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JPS5444481A - Mos type semiconductor device and its manufacture - Google Patents

Mos type semiconductor device and its manufacture

Info

Publication number
JPS5444481A
JPS5444481A JP11072377A JP11072377A JPS5444481A JP S5444481 A JPS5444481 A JP S5444481A JP 11072377 A JP11072377 A JP 11072377A JP 11072377 A JP11072377 A JP 11072377A JP S5444481 A JPS5444481 A JP S5444481A
Authority
JP
Japan
Prior art keywords
film
gate
manufacture
oxide film
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11072377A
Other languages
Japanese (ja)
Other versions
JPS6110995B2 (en
Inventor
Takeya Ezaki
Onori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11072377A priority Critical patent/JPS5444481A/en
Publication of JPS5444481A publication Critical patent/JPS5444481A/en
Publication of JPS6110995B2 publication Critical patent/JPS6110995B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To manufacture MOS device having the gate lingth of high accuracy and fine not by photo etching method.
CONSTITUTION: The field oxide film 2, oxide film 3 and gate oxide film 4 are placed on the Si substrate 1 and the polycrystal Si film is 5 laminated, allowing to make thicker the both side surface 3a of the film 3 by the thickness of the film 3. Next, when etching gas 6 is flown vertically, since the etching speed for the side surface 5a is slow, the film 5' is left only the side surface 5a when the film 5 is just removed from the upper surface of the films 4 and 3, and this is used for the gate. The source and drain diffusion layers 6 and 7 are shallowly made by taking the gate 5 as a mask, and the side surface diffusion to the film 5' for the lower all regions is prevented. Succeedingly, the insulation film 8 is laminated, opening is made and wiring s 11 and 12 are formed. With this constitution, the width LG of the gate 5' is determined by the thickness hP of the film 5, and since no photo etching is used, the pattern formation can be made with fine and high accuracy independently of the limit and the precision.
COPYRIGHT: (C)1979,JPO&Japio
JP11072377A 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture Granted JPS5444481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11072377A JPS5444481A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11072377A JPS5444481A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS5444481A true JPS5444481A (en) 1979-04-07
JPS6110995B2 JPS6110995B2 (en) 1986-04-01

Family

ID=14542846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11072377A Granted JPS5444481A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5444481A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783063A (en) * 1980-07-14 1982-05-24 Texas Instruments Inc Method of producing microminiature semiconductor device
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57112028A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS5952848A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS59110168A (en) * 1982-12-15 1984-06-26 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor device
JPH0287673A (en) * 1988-09-26 1990-03-28 Nec Corp Insulating gate type semiconductor device
JPH02290063A (en) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd Semiconductor device
JPH03136275A (en) * 1980-10-08 1991-06-11 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2006310838A (en) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc Power semiconductor device and its method
JP2007505505A (en) * 2004-01-10 2007-03-08 エイチブイブイアイ・セミコンダクターズ・インコーポレイテッド Power semiconductor device and method therefor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783063A (en) * 1980-07-14 1982-05-24 Texas Instruments Inc Method of producing microminiature semiconductor device
JPH03136275A (en) * 1980-10-08 1991-06-11 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device
JPS57112028A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS5952848A (en) * 1982-09-20 1984-03-27 Mitsubishi Electric Corp Manufacture of semiconductor device
JPH0370370B2 (en) * 1982-12-15 1991-11-07 Nippon Telegraph & Telephone
JPS59110168A (en) * 1982-12-15 1984-06-26 Nippon Telegr & Teleph Corp <Ntt> Manufacturing method of semiconductor device
JPH0287673A (en) * 1988-09-26 1990-03-28 Nec Corp Insulating gate type semiconductor device
JPH02290063A (en) * 1990-03-15 1990-11-29 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2007505505A (en) * 2004-01-10 2007-03-08 エイチブイブイアイ・セミコンダクターズ・インコーポレイテッド Power semiconductor device and method therefor
US7847369B2 (en) 2004-01-10 2010-12-07 Hvvi Semiconductors, Inc. Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure
US7898057B2 (en) 2004-01-10 2011-03-01 Hvvi Semiconductors, Inc. Radio frequency power semiconductor device package comprising dielectric platform and shielding plate
US8471378B2 (en) 2004-01-10 2013-06-25 Estivation Properties Llc Power semiconductor device and method therefor
JP2006310838A (en) * 2006-04-05 2006-11-09 Hvvi Semiconductors Inc Power semiconductor device and its method

Also Published As

Publication number Publication date
JPS6110995B2 (en) 1986-04-01

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