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JPS5638840A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5638840A
JPS5638840A JP11459179A JP11459179A JPS5638840A JP S5638840 A JPS5638840 A JP S5638840A JP 11459179 A JP11459179 A JP 11459179A JP 11459179 A JP11459179 A JP 11459179A JP S5638840 A JPS5638840 A JP S5638840A
Authority
JP
Japan
Prior art keywords
insulation film
film
polycrystalline
metal
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11459179A
Other languages
Japanese (ja)
Other versions
JPS6227542B2 (en
Inventor
Hiroshi Nakashiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11459179A priority Critical patent/JPS5638840A/en
Publication of JPS5638840A publication Critical patent/JPS5638840A/en
Publication of JPS6227542B2 publication Critical patent/JPS6227542B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To form a low resistance electrode pattern by a method wherein an insulation detachment is performed on a polycrystalline wiring layer and the surface of a semiconductor substrate opening which is formed in self-matching using a stepped section and in that state of condition they are converted into a metal silicide. CONSTITUTION:The first silicon layer 201 is formed on one main surface of a semiconductor substrate. The layer 201 is formed into a polycrystalline silicon layer 203 through an intermediate of an insulation film 202 and a patterning is performed in self-matching way on the insulation film 202 using the polycrystalline film 203 as a mask. Then, metal is evaporated on the surface of said film 202 and a metal silicide is obtained by reacting it to silicon with heat treatment. After that, unnecessary metal on the insulation film is removed by performing an etching. Consequently, an electrical separation is maintained easily by increasing the thickness of the insulation film and this is especially useful in the formation of a base electrode and an emitter electrode of a bipolar transistor.
JP11459179A 1979-09-06 1979-09-06 Semiconductor device Granted JPS5638840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11459179A JPS5638840A (en) 1979-09-06 1979-09-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11459179A JPS5638840A (en) 1979-09-06 1979-09-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5638840A true JPS5638840A (en) 1981-04-14
JPS6227542B2 JPS6227542B2 (en) 1987-06-15

Family

ID=14641684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11459179A Granted JPS5638840A (en) 1979-09-06 1979-09-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5638840A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961179A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Bipolar semiconductor device manufacturing method
JPS6037124A (en) * 1983-08-09 1985-02-26 Seiko Epson Corp semiconductor equipment
JPS6041259A (en) * 1983-08-17 1985-03-04 Nec Corp Semiconductor device
JPS60115265A (en) * 1983-11-28 1985-06-21 Nec Corp Semiconductor device and manufacture thereof
JPS60214563A (en) * 1984-04-09 1985-10-26 Mitsubishi Electric Corp Manufacture of bipolar transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133983A (en) * 1974-09-17 1976-03-23 Mitsubishi Electric Corp Handotaisochi no seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133983A (en) * 1974-09-17 1976-03-23 Mitsubishi Electric Corp Handotaisochi no seizohoho

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5961179A (en) * 1982-09-30 1984-04-07 Fujitsu Ltd Bipolar semiconductor device manufacturing method
JPS6037124A (en) * 1983-08-09 1985-02-26 Seiko Epson Corp semiconductor equipment
JPS6041259A (en) * 1983-08-17 1985-03-04 Nec Corp Semiconductor device
JPS60115265A (en) * 1983-11-28 1985-06-21 Nec Corp Semiconductor device and manufacture thereof
JPS60214563A (en) * 1984-04-09 1985-10-26 Mitsubishi Electric Corp Manufacture of bipolar transistor

Also Published As

Publication number Publication date
JPS6227542B2 (en) 1987-06-15

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