JPH10242322A - Semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a small-pitched wiring and small size package, improve the connection reliability to a mounting board and reduce the package manufacturing cost, without its superior high radiation property, etc. SOLUTION: A ceramic board 1 having a via-type inner wiring layer 3 and a top face 2a on which semiconductor devices 6 are mounted is used as a package body. On the device mounting face 2a of the board 2 a first resin film 9 having a conductor layer 8 electrically connected to one end of the wiring layer 3 is bonded to electrically connect this layer 8 to the devices 6. On a bottom face 2b of the board 2 a second resin film 13 having through-holes corresponding to the other end of the wiring layer 3 is bonded. External layers composed of conductor balls 17 are firmly connected by connecting conductors 16 charged in the through-holes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package which realizes high heat dissipation, high wiring density, high reliability of a connection portion, and the like.

[0002]

2. Description of the Related Art Various packages made of insulating materials such as ceramics and resins on which semiconductor elements such as LSIs, ULSIs, and VLSIs are mounted are required to achieve high integration, high speed, large power consumption, and large chips of semiconductor elements. The trend toward higher density, higher speed, and higher heat dissipation has been increasing due to the increase in the number of components. Semiconductor devices are also used in a wide range of applications, from industrial applications such as workstations, personal computers, minicomputers, and large computers, to electronic devices such as portable devices, printers, copiers, cameras, televisions, and videos. The performance of the device itself has also been improved.

A package on which a high-performance and highly-integrated semiconductor element as described above is mounted must be capable of being connected to the semiconductor element at a large number of terminals and a narrow pitch, have a high wiring density, and have good heat radiation. In addition, it is required to be able to handle high-speed signals, to increase the number of input / output terminals of the package and to reduce the pitch. Further, there is a need for a technique for producing a high-performance package satisfying these conditions at low cost with high reliability and simple steps.

First, as a method of connecting a package and a semiconductor element with multiple terminals and a narrow pitch, a wire bonding method, a TAB method, a flip chip method and the like are used. In order for such a connection technology to function effectively, the package side must also have a narrow-pitch, multi-terminal inner lead part, and the connection between the package and a mounting board such as a printed circuit board must be made with a multi-terminal, narrow-pitch. And then
There is a need to increase the reliability of the connections. Further, as described above, due to the increase in the speed of the LSI, it is necessary to sufficiently consider the electrical characteristics of the package.

[0005] As described above, since the package is required to have multiple terminals and a narrow pitch and to improve electrical characteristics, the package structure is a conventional pin insertion type or QFP (Quad Flat Packa).
ge), etc., are shifting to BGA (Ball Grid Array) structures. A BGA package using a solder ball or the like as an input / output terminal of the package has advantages in that a connection distance can be shortened, and reflection and delay of a high-speed signal due to inductance of a connection portion can be suppressed. Also, BGA
In addition to shortening the connection distance using solder balls, it is easy to reduce the pitch and increase the number of terminals using ball terminals, and this narrow pitch and increase the number of terminals reduces the package size itself and increases the mounting density on the mounting board. It can be expected that electrical characteristics can be improved by reducing the parasitic capacitance, inductance, resistance, and the like of the wiring, and high-frequency characteristics can be improved by downsizing the package.

As for the heat radiation, the power consumption is improved with the speeding up of the LSI and the amount of heat generation tends to increase year by year. Therefore, it is required to improve the heat radiation of the package. In order to enhance the heat dissipation of the package, it is effective to use a ceramic base as the package body. As described above, the ceramic package, particularly the ceramic package having the BGA structure, is a package that satisfies high heat dissipation and excellent electrical characteristics, and is capable of reducing the number of terminals and the pitch. It is expected as a package for

However, the conventional ceramic package uses a ceramic multilayer wiring board as a package body and mainly carries out signal wiring by wiring layers in the ceramic multilayer wiring board.
There are limitations in increasing the density of wiring in the package and reducing the size of the package outer shape, and the manufacturing cost is higher than that of a plastic package or the like. On the other hand, a plastic package is basically inferior in heat dissipation, and therefore is inferior in terms of increasing the heat dissipation of the package.

In particular, in the case of a ceramic package having a BGA structure, when the ceramic package is mounted on a mounting boat such as a printed board, the difference in thermal expansion coefficient between the ceramic package and the printed board is large. There is a problem that the connection reliability of the ball portion is low. This difference in thermal expansion can be caused by receiving a thermal history in the reflow soldering process when mounting the BGA package on a printed circuit board, or by a change in environmental temperature during normal use. Because the thermal expansion difference with the printed circuit board is large,
Thermal stress concentrates on the solder ball part with low mechanical strength,
Cracks occur in the solder balls, and further, the solder balls are broken, thereby lowering the reliability of the connection portion.

