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JPS5455376A - Back metallizing method of silicon wafers - Google Patents

Back metallizing method of silicon wafers

Info

Publication number
JPS5455376A
JPS5455376A JP12279177A JP12279177A JPS5455376A JP S5455376 A JPS5455376 A JP S5455376A JP 12279177 A JP12279177 A JP 12279177A JP 12279177 A JP12279177 A JP 12279177A JP S5455376 A JPS5455376 A JP S5455376A
Authority
JP
Japan
Prior art keywords
gold
temperature
silicon wafers
deposited
element characteristics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12279177A
Other languages
Japanese (ja)
Inventor
Hiromi Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12279177A priority Critical patent/JPS5455376A/en
Publication of JPS5455376A publication Critical patent/JPS5455376A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To prevent the degradation in element characteristics by laminating gold- Si alloy-gold on the back of Si substrates and making mounting temperature lower than before.
CONSTITUTION: The back of a substrate is polished and the polished surface is etched away several μm, after which gold is deposited and an alloy layer is made by rising temperature to gold-Si eutectic temperature. Gold is furter deposited thereon. Then, the oxidation of the gold-Si layer is prevented, pellet mounting at low temperature becomes feasible, adhesion strength becomes even and the degration in element characteristics is less
COPYRIGHT: (C)1979,JPO&Japio
JP12279177A 1977-10-12 1977-10-12 Back metallizing method of silicon wafers Pending JPS5455376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12279177A JPS5455376A (en) 1977-10-12 1977-10-12 Back metallizing method of silicon wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12279177A JPS5455376A (en) 1977-10-12 1977-10-12 Back metallizing method of silicon wafers

Publications (1)

Publication Number Publication Date
JPS5455376A true JPS5455376A (en) 1979-05-02

Family

ID=14844702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12279177A Pending JPS5455376A (en) 1977-10-12 1977-10-12 Back metallizing method of silicon wafers

Country Status (1)

Country Link
JP (1) JPS5455376A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273645A (en) * 1988-09-08 1990-03-13 Nec Corp Manufacture of silicon element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273645A (en) * 1988-09-08 1990-03-13 Nec Corp Manufacture of silicon element

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