP10783779A JP10783779A JPS5632763A JP S5632763 A JPS5632763 A JP S5632763A JP 10783779 A JP10783779 A JP 10783779A JP 10783779 A JP10783779 A JP 10783779A JP S5632763 A JPS5632763 A JP S5632763A
Authority
JP
Japan
Prior art keywords
type
layer
region
base
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10783779A
Other languages
Japanese (ja)
Other versions
JPS6350870B2 (en
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10783779A priority Critical patent/JPS5632763A/en
Publication of JPS5632763A publication Critical patent/JPS5632763A/en
Publication of JPS6350870B2 publication Critical patent/JPS6350870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a PNP type transistor having fast switching time by inserting a Schottky barrier diode into the collector and base junction of the transistor, thereby shortening the storage time thereof. CONSTITUTION:The Schottky barrier diode D1 is connected between the base and emitter junction of the PNP type transistor Q1. This can be done by diffusing the first N<+> type buried layer 6 in a P type semiconductor substrate 5 and epitaxially growing an N type layer 4 in the entire surface including the layer 6. Then, the second P type buried layer 3 is diffused to become a collector region in the layer 4, the peripheral edge is erected and exposed on the surface of the layer 4, and the portion of the layer 4 surrounded by the layer 3 is used as the N type base region 7. Thereafter, a P type emitter region 1, a P type guard ring 9 becoming a closed circuit and an N type base contact region 2 are respectively diffused in the region 7, and a Schottky barrier diode forming electrode 8 is mounted on the guard ring 9 thereof.
JP10783779A 1979-08-24 1979-08-24 Semiconductor device Granted JPS5632763A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10783779A JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10783779A JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5632763A true JPS5632763A (en) 1981-04-02
JPS6350870B2 JPS6350870B2 (en) 1988-10-12

Family

ID=14469293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10783779A Granted JPS5632763A (en) 1979-08-24 1979-08-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5632763A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229158A (en) * 1985-07-29 1987-02-07 モトロ−ラ・インコ−ポレ−テツド Integrated circuit device containing voltage clamp circuit
JP2012506630A (en) * 2008-10-24 2012-03-15 エプコス アクチエンゲゼルシャフト Bipolar transistor having n-type base and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6229158A (en) * 1985-07-29 1987-02-07 モトロ−ラ・インコ−ポレ−テツド Integrated circuit device containing voltage clamp circuit
JP2012506630A (en) * 2008-10-24 2012-03-15 エプコス アクチエンゲゼルシャフト Bipolar transistor having n-type base and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6350870B2 (en) 1988-10-12

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