[0009]

As described above, BG
The A-structure ceramic package has excellent electrical characteristics and high heat dissipation, and has a large number of external connection terminals and a narrow pitch. Although expected as
When mounted on a printed circuit board or the like, there is a problem that the reliability of the connection portion is low because the difference in thermal expansion coefficient between the ceramic package and the printed circuit board is large.
In addition, there is a limit in adapting to narrow-pitch wiring, downsizing of the package outer shape, and the like, and there is a problem that the manufacturing cost is basically higher than that of a plastic package or the like.

SUMMARY OF THE INVENTION The present invention has been made to address such a problem, and has been made to cope with narrower pitch wirings and to reduce the outer shape of the package without deteriorating the excellent electrical characteristics and high heat dissipation of the ceramic package. It is an object of the present invention to provide a semiconductor package which achieves miniaturization, improves reliability of a connection portion with a mounting board, and further reduces manufacturing cost as compared with a conventional ceramic package.

[0011]

According to a first aspect of the present invention, a semiconductor package according to the present invention has a first main surface on which a semiconductor element is mounted and a second main surface on which an external connection terminal is formed. A package body made of a ceramics substrate having a surface and an internal wiring layer, first and second resin base materials respectively joined to the first and second main surfaces of the ceramics substrate, A conductor layer provided on at least the first resin base material bonded to a first main surface of the ceramic substrate and electrically connected to the internal wiring layer;
A semiconductor element mounted on the first main surface side of the ceramics substrate and electrically connected to the conductor layer of the first resin base; and electrically connected to the internal wiring layer; An external connection terminal formed on the second main surface side of the ceramic substrate via a resin base material.

More specifically, the semiconductor package of the present invention has a first main surface on which a semiconductor element is mounted and a second main surface on which an external connection terminal is formed. A package body made of a flat ceramic substrate having a surface and an internal wiring layer provided thereon; and a package main body joined to a first main surface of the ceramic substrate and electrically connected to one end of the internal wiring layer. A first resin base material provided on at least one main surface of the first resin base material, and a conductor layer connected to the first main surface of the ceramic substrate, and bonding the first resin base material to the conductor layer of the first resin base material A semiconductor element electrically connected via a wire or a TAB lead; and a through hole joined to the second main surface of the ceramic substrate and provided at a position corresponding to the other end of the internal wiring layer. Having a second A resin base, and a connection conductor filled in a through hole of the second resin base, fixed to the second main surface side of the ceramic substrate, and connected to the other end of the internal wiring layer. And an external connection terminal formed of a conductive ball which is electrically connected.

Alternatively, the semiconductor device has a first main surface provided with a cavity for accommodating a semiconductor element, and a second main surface serving as a surface on which an external connection terminal is formed, And a package body made of a ceramic substrate provided with an internal wiring layer, and at least one of a conductor layer joined to a first main surface of the ceramic substrate and electrically connected to one end of the internal wiring layer. A first resin substrate provided on a main surface of the first substrate, a semiconductor element housed in a cavity of the ceramic substrate, and electrically connected to a conductor layer of the first resin substrate; A second resin base material joined to the second main surface and having a through hole at a position corresponding to the formation position of the other end of the internal wiring layer; With filled connection conductors , Secured to said second main surface side of the ceramic substrate, and is characterized by comprising an external connection terminal made from the other end electrically connected to a conductor ball of the internal wiring layer.

The semiconductor package according to claim 3 is
In particular, as described in claim 4, the semiconductor element is a semiconductor element having a flip-chip structure, and the semiconductor element having the flip-chip structure is mechanically attached to the first resin base material via an adhesive layer. And the first
And electrically connected to the conductor layer of the first resin base via connection protrusions provided on at least one of the conductor layer of the resin base and the semiconductor element.

The semiconductor package according to the present invention is further characterized in that the through hole of the second resin base has a diameter of 0.5 to 1.5 times the diameter of the conductive ball. I have. Further, as described in claim 6, the second resin base material has a conductor layer electrically connected to an internal wiring layer of the ceramic substrate.

Further, in the semiconductor package according to the present invention, the internal wiring layer of the ceramic substrate is constituted by, for example, a via-hole type wiring layer.

In the semiconductor package of the present invention, a resin substrate is joined to the first and second main surfaces of the ceramic substrate, respectively, and at least the first resin substrate joined to at least the first main surface is bonded. Is provided with a conductor layer made of, for example, a patterned copper foil. By arranging the signal wiring in such a conductor layer, the wiring width and the distance between the wirings of the signal wiring can be significantly reduced. Accordingly, it is possible to increase the density of the wiring in the package and to reduce the size of the package outer shape. In particular, when a semiconductor element having a flip-chip structure is mounted, a narrow pitch connection is possible.

