JPH09260853A - Ceramic circuit board and its manufacture - Google Patents
Ceramic circuit board and its manufactureInfo
- Publication number
- JPH09260853A JPH09260853A JP6619796A JP6619796A JPH09260853A JP H09260853 A JPH09260853 A JP H09260853A JP 6619796 A JP6619796 A JP 6619796A JP 6619796 A JP6619796 A JP 6619796A JP H09260853 A JPH09260853 A JP H09260853A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- ceramic
- circuit board
- via conductor
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、電子機器のセラミ
ック回路基板およびその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board for electronic equipment and a method for manufacturing the same.
【0002】[0002]
【従来の技術】セラミック回路基板に内蔵導体を配し、
これと表面導体とをビア導体によって接合してなる電子
機器用の回路基板は知られているが、近年電子機器の小
型化および多機能化の要望が強くなり、セラミック基板
と内蔵導体を多層に配置した多層回路基板が多く用いら
れる。セラミック多層回路基板においては、セラミック
にW,Moからなる導体を内蔵させ、その内蔵導体を表
面基板に設けたビアから露出させて、表層に形成したC
uを主成分とする金属厚膜よりなる表面導体をビアにお
ける中間金属層を介して連接した構造の基板が広く用い
られている。かかる基板は内蔵導体および表面導体共に
非酸化性雰囲気中での焼成により製造しているが、より
生産性の高い空気中での焼成が可能なAg系、Au系の
金属を主とする表面導体を形成する製造方法も開発され
ている。この空気中焼成を利用する場合には内蔵導体で
あるWやMoの酸化が発生するため、内蔵導体と表面導
体間の接続はかなり技術的に困難なものであった。2. Description of the Related Art A built-in conductor is arranged on a ceramic circuit board,
Circuit boards for electronic devices, in which this and surface conductors are joined by via conductors, are known, but in recent years there has been a strong demand for miniaturization and multi-functionalization of electronic devices, and ceramic substrates and built-in conductors have become multi-layered. Arranged multilayer circuit boards are often used. In a ceramic multi-layer circuit board, a conductor made of W and Mo is built in the ceramic, and the built-in conductor is exposed from a via provided on the surface board and formed on the surface layer.
A substrate having a structure in which a surface conductor made of a thick metal film containing u as a main component is connected via an intermediate metal layer in a via is widely used. Although both the built-in conductor and the surface conductor are manufactured by firing in a non-oxidizing atmosphere, such a substrate is a surface conductor mainly made of Ag-based or Au-based metal that can be fired in air with higher productivity. A manufacturing method for forming the has also been developed. When this firing in air is used, the built-in conductors W and Mo are oxidized, so that the connection between the built-in conductor and the surface conductor was technically difficult.
【0003】特公平5−44200号公報に記載された
多層回路基板はアルミナを主成分とする電気絶縁基板に
W又はMoからなる内蔵導体及び電気絶縁層を交互に積
層し、最外層絶縁層中に内蔵導体が露出するビアを設
け、該ビア部分にW又はMoによって還元されない低融
点ガラス材料と貴金属とからなる導体材料を充填して焼
成し、その上に表面導体を設けて焼成し、内蔵導体層の
劣化のない多層回路基板を提供せんとするものである。The multilayer circuit board described in Japanese Patent Publication No. 5-44200 has a structure in which built-in conductors made of W or Mo and electric insulating layers are alternately laminated on an electric insulating substrate containing alumina as a main component to form an outermost insulating layer. Is provided with a via in which the built-in conductor is exposed, the via portion is filled with a conductor material composed of a noble metal and a low-melting-point glass material that is not reduced by W or Mo, and fired, and then a surface conductor is provided thereon and fired. An object of the present invention is to provide a multilayer circuit board without deterioration of a conductor layer.
