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JPS5353983A - Semiconductor non-volatile memory device - Google Patents

Semiconductor non-volatile memory device

Info

Publication number
JPS5353983A
JPS5353983A JP12828376A JP12828376A JPS5353983A JP S5353983 A JPS5353983 A JP S5353983A JP 12828376 A JP12828376 A JP 12828376A JP 12828376 A JP12828376 A JP 12828376A JP S5353983 A JPS5353983 A JP S5353983A
Authority
JP
Japan
Prior art keywords
memory device
volatile memory
semiconductor non
easy
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12828376A
Other languages
Japanese (ja)
Inventor
Hisao Katsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12828376A priority Critical patent/JPS5353983A/en
Publication of JPS5353983A publication Critical patent/JPS5353983A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain an element which makes easy the charge injection to floating gate even under a low voltage and is easy to erase writing by providing stepping on the semiconductor substrate surface of the channel region near the junction to produce an avalanche breakdown.
JP12828376A 1976-10-27 1976-10-27 Semiconductor non-volatile memory device Pending JPS5353983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12828376A JPS5353983A (en) 1976-10-27 1976-10-27 Semiconductor non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12828376A JPS5353983A (en) 1976-10-27 1976-10-27 Semiconductor non-volatile memory device

Publications (1)

Publication Number Publication Date
JPS5353983A true JPS5353983A (en) 1978-05-16

Family

ID=14980983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12828376A Pending JPS5353983A (en) 1976-10-27 1976-10-27 Semiconductor non-volatile memory device

Country Status (1)

Country Link
JP (1) JPS5353983A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038881A (en) * 1983-08-11 1985-02-28 Agency Of Ind Science & Technol Semiconductor nonvolatile memory
JPS6272171A (en) * 1985-09-26 1987-04-02 Toshiba Corp Semiconductor memory
US6121655A (en) * 1997-12-30 2000-09-19 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
JP2004247713A (en) * 2003-02-12 2004-09-02 Samsung Electronics Co Ltd Nonvolatile SONOS memory device and method of manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038881A (en) * 1983-08-11 1985-02-28 Agency Of Ind Science & Technol Semiconductor nonvolatile memory
JPS6272171A (en) * 1985-09-26 1987-04-02 Toshiba Corp Semiconductor memory
US6121655A (en) * 1997-12-30 2000-09-19 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit
US6380585B1 (en) 1997-12-30 2002-04-30 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor device capable of increased electron injection efficiency
JP2004247713A (en) * 2003-02-12 2004-09-02 Samsung Electronics Co Ltd Nonvolatile SONOS memory device and method of manufacturing the same

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