Further, by providing the above-mentioned conductor layers on the first and second resin base materials, the density of the wiring in the package can be further increased. In addition, by mainly arranging the signal wiring in the conductor layer of the resin base material, the internal wiring layer of the ceramic substrate can be basically made only of the via-hole type wiring layer. Therefore, it is possible to reduce the manufacturing cost of the ceramic substrate and thus the semiconductor package.

Further, the semiconductor package of the present invention has a structure in which a resin base material is bonded to both main surfaces of a ceramic substrate as a package body, so that the package body can be compared with a case where the ceramic substrate is used alone. Can be increased substantially. Therefore, when the semiconductor package is mounted on a mounting board made of a printed circuit board or the like, the reliability of the connection part by the external connection terminal, particularly, the external connection terminal made of a conductive ball can be greatly improved.

With respect to the heat radiation of the semiconductor package of the present invention, since heat can be dissipated directly from the back surface of the semiconductor element to the ceramic substrate, a sufficiently good heat radiation can be secured as compared with a resin package or the like. However, since the resin base material is bonded to both main surfaces of the ceramic substrate, the heat radiation may be reduced as compared with a package using only the ceramic substrate. In this regard,
Increasing the diameter of the through hole of the second resin base material to, for example, 0.5 to 1.5 times the diameter of the conductive ball, and fixing the conductive ball with a connection conductor filled in such a through hole, for example, solder. Thus, heat generated in the semiconductor element can be satisfactorily dissipated to the mounting board via the conductive balls. By employing such a structure, high heat dissipation can be obtained.

[0021]

Embodiments of the present invention will be described below.

FIG. 1 is a sectional view showing a schematic structure of an embodiment of a semiconductor package according to the present invention, and FIG. 2 is an enlarged sectional view of a main part thereof. The semiconductor package 1 shown in these figures
Has a ceramic substrate 2 as a package body. The ceramic substrate 2 includes an aluminum nitride (AlN) sintered body, a silicon nitride (Si ₃ N ₄ ) sintered body,
Various ceramic materials such as an alumina (Al ₂ O ₃ ) sintered body and a low-temperature sintered glass ceramic can be used.

Of these, AlN sintered bodies are particularly preferable materials for achieving high heat dissipation of the semiconductor package 1 because of their high thermal conductivity. As the AlN sintered body used for the ceramic substrate 2, those having a thermal conductivity of 80 W / m K or more, which are generally used as a substrate material, are preferably used.

Further, since the Si ₃ N ₄ sintered body has both high strength characteristics and relatively good thermal conductivity, it is a preferable material for achieving high reliability and high heat dissipation of the semiconductor package. is there. As the Si ₃ N ₄ sintered body used for the ceramic substrate 2, one having a thermal conductivity of 50 W / m K or more is particularly preferable. A Si ₃ N ₄ sintered body is well known as a high-strength and high-toughness ceramic sintered body. Further, for example, silicon nitride powder used as a raw material of the sintered body is finely divided, highly purified, a sintering aid composition, and the like. By controlling the composition of
A Si ₃ N ₄ sintered body having relatively high thermal conductivity of 50 W / m K or more can be obtained without impairing the mechanical properties such as the original high strength and high toughness.

The other ceramic materials are also
It can be used as appropriate according to the type and use of the semiconductor element to be mounted.

The ceramic substrate 2 constituting the package body has a flat plate shape, and a via-hole type internal wiring layer 3 is provided therein. Lands 4 and 5 are provided at both ends of the via-hole type internal wiring layer 3, respectively. Here, as the internal wiring layer, not only the via hole but also a printed wiring layer or the like can be used together, but in the semiconductor package of the present invention, the signal wiring is formed by a conductor layer provided on a resin base material described later. It is preferable that the internal wiring layer of the ceramic substrate 2 is only the via hole type internal wiring layer 3 because it can be arranged. Thereby, the manufacturing cost and manufacturing man-hour of the ceramic substrate 2 as the package body can be significantly reduced.

In the ceramic substrate 2 as described above, first, a through-hole serving as a via-hole type internal wiring layer 3 is formed in a ceramic green sheet, and the through-hole is filled with a conductive paste such as a tungsten paste and a land 4 is formed. After the formation of the printed layer having a thickness of 5, the ceramic substrate 2 having the via-hole type internal wiring layer 3 and the lands 4, 5 is obtained by firing in an atmosphere corresponding to the ceramic material. A plurality of ceramic green sheets may be used. The wiring layers such as the power supply layer and the ground layer may be formed in the ceramic substrate 2. In this case, a ceramic substrate having a multilayer structure is used as the ceramic substrate 2.

