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JPS5562780A - Preparation of amorphous photoconductive portion material - Google Patents

Preparation of amorphous photoconductive portion material

Info

Publication number
JPS5562780A
JPS5562780A JP13545778A JP13545778A JPS5562780A JP S5562780 A JPS5562780 A JP S5562780A JP 13545778 A JP13545778 A JP 13545778A JP 13545778 A JP13545778 A JP 13545778A JP S5562780 A JPS5562780 A JP S5562780A
Authority
JP
Japan
Prior art keywords
layer
support body
heat treatment
temperature
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13545778A
Other languages
Japanese (ja)
Inventor
Tadaharu Fukuda
Katsumi Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP13545778A priority Critical patent/JPS5562780A/en
Publication of JPS5562780A publication Critical patent/JPS5562780A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve characteristics as a photoconductive layer for electrophotography, by forming an amorphous Ge(a-Ge)-layer, and by thermally treating the layer in a specified atmosphere.
CONSTITUTION: The temperature Ts of a support body in Al, etc. is kept at 50°C (the upper limit is 100°C and the lower limit 20∼25°C), and temperature Ta in case of heat treatment after making up an a-Ge-layer is selected in a range of 100∼ 450°C, particularly 200∼350°C. The time of heat treatment differs according to layer thickness, area and the kinds of the support body, but is choosed in 15∼ 180min. CO2, NO2, NH3, etc. are used in one kind or a mixed shape as annealing atmosphere forming substance containing O or N. A-Ge thermally treated under such conditions is stable in electric, optical characteristics and has high sensitivity, is remarkably excellent in light resisting fatigue properties and heat resisting properties and does not deteriorate in case of repeated use.
COPYRIGHT: (C)1980,JPO&Japio
JP13545778A 1978-11-01 1978-11-01 Preparation of amorphous photoconductive portion material Pending JPS5562780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13545778A JPS5562780A (en) 1978-11-01 1978-11-01 Preparation of amorphous photoconductive portion material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13545778A JPS5562780A (en) 1978-11-01 1978-11-01 Preparation of amorphous photoconductive portion material

Publications (1)

Publication Number Publication Date
JPS5562780A true JPS5562780A (en) 1980-05-12

Family

ID=15152150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13545778A Pending JPS5562780A (en) 1978-11-01 1978-11-01 Preparation of amorphous photoconductive portion material

Country Status (1)

Country Link
JP (1) JPS5562780A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982001261A1 (en) * 1980-09-25 1982-04-15 Kk Canon Photoconductive member

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