JPS54145540A - Electrophotographic image forming material - Google Patents
Electrophotographic image forming materialInfo
- Publication number
- JPS54145540A JPS54145540A JP5360678A JP5360678A JPS54145540A JP S54145540 A JPS54145540 A JP S54145540A JP 5360678 A JP5360678 A JP 5360678A JP 5360678 A JP5360678 A JP 5360678A JP S54145540 A JPS54145540 A JP S54145540A
- Authority
- JP
- Japan
- Prior art keywords
- image forming
- forming material
- layer
- electrophotographic image
- glow discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
PURPOSE: To form the title image forming material superior in resistance to humidity and to light fatigue, and resistant to repeated uses, by using for photoconductive layer an amorphous Si or Ge (a-Si or a-Ge) semiconductor containing a specified chemically modifying substance.
CONSTITUTION: On substrate 2, such as stainless steel, aluminum, or other metals, a resin sheet subjected to surface conductivity imparting treatment, or glass, photoconductive layer 3 is formed by glow discharge, sputtering, or the like, for use in electrophotographic image forming material 1. Layer 3 is made of an a-Si (or a- Ge) semiconductor containing about 0.1 to 30 (preferably 0.2 to 15) mole % oxygen or nitrogen as a chemical modifyer. In order to add the above modidyer into the a-Si semiconductor layer, a hydrocarbon with about 1 to 4 C, such as methane, ethane, or ethylene is introduced together with a raw material gas for forming a- Si for example during glow discharge for forming a semiconductor layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5360678A JPS54145540A (en) | 1978-05-04 | 1978-05-04 | Electrophotographic image forming material |
US06/036,226 US4471042A (en) | 1978-05-04 | 1979-05-04 | Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium |
US06/418,293 US4565731A (en) | 1978-05-04 | 1982-09-15 | Image-forming member for electrophotography |
US06/790,155 US4664998A (en) | 1978-05-04 | 1985-10-22 | Electrophotographic image forming member having hydrogenated amorphous photoconductive layer including carbon |
US06/932,160 US4745041A (en) | 1978-05-04 | 1986-11-18 | CVD process for forming semiconducting film having hydrogenated germanium matrix |
US07/198,582 US4830946A (en) | 1978-05-04 | 1988-05-16 | CVD process for forming an image forming member for electrophotography |
US08/471,156 US5573884A (en) | 1978-05-04 | 1995-06-06 | Image-forming member for electrophotography |
US08/479,856 US5753936A (en) | 1978-05-04 | 1995-06-07 | Image forming member for electrophotography |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5360678A JPS54145540A (en) | 1978-05-04 | 1978-05-04 | Electrophotographic image forming material |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16265382A Division JPS58111951A (en) | 1982-09-18 | 1982-09-18 | Image forming member for electrophotography |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54145540A true JPS54145540A (en) | 1979-11-13 |
JPS6226459B2 JPS6226459B2 (en) | 1987-06-09 |
Family
ID=12947539
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5360678A Granted JPS54145540A (en) | 1978-05-04 | 1978-05-04 | Electrophotographic image forming material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54145540A (en) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS5664346A (en) * | 1979-10-30 | 1981-06-01 | Fuji Photo Film Co Ltd | Electrophotographic receptor and its preparation |
JPS5752178A (en) * | 1980-09-13 | 1982-03-27 | Canon Inc | Photoconductive member |
WO1982001261A1 (en) * | 1980-09-25 | 1982-04-15 | Kk Canon | Photoconductive member |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS57153160A (en) * | 1981-03-16 | 1982-09-21 | Sanyo Electric Co Ltd | Solar beam energy transducer |
JPS583969A (en) * | 1981-06-29 | 1983-01-10 | Sharp Corp | Electrophotographic receptor and its production |
JPS5860747A (en) * | 1981-10-07 | 1983-04-11 | Oki Electric Ind Co Ltd | Electrophotographic receptor |
JPS5875873A (en) * | 1981-10-30 | 1983-05-07 | Kanegafuchi Chem Ind Co Ltd | electronic equipment |
JPS5895876A (en) * | 1981-12-01 | 1983-06-07 | Canon Inc | photoconductive member |
JPS58100137A (en) * | 1981-12-11 | 1983-06-14 | Toshiba Corp | Electrophotographic receptor and its manufacture |
JPS58106547A (en) * | 1981-12-21 | 1983-06-24 | Seiko Epson Corp | Electrophotographic photoreceptor manufacturing method |
JPS58106546A (en) * | 1981-12-21 | 1983-06-24 | Seiko Epson Corp | Manufacture of electrophotographic photo-receptor |
JPS58107546A (en) * | 1981-12-22 | 1983-06-27 | Seiko Epson Corp | Electrophotographic photoreceptor manufacturing method |
JPS608847A (en) * | 1983-06-29 | 1985-01-17 | Toshiba Corp | Electrophotographic sensitive body |
JPS6063960A (en) * | 1983-09-17 | 1985-04-12 | Canon Inc | Photoconductive member |
JPS60104954A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic imaging members |
JPS60104955A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic image forming member |
JPS60125846A (en) * | 1983-12-09 | 1985-07-05 | Hitachi Koki Co Ltd | electrophotographic imaging member |
