JPS55133581A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS55133581A JPS55133581A JP4091679A JP4091679A JPS55133581A JP S55133581 A JPS55133581 A JP S55133581A JP 4091679 A JP4091679 A JP 4091679A JP 4091679 A JP4091679 A JP 4091679A JP S55133581 A JPS55133581 A JP S55133581A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- junction
- film
- distance
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To provide a stable and reliable junction characteristics of a semiconductor device by forming the distance from mesa top surface to a main junction shorter than the distance from the mesa top surface to a guard ring junction formed continuously to the main junction. CONSTITUTION:A p-type layer 12 and a pi-type layer 13 are formed on a substrate wafer 11. A diffused region 15 is then formed, and a p<+>-type region 16 is then formed thereon. After the oxide film on the surface is entirely removed, an oxide film 17 is formed by a vapor phase chemical reaction process, an unnecessary oxide film is removed, and a reflection preventive film SiO2 film 18 is formed thereafter by a CVD process. Subsequently, electrodes 19, 20 are formed thereon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4091679A JPS55133581A (en) | 1979-04-06 | 1979-04-06 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4091679A JPS55133581A (en) | 1979-04-06 | 1979-04-06 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55133581A true JPS55133581A (en) | 1980-10-17 |
Family
ID=12593817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4091679A Pending JPS55133581A (en) | 1979-04-06 | 1979-04-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55133581A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110098278A (en) * | 2019-04-18 | 2019-08-06 | 中国科学技术大学 | A kind of avalanche photodide diffusion structure, preparation method and diode component |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4863689A (en) * | 1971-11-22 | 1973-09-04 | ||
JPS5118157A (en) * | 1974-08-05 | 1976-02-13 | Hitachi Ltd | Sentakukino seigyokairo |
-
1979
- 1979-04-06 JP JP4091679A patent/JPS55133581A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4863689A (en) * | 1971-11-22 | 1973-09-04 | ||
JPS5118157A (en) * | 1974-08-05 | 1976-02-13 | Hitachi Ltd | Sentakukino seigyokairo |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110098278A (en) * | 2019-04-18 | 2019-08-06 | 中国科学技术大学 | A kind of avalanche photodide diffusion structure, preparation method and diode component |
CN110098278B (en) * | 2019-04-18 | 2021-04-23 | 中国科学技术大学 | A kind of avalanche photodiode diffusion structure, preparation method and diode device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5599722A (en) | Preparation of semiconductor device | |
JPS55133581A (en) | Semiconductor device | |
JPS5559759A (en) | Semiconductor device | |
JPS54161887A (en) | Schottky diode containing guard ring and its manufacture | |
JPS5717145A (en) | Semiconductor device and manufacture therefor | |
US4099997A (en) | Method of fabricating a semiconductor device | |
JPS5583264A (en) | Method of fabricating mos semiconductor device | |
JPS5578568A (en) | Manufacture of semiconductor device | |
JPS5550671A (en) | Manufacturing of variable capacitance element | |
JPS55146967A (en) | Semiconductor ic device | |
JPS5717167A (en) | Mesa type semiconductor device | |
JPS5534470A (en) | Production for solar battery | |
JPS57124427A (en) | Manufacture of semiconductor device | |
JPS5541751A (en) | Manufacturing semiconductor device | |
JPS5578571A (en) | Manufacture of semiconductor device | |
JPS54162484A (en) | Manufacture of semiconductor device | |
JPS5618476A (en) | Manufacture of semiconductor photodetector | |
JPS55138833A (en) | Manufacture of semiconductor device | |
JPS55154744A (en) | Semiconductor device | |
JPS55133542A (en) | Manufacturing method of mesa-type semiconductor device | |
JPS54132170A (en) | Photoetching method for semiconductor device | |
JPS56135964A (en) | Semiconductor device | |
JPS5612782A (en) | Manufacture of solar battery | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS5457877A (en) | Semiconductor device |