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JPS54123878A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS54123878A
JPS54123878A JP2995978A JP2995978A JPS54123878A JP S54123878 A JPS54123878 A JP S54123878A JP 2995978 A JP2995978 A JP 2995978A JP 2995978 A JP2995978 A JP 2995978A JP S54123878 A JPS54123878 A JP S54123878A
Authority
JP
Japan
Prior art keywords
gate oxide
oxide film
polycrystal
film
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2995978A
Other languages
Japanese (ja)
Inventor
Hiroo Masuda
Ryoichi Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2995978A priority Critical patent/JPS54123878A/en
Publication of JPS54123878A publication Critical patent/JPS54123878A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To perform high speed operation, by increasing the dielectric strength for electrostatic surge, through sufficient thickness of only gate oxide film of the transistor at the input stage.
CONSTITUTION: After locally oxidizing 6 the Si substrate 5, the SiO2 8 is formed thicker than the gate oxide film. The film 8 is left selectively with photo etching. The gate oxide thin film 9 of the internal circuit is formed and phosphorus is added by laminating the polycrystal Si 10. The polycrystal Si is selectively eliminated, the gate oxide film is removed by taking this as a mask, it is covered with the SiO2 15. By taking the polycrystal Si as a mask, as ions are injected to form the n+ layer 11. It is covered with the PSG 14 and the Al wiring 13 is provided with opening 12. With this constitution, the gate oxide film for the input stage transistor is formed thicker MOSIC than that for the internal circuit, and the dielectric strength for electrostatic surge is increased and the high performance and high speed device can simply be obtained.
COPYRIGHT: (C)1979,JPO&Japio
JP2995978A 1978-03-17 1978-03-17 Manufacture for semiconductor device Pending JPS54123878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2995978A JPS54123878A (en) 1978-03-17 1978-03-17 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2995978A JPS54123878A (en) 1978-03-17 1978-03-17 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54123878A true JPS54123878A (en) 1979-09-26

Family

ID=12290506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2995978A Pending JPS54123878A (en) 1978-03-17 1978-03-17 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54123878A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166470A (en) * 1979-06-08 1980-12-25 Stanley Electric Co Ltd Electric generator for engine
JPS61197730U (en) * 1985-05-29 1986-12-10
US5918116A (en) * 1994-11-30 1999-06-29 Lucent Technologies Inc. Process for forming gate oxides possessing different thicknesses on a semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55166470A (en) * 1979-06-08 1980-12-25 Stanley Electric Co Ltd Electric generator for engine
JPS61197730U (en) * 1985-05-29 1986-12-10
US5918116A (en) * 1994-11-30 1999-06-29 Lucent Technologies Inc. Process for forming gate oxides possessing different thicknesses on a semiconductor substrate

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