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JPS55133581A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55133581A
JPS55133581A JP4091679A JP4091679A JPS55133581A JP S55133581 A JPS55133581 A JP S55133581A JP 4091679 A JP4091679 A JP 4091679A JP 4091679 A JP4091679 A JP 4091679A JP S55133581 A JPS55133581 A JP S55133581A
Authority
JP
Japan
Prior art keywords
oxide film
junction
film
distance
top surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4091679A
Other languages
Japanese (ja)
Inventor
Hirobumi Ouchi
Toji Mukai
Sumio Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4091679A priority Critical patent/JPS55133581A/en
Publication of JPS55133581A publication Critical patent/JPS55133581A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To provide a stable and reliable junction characteristics of a semiconductor device by forming the distance from mesa top surface to a main junction shorter than the distance from the mesa top surface to a guard ring junction formed continuously to the main junction. CONSTITUTION:A p-type layer 12 and a pi-type layer 13 are formed on a substrate wafer 11. A diffused region 15 is then formed, and a p<+>-type region 16 is then formed thereon. After the oxide film on the surface is entirely removed, an oxide film 17 is formed by a vapor phase chemical reaction process, an unnecessary oxide film is removed, and a reflection preventive film SiO2 film 18 is formed thereafter by a CVD process. Subsequently, electrodes 19, 20 are formed thereon.
JP4091679A 1979-04-06 1979-04-06 Semiconductor device Pending JPS55133581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4091679A JPS55133581A (en) 1979-04-06 1979-04-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4091679A JPS55133581A (en) 1979-04-06 1979-04-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55133581A true JPS55133581A (en) 1980-10-17

Family

ID=12593817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4091679A Pending JPS55133581A (en) 1979-04-06 1979-04-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55133581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098278A (en) * 2019-04-18 2019-08-06 中国科学技术大学 A kind of avalanche photodide diffusion structure, preparation method and diode component

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863689A (en) * 1971-11-22 1973-09-04
JPS5118157A (en) * 1974-08-05 1976-02-13 Hitachi Ltd Sentakukino seigyokairo

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4863689A (en) * 1971-11-22 1973-09-04
JPS5118157A (en) * 1974-08-05 1976-02-13 Hitachi Ltd Sentakukino seigyokairo

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110098278A (en) * 2019-04-18 2019-08-06 中国科学技术大学 A kind of avalanche photodide diffusion structure, preparation method and diode component
CN110098278B (en) * 2019-04-18 2021-04-23 中国科学技术大学 A kind of avalanche photodiode diffusion structure, preparation method and diode device

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