【0004】[0004]
【発明が解決しようとする課題】本発明は、従来の技術
を検討した結果、表面導体とビア内に配置した導体とを
接合する際に接続不良が発生することが判った。原因と
しては以下のことが考えられる。Ag系、Au系、Cu
系等の表面導体はセラミック基板と強固に接合されるこ
とが必要であるため、表面導体形成材料中には一般的に
ガラスフリットが含有されている。すなわち、表面導体
形成材料は、通常、金属粉末、有機ビヒクル、ガラスフ
リットを主としてペースト状に構成されており、これを
スクリーン印刷法で所望の回路に印刷し、850℃程度
で焼成して形成する。ガラスフリットは焼成中にセラミ
ックと金属の接合を行うが、ビア導体との接合時には、
ガラスフリットは不要なものであり、ビア導体中に溶融
フリットの侵入がなければビア導体と表面導体との間に
溶融ガラスフリットが多量に存在することとなり、これ
が固化して接続不良の原因となる。そこで本発明はかか
る現象をなくして、ビア導体と表面導体との接続を良好
にして優れた導電性を確保するものである。In the present invention, as a result of examining the conventional techniques, it was found that a connection failure occurs when the surface conductor and the conductor arranged in the via are joined. The possible causes are as follows. Ag-based, Au-based, Cu
Since the surface conductor of a system or the like needs to be firmly bonded to the ceramic substrate, the surface conductor forming material generally contains glass frit. That is, the surface conductor forming material is usually composed mainly of a metal powder, an organic vehicle, and a glass frit in a paste form, which is printed on a desired circuit by a screen printing method and baked at about 850 ° C. . The glass frit joins the ceramic and metal during firing, but when joining the via conductor,
The glass frit is unnecessary, and if there is no molten frit in the via conductor, there will be a large amount of molten glass frit between the via conductor and the surface conductor, which solidifies and causes a connection failure. . Therefore, the present invention eliminates such a phenomenon and ensures good connection between the via conductor and the surface conductor to ensure excellent conductivity.
【0005】[0005]
【課題を解決するための手段】本発明は、少なくともビ
アおよび表面に金属導体を配したセラミック回路基板に
おいて、ビア導体と表面導体とを接合するため、セラミ
ック基板内に形成するビア導体が前記表面導体との接合
面において空隙率5%以上の表層ビア導体に表面導体が
接合されたものであるセラミック回路基板である。According to the present invention, in a ceramic circuit board in which at least a via and a metal conductor are arranged on the surface, the via conductor and the surface conductor are joined to each other. A ceramic circuit board in which a surface conductor is joined to a surface layer via conductor having a porosity of 5% or more on a joint surface with the conductor.
【0006】本発明は、又、セラミック基板材料の表面
にビアを形成し、該ビア内に少なくとも露出部近傍が焼
成後に空隙率5%以上にするための表層ビア導体材料を
配置し、同時焼成した後、ビアを中心とした表面所定部
位に、金属粉末を主成分とし、これにガラスフリットと
バインダを混話してなる導体ペーストをもって回路パタ
ーンを印刷し焼成することによって表面導体を形成する
セラミック回路基板の製造方法である。According to the present invention, a via is formed on the surface of a ceramic substrate material, and a surface layer via conductor material for porosity of 5% or more is provided in the via at least in the vicinity of an exposed portion after firing, and the via firing is performed simultaneously. After that, a ceramic circuit, in which a surface conductor is formed by printing a circuit pattern with a conductor paste containing metal powder as a main component on which a glass frit and a binder are intermixed and firing at a predetermined portion of the surface centered on the via, is formed. It is a method of manufacturing a substrate.
