JPS5455376A - Back metallizing method of silicon wafers - Google Patents
Back metallizing method of silicon wafersInfo
- Publication number
- JPS5455376A JPS5455376A JP12279177A JP12279177A JPS5455376A JP S5455376 A JPS5455376 A JP S5455376A JP 12279177 A JP12279177 A JP 12279177A JP 12279177 A JP12279177 A JP 12279177A JP S5455376 A JPS5455376 A JP S5455376A
- Authority
- JP
- Japan
- Prior art keywords
- gold
- temperature
- silicon wafers
- deposited
- element characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE: To prevent the degradation in element characteristics by laminating gold- Si alloy-gold on the back of Si substrates and making mounting temperature lower than before.
CONSTITUTION: The back of a substrate is polished and the polished surface is etched away several μm, after which gold is deposited and an alloy layer is made by rising temperature to gold-Si eutectic temperature. Gold is furter deposited thereon. Then, the oxidation of the gold-Si layer is prevented, pellet mounting at low temperature becomes feasible, adhesion strength becomes even and the degration in element characteristics is less
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12279177A JPS5455376A (en) | 1977-10-12 | 1977-10-12 | Back metallizing method of silicon wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12279177A JPS5455376A (en) | 1977-10-12 | 1977-10-12 | Back metallizing method of silicon wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5455376A true JPS5455376A (en) | 1979-05-02 |
Family
ID=14844702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12279177A Pending JPS5455376A (en) | 1977-10-12 | 1977-10-12 | Back metallizing method of silicon wafers |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5455376A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0273645A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Manufacture of silicon element |
-
1977
- 1977-10-12 JP JP12279177A patent/JPS5455376A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0273645A (en) * | 1988-09-08 | 1990-03-13 | Nec Corp | Manufacture of silicon element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55132048A (en) | Semiconductor device | |
JPS5455376A (en) | Back metallizing method of silicon wafers | |
JPS54159173A (en) | Construction of bump electrode | |
JPS55108757A (en) | Semiconductor device | |
JPS54121057A (en) | Semiconductor device | |
JPS5419658A (en) | Semiconductor device | |
JPS5710951A (en) | Semiconductor device | |
JPS5515246A (en) | Bonding method for semiconductor substrate | |
JPS5422183A (en) | Semiconductor displacement converter | |
JPS5484477A (en) | Semiconductor device | |
JPS56129645A (en) | Forming method for metallic thin film | |
JPS54160166A (en) | Electrode forming method for semiconductor device | |
JPS5245270A (en) | Semiconductor device | |
JPS5460859A (en) | Bonding method | |
JPS556839A (en) | Semiconductor device | |
JPS56161663A (en) | Thin film integrated circuit | |
JPS5314564A (en) | Bonding method of s# chip and substrate | |
JPS54152967A (en) | Manufacture of semiconductor device | |
JPS5271980A (en) | Formation of metal wiring | |
JPS5295175A (en) | Pellet bonding | |
JPS572548A (en) | Ic electrode structure | |
JPS54127690A (en) | Semiconductor pressure converter and its manufacture | |
JPS55103742A (en) | Fabrication of electrode of semiconductor element | |
JPS57138160A (en) | Formation of electrode | |
JPS555173A (en) | Brazing method by nickel-phosphorus alloy |