JPS5675650A - Photomask material for far ultraviolet exposure - Google Patents
Photomask material for far ultraviolet exposureInfo
- Publication number
- JPS5675650A JPS5675650A JP15210779A JP15210779A JPS5675650A JP S5675650 A JPS5675650 A JP S5675650A JP 15210779 A JP15210779 A JP 15210779A JP 15210779 A JP15210779 A JP 15210779A JP S5675650 A JPS5675650 A JP S5675650A
- Authority
- JP
- Japan
- Prior art keywords
- far ultraviolet
- layer
- photomask
- film thickness
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000010453 quartz Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003595 spectral effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To obtain a photomask material low in reflectance of far ultraviolet rays and high in resolution, for use in fabrication of high density integrated circuits or the like, by forming a metallic Cr layer and a Cr oxide layer each in a specified film thickness range on a transparent synthetic quartz substrate. CONSTITUTION:A metallic Cr layer is formed on a synthetic quartz substrate having 180-260nm spectral transmittance >=90% in 50-70nm film thickness, and a Cr oxide layer of 5-8nm film thickness is formed on the Cr layer so as to reduce its spectral reflectance of the far ultraviolet rays in the region of 180-260nm wavelength to a minimal value <=5%, thus permitting a material for fabricating a photomask capable of forming a minute pattern of about 1mum size by far ultraviolet exposure to be obtained. Reduction of reflectance permits the light reflected by the Cr oxide layer to be prevented from exposing the photoresist again, and from disabling transfer of minute patterns, and therefore, a high resolution photomask to be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15210779A JPS5675650A (en) | 1979-11-26 | 1979-11-26 | Photomask material for far ultraviolet exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15210779A JPS5675650A (en) | 1979-11-26 | 1979-11-26 | Photomask material for far ultraviolet exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5675650A true JPS5675650A (en) | 1981-06-22 |
Family
ID=15533198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15210779A Pending JPS5675650A (en) | 1979-11-26 | 1979-11-26 | Photomask material for far ultraviolet exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5675650A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7949220B2 (en) * | 2006-07-20 | 2011-05-24 | Hitachi Chemical Company, Ltd. | Hybrid optical/electrical mixed circuit board |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121441A (en) * | 1979-03-14 | 1980-09-18 | Fujitsu Ltd | Mask for far ultraviolet exposure |
-
1979
- 1979-11-26 JP JP15210779A patent/JPS5675650A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55121441A (en) * | 1979-03-14 | 1980-09-18 | Fujitsu Ltd | Mask for far ultraviolet exposure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7949220B2 (en) * | 2006-07-20 | 2011-05-24 | Hitachi Chemical Company, Ltd. | Hybrid optical/electrical mixed circuit board |
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