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JPS56138958A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56138958A
JPS56138958A JP4164280A JP4164280A JPS56138958A JP S56138958 A JPS56138958 A JP S56138958A JP 4164280 A JP4164280 A JP 4164280A JP 4164280 A JP4164280 A JP 4164280A JP S56138958 A JPS56138958 A JP S56138958A
Authority
JP
Japan
Prior art keywords
hole
film
layer
silicon
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4164280A
Other languages
Japanese (ja)
Inventor
Satoshi Shinozaki
Sanehiro Sekiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4164280A priority Critical patent/JPS56138958A/en
Publication of JPS56138958A publication Critical patent/JPS56138958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To manufacture a Schottky barrier diode of sole aluminum by opening a hole at an insulating film on a silicon substrate, devising the silicon film disposing position at the periphery, covering an aluminum film thereon and heat treating it. CONSTITUTION:An n type epitaxial layer 3 is formed on a silicon substrate 1, selectively diffused, and then a silicon oxide film of insulating film 7 and a polycrystalline silicon layer P are formed. A hole 12 for forming a Schottky barrier is formed in the vicinity of the juction, and a polycrystalline silicon layer P is formed at the periphery of the hole 12. An aluminum film 13 is covered on the whole surface of the layer 9 including the hole 12. It is then heat treated in forming gas atmosphere, An Si Schottky junction 14 is formed on the surface of the n type epitaxial layer 3 exposed through the hole 12, and Al-p type Si contact 15 is formed on the surface of the external base region 6.
JP4164280A 1980-03-31 1980-03-31 Manufacture of semiconductor device Pending JPS56138958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4164280A JPS56138958A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4164280A JPS56138958A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56138958A true JPS56138958A (en) 1981-10-29

Family

ID=12613980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4164280A Pending JPS56138958A (en) 1980-03-31 1980-03-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56138958A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6393151A (en) * 1986-10-07 1988-04-23 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975659A (en) * 1982-10-22 1984-04-28 Fujitsu Ltd Manufacture of semiconductor device
JPH035058B2 (en) * 1982-10-22 1991-01-24 Fujitsu Ltd
JPS6393151A (en) * 1986-10-07 1988-04-23 Toshiba Corp Semiconductor device

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