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JPS5522871A - Semiconductor light detector - Google Patents

Semiconductor light detector

Info

Publication number
JPS5522871A
JPS5522871A JP9653578A JP9653578A JPS5522871A JP S5522871 A JPS5522871 A JP S5522871A JP 9653578 A JP9653578 A JP 9653578A JP 9653578 A JP9653578 A JP 9653578A JP S5522871 A JPS5522871 A JP S5522871A
Authority
JP
Japan
Prior art keywords
layer
region
type semiconductor
regions
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9653578A
Other languages
Japanese (ja)
Other versions
JPS58193B2 (en
Inventor
Susumu Hata
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP53096535A priority Critical patent/JPS58193B2/en
Publication of JPS5522871A publication Critical patent/JPS5522871A/en
Publication of JPS58193B2 publication Critical patent/JPS58193B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To increase a light detecting output and raise a responsive speed more higher by improving the characteristic of a semiconductor layer in each semiconductor region.
CONSTITUTION: An n-type semiconductor layer 2 is formed on an n-type semiconductor layer 1, p-type semiconductor regions 3 and 4 in the layer 2 keeping a predetermined distance from the layer 1 and n-type semiconductor regions 5 and 6 are formed in the layers 3 and 4 in the opposite side of the layer 1, and terminals 7 and 8 are provided in the layer 1 and region 6. A PIN photodiode H having the layer 1 for the N layer, the layer 2 for the I layer and the region 3 for the P layer is formed to form NPN transistors T1 and T2 by the layers 1 and 2, the regions 4 and 6 and the regions 3 and 5, and the region 5 is connected by a wiring 9 to the region 4. A specific resistance on the layer 2 is selectively set greater than the layer 1 and region 3, a thickness D of a region 3F is selectively set greater than the characteristic collecting wavelength of the layer 2 to the light L incident to the layer 2, the impurity for compensating a carrier density is introduced to the layer 2, and the increasing of the detecting output and the responsive speed can be materialized.
COPYRIGHT: (C)1980,JPO&Japio
JP53096535A 1978-08-08 1978-08-08 Semiconductor optical detection device Expired JPS58193B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53096535A JPS58193B2 (en) 1978-08-08 1978-08-08 Semiconductor optical detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53096535A JPS58193B2 (en) 1978-08-08 1978-08-08 Semiconductor optical detection device

Publications (2)

Publication Number Publication Date
JPS5522871A true JPS5522871A (en) 1980-02-18
JPS58193B2 JPS58193B2 (en) 1983-01-05

Family

ID=14167807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53096535A Expired JPS58193B2 (en) 1978-08-08 1978-08-08 Semiconductor optical detection device

Country Status (1)

Country Link
JP (1) JPS58193B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131567A (en) * 1985-12-03 1987-06-13 Matsushita Electronics Corp solid-state imaging device
JPS6373568A (en) * 1986-09-16 1988-04-04 Matsushita Electronics Corp photo transistor
JPH02132859A (en) * 1988-06-06 1990-05-22 Canon Inc Photoelectric conversion device
JPH08335712A (en) * 1995-04-05 1996-12-17 Matsushita Electron Corp Photodetector and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6597551B2 (en) 2016-10-21 2019-10-30 株式会社ダイフク Goods transport equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310434A (en) * 1976-07-16 1978-01-30 Fujitsu Ltd Transfer medium

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5310434A (en) * 1976-07-16 1978-01-30 Fujitsu Ltd Transfer medium

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62131567A (en) * 1985-12-03 1987-06-13 Matsushita Electronics Corp solid-state imaging device
JPS6373568A (en) * 1986-09-16 1988-04-04 Matsushita Electronics Corp photo transistor
JPH02132859A (en) * 1988-06-06 1990-05-22 Canon Inc Photoelectric conversion device
JPH08335712A (en) * 1995-04-05 1996-12-17 Matsushita Electron Corp Photodetector and its manufacture

Also Published As

Publication number Publication date
JPS58193B2 (en) 1983-01-05

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