JPS54115081A - Manufacture for semiconcuctor integrated circuit device - Google Patents
Manufacture for semiconcuctor integrated circuit deviceInfo
- Publication number
- JPS54115081A JPS54115081A JP2325778A JP2325778A JPS54115081A JP S54115081 A JPS54115081 A JP S54115081A JP 2325778 A JP2325778 A JP 2325778A JP 2325778 A JP2325778 A JP 2325778A JP S54115081 A JPS54115081 A JP S54115081A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- silicon film
- mask
- taking
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052710 silicon Inorganic materials 0.000 abstract 10
- 239000010703 silicon Substances 0.000 abstract 10
- 239000002184 metal Substances 0.000 abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To increase the degree of integration, by reducing the deficiency in channel disconnection through the formation of the protective film by taking the nitride film as a mask, after forming the nitride film on the polycrystal silicon film being the gate electrode.
CONSTITUTION: The silicon oxide film 2 is formed on the major plane 1a of the silicon substrate 1, and the polycrystal silicon film 3 is formed on it. The photo resist 5 is coated on the silicon film 3 and after removing it selectively, the gate electrode 6 is formed. The higg melting point metal film 7 is coated on the silicon film 2 by taking the photo resist 5 as a mask. The photo resist 5 and the metal film 7 are removed with etching, and the silicon nitride film 9 is formed via the silicon oxide film 8 by taking the metal film 7 on the silicon film 2 as a mask. The metal film 7, silicon film 8, and silicon film 9 are removed by etching, forming the protective film on the silicon film 2 on the drain region and the source regions 10,11 and the silicon film of the surface of the electrode 6.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2325778A JPS54115081A (en) | 1978-02-28 | 1978-02-28 | Manufacture for semiconcuctor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2325778A JPS54115081A (en) | 1978-02-28 | 1978-02-28 | Manufacture for semiconcuctor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54115081A true JPS54115081A (en) | 1979-09-07 |
Family
ID=12105540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2325778A Pending JPS54115081A (en) | 1978-02-28 | 1978-02-28 | Manufacture for semiconcuctor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54115081A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514891A (en) * | 1995-06-02 | 1996-05-07 | Motorola | N-type HIGFET and method |
-
1978
- 1978-02-28 JP JP2325778A patent/JPS54115081A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514891A (en) * | 1995-06-02 | 1996-05-07 | Motorola | N-type HIGFET and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5444481A (en) | Mos type semiconductor device and its manufacture | |
| JPS54115081A (en) | Manufacture for semiconcuctor integrated circuit device | |
| JPS54131882A (en) | Semiconductor device and its manufacture | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS5533037A (en) | Manufacture of semiconductor device | |
| JPS54153583A (en) | Semiconductor device | |
| JPS56126957A (en) | Manufacture of semiconductor device | |
| JPS5527659A (en) | Method of manufacturing semiconductor device | |
| JPS53144687A (en) | Production of semiconductor device | |
| JPS55157265A (en) | Manufacturing mthod for mos field-effect transistor | |
| JPS54124687A (en) | Production of semiconductor device | |
| JPS5464480A (en) | Semiconductor device | |
| JPS5679446A (en) | Production of semiconductor device | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS54116185A (en) | Manufacture for semiconductor device | |
| JPS5518055A (en) | Method of fabricating semiconductor device | |
| JPS5469389A (en) | Production of semiconductor device | |
| JPS55166962A (en) | Manufacture of semiconductor device | |
| JPS5490976A (en) | Manufacture for mos type semiconductor device | |
| JPS57145320A (en) | Manufacture of semiconductor device | |
| JPS54134980A (en) | Manufacture of semiconductor device | |
| JPS5483784A (en) | Manufacture of semiconductor device | |
| JPS5488082A (en) | Manufacture for semiconductor device | |
| JPS5456776A (en) | Manufacture of semicondutor integrated circuit |