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JPS55111173A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55111173A
JPS55111173A JP1882079A JP1882079A JPS55111173A JP S55111173 A JPS55111173 A JP S55111173A JP 1882079 A JP1882079 A JP 1882079A JP 1882079 A JP1882079 A JP 1882079A JP S55111173 A JPS55111173 A JP S55111173A
Authority
JP
Japan
Prior art keywords
drain
gate
erasure
insulating film
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1882079A
Other languages
Japanese (ja)
Other versions
JPS6241431B2 (en
Inventor
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1882079A priority Critical patent/JPS55111173A/en
Publication of JPS55111173A publication Critical patent/JPS55111173A/en
Publication of JPS6241431B2 publication Critical patent/JPS6241431B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To provide a ROM which has a high speed in storage and erasure, is not limited in the number of times of reading and can electrically perform the storage and erasure, by making thin a part of a gate insulating film on the drain side of a MOS transistor and effecting prescribed ion injection to produce a channel under the part of the gate insulating film. CONSTITUTION:A nonvolatile memory transistor comprises a source 1, a drain 2, a control gate 3 for the second polycrystalline silicon layer, a floating gate 4 for the first polycrystalline silicon layer, a depression part 5, insulators 6, 7 and a substrate 8. The depression part 5 is produced by injecting an impurity of the same type as the source and the drain while using a mask constituting a thin part of a gate insulating film under the floating gate and has a heightened dielectric strength. When the drain on the side of the thin gate is set at the ground potential and a positive voltage is applied to the control gate, the threshold value of the memory trnsistor rises. When the control gate is set at the ground potential and a positive voltage is applied to the drain, the threshold value falls. These phenomena are utilized to perform storage and erasure.
JP1882079A 1979-02-20 1979-02-20 Semiconductor memory device Granted JPS55111173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1882079A JPS55111173A (en) 1979-02-20 1979-02-20 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1882079A JPS55111173A (en) 1979-02-20 1979-02-20 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS55111173A true JPS55111173A (en) 1980-08-27
JPS6241431B2 JPS6241431B2 (en) 1987-09-02

Family

ID=11982194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1882079A Granted JPS55111173A (en) 1979-02-20 1979-02-20 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55111173A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864069A (en) * 1981-10-14 1983-04-16 Hitachi Ltd Semiconductor device and manufacture thereof
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
US4868619A (en) * 1984-11-21 1989-09-19 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPH05267690A (en) * 1984-01-06 1993-10-15 Advanced Micro Devices Inc Ee prom memory cell

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON ELECTRON DEVICES=1977 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794433A (en) * 1981-10-01 1988-12-27 Kabushiki Kaisha Daini Seikosha Non-volatile semiconductor memory with non-uniform gate insulator
JPS5864069A (en) * 1981-10-14 1983-04-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPH05267690A (en) * 1984-01-06 1993-10-15 Advanced Micro Devices Inc Ee prom memory cell
JPH06163918A (en) * 1984-01-06 1994-06-10 Advanced Micro Devices Inc E2PROM memory cell
US4868619A (en) * 1984-11-21 1989-09-19 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method

Also Published As

Publication number Publication date
JPS6241431B2 (en) 1987-09-02

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