JPH06334351A - Conductor paste and ceramic multilayer interconnection board using same - Google Patents
Conductor paste and ceramic multilayer interconnection board using sameInfo
- Publication number
- JPH06334351A JPH06334351A JP13927893A JP13927893A JPH06334351A JP H06334351 A JPH06334351 A JP H06334351A JP 13927893 A JP13927893 A JP 13927893A JP 13927893 A JP13927893 A JP 13927893A JP H06334351 A JPH06334351 A JP H06334351A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- conductor
- parts
- paste
- organic vehicle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 97
- 239000000919 ceramic Substances 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 24
- 229910052737 gold Inorganic materials 0.000 claims abstract description 24
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 18
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 abstract description 29
- 239000010931 gold Substances 0.000 description 35
- 239000010410 layer Substances 0.000 description 35
- 239000000843 powder Substances 0.000 description 15
- 239000000203 mixture Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、低温焼成セラミックの
多層配線基板に用いる導体ペースト及びそれを用いた低
温焼成多層配線基板に関し、特に表面に金導体を設ける
場合の多層配線基板のヴィア用導体ペースト及び内層配
線用導体ペーストに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor paste used for a low-temperature-fired ceramic multilayer wiring board and a low-temperature-fired multilayer wiring board using the same, and particularly for a via conductor of a multilayer wiring board when a gold conductor is provided on the surface. The present invention relates to a paste and a conductor paste for inner layer wiring.
【0002】[0002]
【従来の技術】電子機器に用いられる配線基板には、高
速化、高密度化などの要求からセラミックの多層配線基
板が使用されるようになってきている。このような多層
配線基板には、層間の導通をとるためにヴィアが形成さ
れる。2. Description of the Related Art As a wiring board used in electronic equipment, a ceramic multilayer wiring board has come to be used due to demands for higher speed and higher density. Vias are formed in such a multilayer wiring board in order to establish conduction between layers.
【0003】このヴィアは、一般的に、セラミックのグ
リーンシートのそれぞれの必要箇所にスルーホールを設
けて導電材を充填したものを、積層、焼成することによ
って形成される。The vias are generally formed by laminating and firing ceramic green sheets each having a through hole at each required location and filled with a conductive material.
【0004】セラミックの多層配線基板には、主として
アルミナが用いられている。このアルミナ基板はその焼
成温度が高いので、配線材料としてもMoやW 等の高融点
の配線材料が用いられている。しかし、近年の高速化、
高密度化等の要求から、導電抵抗の低い Cu 、Ag、Au等
を導体とする低温で焼成できる基板が開発され(例えば
特開昭62-113758 号公報)、その利用が拡大されつつあ
る。Alumina is mainly used for the ceramic multilayer wiring board. Since this alumina substrate has a high firing temperature, a wiring material having a high melting point such as Mo or W is also used as a wiring material. However, in recent years,
Due to the demand for higher density and the like, a substrate which has low conductivity resistance such as Cu, Ag and Au and can be fired at a low temperature has been developed (for example, Japanese Patent Laid-Open No. 62-113758) and its use is expanding.
【0005】この低温焼成セラミック基板の導体として
は、Cu、Ag系の導体、Auなどが用いられる。そのうちAg
導体は、内部配線及びヴィアとしては使用できるが、表
面導体として用いる場合にはマイグレーションによる拡
散、短絡を生じ易いので、表面導体としてはCu、Ag・Pd
、Ag・Pt 、Au等が用いられる。これらCu、Ag・Pd 、Ag・
Pt 、Au等の導体のうち、特に表面に金配線やワイヤボ
ンディング用の金バンド等のAu導体を用いる場合、基板
表面でまず最外層ヴィアと Ag・Pd等の導体とを接続し、
次いでその Ag・Pd等の導体とAu導体とを接続するという
方法がとられていた。As the conductor of this low temperature fired ceramic substrate, Cu, Ag-based conductor, Au or the like is used. Of which Ag
The conductor can be used for internal wiring and vias, but when it is used as a surface conductor, it easily causes diffusion and short circuit due to migration. Therefore, as the surface conductor, Cu, Ag, Pd are used.
