JPS5550642A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5550642A JPS5550642A JP12437478A JP12437478A JPS5550642A JP S5550642 A JPS5550642 A JP S5550642A JP 12437478 A JP12437478 A JP 12437478A JP 12437478 A JP12437478 A JP 12437478A JP S5550642 A JPS5550642 A JP S5550642A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- poly
- etched
- window
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To increase etching speed by injecting impurities ions to a poly Si-layer exposed on a Si substrate surface in an electrode forming process, and to prevent the exposure of Si from an electrode window by obviating the etching of the flanks of poly Si in an electrode wiring lower layer.
CONSTITUTION: A window is opened to a SiO2 film 3 on a Si substrate 4, and poly Si 12, to which impurities are not added, and Al 11 are stacked. An electrode 1 is made up by etching Al 11 by using a resist mask 13, and Ar ions are injected to poly Si 11. Flanks are not approximately etched because the layer 12 is completely etched for a short time if is is etched with a mixed liquid of fluoric acid and nitric acid and poly Si uncer the electrode 1 does not contain impurities. Thus, yield and reliability are improved because a Si surface does not expose from the electrode window and the causes of the deterioration of the characteristics of elements are removed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12437478A JPS5550642A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12437478A JPS5550642A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5550642A true JPS5550642A (en) | 1980-04-12 |
Family
ID=14883810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12437478A Pending JPS5550642A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550642A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066825A (en) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6224616U (en) * | 1985-07-30 | 1987-02-14 | ||
| JPS6446022A (en) * | 1987-08-11 | 1989-02-20 | Honda Motor Co Ltd | Clutch device for working machine |
-
1978
- 1978-10-09 JP JP12437478A patent/JPS5550642A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066825A (en) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | Manufacture of semiconductor device |
| JPH0324778B2 (en) * | 1983-09-22 | 1991-04-04 | Tokyo Shibaura Electric Co | |
| JPS6224616U (en) * | 1985-07-30 | 1987-02-14 | ||
| JPH0343944Y2 (en) * | 1985-07-30 | 1991-09-13 | ||
| JPS6446022A (en) * | 1987-08-11 | 1989-02-20 | Honda Motor Co Ltd | Clutch device for working machine |
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