On the first main surface, ie, the upper surface 2a side of the ceramic substrate 2, a semiconductor element 6 is bonded and mounted via a bonding material layer 7 such as brazing material, solder, glass-based adhesive or the like.
The semiconductor element 6 is sealed with, for example, a potting resin or the like (not shown). As described above, the semiconductor package 1 of this embodiment has a so-called cavity-up structure, and heat generated by the operation of the semiconductor element 6 is applied to the ceramic substrate 2 from the back surface of the semiconductor element 6 via the bonding material layer 7. It has a transmitted structure.

A first resin film 9 having a conductor layer 8 is joined to the upper surface of the above-mentioned ceramic substrate 2, that is, the semiconductor element mounting surface 2 a via an adhesive layer 10. For the adhesive layer 10, a thermosetting resin sheet, a thermosetting resin paste, an epoxy resin paste, a polyimide resin paste, or the like can be used. The conductor layer 8 provided on the first resin film 9 is mainly for routing the signal wiring of the semiconductor element 3, and connects the semiconductor element 6 with the land 4 on the upper surface of the ceramic substrate 2 via the bonding wire 11. Are electrically connected. That is, the conductor layer 8 of the first resin film 9 (upper conductor layer 8a specifically described later) and the electrode pad of the semiconductor element 3 are electrically connected via the bonding wire 11.

Specifically, the conductor layer 8 in this embodiment is formed of the upper conductor layer 8 formed on the upper surface side of the resin film 9.
a, a lower conductor layer 8b formed on the lower surface side of the resin film 9, and an inner conductor layer 8c for electrically connecting them.
And Upper conductor layer 8a and lower conductor layer 8b
Is made of a metal foil such as a copper foil having a thickness of about 50 μm or less, and is patterned according to a desired wiring shape. At this time, the routing of the signal wiring may be performed on both the upper conductor layer 8a and the lower conductor layer 8b, or the lower conductor layer 8b may be formed only with lands.

On the lower conductor layer 8b (on the land), corresponding to the position of the land 4 on the upper surface of the ceramic substrate 2,
For example, the connection projections 12 having a height of about 80 μm are formed of an Ag epoxy paste, an Au epoxy paste, an Ag polyimide paste, or the like. Connection protrusion 12
Can be formed by bonding Au balls, Pb-Sn-based eutectic solder balls, In-based solder balls, and the like. In addition,
A similar connection protrusion may be formed on the upper surface side land 4 of the ceramic substrate 2. The conductor layer 8 of the resin film 9 and the land 4 on the upper surface of the ceramic substrate 2 are electrically connected by abutting the connection projection 12 on the resin film 9 against the land 4 on the upper surface, and by thermocompression bonding. Have been. The mechanical bonding between the resin film 9 and the ceramic substrate 2 is basically performed by the adhesive layer 10.

The above-described resin film 9 having the conductor layer 8 and the connection protrusions 12 can be manufactured, for example, as follows. That is, first, a copper foil having a thickness of about 50 μm is prepared as a material for forming the upper conductor layer 8a, and the inner conductor layer 8c is formed of silver or the like on the surface thereof in correspondence with the position of the land 4 on the upper surface of the ceramic substrate 2. Height 80μ
Form about m projections. A copper foil having the protrusions formed thereon,
For example, a resin film 9 made of a liquid crystal polymer and having a thickness of about 50 μm and a copper foil of a similar thickness serving as the lower conductor layer 8b are superimposed. Thermocompression bonding is performed so as to be electrically connected to the copper foil 8b. The thermocompression bonding is performed under conditions that maintain the adhesion strength between the copper foil and the liquid crystal polymer film or the like.

Then, the copper foil on both sides is etched so as to have a desired wiring shape, and a desired wiring pattern is formed on the upper conductor layer 8a, and at least a land is formed on the lower conductor layer 8b. Thereafter, the connection protrusions 12 as described above are formed on the lands formed by the lower conductor layers 8b, so that the above-described upper conductor layers 8a and lower conductor layers 8b are formed.
Layer 8 having internal conductor layer 8c and connection projection 1
2 is obtained.

The resin film 9 having the conductor layer 8 and the connection protrusions 12 as described above may be formed, for example, by firstly interposing an adhesive sheet having an electrically connected portion between the resin film 9 and the ceramic substrate 2. Alternatively, after applying an adhesive to the upper surface 2a of the ceramic substrate 2, in this state, heat is applied at a temperature at which the adhesive film or the applied layer of the adhesive adheres, and a pressure sufficient to realize electrical connection (for example, By adding about 30 kg / cm ² ), the resin film 9 and the ceramic substrate 2 can be mechanically joined while being electrically connected.

A second resin film 13 is bonded to the second main surface of the ceramic substrate 2, that is, the lower surface 2 b on which the external connection terminals are formed, via an adhesive layer 10. The second resin film 13 includes the ceramic substrate 2
Hole 14 corresponding to the position of land 5 on the lower surface side of
Is provided. Around this through hole 14,
A conductor layer 15 is formed on the lower surface side main surface of the second resin film 13 as a land for solder connection.

