JPS6449282A - Integrated circuit device with built-in photodiode - Google Patents
Integrated circuit device with built-in photodiodeInfo
- Publication number
- JPS6449282A JPS6449282A JP62206872A JP20687287A JPS6449282A JP S6449282 A JPS6449282 A JP S6449282A JP 62206872 A JP62206872 A JP 62206872A JP 20687287 A JP20687287 A JP 20687287A JP S6449282 A JPS6449282 A JP S6449282A
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- deposited
- film
- built
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To prevent the multiple reflection and to obtain a highly reliable integrated circuit device with a built-in photodiode by a method wherein an antireflection film is deposited on the photodiode part and its upper part is sealed directly by a transparent resin. CONSTITUTION:A thermal nitride film 10 acting as an antireflection film is deposited on an (n) epitaxial layer 3 in a photodiode part with a prescribed film thickness, e.g. with a thickness of lambda/(4nr)approx.=700Angstrom (where nr is a refractive index of the thermal nitride film). If the thermal nitride film 10 is deposited in this manner, the refractive index becomes large as the incident light progresses; accordingly, the light is hardly reflected. By this setup, it is possible to make an irregularity in a transfer function very small. In addition, if the photodiode part is constituted to be a Schottky type, a platinum layer may be used as the antireflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206872A JPS6449282A (en) | 1987-08-19 | 1987-08-19 | Integrated circuit device with built-in photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62206872A JPS6449282A (en) | 1987-08-19 | 1987-08-19 | Integrated circuit device with built-in photodiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6449282A true JPS6449282A (en) | 1989-02-23 |
Family
ID=16530436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62206872A Pending JPS6449282A (en) | 1987-08-19 | 1987-08-19 | Integrated circuit device with built-in photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6449282A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180269A (en) * | 1990-11-14 | 1992-06-26 | Sharp Corp | Photodetector with built-in circuit |
| JPH04271173A (en) * | 1991-02-27 | 1992-09-28 | Sanyo Electric Co Ltd | Optical semiconductor device |
| US5258630A (en) * | 1991-01-17 | 1993-11-02 | Eastman Kodak Company | Light-emitting diode with non-reflective diffusion region periphery |
| DE10239643B3 (en) * | 2002-08-29 | 2004-06-17 | X-Fab Semiconductor Foundries Ag | Method for passivation of CMOS or BiCMOS ICs with integrated photosensitive structures |
| DE10239642B3 (en) * | 2002-08-29 | 2004-06-24 | X-Fab Semiconductor Foundries Ag | Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit |
-
1987
- 1987-08-19 JP JP62206872A patent/JPS6449282A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04180269A (en) * | 1990-11-14 | 1992-06-26 | Sharp Corp | Photodetector with built-in circuit |
| US5258630A (en) * | 1991-01-17 | 1993-11-02 | Eastman Kodak Company | Light-emitting diode with non-reflective diffusion region periphery |
| JPH04271173A (en) * | 1991-02-27 | 1992-09-28 | Sanyo Electric Co Ltd | Optical semiconductor device |
| DE10239643B3 (en) * | 2002-08-29 | 2004-06-17 | X-Fab Semiconductor Foundries Ag | Method for passivation of CMOS or BiCMOS ICs with integrated photosensitive structures |
| DE10239642B3 (en) * | 2002-08-29 | 2004-06-24 | X-Fab Semiconductor Foundries Ag | Complementary metal oxide semiconductor/bipolar complementary metal oxide semiconductor - integrated circuit for camera chip has single individual layer as last layer of passivation system sealing off integrated circuit |
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