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JPS57145320A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57145320A
JPS57145320A JP3171981A JP3171981A JPS57145320A JP S57145320 A JPS57145320 A JP S57145320A JP 3171981 A JP3171981 A JP 3171981A JP 3171981 A JP3171981 A JP 3171981A JP S57145320 A JPS57145320 A JP S57145320A
Authority
JP
Japan
Prior art keywords
film
electrode
wiring
oxide film
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3171981A
Other languages
Japanese (ja)
Inventor
Shinichi Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP3171981A priority Critical patent/JPS57145320A/en
Publication of JPS57145320A publication Critical patent/JPS57145320A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a wiring of a high reliability in which an etching process can be omitted and any step difference is not caused in an electrode by using for a wiring material a silicide for use as the compound alloy of the metal such as a molybdenum or the like and silicon. CONSTITUTION:After a field oxide film 2 is grown in a predetermined part of silicon substrate 1 and a gate oxide film 3 is grown in the other part thereof, and a source and drain regions 6, 7 and a silicide film 8 are formed. Successively, after the oxide film on the regions 6, 7 is removed, a silicide film 8 is formed on the entire surface of the substrate 1 and further a nitride silicon film 9 is covered on the film 8. Subsequently, the films 7, 8 are removed while leaving a gate electrode part 10, wiring part 11 and source-drain contact part 12. Subsequently, the substrate 1 is placed in the oxidization atomosphere to grow an interlayer oxide film 13 by using the film 9 as a mask. finally, after the film 9 at the top of the film 8 is removed, an aluminium electrode is provided in the top appearing on the plane similar substantially to the film 13 and a source electrode 14, drain electrode 15, gate electrode 16 and wiring electrode 17 are formed respectively.
JP3171981A 1981-03-04 1981-03-04 Manufacture of semiconductor device Pending JPS57145320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3171981A JPS57145320A (en) 1981-03-04 1981-03-04 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3171981A JPS57145320A (en) 1981-03-04 1981-03-04 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57145320A true JPS57145320A (en) 1982-09-08

Family

ID=12338852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3171981A Pending JPS57145320A (en) 1981-03-04 1981-03-04 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57145320A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160634A (en) * 1984-01-31 1985-08-22 Fujitsu Ltd semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160634A (en) * 1984-01-31 1985-08-22 Fujitsu Ltd semiconductor equipment

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