The connection conductor 16 filled in the through hole 14 of the second resin film 13, for example, a solder is used to connect and fix a conductor ball 17 such as a Pb—Sn solder ball or an In solder ball. ing. That is, the conductive ball 17 is connected and fixed to the lower surface 2 b of the ceramic substrate 2 via the second resin film 13, and the conductive ball 17 forms a ball terminal 18. Note that, as the conductive ball 17, various types of conductive balls having at least a surface portion having conductivity, such as a metal ball and a metal-coated resin ball, can be used.

It is preferable that the opening diameter of the through hole 14 is in the range of 0.5 to 1.5 times the diameter of the conductive ball 17. By connecting and fixing the conductive balls 17 via the connecting conductors 16 filled in such large-diameter through holes 14, heat generated in the semiconductor element 6 is transferred through the connecting conductors 16 and the conductive balls 17. , Can be satisfactorily radiated to the mounting board side. Through hole 14
If the opening diameter of the conductive ball 17 is less than 0.5 times the diameter of the conductive ball 17, the above-described heat radiation effect may not be sufficiently obtained, while if it exceeds 1.5 times, the mounting density of the conductive ball 17 may be reduced. Become.

Here, the ball terminal 18 mainly has a function as an external connection terminal, and the ball terminal 18a serving as the external connection terminal has a lower surface electrically connected to the via-hole type internal wiring layer 3. It is electrically connected to the side lands 5 via connection conductors 16. However, a part is formed irrespective of the position of the via-hole type internal wiring layer 3. This ball terminal 1 having no electrical connection relationship
Reference numeral 8b denotes a thermal ball for thermal radiation, which is a so-called thermal ball, which contributes to an increase in a bonding area with a mounting board on which the semiconductor package 1 is mounted.

As described above, the lower surface 2 of the ceramic substrate 2
By increasing the heat dissipation area from the ceramics substrate 2 to the mounting board by forming the ball terminals 18b as thermal balls on the b side so as not to affect the arrangement and the like of the ball terminals 18a as external connection terminals. Can be. Thereby, the heat dissipation of the semiconductor package 1 can be further improved. The ball terminals 18 are formed, for example, by applying Ni / Au plating or the like to the surface of the lower land 5, and then printing and filling an Sn-Pb eutectic solder paste or the like in each through-hole 14. P
A conductive ball 17 made of a b-eutectic solder ball (for example, a 95% Pb eutectic solder ball) or the like is placed, and a solder paste is melted and joined.

As described above, the semiconductor package 1 according to the present embodiment constitutes a package having a BGA structure. Such a semiconductor package 1 is mounted on a mounting board such as a multilayer printed circuit board. At this time, ball terminals 18 as external connection terminals of the semiconductor package 1 are used.
“a” is electrically connected to the wiring layer of the mounting board to form a semiconductor mounting component.

In the semiconductor package 1 of the above-described embodiment, the signal wiring is mainly routed by the conductor layer 8 provided on the first resin film 9. As described above, a metal foil such as a copper foil having a thickness of 10 μm or less can be used for such a conductor layer 8.
μm and a high-density wiring with a wiring distance of 20 μm can be realized. Therefore, even with the semiconductor element 6 having a large number of inputs and outputs, not only can the signal wiring be easily routed, but also the package itself can be reduced in size. That is, it is possible to achieve a higher density of the wiring in the package and a reduction in the package size based on the higher density. Further, the semiconductor element 6 and the inner lead portion on the package side can be connected at a narrow pitch.

Here, in the semiconductor package 1 shown in FIG. 1, the wiring pattern is formed only on the conductor layer 8 formed on the first resin film 9, but for example, as shown in FIG. Similarly, on the surface of the resin film 13 of No. 2,
By forming the conductor layer 15a having a wiring pattern (15b is a land conductor layer), the density of the wiring in the package can be further increased.

Since the signal wiring is basically routed by the conductor layer 10 of the first resin film 11 (and furthermore, the conductor layer 15a of the second resin film 13), the internal wiring layer of the ceramic substrate 2 is Via-hole type internal wiring layer 3
It can only be. As a result, the manufacturing cost and manufacturing man-hour of the ceramic substrate 2 itself can be greatly reduced as compared with the conventional ceramic multilayer wiring substrate in which complicated multilayer wiring is formed inside, and the manufacturing cost of the semiconductor package 1 can be reduced. Can be reduced.

The semiconductor package 1 of this embodiment has two main surfaces 2 of a ceramic substrate 2 as a package body.
a and 2b have a structure in which the resin films 9 and 13 are bonded to each other, so that when compared to a case where the ceramic substrate is used alone or a resin substrate or the like is bonded to only one surface of the ceramic substrate, The thermal expansion coefficient of the package body tends to increase.

