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JPS5460859A - Bonding method - Google Patents

Bonding method

Info

Publication number
JPS5460859A
JPS5460859A JP12775677A JP12775677A JPS5460859A JP S5460859 A JPS5460859 A JP S5460859A JP 12775677 A JP12775677 A JP 12775677A JP 12775677 A JP12775677 A JP 12775677A JP S5460859 A JPS5460859 A JP S5460859A
Authority
JP
Japan
Prior art keywords
frame
layer
bonding
wire
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12775677A
Other languages
Japanese (ja)
Inventor
Toshihiro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12775677A priority Critical patent/JPS5460859A/en
Publication of JPS5460859A publication Critical patent/JPS5460859A/en
Pending legal-status Critical Current

Links

Classifications

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    • H01L2924/20106—Temperature range 200 C=<T<250 C, 473.15 K =<T < 523.15K

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To avoid the disconnection, rust occurrence and other defects as well as to reduce the cost by providing the Sn plating layer of under 1μm to the metal substance to be bonded such as the lead frame or the like and eutectic-bonding the Au wire to the plating layer.
CONSTITUTION: IC lead frame 11 is formed from thin Fe plate through the etching, blanking and other methods, and Sn layer 12 of under 1μm film thickness is coated on frame 11 through the chemical plating or the electrolytic plating. Then mounting material 14 composed of the solder or the epoxy is put on the pellet mounting part on frame 11 to adhere semiconductor pellet 13, and Au wire 15 is bonded in the inactive gas like N2 gas. In this case, the temperature is set to about 180°C and about 250°C for frame 11 and the bonding capilary respectively. Then the bonding is performed through the nail-head bonding method using the ultrasonic wave together. After this, the other end of wire 15 is attached to layer 12 on other frame 11 with generation of Au-Sn eutectic layer 16
COPYRIGHT: (C)1979,JPO&Japio
JP12775677A 1977-10-25 1977-10-25 Bonding method Pending JPS5460859A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12775677A JPS5460859A (en) 1977-10-25 1977-10-25 Bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12775677A JPS5460859A (en) 1977-10-25 1977-10-25 Bonding method

Publications (1)

Publication Number Publication Date
JPS5460859A true JPS5460859A (en) 1979-05-16

Family

ID=14967902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12775677A Pending JPS5460859A (en) 1977-10-25 1977-10-25 Bonding method

Country Status (1)

Country Link
JP (1) JPS5460859A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006025210A1 (en) * 2004-08-31 2008-05-08 松下電器産業株式会社 Micromachine device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2006025210A1 (en) * 2004-08-31 2008-05-08 松下電器産業株式会社 Micromachine device

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