JPS60128456A (en) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | Photosensitive body for electrophotography |
EP0501498A1 (en) | 1991-02-28 | 1992-09-02 | Canon Kabushiki Kaisha | Method for treating substrate for electrophotographic photosensitive member and method for manufacturing electrophotographic photosensitive member making use of said method for treating substrate |
EP0531625A1 (en) | 1991-05-30 | 1993-03-17 | Canon Kabushiki Kaisha | Light-receiving member |
JPH0588390A (en) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device for photosensitive body |
JPH0722638A (en) * | 1993-11-18 | 1995-01-24 | Plasma Physics Corp | Semiconductor device |
US5407768A (en) * | 1992-04-24 | 1995-04-18 | Canon Kabushiki Kaisha | Light-receiving member |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5455439A (en) * | 1977-10-13 | 1979-05-02 | Asahi Chemical Ind | Xerographic photosensitive plate |
-
1978
- 1978-05-04 JP JP5360678A patent/JPS54145540A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5455439A (en) * | 1977-10-13 | 1979-05-02 | Asahi Chemical Ind | Xerographic photosensitive plate |
Cited By (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5662255A (en) * | 1979-10-26 | 1981-05-28 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
JPS639217B2 (en) * | 1979-10-26 | 1988-02-26 | Fuji Photo Film Co Ltd | |
JPS5664346A (en) * | 1979-10-30 | 1981-06-01 | Fuji Photo Film Co Ltd | Electrophotographic receptor and its preparation |
JPS639218B2 (en) * | 1979-10-30 | 1988-02-26 | Fuji Photo Film Co Ltd | |
JPS5752178A (en) * | 1980-09-13 | 1982-03-27 | Canon Inc | Photoconductive member |
JPH0150905B2 (en) * | 1980-09-13 | 1989-11-01 | Canon Kk | |
WO1982001261A1 (en) * | 1980-09-25 | 1982-04-15 | Kk Canon | Photoconductive member |
JPS57119356A (en) * | 1981-01-16 | 1982-07-24 | Canon Inc | Photoconductive member |
JPS628783B2 (en) * | 1981-01-16 | 1987-02-24 | Canon Kk | |
JPS57153160A (en) * | 1981-03-16 | 1982-09-21 | Sanyo Electric Co Ltd | Solar beam energy transducer |
JPS583969A (en) * | 1981-06-29 | 1983-01-10 | Sharp Corp | Electrophotographic receptor and its production |
JPS6123271B2 (en) * | 1981-06-29 | 1986-06-05 | Sharp Kk | |
JPS5860747A (en) * | 1981-10-07 | 1983-04-11 | Oki Electric Ind Co Ltd | Electrophotographic receptor |
JPS5875873A (en) * | 1981-10-30 | 1983-05-07 | Kanegafuchi Chem Ind Co Ltd | electronic equipment |
JPH0325952B2 (en) * | 1981-12-01 | 1991-04-09 | Canon Kk | |
JPS5895876A (en) * | 1981-12-01 | 1983-06-07 | Canon Inc | photoconductive member |
JPH0338585B2 (en) * | 1981-12-11 | 1991-06-11 | Tokyo Shibaura Electric Co | |
JPS58100137A (en) * | 1981-12-11 | 1983-06-14 | Toshiba Corp | Electrophotographic receptor and its manufacture |
JPS58106546A (en) * | 1981-12-21 | 1983-06-24 | Seiko Epson Corp | Manufacture of electrophotographic photo-receptor |
JPS58106547A (en) * | 1981-12-21 | 1983-06-24 | Seiko Epson Corp | Electrophotographic photoreceptor manufacturing method |
JPS58107546A (en) * | 1981-12-22 | 1983-06-27 | Seiko Epson Corp | Electrophotographic photoreceptor manufacturing method |
JPH0588390A (en) * | 1982-11-01 | 1993-04-09 | Kanegafuchi Chem Ind Co Ltd | Semiconductor device for photosensitive body |
JPH0548912B2 (en) * | 1983-06-29 | 1993-07-22 | Tokyo Shibaura Electric Co | |
JPS608847A (en) * | 1983-06-29 | 1985-01-17 | Toshiba Corp | Electrophotographic sensitive body |
JPS6063960A (en) * | 1983-09-17 | 1985-04-12 | Canon Inc | Photoconductive member |
JPS60104955A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic image forming member |
JPS60104954A (en) * | 1983-11-11 | 1985-06-10 | Hitachi Koki Co Ltd | Electrophotographic imaging members |
JPS60125846A (en) * | 1983-12-09 | 1985-07-05 | Hitachi Koki Co Ltd | electrophotographic imaging member |
JPS60128456A (en) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | Photosensitive body for electrophotography |
EP0501498A1 (en) | 1991-02-28 | 1992-09-02 | Canon Kabushiki Kaisha | Method for treating substrate for electrophotographic photosensitive member and method for manufacturing electrophotographic photosensitive member making use of said method for treating substrate |
US5314780A (en) * | 1991-02-28 | 1994-05-24 | Canon Kabushiki Kaisha | Method for treating metal substrate for electro-photographic photosensitive member and method for manufacturing electrophotographic photosensitive member |
US5480627A (en) * | 1991-02-28 | 1996-01-02 | Canon Kabushiki Kaisha | Method for treating substrate for electrophotographic photosensitive member and method for making electrophotographic photosensitive member |
EP0531625A1 (en) | 1991-05-30 | 1993-03-17 | Canon Kabushiki Kaisha | Light-receiving member |
US5582944A (en) * | 1991-05-30 | 1996-12-10 | Canon Kabushiki Kaisha | Light receiving member |
US5407768A (en) * | 1992-04-24 | 1995-04-18 | Canon Kabushiki Kaisha | Light-receiving member |
JPH0722638A (en) * | 1993-11-18 | 1995-01-24 | Plasma Physics Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6226459B2 (en) | 1987-06-09 |
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