JPS55133540A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS55133540A JPS55133540A JP4012579A JP4012579A JPS55133540A JP S55133540 A JPS55133540 A JP S55133540A JP 4012579 A JP4012579 A JP 4012579A JP 4012579 A JP4012579 A JP 4012579A JP S55133540 A JPS55133540 A JP S55133540A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- polycrystalline silicon
- silicon
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To prevent an unevenness of etching caused by metamorphosis of a polycrystalline silicon by using a nitriding film pattern as an etching mask when etching an impurity-doped polycrystalline silicon film which is provided on a semiconductor substrate. CONSTITUTION:In case of performing an etching treatment of polycrystalline silicon film on a wiring of integrated circuit, a silicon heat oxidation film 2 of approximately 1mum is formed on a silicon substrate 1, and then a crystalline silicon film 3 of about 5,000Angstrom is formed and given a conductivity to the above film by heat diffusion of phosphorus. Subsequently, about 1,000Angstrom of silicon nitriding film 4 is attached to the polycrystalline silicon film 3, and a pattern 4' is formed after silicon nitriding film 4 has been selectively removed using a photo etching. Lastly, a wiring 3 is obtained by giving a plasma etching to the polycrystalline silicon film using the pattern 4 as a mask. Hence, the unevenness of etching can be prevented by eliminating a heat oxidation process of polycrystalline silicon without having no anxiety in metamorphosis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012579A JPS55133540A (en) | 1979-04-03 | 1979-04-03 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4012579A JPS55133540A (en) | 1979-04-03 | 1979-04-03 | Manufacturing method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55133540A true JPS55133540A (en) | 1980-10-17 |
Family
ID=12572091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4012579A Pending JPS55133540A (en) | 1979-04-03 | 1979-04-03 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55133540A (en) |
-
1979
- 1979-04-03 JP JP4012579A patent/JPS55133540A/en active Pending
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