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JPS56135964A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56135964A
JPS56135964A JP4088580A JP4088580A JPS56135964A JP S56135964 A JPS56135964 A JP S56135964A JP 4088580 A JP4088580 A JP 4088580A JP 4088580 A JP4088580 A JP 4088580A JP S56135964 A JPS56135964 A JP S56135964A
Authority
JP
Japan
Prior art keywords
region
layer
emitter
type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4088580A
Other languages
Japanese (ja)
Other versions
JPH0460338B2 (en
Inventor
Soichiro Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4088580A priority Critical patent/JPS56135964A/en
Publication of JPS56135964A publication Critical patent/JPS56135964A/en
Publication of JPH0460338B2 publication Critical patent/JPH0460338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a bipolar transistor with satisfactory high frequency characteristics and high reliability by a method wherein a base region of which electrode lead-out part is depressed in concave shape and an emitter region depressed in concave shape are formed, and a polycrystalline silicone electrode is formed. CONSTITUTION:Boron is selectively diffused on a surface of an N type silicon substrate 11 to form a P type base region 12. Then, an insulating film 13, a base contact part 20 of the base region 12 and the emitter forming region 21 are perforated by applying a plasma spatter etching. Then, a polycrystalline layer 14 containing arsenic in high concentration is formed in the emitter forming region 21, and a polysilicon layer 16 containing boron in high concentration is formed in the base contact part 20. Subsequently, an impurity is diffused to form an N<+> type emitter layer 15 and a P<+> type base contact layer 17, and SiO2 films 14', 16' on the polysilicon are removed to form the metal electrode.
JP4088580A 1980-03-28 1980-03-28 Semiconductor device Granted JPS56135964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4088580A JPS56135964A (en) 1980-03-28 1980-03-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4088580A JPS56135964A (en) 1980-03-28 1980-03-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56135964A true JPS56135964A (en) 1981-10-23
JPH0460338B2 JPH0460338B2 (en) 1992-09-25

Family

ID=12592958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4088580A Granted JPS56135964A (en) 1980-03-28 1980-03-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56135964A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077227A (en) * 1986-06-03 1991-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227355A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Diffusion layer formation method
JPS5285481A (en) * 1976-01-06 1977-07-15 Westinghouse Electric Corp Transistor
JPS5353255A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor device
JPS5377472A (en) * 1976-12-21 1978-07-08 Sony Corp Production of semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5227355A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Diffusion layer formation method
JPS5285481A (en) * 1976-01-06 1977-07-15 Westinghouse Electric Corp Transistor
JPS5353255A (en) * 1976-10-26 1978-05-15 Toshiba Corp Manufacture of semiconductor device
JPS5377472A (en) * 1976-12-21 1978-07-08 Sony Corp Production of semiconductor device
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077227A (en) * 1986-06-03 1991-12-31 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
JPH0460338B2 (en) 1992-09-25

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