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JPS52103976A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS52103976A
JPS52103976A JP2034676A JP2034676A JPS52103976A JP S52103976 A JPS52103976 A JP S52103976A JP 2034676 A JP2034676 A JP 2034676A JP 2034676 A JP2034676 A JP 2034676A JP S52103976 A JPS52103976 A JP S52103976A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
transistor
constructing
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2034676A
Other languages
Japanese (ja)
Inventor
Hideo Asahina
Hajime Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2034676A priority Critical patent/JPS52103976A/en
Publication of JPS52103976A publication Critical patent/JPS52103976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To make up the both of the transistors in a simple structure by constructing the collector of the bypolar transistor and the channel area of the junction type field effect transistor with a diffusion layer in low impurity density which is commonly controlled.
JP2034676A 1976-02-26 1976-02-26 Semiconductor integrated circuit Pending JPS52103976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2034676A JPS52103976A (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2034676A JPS52103976A (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS52103976A true JPS52103976A (en) 1977-08-31

Family

ID=12024559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2034676A Pending JPS52103976A (en) 1976-02-26 1976-02-26 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS52103976A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146583A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Semiconductor device
JPS5555572A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Method of fabricating junction field effect transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54146583A (en) * 1978-05-09 1979-11-15 Mitsubishi Electric Corp Semiconductor device
JPS5555572A (en) * 1978-10-20 1980-04-23 Hitachi Ltd Method of fabricating junction field effect transistor

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