【0007】上記において、表面導体は金属導体材料と
ガラスフリットにより形成されたものである。又、セラ
ミック基板材料はAl2O3、AlNも適用できるが10
00℃以下で焼成可能なセラミックが望ましい。ビア導
体材料および表面導電材料は、W,Mo,Mo−Mn,
Ag,Ag−Pd,Ag−Pt,Au,Cu等の適宜の
組合せで適用できる。又、表面導電材料に含まれるガラ
スフリットとしては、金属材料がW,Mo,Mo−Mn
である場合には、CaO−MgO−SiO2系ガラスフ
リットが、又、Ag,Ag−Pd,Ag−Pt,Au,
Cuである場合にはPbO−SiO2−Al2O3−B2O
3系、SiO2−CaO−Al2O3−B2O3系等が好適で
ある。In the above, the surface conductor is formed of a metal conductor material and glass frit. Al 2 O 3 and AlN can be used as the ceramic substrate material, but 10
A ceramic that can be fired at 00 ° C or lower is desirable. Via conductor material and surface conductive material are W, Mo, Mo-Mn,
Appropriate combinations of Ag, Ag-Pd, Ag-Pt, Au, Cu and the like can be applied. Further, as the glass frit contained in the surface conductive material, the metal material is W, Mo, Mo-Mn.
In the case of, the CaO-MgO-SiO 2 based glass frit may also contain Ag, Ag-Pd, Ag-Pt, Au,
If it is Cu is PbO-SiO 2 -Al 2 O 3 -B 2 O
3 system, SiO 2 -CaO-Al 2 O 3 -B 2 O 3 system and the like.
【0008】又、ビア導体の表面導体との接合面を空隙
率5%以上としてビア導体と表面導体とを接合するの
は、表面導体中のガラスフリットの溶融物がビア導体と
の接合面に偏在しないように、ビア導体の接合面の5%
以上の空隙中に浸入できるようにしたものである。空隙
率5%未満では、ビア導体と表層導体間に、表面導体に
由来するガラスフリットの濃縮部が形成され易くなり、
場合によっては電気的導通が遮断される。空隙率5%以
上では、このガラスフリットのビア導体への濃縮部の形
成が行われず、電気的導通が保たれる。空隙率の最大値
は上部導体とビア導体が導通できる範囲であれば良い。
なお、本発明における空隙率は次の定義による。Further, the via conductor and the surface conductor are joined to each other with the porosity of the via conductor and the surface conductor to be joined to 5% or more because the melted material of the glass frit in the surface conductor is attached to the via conductor. 5% of the via conductor joint surface to prevent uneven distribution
It is designed to be able to penetrate into the above voids. If the porosity is less than 5%, a concentrated portion of the glass frit derived from the surface conductor is likely to be formed between the via conductor and the surface layer conductor,
In some cases, electrical continuity is cut off. When the porosity is 5% or more, the concentrated portion of the glass frit is not formed on the via conductor, and the electrical continuity is maintained. The maximum value of the porosity may be in the range where the upper conductor and the via conductor can be conducted.
The porosity in the present invention is defined as follows.
【0009】[0009]
【数1】 [Equation 1]
【0010】[0010]
【発明の実施の形態】空隙率5%以上の構成とするため
には下記いくつかの手段がある。 ビアへ充填する導電ペースト中へ添加する材料の焼
結完了温度は基板のセラミック材料の焼結完了温度より
も高い材料を混入する。 ビアの導電材料として焼結性の悪い金属材料を使用
する。 ビアの導電材料に蒸発飛散する有機物を添加する。 基板の焼成後、ビア導電体表面に機械的に微細な穴
をあける。BEST MODE FOR CARRYING OUT THE INVENTION There are the following several means for forming a structure having a porosity of 5% or more. The sintering completion temperature of the material added to the conductive paste filled in the via is higher than the sintering completion temperature of the ceramic material of the substrate. A metal material having poor sinterability is used as the conductive material of the via. Organic substances that evaporate and scatter are added to the conductive material of the via. After firing the substrate, mechanically fine holes are drilled in the via conductor surface.