That is, the actual elongation of the bonding system between the resin material and the ceramic material is: λ = (λ _{s es es} + λ _{c ec ec} ) / (A _{es es} + A
_c E _c ). Here, the subscript s is resin, c is ceramics, λ is the amount of free expansion and elongation, A is the cross-sectional area, and E is the longitudinal elastic modulus. As described above, since the elongation of the bonding system between the resin material and the ceramic material is the sum of the respective components, this embodiment has a structure in which the resin films 9 and 13 are bonded to both the main surfaces 2a and 2b of the ceramic substrate 2 respectively. Of the semiconductor package 1 moves in a direction in which the amount of extension approaches a printed board or the like on which the semiconductor package 1 is mounted. Therefore, the substantial difference in the coefficient of thermal expansion between the semiconductor package 1 and the printed circuit board or the like is reduced, and the reliability of the connection portion by the ball terminals 18 can be greatly increased.

In addition, since the connection between the first resin film 9 and the ceramic substrate 2 is performed using the adhesive layer 10 and the connection projections 12, the mechanical bonding strength is ensured. , Electrical connection reliability can be sufficiently obtained. Further, with respect to the second resin film 13, a sufficient mechanical bonding strength is obtained by the adhesive layer 10, and the second resin film 13 is connected to the second resin film 13 through the connection conductor 16 filled in the relatively large-diameter through hole 14. Since the balls 17 are connected and fixed, a decrease in heat dissipation due to the second resin film 13 can be suppressed as much as possible.

Regarding the heat radiation of the semiconductor package 1,
The semiconductor element 6 is connected to the ceramic substrate 2 via the bonding material layer 7.
Since the semiconductor element 6 is mounted on the upper surface, heat generated by the operation of the semiconductor element 6 can be dispersed to the ceramic substrate 2 from the back surface. Here, the heat generated in the semiconductor element 6 is generally dispersed and radiated to the package body in contact with the semiconductor element 6. At this time, the heat radiation differs depending on the thermal conductivity of the package body. For example, when the package body is made of a resin, for example, the thermal conductivity of a polyimide resin is 0.12 to 0.2 W / mK, which is considerably lower than the thermal conductivity of silicon constituting a semiconductor element. Heat generated from the polyimide resin cannot be dissipated from the polyimide resin, and heat is stored in the semiconductor element. Therefore, there is a high possibility that the semiconductor element malfunctions due to heat.

On the other hand, the semiconductor package 1 of this embodiment
As described above, the semiconductor element 6 is bonded and mounted on the ceramic substrate 2 via the bonding material layer 7 as described above. In the case of an AlN sintered body that is mentioned as one of the constituent materials of the ceramic substrate 2, for example, Since the thermal conductivity of 170 W / mK and 1000 times or more of that of the resin can be realized, the heat generated in the semiconductor element 6 is transferred to the ceramic substrate 2 as a package body.
Can be dispersed well. Further, surface heat radiation from the ceramic substrate 2 and heat radiation to the mounting board via the connection conductors 16 and the conductive balls 17 can be expected as described above. Therefore, heat generated in the semiconductor element 6 can be satisfactorily dissipated through the ceramic substrate 2, and malfunction of the semiconductor element 6 can be prevented.

As described above, the semiconductor package 1 having the BGA structure according to this embodiment has a high wiring density, a high reliability of the connection portion, a low cost, etc., without deteriorating the high heat radiation by the ceramic substrate 2. Is realized. In addition, when the semiconductor package 1 having the actually manufactured BGA structure was mounted on a mounting board made of a glass epoxy substrate using a eutectic solder paste, there was no problem in terms of electrical characteristics, and the heat radiation characteristics were 7.5K at a power consumption of 7W. / W and good thermal properties were obtained. With regard to mounting reliability, 1000 cycles were cleared at a temperature change of 100K.

In FIG. 1, the case where the conductor layers 8a and 8b are provided on both surfaces of the first resin film 9 and the connection projections 12 are formed on the lower conductor layer 8b has been described. By piercing the resin film and projecting its tip to the opposite side of the resin film, the internal conductor layer and the connection projection can be used together. In addition, the resin substrate is not limited to the resin film described above,
Although it is possible to use a copper-clad resin substrate, etc., in order to increase the wiring density, use a resin film with a metal foil with a thickness of, for example, 30 μm or less bonded by thermocompression bonding or the like. Is preferred.

Next, another embodiment of the semiconductor package of the present invention will be described with reference to FIG.

The semiconductor package 19 shown in FIG. 4 uses a so-called TAB chip 20 as a semiconductor element, and includes a conductor layer 8 (specifically, an upper conductor layer 8a) of the first resin film 9 and the TAB chip 20. Are electrically connected via a TAB lead 21 formed in advance on the TAB chip 20. Other structures are the same as those of the semiconductor package 1 described above.