, Ag · Pt, Au, etc. are used. Cu, Ag / Pd, Ag /
Of the conductors such as Pt and Au, especially when using Au conductors such as gold wiring and gold bands for wire bonding on the surface, first connect the outermost layer via and the conductor such as AgPd on the substrate surface,
Then, the method of connecting the conductor such as Ag / Pd and the Au conductor was adopted.
【0006】[0006]
【発明が解決しようとする課題】上記したように、内部
にAgを配線材料として用いる低温焼成基板では、表面に
Cu、Ag・Pd 、Auなどの他の金属を接続する必要があるた
め、信頼性の高い接続を得るのが困難であった。特に内
部にAg導体を用い、表面に金導体を形成する場合には、
直接ヴィア上にAuを接続するのではなく、基板表面でAg
・Pd 合金等の導体を介してAuを接続する方法が用いられ
ており、この方法では配線パターンの精密微小化に限界
があり、微小化のためにAg導体のヴィア上に直接Au導体
を形成すると、Agの拡散によりヴィアに空隙を生ずるこ
とがあった。As described above, in the low temperature fired substrate using Ag as the wiring material inside, the surface is not
Since it was necessary to connect other metals such as Cu, Ag / Pd, and Au, it was difficult to obtain a highly reliable connection. Especially when using a Ag conductor inside and forming a gold conductor on the surface,
Instead of connecting Au directly on the via, Ag on the substrate surface
・ A method of connecting Au via a conductor such as a Pd alloy is used.This method has a limit to the precision miniaturization of the wiring pattern, and the Au conductor is directly formed on the via of the Ag conductor for miniaturization. Then, the voids may be generated in the via due to the diffusion of Ag.
【0007】このように、異種の金属の接する部分に
は、金属原子の拡散の速度が異なることによって接続不
良を生じることがある。As described above, in a portion where different kinds of metals come into contact with each other, a connection failure may occur due to a difference in diffusion rate of metal atoms.
【0008】[0008]
【課題を解決するための手段】本発明はこのような問題
がなく、表面のAu導体に直接接続できるヴィア導体を形
成する導体ペーストとして、Agを主成分とする合金と結
晶化ガラス及び有機ビヒクルとよりなる導体ペーストを
提供するものである。The present invention does not have such a problem, and as a conductor paste for forming a via conductor which can be directly connected to an Au conductor on the surface, an alloy containing Ag as a main component, a crystallized glass and an organic vehicle. And a conductor paste comprising
【0009】すなわち、本発明の導体ペーストは、Ag
80〜99重量%とPd、Au、Ptの少なくとも 1種以上の合計
1〜20重量%とからなる金属成分 100重量部、結晶化ガ
ラス0.3〜7 重量部及び有機ビヒクル 8〜50重量部から
なる低温焼成セラミック多層配線基板用導体ペーストで
ある。That is, the conductor paste of the present invention is Ag
80 to 99% by weight and the sum of at least one of Pd, Au and Pt
It is a conductor paste for a low temperature fired ceramic multilayer wiring board, which comprises 100 parts by weight of a metal component consisting of 1 to 20% by weight, 0.3 to 7 parts by weight of crystallized glass and 8 to 50 parts by weight of an organic vehicle.
【0010】上記の導体ペーストは、その目的によって
更に好ましい組成が選択される。A more preferable composition of the above-mentioned conductor paste is selected according to its purpose.
【0011】以下の説明において最外層ヴィア、内層用
ヴィア、内部配線等の用語は図1の模式図(断面図)に
よってその概念が示される。In the following description, terms such as outermost layer via, inner layer via, and internal wiring are conceptually shown in the schematic view (cross-sectional view) of FIG.
【0012】すなわち、最外層1は多層基板の表裏両面
の最外層であり、表面導体2はその該表面に形成され
る。最外層用ヴィア3は、表面導体と内部の導体すなわ
ち内部配線4又は内層用ヴィア5とを接続する最外層に
設けられたヴィアである。最外層に挟まれた内部の層は
全て内層であり、内層面に設けられた配線が内部配線4
であり、内層用ヴィア5はこれらの内部配線を層間で接
続する内層に設けられたヴィアである。That is, the outermost layer 1 is the outermost layer on both the front and back surfaces of the multilayer substrate, and the surface conductor 2 is formed on the surface thereof. The outermost layer via 3 is a via provided in the outermost layer that connects the surface conductor and the inner conductor, that is, the internal wiring 4 or the inner layer via 5. The inner layers sandwiched between the outermost layers are all inner layers, and the wiring provided on the inner layer surface is the inner wiring 4
The inner layer vias 5 are vias provided in the inner layer connecting these internal wirings between layers.
