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JPS5452483A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5452483A
JPS5452483A JP11885077A JP11885077A JPS5452483A JP S5452483 A JPS5452483 A JP S5452483A JP 11885077 A JP11885077 A JP 11885077A JP 11885077 A JP11885077 A JP 11885077A JP S5452483 A JPS5452483 A JP S5452483A
Authority
JP
Japan
Prior art keywords
integrated circuit
resistor
layer
depth
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11885077A
Other languages
Japanese (ja)
Other versions
JPS6131633B2 (en
Inventor
Tatsuji Asakawa
Mitsumasa Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11885077A priority Critical patent/JPS5452483A/en
Publication of JPS5452483A publication Critical patent/JPS5452483A/en
Publication of JPS6131633B2 publication Critical patent/JPS6131633B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To make it possible to form a resistor on an integrated circuit without increasing the number of processes for the formation.
CONSTITUTION: As for a MISFET integrated circuit, parts which can be used as a resistor are separation layers 14 in addition to P--type well 2. Shallow P-type layer 14 is formed by implanting B ions and at the same time, resistor layer 15 is also formed. Layer 15 is connected to metal electrode 13 via P+-type layer 16. In this way, the amount of implanted ions is controlled within the range until the achievement of separation so as to increase specific resistance and since the depth can be made below 1μ, the sheet resistance can be increased. In addition, since depth (xj) is not deep, width (wj) hard to be reduced becomes nearly equal to (w) because of ion-implantation, the control can be nearly attanined as the mask is, and the integration density improves through fining, so that the resistance value will be uniformed
COPYRIGHT: (C)1979,JPO&Japio
JP11885077A 1977-10-03 1977-10-03 Semiconductor integrated circuit Granted JPS5452483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11885077A JPS5452483A (en) 1977-10-03 1977-10-03 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11885077A JPS5452483A (en) 1977-10-03 1977-10-03 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5452483A true JPS5452483A (en) 1979-04-25
JPS6131633B2 JPS6131633B2 (en) 1986-07-21

Family

ID=14746675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11885077A Granted JPS5452483A (en) 1977-10-03 1977-10-03 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5452483A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254652A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor memory device
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device
JP2007324381A (en) * 2006-06-01 2007-12-13 Sanyo Electric Co Ltd Semiconductor device
JP2015133398A (en) * 2014-01-14 2015-07-23 富士通セミコンダクター株式会社 Semiconductor integrated circuit device, and method of manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254652A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Semiconductor memory device
JPH027474A (en) * 1988-06-24 1990-01-11 Sony Corp Semiconductor device
JP2007324381A (en) * 2006-06-01 2007-12-13 Sanyo Electric Co Ltd Semiconductor device
JP2015133398A (en) * 2014-01-14 2015-07-23 富士通セミコンダクター株式会社 Semiconductor integrated circuit device, and method of manufacturing the same
US9935097B2 (en) 2014-01-14 2018-04-03 Mie Fujitsu Semiconductor Limited Semiconductor integrated circuit apparatus and manufacturing method for same
US10236286B2 (en) 2014-01-14 2019-03-19 Mie Fujitsu Semiconductor Limited Semiconductor integrated circuit apparatus and manufacturing method for same

Also Published As

Publication number Publication date
JPS6131633B2 (en) 1986-07-21

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