【0011】[0011]
【実施例】以下具体的な実施例について述べる。 実施例1 図1に本発明を適用する回路基板の説明図で、1はセラ
ミック基板、2は表面導体、3は内蔵導体、4はビア導
体、5,6は他のビアを示す。セラミック基板1用の材
料として、CaO−Al2O3−SiO2−B2O3系ガラ
スとα−Al2O3との60:40(重量比)混合よりな
る低温焼成セラミックを用いた。表面導体2としてはA
gとPdを重量比で85:15の割合で混合した粉末に
PbO−SiO2−B2O3系ガラスフリットを5%含有
させたものを用いた。ビア導体4としては図2に拡大し
て示すように内部ビア導体4aと表層ビア導体4bとに
分け、内部ビア導体4aとしては100%Agを用い
た。表層ビア導体4bとしてはAgとPdとを重量比で
90:10の割合で混合した粉末を用いた。なお、基板
内部のビア5には、前記内部ビア導体4aと同じ導体
を、又、反対表面側のビア6には前記の表層ビア導体4
bと同じ導体を適用してもよい。この表層ビア導体材料
は内部ビア導体材料Agよりも焼結性の悪いPdを含ん
でいるため、すなわち前述の空隙率5%以上とするため
の手段に相当し、焼結後の空隙率が約6%となるもの
である。EXAMPLES Specific examples will be described below. Example 1 FIG. 1 is an explanatory diagram of a circuit board to which the present invention is applied, in which 1 is a ceramic substrate, 2 is a surface conductor, 3 is a built-in conductor, 4 is a via conductor, and 5 and 6 are other vias. As a material for the ceramic substrate 1, a low-temperature fired ceramic made of a mixture of CaO—Al 2 O 3 —SiO 2 —B 2 O 3 glass and α-Al 2 O 3 at a ratio of 60:40 (weight ratio) was used. A for the surface conductor 2
was used a PbO-SiO 2 -B 2 O 3 based glass frit is contained 5% g and Pd powder in a mixing ratio of 85:15 by weight. The via conductor 4 was divided into an internal via conductor 4a and a surface layer via conductor 4b as shown in an enlarged scale in FIG. 2, and 100% Ag was used as the internal via conductor 4a. As the surface layer via conductor 4b, a powder obtained by mixing Ag and Pd in a weight ratio of 90:10 was used. The via 5 inside the substrate is the same conductor as the internal via conductor 4a, and the via 6 on the opposite surface side is the surface layer via conductor 4 described above.
The same conductor as b may be applied. This surface layer via conductor material contains Pd, which has poorer sinterability than the internal via conductor material Ag, that is, it corresponds to the above-mentioned porosity of 5% or more. It is 6%.
【0012】つぎに製造方法について説明する。上記セ
ラミック基板1用のセラミック粉体(平均粒径0.1〜
10μm程度)をポリビニルブチラール樹脂を溶剤(ト
ルエン)と共にボールミルにて混合し、ドクターブレー
ド法によってセラミックグリーンシートを作製した。こ
れを所望の形状に切断し、さらに層間の導通を得るため
のビアホールを打抜き金型をもって形成した。そして、
ビア内にまず内部ビア導体4a材料を、さらにその上に
表層ビア導体4b材料を印刷法によって充填し、又、必
要に応じて内部配線(Ag100%等)をスクリーン印
刷法により形成した。ついで、必要枚数のセラミックグ
リーンシートを熱圧着した後に、セラミックの焼結温度
(900℃)にて焼成した。得られた焼結セラミック板
上にガラスフリットを含有した表面導体2材料をビア表
面と接合するように形成し、又、必要に応じて抵抗体等
も形成した後に表面導体の焼結温度(900℃)にて焼
結してセラミック回路基板を得た。ビア径0.25m
m、配線幅0.3mm、セラミック厚0.3mmにおけ
る前記製品のビア接続性をテストしたところ、1000
0回の試験で接続不良の発生数は0であった。Next, the manufacturing method will be described. Ceramic powder for the ceramic substrate 1 (average particle size 0.1 to 0.1
Polyvinyl butyral resin was mixed with a solvent (toluene) in a ball mill, and a ceramic green sheet was prepared by a doctor blade method. This was cut into a desired shape, and a via hole for obtaining conduction between layers was formed using a punching die. And
First, the material of the inner via conductor 4a was filled in the via, and the material of the surface layer via conductor 4b was further filled thereon by the printing method, and if necessary, the internal wiring (Ag 100% or the like) was formed by the screen printing method. Next, after the required number of ceramic green sheets were thermocompression bonded, they were fired at the ceramic sintering temperature (900 ° C.). The surface conductor 2 material containing glass frit is formed on the obtained sintered ceramic plate so as to be bonded to the via surface, and if necessary, resistors and the like are formed, and thereafter the sintering temperature of the surface conductor (900 Sintered at (° C) to obtain a ceramic circuit board. Via diameter 0.25m
m, wiring width 0.3 mm, and ceramic thickness 0.3 mm, the via connectivity of the product was tested.