【0013】表面のAu導体と内部の導体を接続する最外
層ヴィア用の導体ペーストとしては、好ましくはAgが80
〜95重量%でPd、Au、Ptの少なくとも 1種以上の合計が
5〜20重量%である金属成分 100重量部に、結晶化ガラ
ス 0.3〜3 重量部及び有機ビヒクル 8〜25重量部を配合
したペーストが用いられる。The conductor paste for the outermost layer via connecting the Au conductor on the surface and the conductor inside is preferably Ag of 80 or less.
~ 95% by weight of the total of at least one of Pd, Au and Pt
A paste prepared by mixing 0.3 to 3 parts by weight of crystallized glass and 8 to 25 parts by weight of an organic vehicle with 100 parts by weight of a metal component of 5 to 20% by weight is used.
【0014】多層基板の内部の配線用ペーストとして
は、好ましくはAgが95〜99重量%で、Pd、Au、Ptの 1種
以上の合計が 1〜5 重量%である金属成分 100重量部
に、結晶化ガラス 2〜7 重量部及び有機ビヒクル15〜50
重量部を配合した導体ペーストが用いられる。The wiring paste for the inside of the multilayer substrate is preferably 100 parts by weight of a metal component containing 95 to 99% by weight of Ag and 1 to 5% by weight of one or more of Pd, Au and Pt in total. , Crystallized glass 2-7 parts by weight and organic vehicle 15-50
A conductor paste containing parts by weight is used.
【0015】さらに、これらの内部の配線間を接続する
内層用のヴィアには、好ましくはAgが95〜99重量%、P
d、Au、Ptの少なくとも 1種以上の合計が 1〜5 重量%
である金属成分 100重量部に、結晶化ガラス 0.3〜3 重
量部及び有機ビヒクル 8〜25重量部を配合した導体ペー
ストが用いられる。Further, the vias for the inner layers connecting these internal wirings preferably contain 95 to 99% by weight of Ag and P
1 to 5% by weight of the total of at least one of d, Au, and Pt
A conductive paste prepared by mixing 0.3 to 3 parts by weight of crystallized glass and 8 to 25 parts by weight of an organic vehicle with 100 parts by weight of the metal component is used.
【0016】以下、本発明の詳細について説明する。表
面のAuと接するヴィア導体は、AgのほかにPd、Au、Ptの
1種以上を 5重量%以上含むことが好ましい。これより
少ない組成では、Auと接する部分に導通不良が生じる可
能性がある。20重量%より多い配合では、内部導体との
接続が悪くなる。The details of the present invention will be described below. The via conductor that contacts Au on the surface is made of Pd, Au, and Pt in addition to Ag.
It is preferable to contain one or more kinds in an amount of 5% by weight or more. If the composition is less than this, poor conduction may occur at the portion in contact with Au. If it is more than 20% by weight, the connection with the inner conductor will be poor.
【0017】すなわち、内部導体としてはシート抵抗が
低いことが要求され、上記のヴィア導体との接続をよく
するための異種金属の添加はシート抵抗を上昇せしめる
ので、内部配線及びそれを各層間で接続する内層ヴィア
導体としては、Ag以外の金属成分の比率は 5重量%以
下、 1〜5 重量%が好ましい。これより少ない場合は、
表面用のヴィア導体との接続が悪くなり、多い場合は、
シート抵抗が高くなる。That is, the internal conductor is required to have a low sheet resistance, and the addition of the dissimilar metal for improving the connection with the via conductor increases the sheet resistance, so that the internal wiring and the interlayer wiring between the layers are not provided. As the inner layer via conductor to be connected, the ratio of metal components other than Ag is 5% by weight or less, preferably 1 to 5% by weight. If less than this,
If the connection with the via conductor for the surface is bad and there are many,
High sheet resistance.