As described above, the semiconductor package of the present invention can be effectively applied to the TAB chip 20, and the same effects as those of the semiconductor package 1 of the above-described embodiment can be obtained. In addition, as the ceramic substrate 2 on which the TAB chip 20 is mounted, a ceramic substrate with a cavity described in an embodiment to be described later may be used.

Next, still another embodiment of the semiconductor package of the present invention will be described with reference to FIG.

A semiconductor package 22 shown in FIG. 5 is a package on which a semiconductor element 23 having a flip-chip structure is mounted, and has a first main surface, that is, an upper surface 24a of a ceramic substrate 24 made of a material similar to that of the above-described embodiment.
On the side, a cavity 25 for housing the semiconductor element 23 is formed. The semiconductor element 23 having a flip chip structure is accommodated in the cavity 25 so that the back surface thereof is in direct contact with the bottom surface of the cavity 25, that is, the ceramic substrate 24.

As described above, the semiconductor package 22 of this embodiment has a so-called cavity-up structure, in which heat generated by the operation of the semiconductor element 23 is directly transmitted to the ceramic substrate 24 from the back surface. . For example, an Au ball is formed as a bump terminal 23a on the electrode pad of the semiconductor element 23 by wire bonding or the like, thereby enabling flip-chip mounting. The semiconductor element 23 has the cavity 2
5 may be joined to the bottom surface of the ceramic substrate 2 using a joining material such as brazing material, solder, or a glass-based adhesive.
Even if it is only in contact with 4, the heat dissipation from the semiconductor element 23 to the ceramic substrate 24 can be sufficiently ensured. In this embodiment, the semiconductor element 23 is only housed in the cavity 25.

On the cavity forming surface 24 a of the ceramic substrate 24, that is, on the mounting surface of the semiconductor element 23, similarly to the above-described embodiment, a first layer having the conductor layer 8 is provided.
Resin film 9 is bonded and fixed via an adhesive layer 10. The first resin film 9 and the ceramic substrate 24 are electrically and mechanically connected in the same manner as in the above-described embodiment, and the semiconductor element 23 and the first resin film 9 are similarly connected. Electrically and mechanically connected.

The first resin film 9 in this embodiment has the conductor layer 8 formed only on one main surface, that is, only on the lower surface. The conductor layer 8 includes a ceramic substrate 24
Upper surface side land 4 and bump terminal 2 of semiconductor element 23
The connection projections 12 are respectively formed corresponding to the respective positions of 3a. Further, an anisotropic conductive sheet, an anisotropic conductive paste, or the like can be used to connect the first resin film 9 and the semiconductor element 23.

The second resin film 13 is bonded to the second main surface of the ceramic substrate 24, that is, the lower surface 24b serving as the surface on which the external connection terminals are formed, via the adhesive layer 10, as in the above-described embodiment. A conductive ball 17 is connected and fixed via a connecting conductor 16 similarly filled in the through hole 14, and a ball terminal 18 is fixed.
(A ball terminal 18a as an external connection terminal).

In the semiconductor package 22 of this embodiment, first, the semiconductor element 23 is housed in the cavity 25 so that the semiconductor element 2 having the flip-chip structure
In this state, the semiconductor element 23 and the ceramic substrate 24 are in direct contact with each other after the electrical connection to the third electrode pad is facilitated. Thereby, the heat generated by the operation of the semiconductor element 23 can be directly dispersed from the back surface of the semiconductor element 23 to the ceramic substrate 2.

Further, heat radiation from the ceramic substrate 24 to the mounting board via the connecting conductors 16 and the conductive balls 18 can be expected from the ceramic substrate 24. Therefore, the heat generated in the semiconductor element 23 can be satisfactorily radiated through the ceramic substrate 24, and the malfunction of the semiconductor element 23 can be prevented. That is, it is possible to achieve high heat dissipation of the semiconductor package 22 corresponding to the flip chip.

The electrical connection between the semiconductor element 23 having the flip-chip structure and the package body is made by mounting the semiconductor element 23 in the cavity 25 of the ceramic substrate 24 and bonding the same to the first resin film 9. Since the connection is performed by the provided conductor layer 8, high heat dissipation from the semiconductor element 23 can be satisfied, and electrical connection with the semiconductor element 23 having a flip-chip structure can be favorably performed.

In the semiconductor package 22 of this embodiment, other effects such as higher wiring density, higher reliability of the connection portion, lower cost, and the like can be obtained in the same manner as in the above-described embodiment. .

The partial structures of the semiconductor package shown in each figure can be freely combined and used. In the above-described embodiment, an example in which the present invention is applied to a BGA package has been described.
It does not necessarily exclude application to a package or a PGA package.

