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JPS5752178A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5752178A
JPS5752178A JP55127490A JP12749080A JPS5752178A JP S5752178 A JPS5752178 A JP S5752178A JP 55127490 A JP55127490 A JP 55127490A JP 12749080 A JP12749080 A JP 12749080A JP S5752178 A JPS5752178 A JP S5752178A
Authority
JP
Japan
Prior art keywords
layer
support
photoconductive
atoms
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55127490A
Other languages
Japanese (ja)
Other versions
JPH0150905B2 (en
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55127490A priority Critical patent/JPS5752178A/en
Priority to US06/299,576 priority patent/US4394425A/en
Priority to GB8127479A priority patent/GB2086133B/en
Priority to DE19813136141 priority patent/DE3136141A1/en
Priority to CA000385692A priority patent/CA1181630A/en
Priority to FR8117327A priority patent/FR2490359B1/en
Publication of JPS5752178A publication Critical patent/JPS5752178A/en
Publication of JPH0150905B2 publication Critical patent/JPH0150905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a photoconductive member having high photosensitivity and fast photoresponsiveness with stable electric and optical properties by improving the intermediate layer between a ohotoconductive layer and a support. CONSTITUTION:A photoconductive member 100 is formed in a laminar structure made of an intermediate layer 102 and a photoconductive layer 103 on a support 101 and has a surface 104. The support 101 may be conductive or electrically insulating, and the layer 103 is formed of amorphous mateial containing silicon atoms as base and hydrogen atoms. The intermediate layer 102 is formed of non-photoconductive amorphous material containing silicon atoms and carbon atoms as base and halogen atoms, thereby effectively preventing the flow of the carrier into the layer 103 from the support 101 and having a function for readily allowing the passage of the photocarrier produced in the layer 103 due to the emission of the elecromagnetic wave from the layer 103 side to the support 101 side.
JP55127490A 1980-09-12 1980-09-13 Photoconductive member Granted JPS5752178A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP55127490A JPS5752178A (en) 1980-09-13 1980-09-13 Photoconductive member
US06/299,576 US4394425A (en) 1980-09-12 1981-09-04 Photoconductive member with α-Si(C) barrier layer
GB8127479A GB2086133B (en) 1980-09-12 1981-09-11 Photoconductive member
DE19813136141 DE3136141A1 (en) 1980-09-12 1981-09-11 PHOTO-CONDUCTIVE ELEMENT
CA000385692A CA1181630A (en) 1980-09-12 1981-09-11 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix containing carbon
FR8117327A FR2490359B1 (en) 1980-09-12 1981-09-14 PHOTOCONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55127490A JPS5752178A (en) 1980-09-13 1980-09-13 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS5752178A true JPS5752178A (en) 1982-03-27
JPH0150905B2 JPH0150905B2 (en) 1989-11-01

Family

ID=14961237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55127490A Granted JPS5752178A (en) 1980-09-12 1980-09-13 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5752178A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60144751A (en) * 1984-01-05 1985-07-31 Hitachi Ltd Manufacturing method of electrophotographic photoreceptor
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
JPS6240715U (en) * 1985-08-29 1987-03-11
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPS54145540A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS564150A (en) * 1979-06-22 1981-01-17 Minolta Camera Co Ltd Electrophotographic receptor
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5342693A (en) * 1976-09-29 1978-04-18 Rca Corp Semiconductor device including amorphous silicone layer
JPS54145540A (en) * 1978-05-04 1979-11-13 Canon Inc Electrophotographic image forming material
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS564150A (en) * 1979-06-22 1981-01-17 Minolta Camera Co Ltd Electrophotographic receptor
JPS56125881A (en) * 1980-03-06 1981-10-02 Fuji Photo Film Co Ltd Optical semiconductor element

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60144751A (en) * 1984-01-05 1985-07-31 Hitachi Ltd Manufacturing method of electrophotographic photoreceptor
EP0160369A2 (en) 1984-03-12 1985-11-06 Canon Kabushiki Kaisha Light receiving member
EP0178915A2 (en) 1984-10-15 1986-04-23 Canon Kabushiki Kaisha Light-receiving member
JPS6240715U (en) * 1985-08-29 1987-03-11
JPH0355205Y2 (en) * 1985-08-29 1991-12-09
EP0219353A2 (en) 1985-10-16 1987-04-22 Canon Kabushiki Kaisha Light receiving members
EP0220879A2 (en) 1985-10-17 1987-05-06 Canon Kabushiki Kaisha Light receiving members
EP0222568A2 (en) 1985-11-01 1987-05-20 Canon Kabushiki Kaisha Light receiving members
EP0223469A2 (en) 1985-11-02 1987-05-27 Canon Kabushiki Kaisha Light receiving members

Also Published As

Publication number Publication date
JPH0150905B2 (en) 1989-11-01

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