The number of occurrences of poor connection was 0 in the test 0 times.
【0013】実施例2 セラミック基板1用の材料としては実施例1と同じもの
を用い、表層ビア導体4b材料としては粒径0.5μm
のCu粉にAl2O3粉体10%添加したものを用い、内
部ビア導体4a材料としては、粒径3μmのCu粉を用
い900℃で焼成した。表層ビア導体の空隙率は上記手
段に相当し、15%であった。得られた焼成セラミッ
ク板上に、Cu粉にPbO−SiO2−B2O3−CdO
系ガラスフリットを10wt%含有させた表面導体2材
料をビア表面と接合するように形成し、又、必要に応じ
て抵抗体等も形成した後に、表面導体の焼結温度900
℃で焼成して、セラミック回路基板を得た。実施例1の
場合と同様に試験をしたところ10000回の試験で接
続不良の発生数は0であった。Example 2 The same material as in Example 1 was used as the material for the ceramic substrate 1, and the grain size was 0.5 μm as the material for the surface layer via conductor 4b.
Cu powder with 10% Al 2 O 3 powder added was used, and Cu powder with a particle size of 3 μm was used as the material of the internal via conductor 4a and fired at 900 ° C. The porosity of the surface layer via conductor corresponds to the above means and was 15%. To the resulting fired ceramic board, PbO-SiO 2 -B 2 O 3 -CdO the Cu powder
A surface conductor 2 material containing 10 wt% of a glass frit is formed so as to be bonded to the via surface, and a resistor and the like are formed if necessary, and then the surface conductor is sintered at a temperature of 900.
The ceramic circuit board was obtained by firing at ° C. When tested in the same manner as in Example 1, the number of occurrences of connection failure was 0 after 10,000 tests.
【0014】実施例3 セラミック基板1用の材料としては96%Al2O3を用
い、内部ビア導体4b材料としてはW粉に粒径10μm
のポリスチレンボールを3wt%添加したものを、表層
ビア導体4a材料としては粒径2μmのW粉を用いた。
必要に応じてWを用いた配線を形成し、1600℃で焼
成した。表層ビア導体は前記の手段に相当し、空隙率
は7%であった。得られた焼成セラミック板上に、W粉
にMgO−SiO2−CaO系ガラスフリットを5wt
%添加したW系の表面導体2材料をビア表面と接合する
ように形成し、又、必要に応じて抵抗体等を形成した後
に、表面導体の焼結温度1600℃で焼成してセラミッ
ク回路基板を得た。実施例1の場合と同様に試験をした
ところ、10000回の試験で接続不良の発生率は0で
あった。Example 3 96% Al 2 O 3 was used as the material for the ceramic substrate 1, W powder was used as the material for the internal via conductor 4b, and the particle size was 10 μm.
3% by weight of the polystyrene ball was used as the surface layer via conductor 4a material, and W powder having a particle diameter of 2 μm was used.
