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JPS57199251A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57199251A
JPS57199251A JP56085234A JP8523481A JPS57199251A JP S57199251 A JPS57199251 A JP S57199251A JP 56085234 A JP56085234 A JP 56085234A JP 8523481 A JP8523481 A JP 8523481A JP S57199251 A JPS57199251 A JP S57199251A
Authority
JP
Japan
Prior art keywords
type
region
substrate
potential
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56085234A
Other languages
Japanese (ja)
Other versions
JPS634715B2 (en
Inventor
Makoto Tachiki
Yasutaka Horiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56085234A priority Critical patent/JPS57199251A/en
Publication of JPS57199251A publication Critical patent/JPS57199251A/en
Publication of JPS634715B2 publication Critical patent/JPS634715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/311—Design considerations for internal polarisation in bipolar devices

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To supply a potential to a substrate without additional manufacturing process by a method wherein a base region which has the same type of conductivity as the substrate is formed on an epitaxial layer and netal electrodes are formed on the base region and the potential is to those electrodes. CONSTITUTION:After a buried N<+> type collector region 2 of the first N-P-N transistor 3 and a buried N<+> type collector region 9 of the second N-P-N transistor 8 are formed on a P type semiconductor substrat 1, an N<-> type epitaxial layer 22 is formed in a region 27. And grooves which reach the substrate 1 are provided to the main surface 20 and dielectric regions 15-18 are formed. Then a P type base region 11 of the transistor 8 and a P type region 23 are formed. And N<+> type emitter regions 6 and 12, N<+> type collector electrode diffusion regions 7 and 13 and on N<+> type region 24 are formed. Then metal electrodes 25 and 26 are formed on the regions 23 and 24. When a specified potential is given to the electrodes 25 and 26, the potential is given to the substrate 1.
JP56085234A 1981-06-01 1981-06-01 Semiconductor device Granted JPS57199251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56085234A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56085234A JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199251A true JPS57199251A (en) 1982-12-07
JPS634715B2 JPS634715B2 (en) 1988-01-30

Family

ID=13852866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56085234A Granted JPS57199251A (en) 1981-06-01 1981-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199251A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
US5032529A (en) * 1988-08-24 1991-07-16 Harris Corporation Trench gate VCMOS method of manufacture

Also Published As

Publication number Publication date
JPS634715B2 (en) 1988-01-30

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