[0065]

As described above, according to the semiconductor package of the present invention, it is possible to cope with narrower-pitch wiring and reduce the outer shape of the package without deteriorating the high heat radiation characteristics when a ceramic substrate is used. It is possible to reduce the size of the device, to improve the reliability of the connection portion with the mounting board and the like, and to reduce the manufacturing cost. The industrial value of such a semiconductor package is extremely large.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a schematic structure of an embodiment of a semiconductor package of the present invention.

FIG. 2 is an enlarged sectional view of a main part of the semiconductor package shown in FIG.

FIG. 3 is a sectional view showing a schematic structure of a modification of the semiconductor package shown in FIG. 1;

FIG. 4 is a cross-sectional view showing a schematic structure of another embodiment of the semiconductor package of the present invention.

FIG. 5 is a sectional view showing a schematic structure of still another embodiment of the semiconductor package of the present invention.

[Explanation of symbols]

 1, 19, 22 BGA structure semiconductor package 2, 24 Ceramic substrate 3 Via-hole type internal wiring layer 6 Semiconductor element 8, 15 Conductor layer 9 First resin Film 11 Bonding wire 12 Connection protrusion 13 Second resin film 14 Through hole 16 Connection conductor 17 Conductive ball 20 TAB chip 21 TAB lead 23 Flip Semiconductor device with chip structure 25 Cavity

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Yasumoto Yasumoto 2-4-4 Suehirocho, Tsurumi-ku, Yokohama-shi, Kanagawa Prefecture Toshiba Keihin Works Co., Ltd. (72) Inventor Hiroki Asai 2-chome, Suehirocho, Tsurumi-ku, Yokohama-shi, Kanagawa 4 Toshiba Keihin Works Co., Ltd.

Claims (7)

[Claims] A first main surface on which a semiconductor element is mounted;
A package body made of a ceramic substrate having a second main surface on which an external connection terminal is formed and provided with an internal wiring layer; and a package body joined to the first and second main surfaces of the ceramic substrate, respectively. First and second resin substrates, and a conductor layer provided on at least the first resin substrate joined to the first main surface of the ceramic substrate and electrically connected to the internal wiring layer A semiconductor element mounted on the first main surface side of the ceramic substrate and electrically connected to a conductor layer of the first resin base; electrically connected to the internal wiring layer; 2. A semiconductor package comprising: an external connection terminal formed on a second main surface side of the ceramic substrate via a second resin substrate. 2. A first main surface on which a semiconductor element is mounted;
A package body made of a flat ceramic substrate provided with an internal wiring layer and a second main surface serving as a surface on which an external connection terminal is formed; and a package main body joined to the first main surface of the ceramic substrate, A first resin base provided on at least one main surface with a conductor layer electrically connected to one end of the internal wiring layer; and a first main surface of the ceramic substrate bonded and mounted, A semiconductor element electrically connected to the conductor layer of the first resin base via a bonding wire or a TAB lead; and a second end of the internal wiring layer joined to the second main surface of the ceramic substrate. A second resin substrate having a through hole provided at a position corresponding to the portion, and a connection conductor filled in the through hole of the second resin substrate, the second main surface of the ceramic substrate Fixed on the side And an external connection terminal comprising a conductive ball electrically connected to the other end of the internal wiring layer. 3. A ceramic having a first main surface provided with a cavity for accommodating a semiconductor element and a second main surface serving as a surface on which external connection terminals are formed, and provided with an internal wiring layer. A first package body formed of a substrate; and a first conductive layer bonded to a first main surface of the ceramic substrate and electrically connected to one end of the internal wiring layer provided on at least one main surface. A semiconductor element housed in a cavity of the ceramic substrate, electrically connected to a conductor layer of the first resin substrate, and joined to a second main surface of the ceramic substrate; A second resin base having a through hole at a position corresponding to a formation position of the other end of the internal wiring layer, and a connection conductor filled in the through hole of the second resin base, The second of the ceramic substrate It is fixed to the side, and a semiconductor package characterized by comprising an external connection terminal made from the other end electrically connected to a conductor ball of the internal wiring layer. 4. The semiconductor package according to claim 3, wherein said semiconductor element is a semiconductor element having a flip-chip structure, and said semiconductor element having said flip-chip structure is provided on said first resin base material via an adhesive layer. Electrically connected to the conductor layer of the first resin base via a connection protrusion provided on at least one of the conductor layer of the first resin base and the semiconductor element. A semiconductor package characterized in that it is electrically connected. 5. The semiconductor package according to claim 2, wherein the through-hole of the second resin base has a diameter of 0.5 to 1.5 times the diameter of the conductive ball. package. 6. The semiconductor package according to claim 2, wherein the second resin base has a conductor layer electrically connected to an internal wiring layer of the ceramic substrate. Semiconductor package. 7. The semiconductor package according to claim 1, wherein the internal wiring layer of the ceramic substrate is formed of a via-hole type wiring layer.