Wirings made of W were formed if necessary and fired at 1600 ° C. The surface layer via conductor corresponded to the above means, and the porosity was 7%. To the resulting fired ceramic board, 5 wt the MgO-SiO 2 -CaO-based glass frit W powder
% W-based surface conductor 2 material added so as to be bonded to the via surface, and after forming a resistor or the like as required, the surface conductor is sintered at a sintering temperature of 1600 ° C. to form a ceramic circuit board. Got When tested in the same manner as in Example 1, the incidence of connection failure was 0 after 10,000 tests.
【0015】比較例1 セラミック基板1用の材料としては、CaO−Al2O3
−SiO2−B2O3系ガラスとα−Al2O3の重量比で
60:40の混合粉を用い、内部導体3、ビア導体
(4,4b,4aのいずれも含む)材料に粒径0.5μ
mのAg粉を用いて配線を形成し、900℃で焼成し
た。表層ビア導体4bの空隙率は3%であった。得られ
た焼成セラミック基板上にAg/Pd(85/15)の
混合物にPbO−SiO2−B2O3系ガラスを5wt%
含有させた材料を表面導体2材料としてビアと接合する
ように形成し、又、必要に応じて抵抗体等を形成した後
に、導面導体の焼結温度900℃で焼成してセラミック
回路基板を得た。実施例1と同様に試験をしたところ、
10000回の試験で接続不良率は23回あった。この
不良箇所を解析した結果、その接続面にガラスフリット
が遍在し接続不良となっていることが判明した。Comparative Example 1 As a material for the ceramic substrate 1, CaO--Al 2 O 3 was used.
-SiO 2 at a weight ratio of -B 2 O 3 based glass and α-Al 2 O 3 with a powder mixture of 60:40, the inner conductor 3, via conductors (4, 4b, includes any 4a) grain material Diameter 0.5μ
Wiring was formed using Ag powder of m and baked at 900 ° C. The porosity of the surface layer via conductor 4b was 3%. 5% by weight of PbO—SiO 2 —B 2 O 3 based glass was added to the mixture of Ag / Pd (85/15) on the obtained fired ceramic substrate.
The contained material is formed as a surface conductor 2 material so as to be bonded to the via, and after forming a resistor or the like as necessary, the conductor surface conductor is fired at a sintering temperature of 900 ° C. to form a ceramic circuit board. Obtained. When tested in the same manner as in Example 1,
The connection failure rate was 23 times in the test of 10,000 times. As a result of analyzing this defective portion, it was found that glass frit was omnipresent on the connection surface and the connection was defective.
【0016】[0016]
【発明の効果】本発明は、ビア導体と表面導体との接続
の信頼性の高いセラミック回路基板を提供することがで
きる。The present invention can provide a ceramic circuit board with a highly reliable connection between a via conductor and a surface conductor.
【図1】本発明の実施例の構成を示す説明図である。FIG. 1 is an explanatory diagram showing a configuration of an embodiment of the present invention.
【図2】本発明のビア導体と表面導体との接合部の拡大
説明図である。FIG. 2 is an enlarged explanatory view of a joint portion between a via conductor and a surface conductor of the present invention.
1 セラミック基板 2 表面導体 3 内部導体 4 ビア導体 4a 内部ビア導体 4b 表層ビア導体 5 ビア 6 ビア 1 Ceramic Substrate 2 Surface Conductor 3 Internal Conductor 4 Via Conductor 4a Internal Via Conductor 4b Surface Layer Via Conductor 5 Via 6 Via
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/40 7511−4E H05K 3/40 Z ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H05K 3/40 7511-4E H05K 3/40 Z
Claims (5)
配したセラミック回路基板において、ビア導体と表面導
体とを接合するため、セラミック基板内に形成するビア
導体が前記表面導体との接合面において空隙率5%以上
の表層ビア導体に表面導体が接合されたものであること
を特徴とするセラミック回路基板。1. A ceramic circuit board in which at least a via and a metal conductor are arranged on the surface, so that the via conductor and the surface conductor are joined, the via conductor formed in the ceramic substrate has a porosity at a joint surface with the surface conductor. A ceramic circuit board, wherein surface conductors are bonded to 5% or more surface layer via conductors.
