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JPS5457861A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5457861A
JPS5457861A JP12347877A JP12347877A JPS5457861A JP S5457861 A JPS5457861 A JP S5457861A JP 12347877 A JP12347877 A JP 12347877A JP 12347877 A JP12347877 A JP 12347877A JP S5457861 A JPS5457861 A JP S5457861A
Authority
JP
Japan
Prior art keywords
annealing
layer
impurity
implanted
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12347877A
Other languages
Japanese (ja)
Other versions
JPS6122455B2 (en
Inventor
Masanobu Miyao
Takashi Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12347877A priority Critical patent/JPS5457861A/en
Publication of JPS5457861A publication Critical patent/JPS5457861A/en
Publication of JPS6122455B2 publication Critical patent/JPS6122455B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form a high-density shallow junction layer excellent in electric characteristic thourgh annealing at a low temperature between 400 and 800°C, by double-implanting two kinds of impurity elements in the surface of a silicon substrate.
CONSTITUTION: To attain the reduction of channeling components and the improvement of electrical characteristics after annealing, an element, whose atomic number is greater than sixteen, among impurity elements of a desired conduction type is implanted in silicon substrate 1 as much as or more than the substrate surface becomes non-crystal, thereby forming non-crystal layer 2. For the purpose of controlling a resistance value after the annealing, more III-group or V-group impurity element of a desired conduction type than the amount of the 1st implantation is implanted by enough energy to make it stay inside non-crystal layer 2, thereby forming impurity layer 3. In order to activate the implantation layer electrically, this is heat-treated at a temperature between 400 and 800°C
COPYRIGHT: (C)1979,JPO&Japio
JP12347877A 1977-10-17 1977-10-17 Manufacture of semiconductor device Granted JPS5457861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12347877A JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12347877A JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5457861A true JPS5457861A (en) 1979-05-10
JPS6122455B2 JPS6122455B2 (en) 1986-05-31

Family

ID=14861616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12347877A Granted JPS5457861A (en) 1977-10-17 1977-10-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457861A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (en) * 1982-05-31 1983-12-06 Toshiba Corp Manufacture of semiconductor device
JPS5984422A (en) * 1982-11-04 1984-05-16 Pioneer Electronic Corp Manufacture of semiconductor device
JPS59204229A (en) * 1983-05-04 1984-11-19 Sony Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPS60137072A (en) * 1983-12-26 1985-07-20 Matsushita Electronics Corp Manufacturing method of junction field effect transistor
JPS6362227A (en) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Correction of characteristics of p-type dopant by other p-type dopant
JPH03139827A (en) * 1989-10-25 1991-06-14 Katsuhiro Yokota Forming method for low resistance layer on silicon by ion implanting of two or more elements having different atomic radii
WO2003075352A1 (en) * 2002-03-01 2003-09-12 Renesas Technology Corp. Semiconductor device and production method therefor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209120A (en) * 1982-05-31 1983-12-06 Toshiba Corp Manufacture of semiconductor device
JPS5984422A (en) * 1982-11-04 1984-05-16 Pioneer Electronic Corp Manufacture of semiconductor device
JPS59204229A (en) * 1983-05-04 1984-11-19 Sony Corp Manufacture of semiconductor device
JPS6095921A (en) * 1983-10-31 1985-05-29 Toshiba Corp Manufacture of semiconductor device
JPS60137072A (en) * 1983-12-26 1985-07-20 Matsushita Electronics Corp Manufacturing method of junction field effect transistor
JPS6362227A (en) * 1986-08-28 1988-03-18 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン Correction of characteristics of p-type dopant by other p-type dopant
JPH03139827A (en) * 1989-10-25 1991-06-14 Katsuhiro Yokota Forming method for low resistance layer on silicon by ion implanting of two or more elements having different atomic radii
WO2003075352A1 (en) * 2002-03-01 2003-09-12 Renesas Technology Corp. Semiconductor device and production method therefor
US7141840B2 (en) 2002-03-01 2006-11-28 Renesas Technology Corp. Semiconductor device and production method therefor
CN100361314C (en) * 2002-03-01 2008-01-09 株式会社瑞萨科技 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6122455B2 (en) 1986-05-31

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