JPS5429985A - Semiconductor nonvolatile memory device - Google Patents
Semiconductor nonvolatile memory deviceInfo
- Publication number
- JPS5429985A JPS5429985A JP9583277A JP9583277A JPS5429985A JP S5429985 A JPS5429985 A JP S5429985A JP 9583277 A JP9583277 A JP 9583277A JP 9583277 A JP9583277 A JP 9583277A JP S5429985 A JPS5429985 A JP S5429985A
- Authority
- JP
- Japan
- Prior art keywords
- nonvolatile memory
- memory device
- semiconductor nonvolatile
- avalanche
- trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a nonvolatile memory which is able to inject hot carriers due to an avalanche to a trap in a gate insulating film and does not require a high voltage for writing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583277A JPS5429985A (en) | 1977-08-10 | 1977-08-10 | Semiconductor nonvolatile memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9583277A JPS5429985A (en) | 1977-08-10 | 1977-08-10 | Semiconductor nonvolatile memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5429985A true JPS5429985A (en) | 1979-03-06 |
Family
ID=14148350
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9583277A Pending JPS5429985A (en) | 1977-08-10 | 1977-08-10 | Semiconductor nonvolatile memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5429985A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60211001A (en) * | 1984-03-12 | 1985-10-23 | マンネスマン・アクチエンゲゼルシヤフト | Method and apparatus for producing hot processing tool |
JPS61296948A (en) * | 1985-06-24 | 1986-12-27 | Sumitomo Electric Ind Ltd | Production of casting ingot |
JPS626759A (en) * | 1985-07-01 | 1987-01-13 | Sumitomo Electric Ind Ltd | Manufacturing method of reinforced composite metal |
JPS62282765A (en) * | 1985-03-25 | 1987-12-08 | オスピリ−.メタルス.リミテツド | Casting method |
US5305816A (en) * | 1991-06-21 | 1994-04-26 | Sumitomo Heavy Industries, Ltd. | Method of producing long size preform using spray deposit |
-
1977
- 1977-08-10 JP JP9583277A patent/JPS5429985A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60211001A (en) * | 1984-03-12 | 1985-10-23 | マンネスマン・アクチエンゲゼルシヤフト | Method and apparatus for producing hot processing tool |
JPH0253481B2 (en) * | 1984-03-12 | 1990-11-16 | Mannesmann Ag | |
JPS62282765A (en) * | 1985-03-25 | 1987-12-08 | オスピリ−.メタルス.リミテツド | Casting method |
JPS61296948A (en) * | 1985-06-24 | 1986-12-27 | Sumitomo Electric Ind Ltd | Production of casting ingot |
JPS626759A (en) * | 1985-07-01 | 1987-01-13 | Sumitomo Electric Ind Ltd | Manufacturing method of reinforced composite metal |
US5305816A (en) * | 1991-06-21 | 1994-04-26 | Sumitomo Heavy Industries, Ltd. | Method of producing long size preform using spray deposit |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52106280A (en) | Semiconductor transistor memory cell | |
JPS5279679A (en) | Semiconductor memory device | |
GB1548796A (en) | High voltage semiconductor device | |
DE3065982D1 (en) | Semiconductor memory device using one transistor memory cell | |
JPS5429985A (en) | Semiconductor nonvolatile memory device | |
JPS5242386A (en) | Semiconducteor device | |
JPS5228277A (en) | Non-voltatile semiconductor memory device | |
JPS52117586A (en) | Semiconductor device | |
JPS51150284A (en) | Semiconductor unvolatile memory unit | |
JPS5263684A (en) | Non-volatile semiconductor memory device | |
PL210682A1 (en) | MOS STORAGE DEVICE WITH N-TYPE CHANNEL | |
JPS5353983A (en) | Semiconductor non-volatile memory device | |
JPS5292441A (en) | Semiconductor memory unit | |
JPS53112687A (en) | Semiconductor device | |
JPS52115669A (en) | Semiconductor memory device | |
JPS5279884A (en) | Non-volatile semiconductor memory device | |
JPS51123037A (en) | Negative resistance generating device | |
JPS5428576A (en) | Semiconductor nonvolatile memory device | |
JPS52104078A (en) | Semiconductor unit | |
JPS5427778A (en) | Non-volatile semiconductor memory device | |
EP0025289A3 (en) | Semiconductor memory device with multi-emitter transistor cells | |
JPS53138684A (en) | Semiconductor memory device | |
JPS53144688A (en) | Field effect semiconductor memory device and production of the same | |
JPS5277681A (en) | Nonvolatile memory device | |
JPS5291383A (en) | Semiconductor memory device |