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JPS561318A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS561318A
JPS561318A JP7653279A JP7653279A JPS561318A JP S561318 A JPS561318 A JP S561318A JP 7653279 A JP7653279 A JP 7653279A JP 7653279 A JP7653279 A JP 7653279A JP S561318 A JPS561318 A JP S561318A
Authority
JP
Japan
Prior art keywords
electrode region
photoelectric conversion
electrode
light receiver
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7653279A
Other languages
Japanese (ja)
Other versions
JPS617242B2 (en
Inventor
Seishiro Yoshioka
Yutaka Hirai
Tadaharu Fukuda
Masaki Fukaya
Takashi Nakagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP7653279A priority Critical patent/JPS561318A/en
Priority to US06/160,170 priority patent/US4369372A/en
Publication of JPS561318A publication Critical patent/JPS561318A/en
Publication of JPS617242B2 publication Critical patent/JPS617242B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To extend the length of a light receiving face, increase the sensitivity of a photoelectric converter and thus reduce the size of a device by forming light receiver layers and semiconductor layers separately on electrode regions which are in one array form on a substrate and providing an electrode region on each surface of them. CONSTITUTION:On the surfaces of n electrode regions A formed in one line array form on a substrate 203, photoelectric conversion elements 201 and diode elements 202 which construct a photoelectric conversion part and a crosstalk preventing part respectively are formed by providing a light receiver layer 205 and a semiconductor layer 207 separately and forming electrode layers B206, C208 on their surfaces respectively. The electrode region A forms ohmic junctions with the light receiver layer 205 and the semiconductor layer 207, the light receiver layer 205 and the electrode region B, and the semiconductor layer 207 and the electrode region C form Shottky junctions. As light information is inputted to the photoelectric conversion elements 201 from the electrode region B side, the electrode region B is made transparent. By so doing, a compact device with a long light receiving face and a highly sensitive photoelectric conversion part can be obtained.
JP7653279A 1979-06-18 1979-06-18 Photoelectric conversion device Granted JPS561318A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7653279A JPS561318A (en) 1979-06-18 1979-06-18 Photoelectric conversion device
US06/160,170 US4369372A (en) 1979-06-18 1980-06-17 Photo electro transducer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7653279A JPS561318A (en) 1979-06-18 1979-06-18 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS561318A true JPS561318A (en) 1981-01-09
JPS617242B2 JPS617242B2 (en) 1986-03-05

Family

ID=13607882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7653279A Granted JPS561318A (en) 1979-06-18 1979-06-18 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS561318A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element
JPS5882564A (en) * 1981-11-12 1983-05-18 Fuji Xerox Co Ltd Amorphous silicon photo receiving element
JPS58111490A (en) * 1981-12-24 1983-07-02 Fuji Xerox Co Ltd Solid-state image pickup device
JPS59151476A (en) * 1983-02-18 1984-08-29 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60246672A (en) * 1983-11-01 1985-12-06 Fuji Xerox Co Ltd Manufacture of photoelectric conversion element
JPS6367772A (en) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd Image sensor and manufacture of same
JPS6379542U (en) * 1986-11-12 1988-05-26
JPH0228372A (en) * 1988-04-20 1990-01-30 Konica Corp Image sensor
US6157072A (en) * 1991-04-27 2000-12-05 Kanegafuchi Chemical Industry Co., Ltd. Image sensor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element
JPH0159744B2 (en) * 1980-01-21 1989-12-19 Hitachi Ltd
JPS5882564A (en) * 1981-11-12 1983-05-18 Fuji Xerox Co Ltd Amorphous silicon photo receiving element
JPS58111490A (en) * 1981-12-24 1983-07-02 Fuji Xerox Co Ltd Solid-state image pickup device
JPS59151476A (en) * 1983-02-18 1984-08-29 Fuji Xerox Co Ltd Photoelectric conversion element
JPS60246672A (en) * 1983-11-01 1985-12-06 Fuji Xerox Co Ltd Manufacture of photoelectric conversion element
JPH0451984B2 (en) * 1983-11-01 1992-08-20 Fuji Xerox Co Ltd
JPS6367772A (en) * 1986-09-09 1988-03-26 Fuji Xerox Co Ltd Image sensor and manufacture of same
JPS6379542U (en) * 1986-11-12 1988-05-26
JPH0228372A (en) * 1988-04-20 1990-01-30 Konica Corp Image sensor
US6157072A (en) * 1991-04-27 2000-12-05 Kanegafuchi Chemical Industry Co., Ltd. Image sensor

Also Published As

Publication number Publication date
JPS617242B2 (en) 1986-03-05

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