【0018】従って、この内層導体と良好な接続をとる
には、前記最外層のヴィア導体のPd、Au、Ptの合計量は
20%以下が好ましい。また、内部配線を各層間で接続す
る内層ヴィア導体は、その金属組成が内部配線に近いこ
とが望ましい。Therefore, in order to make a good connection with this inner layer conductor, the total amount of Pd, Au and Pt of the via conductor of the outermost layer is
20% or less is preferable. Further, it is desirable that the metal composition of the inner layer via conductor that connects the internal wiring between the layers be close to that of the internal wiring.
【0019】本発明の導体ペーストに用いられる各金属
粉末は市販のものが用いいられるが、その好ましい粒径
としては、Ag粉末は0.5 〜2 μm 、Pd粉末は 0.2〜1 μ
m 、Pt粉末は 0.1〜1.5 μm 、Au粉末は 0.2〜1.5 μm
である。Commercially available metal powders are used for the conductor paste of the present invention, and the preferable particle size is 0.5 to 2 μm for Ag powder and 0.2 to 1 μm for Pd powder.
m, Pt powder 0.1-1.5 μm, Au powder 0.2-1.5 μm
Is.
【0020】粉末の形状としては、なるべく球形に近い
ことが好ましい。球形であれば粉末の吸油量が小さいた
めペーストにし易く、固形分や粘度の調整が容易であ
る。The shape of the powder is preferably as close to spherical as possible. If it is spherical, the oil absorption of the powder is small, so it is easy to form a paste, and the solid content and viscosity are easy to adjust.
【0021】導体ペースト成分のガラスは、 850℃の焼
成で結晶化するものが好ましい。再焼成による軟化がな
く、基板との密着性に優れるからである。また、結晶化
するガラスを用いると、焼成時にアルミナ等のセッター
に付着しにくく、セッターの汚染を防ぎ、セッターの再
利用が可能である。The glass of the conductor paste component is preferably one that crystallizes by firing at 850 ° C. This is because there is no softening due to re-baking and the adhesiveness with the substrate is excellent. Further, when glass that crystallizes is used, it hardly adheres to a setter such as alumina during firing, contamination of the setter is prevented, and the setter can be reused.
【0022】ヴィア導体用ペーストに配合される結晶化
ガラスの量は金属成分 100重量部に対して 0.3〜3 重量
部である。 0.3重量部未満では、アルミナ等焼成時に用
いるセッターに付着するおそれがあり、また、内部のヴ
ィア導体と基板との密着性が不良となって、空隙を生じ
ることがある。 3重量部より多く配合では、ヴィア導体
の周辺にクラックを生じることがある。The amount of crystallized glass blended in the via conductor paste is 0.3 to 3 parts by weight based on 100 parts by weight of the metal component. If it is less than 0.3 parts by weight, alumina or the like may adhere to the setter used during firing, and the adhesion between the internal via conductor and the substrate may be poor, resulting in voids. If the amount is more than 3 parts by weight, cracks may occur around the via conductor.
【0023】ただし、内部配線ペーストに加える結晶化
ガラスの量は、ヴィア用の導体に比べて多い方がよい。
すなわち、金属成分 100重量部に対して 2重量部以下の
場合には基板にそりを生じることがあるからである。逆
に多いとシート抵抗が高くなる。よって、2 〜7 重量部
が好ましい。However, the amount of crystallized glass added to the internal wiring paste should be larger than that of the via conductor.
That is, when the amount of the metal component is 2 parts by weight or less relative to 100 parts by weight, the substrate may warp. On the contrary, if the amount is large, the sheet resistance becomes high. Therefore, 2 to 7 parts by weight is preferable.
【0024】有機ビヒクルは、ペースト化でき、充填で
きるような粘度特性が得られるものならば任意であり、
例えばエチルセルローズ、メタクリレート樹脂などを高
沸点の溶剤、例えばテルビネオール、ブチルカルビトー
ル、ジブチルフタレートなどに10〜20重量%溶解したも
のが使用できる。The organic vehicle is optional as long as it can be made into a paste and has viscosity characteristics such that it can be filled.