トにより形成されたものである請求項1記載のセラミッ
ク回路基板。2. The ceramic circuit board according to claim 1, wherein the surface conductor is formed of a metal conductor material and glass frit.
た低温焼成セラミックである請求項1記載のセラミック
回路基板。3. The ceramic circuit board according to claim 1, wherein the ceramic is a low temperature fired ceramic fired at 1000 ° C. or lower.
し、該ビア内に少なくとも露出部近傍が焼成後に空隙率
5%以上にするための表層ビア導体材料を配置し、同時
焼成した後、ビアを中心とした表面所定部位に、金属粉
末を主成分とし、これにガラスフリットとバインダを混
和してなる導体ペーストをもって回路パターンを印刷し
焼成することによって表面導体を形成することを特徴と
するセラミック回路基板の製造方法。4. A via is formed on the surface of a ceramic substrate material, and a surface layer via conductor material for arranging at least the exposed portion in the vicinity of the exposed portion so as to have a porosity of 5% or more after firing is formed, and the via is simultaneously fired. A ceramic characterized in that a surface conductor is formed by printing a circuit pattern on a predetermined portion of the surface centered on a metal powder as a main component and printing a circuit pattern with a conductor paste made by mixing glass frit and a binder with the paste and firing the paste. Circuit board manufacturing method.
クである請求項4記載のセラミック回路基板の製造方
法。5. The method of manufacturing a ceramic circuit board according to claim 4, wherein the ceramic substrate material is a low temperature fired ceramic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6619796A JP3258231B2 (en) | 1996-03-22 | 1996-03-22 | Ceramic circuit board and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6619796A JP3258231B2 (en) | 1996-03-22 | 1996-03-22 | Ceramic circuit board and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09260853A true JPH09260853A (en) | 1997-10-03 |
JP3258231B2 JP3258231B2 (en) | 2002-02-18 |
Family
ID=13308890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6619796A Expired - Lifetime JP3258231B2 (en) | 1996-03-22 | 1996-03-22 | Ceramic circuit board and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3258231B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000064226A1 (en) * | 1999-04-15 | 2000-10-26 | Matsushita Electric Industrial Co., Ltd. | Ceramic circuit board and method of manufacture thereof |
JP2008078622A (en) * | 2006-08-21 | 2008-04-03 | Murata Mfg Co Ltd | Laminated capacitor, circuit board, and circuit module |
JP2016004973A (en) * | 2014-06-19 | 2016-01-12 | 京セラ株式会社 | Wiring board, package and electronic equipment |
JP2016033941A (en) * | 2014-07-31 | 2016-03-10 | 古河電気工業株式会社 | Connection structure and manufacturing method of the same |
-
1996
- 1996-03-22 JP JP6619796A patent/JP3258231B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000064226A1 (en) * | 1999-04-15 | 2000-10-26 | Matsushita Electric Industrial Co., Ltd. | Ceramic circuit board and method of manufacture thereof |
JP2008078622A (en) * | 2006-08-21 | 2008-04-03 | Murata Mfg Co Ltd | Laminated capacitor, circuit board, and circuit module |
JP2016004973A (en) * | 2014-06-19 | 2016-01-12 | 京セラ株式会社 | Wiring board, package and electronic equipment |
JP2016033941A (en) * | 2014-07-31 | 2016-03-10 | 古河電気工業株式会社 | Connection structure and manufacturing method of the same |
Also Published As
Publication number | Publication date |
---|---|
JP3258231B2 (en) | 2002-02-18 |
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