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JPS55143067A - Manufacture of dual insulated gate field effect transistor - Google Patents

Manufacture of dual insulated gate field effect transistor

Info

Publication number
JPS55143067A
JPS55143067A JP15540978A JP15540978A JPS55143067A JP S55143067 A JPS55143067 A JP S55143067A JP 15540978 A JP15540978 A JP 15540978A JP 15540978 A JP15540978 A JP 15540978A JP S55143067 A JPS55143067 A JP S55143067A
Authority
JP
Japan
Prior art keywords
oxide film
film
region
polycrystalline
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15540978A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP15540978A priority Critical patent/JPS55143067A/en
Publication of JPS55143067A publication Critical patent/JPS55143067A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To reduce feed back capacitance by a method wherein an oxide film is perfolated to have two gate oxide films in a separated distance on a substrate and diffusion of impurity is performed through a polycrystalline film formed selectively as an opening and the gate oxide film. CONSTITUTION:A thick oxide film 2 on a p<->-type silicon substrate 1 is bored and gate oxide films 2G1, 2G2 are formed. At a region apart from these and in a specified distance and a region between them the oxide film 2 is perforated at a specified region, and a polycrystalline Si film 3 is formed selectively on these openings and gate oxide film regions. Next thereto n<+>-layers 4S, 5, 4D are formed by diffusion of phosphorus through the polycrystalline Si film 3. Next thereto they are covered with an oxide film, and electrode is built through the opening provided on it. By this constitution two FETs can be fabricated to occupy a small area with self- alignment action, and since two gate electrodes and region do not overlap, capacitance between the drain electrode 4D of the second FET and the substrate and feed back capacitance are extremely reduced, and stable operation is performed by eliminating self-oscillation.
JP15540978A 1978-12-13 1978-12-13 Manufacture of dual insulated gate field effect transistor Pending JPS55143067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15540978A JPS55143067A (en) 1978-12-13 1978-12-13 Manufacture of dual insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15540978A JPS55143067A (en) 1978-12-13 1978-12-13 Manufacture of dual insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS55143067A true JPS55143067A (en) 1980-11-08

Family

ID=15605344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15540978A Pending JPS55143067A (en) 1978-12-13 1978-12-13 Manufacture of dual insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55143067A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932474A (en) * 1972-07-24 1974-03-25
JPS501988A (en) * 1973-05-11 1975-01-10

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932474A (en) * 1972-07-24 1974-03-25
JPS501988A (en) * 1973-05-11 1975-01-10

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