For example, a solution obtained by dissolving 10 to 20% by weight of ethyl cellulose, a methacrylate resin or the like in a high boiling point solvent such as terbineol, butyl carbitol or dibutyl phthalate can be used.
【0025】有機ビヒクルの配合量は 8重量部以上あれ
ばペースト化できる。しかし、25%以上の場合には充填
後乾燥したときに空洞を生じるおそれがあるので、ヴィ
ア用ペーストとしては 8〜25重量部の範囲が好ましい。If the amount of the organic vehicle is 8 parts by weight or more, it can be made into a paste. However, when the content is 25% or more, voids may occur when the composition is filled and dried, so that the content of the via paste is preferably 8 to 25 parts by weight.
【0026】ただし、内部配線用のペーストとしてはヴ
ィア用のような制約はないので、有機ビヒクルは、スク
リーン印刷可能なペースト粘度を持たせられる量であれ
ばよく、また印刷後に適当な膜厚になればよいので、そ
の配合は15〜50重量部の範囲が採用できる。However, since the paste for the internal wiring is not limited to that for vias, the organic vehicle may be of any amount as long as it has a screen-printable paste viscosity, and has an appropriate film thickness after printing. Therefore, the blending amount can be in the range of 15 to 50 parts by weight.
【0027】本発明の導体ペーストには、必要に応じて
分散剤や粘度調整剤などを加えることができる。If desired, a dispersant, a viscosity modifier, etc. can be added to the conductor paste of the present invention.
【0028】[0028]
【作用】本発明の導体ペーストとして、表面のAu導体と
内部の導体を接続する最外層のヴィア用導体ペーストの
金属成分として、Agが80〜95重量%でPd、Au、Ptの少な
くとも 1種以上の合計が 5〜20重量%である金属成分を
用いることにより、ヴィア導体と表面のAu導体が接した
場合に、ヴィア用の導体中のPd、Au、Ptが、ヴィア中の
金属原子の移動速度、及び、Auと接して合金化した部分
での移動速度を遅くすることができ、ヴィア導体の周辺
の空洞の発生をおさえ、ヴィアと表面のAuとの接続を確
実なものとすることができる。[Function] As the conductor paste of the present invention, as the metal component of the outermost via conductor paste for connecting the Au conductor on the surface and the inner conductor, Ag is 80 to 95% by weight and at least one of Pd, Au and Pt is selected. By using the metal components whose total amount is 5 to 20% by weight, when the via conductor and the surface Au conductor are in contact, Pd, Au, and Pt in the via conductor are The moving speed and the moving speed in the alloyed part in contact with Au can be slowed down, the generation of the cavity around the via conductor can be suppressed, and the connection between the via and the surface Au can be ensured. You can
【0029】また、このような最外層ヴィア導体を採用
したときに発生する内部導体との接続不良も、内部配線
及び内層ヴィア導体用の導体ペーストを選択することに
より解消することができる。Further, the connection failure with the internal conductor which occurs when such outermost layer via conductor is adopted can be eliminated by selecting the conductor paste for the internal wiring and the internal layer via conductor.
【0030】[0030]
【実施例】以下の実施例及び比較例における導体ペース
トの原材料及びペーストの調製は次のとおりである。EXAMPLES The raw materials for the conductor paste and the preparation of the paste in the following examples and comparative examples are as follows.
【0031】(金属粉末) Ag粉末:三井金属鉱業製、粒径が約 1μm の球形に近い
粉末。 Pd粉末:住友金属鉱山製、粒径約 0.5μm のほぼ球形の
もの。 Pt粉末:田中貴金属工業製、粒径約 1μm のもの。 Au粉末:田中貴金属インターナショナル製、粒径約 1μ
m 。(Metal powder) Ag powder: A powder made by Mitsui Mining & Smelting Co., Ltd., having a particle size of about 1 μm and having a nearly spherical shape. Pd powder: made by Sumitomo Metal Mining Co., Ltd., approximately spherical with a particle size of about 0.5 μm. Pt powder: made by Tanaka Kikinzoku Kogyo Co., Ltd., with a particle size of about 1 μm. Au powder: made by Tanaka Kikinzoku International, particle size of about 1μ
m.
