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JPS5645047A - Manufacture of semiconductor monocrystal film - Google Patents

Manufacture of semiconductor monocrystal film

Info

Publication number
JPS5645047A
JPS5645047A JP12004679A JP12004679A JPS5645047A JP S5645047 A JPS5645047 A JP S5645047A JP 12004679 A JP12004679 A JP 12004679A JP 12004679 A JP12004679 A JP 12004679A JP S5645047 A JPS5645047 A JP S5645047A
Authority
JP
Japan
Prior art keywords
heat treatment
interface
film
reduced
fault
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12004679A
Other languages
Japanese (ja)
Inventor
Toshio Yoshii
Tomoyasu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12004679A priority Critical patent/JPS5645047A/en
Publication of JPS5645047A publication Critical patent/JPS5645047A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]

Landscapes

  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain an extremely good crystal by forming a semiconductor film on an insulating monocrystal substrate wherein ion implantation is applied around the interface and the density of a grid fault is reduced by heat treatment and the fault is also reduced by heat treatment after the ion implantation around the surface. CONSTITUTION:An Si film 2 is formed on a sapphire substrate 1 having a (-1012) surface by a CVD method and a noncrystalloid layer 3 is formed at the interface by implanting Si ion into the Si film 2. Crystallization around the interface is improved after recrystallizing the Si 3 from the surface side of the Si by heat treatment. Next, a noncrystalloid layer 5 is formed by implanting ion into the surface section of the Si 3 and Si 6 is recrystallized from the sapphire substrate 1 side by heat treatment. In this way, fault density will remarkably be reduced and monocrystals will be formed on the insulating monocrystal substrate.
JP12004679A 1979-09-20 1979-09-20 Manufacture of semiconductor monocrystal film Pending JPS5645047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12004679A JPS5645047A (en) 1979-09-20 1979-09-20 Manufacture of semiconductor monocrystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12004679A JPS5645047A (en) 1979-09-20 1979-09-20 Manufacture of semiconductor monocrystal film

Publications (1)

Publication Number Publication Date
JPS5645047A true JPS5645047A (en) 1981-04-24

Family

ID=14776548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12004679A Pending JPS5645047A (en) 1979-09-20 1979-09-20 Manufacture of semiconductor monocrystal film

Country Status (1)

Country Link
JP (1) JPS5645047A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091623A (en) * 1983-10-26 1985-05-23 Toshiba Corp Manufacture of semiconductor single crystal thin film
JPS62176145A (en) * 1986-01-29 1987-08-01 Sharp Corp Manufacture of semiconductor substrate
JPS6332207U (en) * 1986-08-20 1988-03-02
US4737233A (en) * 1984-10-22 1988-04-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making semiconductor crystal films
JPS63137412A (en) * 1986-11-29 1988-06-09 Sharp Corp Manufacture of semiconductor substrate
US5238875A (en) * 1990-09-06 1993-08-24 Shin-Etsu Handotai Co., Ltd. Method of producing a bonded wafer
JP2009514204A (en) * 2005-10-28 2009-04-02 コミサリヤ・ア・レネルジ・アトミク Thin film structure manufacturing method and thin film structure obtained
JP2014216555A (en) * 2013-04-26 2014-11-17 株式会社豊田自動織機 Method for manufacturing semiconductor substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6091623A (en) * 1983-10-26 1985-05-23 Toshiba Corp Manufacture of semiconductor single crystal thin film
US4737233A (en) * 1984-10-22 1988-04-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method for making semiconductor crystal films
JPS62176145A (en) * 1986-01-29 1987-08-01 Sharp Corp Manufacture of semiconductor substrate
JPS6332207U (en) * 1986-08-20 1988-03-02
JPS63137412A (en) * 1986-11-29 1988-06-09 Sharp Corp Manufacture of semiconductor substrate
US5238875A (en) * 1990-09-06 1993-08-24 Shin-Etsu Handotai Co., Ltd. Method of producing a bonded wafer
JP2009514204A (en) * 2005-10-28 2009-04-02 コミサリヤ・ア・レネルジ・アトミク Thin film structure manufacturing method and thin film structure obtained
US8461031B2 (en) 2005-10-28 2013-06-11 Commissariat A L'energie Atomique Method for making a thin-film structure and resulting thin-film structure
JP2014216555A (en) * 2013-04-26 2014-11-17 株式会社豊田自動織機 Method for manufacturing semiconductor substrate

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