[go: up one dir, main page]

JPS55101947A - Photomask for photoetching and manufacture thereof - Google Patents

Photomask for photoetching and manufacture thereof

Info

Publication number
JPS55101947A
JPS55101947A JP1015379A JP1015379A JPS55101947A JP S55101947 A JPS55101947 A JP S55101947A JP 1015379 A JP1015379 A JP 1015379A JP 1015379 A JP1015379 A JP 1015379A JP S55101947 A JPS55101947 A JP S55101947A
Authority
JP
Japan
Prior art keywords
photomask
substrate
pinhole
radiation
ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1015379A
Other languages
Japanese (ja)
Inventor
Toshio Oguchi
Fuminori Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1015379A priority Critical patent/JPS55101947A/en
Publication of JPS55101947A publication Critical patent/JPS55101947A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To manufacture a high-accuracy photomask in a high yield by selectively applying radiation to a transparent substrate until the substrate screens ultraviolet and visible rays to correct or remove pinholes, etc. in a metal mask such as a photomask for an integrated circuit. CONSTITUTION:On glass substrate 1 transparent to ultraviolet and visible rays wiring or an element pattern is formed as thin layer 2 of a metal such as Cr or Ni or a metal oxide such as chromium oxide. When pinhole 3, dot 4, unsatisfactory form portion 5, etc. are present in the pattern, in order to correct pinhole 3 an area slightly larger than pinhole 3 is irradiated with radiation 7 such as gamma-Co rays while regulating the area with aperture 6 to change part 8 of transparent substrate 1 in quality so that it screens ultraviolet and visible rays. Aperture 6 is of radiation screening substance such as Au. A pattern face may directly be formed on substrate 1 by applying radiation 7 besides the correction. Thus, a high-accuracy photomask is easily manufactured in a high yield.
JP1015379A 1979-01-31 1979-01-31 Photomask for photoetching and manufacture thereof Pending JPS55101947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1015379A JPS55101947A (en) 1979-01-31 1979-01-31 Photomask for photoetching and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1015379A JPS55101947A (en) 1979-01-31 1979-01-31 Photomask for photoetching and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS55101947A true JPS55101947A (en) 1980-08-04

Family

ID=11742321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1015379A Pending JPS55101947A (en) 1979-01-31 1979-01-31 Photomask for photoetching and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS55101947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547111A1 (en) * 1983-05-31 1984-12-07 American Telephone & Telegraph METHOD FOR CORRECTING LITHOGRAPHIC MASKS
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks

Similar Documents

Publication Publication Date Title
GB1573699A (en) Process for forming transparent electrode pattern on electro-optical display device
US4454209A (en) High resolution soft x-ray or ion beam lithographic mask
JPS5630129A (en) Manufacture of photomask
JPS55101947A (en) Photomask for photoetching and manufacture thereof
FR1596843A (en)
JPS55129347A (en) Photomask
JPS576849A (en) Photomask and its preparation
JPS5299072A (en) Mask for x-ray exposure
JPS59155839A (en) Mask for transferring pattern
US4557986A (en) High resolution lithographic process
JPS57138638A (en) Photoetching mask
KR910001875A (en) Manufacturing Method of Exposure Mask
JPS561534A (en) Manufacture of photomask
JPS5587148A (en) Correction method for light shielding mask
JPS5437579A (en) Chrome plate
JPS5689741A (en) Dryplate for photomasking
JPS57147634A (en) Photomask blank
JPS57115544A (en) Photomask
JPS5675650A (en) Photomask material for far ultraviolet exposure
JPS57112754A (en) Pinhole correcting method
JPS5635137A (en) Photomask
DE3541559A1 (en) Hard mask for photolithographic processes
JPS57101837A (en) Photomask
JPH0370308A (en) Mask pattern for elastic surface wave device
JPS5646228A (en) Manufacture of mask for x rays exposure