JPS54153583A - Semiconductor device - Google Patents

Abstract

PURPOSE: To establish the semiconductor device in which the mobility of n channel transistor is increased and the complementary element having the same performance is possible to be manufactured in lesser area.

CONSTITUTION: Taking an example of the inverter manufacture, first, the Si thin film 5 of (111) plane including acceptor is grown on the (0001) plane of the substrate 4 (Fig. a), and the part of form the CMOS inverter element is covered with the CVD SiO₂ film 6. Further, the film 5 is etched in island shape (Fig. b). The P channel forming part is covered with the photo resist 7 and B⁺ ion injection is made to the side surface of the islands of n channel forming part (Fig. c). After removing the photo resist 7, the n channel is covered with the photo resist 8 and P⁺ ion injection is made to the side surface of the islands of P channel (Fig. d). Further, the film 6 is removed, the gate oxide film 12 is formed with thermal oxidation, P channel forming part is covered with the photo resist 9, and the B⁺ ions are injected to the n channel forming part (Fig. e). Further, the n channel forming part is covered with the photo resist 10, P⁺ ions are injected (Fig. f), polycrystal Si film 12 is coated, and the film 12 is removed by leaving only the gate.

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