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JPS55102280A - Infrared charge transfer device - Google Patents

Infrared charge transfer device

Info

Publication number
JPS55102280A
JPS55102280A JP1021379A JP1021379A JPS55102280A JP S55102280 A JPS55102280 A JP S55102280A JP 1021379 A JP1021379 A JP 1021379A JP 1021379 A JP1021379 A JP 1021379A JP S55102280 A JPS55102280 A JP S55102280A
Authority
JP
Japan
Prior art keywords
region
electrode
band width
impurity density
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1021379A
Other languages
Japanese (ja)
Other versions
JPS5846069B2 (en
Inventor
Hiroshi Takigawa
Shoji Doi
Soichi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP54010213A priority Critical patent/JPS5846069B2/en
Publication of JPS55102280A publication Critical patent/JPS55102280A/en
Publication of JPS5846069B2 publication Critical patent/JPS5846069B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To simplify the bonding process of an infrared charge transfer device by forming a semiconductor substrate of multi-semiconductor material having a high impurity density layer including a narrow inhibiting band width and a low impurity density layer including a wide inhibiting band width and forming a transfer electrode at the low density layer side and bias electrodes at both layers. CONSTITUTION:A HgCdTe substrate 4 is formed of an n-type region 1 having approx. 10<15>/cm<3> of impurity density and 0.1eV of narrow forbidden band width and an n-type region 2 having approx. 10<12>/cm<3> of impurity density and 0.3eV of wide forbidden band width, and a hetero junction 3 is formed in the boundary between the regions 1 and 2. Then, a ZnS layer 5 becoming a surface protective layer is coated on the region 2, transfer gate electrodes 6a-6c are formed on the layer 5, and the electrodes 6a-6c are simultaneously connected to the electrode 11 of the region 2. The electrode 1 is connected through a power supply V to the electrode 9 on the surface of the region 1, infrared rays are irradiated to the surface of the region 1, and a potential well 7 is thus formed in the region 2. Since the photoelectric converting portion and a charge transfer portion are thus completely integrated, the bonding process may be largely simplified.
JP54010213A 1979-01-30 1979-01-30 Infrared charge transfer device Expired JPS5846069B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54010213A JPS5846069B2 (en) 1979-01-30 1979-01-30 Infrared charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54010213A JPS5846069B2 (en) 1979-01-30 1979-01-30 Infrared charge transfer device

Publications (2)

Publication Number Publication Date
JPS55102280A true JPS55102280A (en) 1980-08-05
JPS5846069B2 JPS5846069B2 (en) 1983-10-14

Family

ID=11743978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54010213A Expired JPS5846069B2 (en) 1979-01-30 1979-01-30 Infrared charge transfer device

Country Status (1)

Country Link
JP (1) JPS5846069B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138186A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Infrared ray detector
JPS57204684A (en) * 1981-06-08 1982-12-15 Texas Instruments Inc Method and device for forming infrared image
JPS60183767A (en) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp Photodetection semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203271U (en) * 1985-06-11 1986-12-20
JPH0426856Y2 (en) * 1985-09-06 1992-06-26

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125626A (en) * 1974-03-19 1975-10-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50125626A (en) * 1974-03-19 1975-10-02

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138186A (en) * 1981-02-20 1982-08-26 Fujitsu Ltd Infrared ray detector
JPS57204684A (en) * 1981-06-08 1982-12-15 Texas Instruments Inc Method and device for forming infrared image
JPH0338794B2 (en) * 1981-06-08 1991-06-11 Texas Instruments Inc
JPS60183767A (en) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp Photodetection semiconductor device

Also Published As

Publication number Publication date
JPS5846069B2 (en) 1983-10-14

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