【0032】(結晶化ガラス)SiO2: 33%、Al2O3:18
%、B2O3:2%、ZnO:17%、CaO:17%、TiO2: 13%の組成
のガラスを用いた。(Crystalline glass) SiO2: 33%, Al2O3: 18
%, B2O3: 2%, ZnO: 17%, CaO: 17%, TiO2: 13%.
【0033】(有機ビヒクル)最外層ヴィア導体及び内
層ヴィア導体に用いられるペーストに配合される有機ビ
ヒクルは、エチルセルローズを15%ジブチルフタレート
に溶解したものを金属成分 100重量部に対して15重量部
配合した。また、内部配線用導体ペーストには、有機ビ
ヒクルとしてエチルセルローズを15%テルビネオールに
溶解したものを金属成分 100重量部に対して35重量部配
合した。(Organic Vehicle) The organic vehicle mixed in the paste used for the outermost via conductor and the inner via conductor is 15 parts by weight of 100 parts by weight of a metal component prepared by dissolving ethyl cellulose in 15% dibutyl phthalate. Compounded. In the conductor paste for internal wiring, 35 parts by weight of ethyl cellulose as an organic vehicle dissolved in 15% terbineol was mixed with 100 parts by weight of the metal component.
【0034】(ペーストの調製)金属粉末、結晶化ガラ
ス、有機ビヒクルを所定量混合した後、三本ロールミル
を通過させることによって調製した。(Preparation of Paste) A predetermined amount of metal powder, crystallized glass, and organic vehicle were mixed and then passed through a three-roll mill.
【0035】(グリーンシート)セラミックのグリーン
シートは、アルミナ粉末50重量部とホウケイ酸亜鉛ガラ
ス50重量部を混合したものに、有機バインダーとしてア
クリル樹脂を10重量部加え、スラリー化したものをドク
タブレード法により、厚さ約 0.2mmのシート状に成形し
た。(Green Sheet) A ceramic green sheet is a mixture of 50 parts by weight of alumina powder and 50 parts by weight of zinc borosilicate glass, 10 parts by weight of an acrylic resin as an organic binder, and a slurry to form a doctor blade. By the method, it was formed into a sheet with a thickness of about 0.2 mm.
【0036】(多層基板)このグリーンシートにそれぞ
れの所定位置にNCパンチングにより、0.15mmのヴィア用
のスルーホールをあけ、それぞれのグリーンシートのス
ルーホールに、所定のヴィア用ペーストを印刷により充
填し、さらにその上に所定の内部配線パターンを印刷し
た。(Multilayer Substrate) 0.15 mm via holes for vias are made in each green sheet at each predetermined position by NC punching, and the through holes of each green sheet are filled with a predetermined via paste by printing. Further, a predetermined internal wiring pattern was printed on it.
【0037】各グリーンシートを積層し、熱圧着後、 4
00℃で脱バインダーし、 859℃で焼成した。After stacking each green sheet and thermocompression bonding, 4
It was debindered at 00 ° C and calcined at 859 ° C.
【0038】得られた多層基板の表面の所定部に市販の
Au導体ペースト(エヌイーケムキャットのAuペースト)
を印刷し、 850℃で焼成した。A commercially available product is provided on a predetermined portion of the surface of the obtained multilayer substrate.
Au conductor paste (Nuchem Cat's Au paste)
Was printed and baked at 850 ° C.
【0039】(評価方法)以下の各実施例及び比較例に
おける各種の測定は以下の方法によった。(Evaluation Method) Various measurements in the following Examples and Comparative Examples were carried out by the following methods.
【0040】導通:図2に示すようなパターンの基板を
作製し、テスターにてA−B間及びC−D間の導通を調
べた。1基板に表裏それぞれ96箇所の接続部があり、各
実施例ごとに50基板を作製し、それぞれ合計9600箇所の
導通を調べた。Continuity: A substrate having a pattern as shown in FIG. 2 was prepared, and the continuity between A and B and between C and D was examined with a tester. There were 96 connecting portions on each of the front and back sides of one substrate, 50 substrates were prepared for each example, and the conduction at 9600 places in total was examined.
【0041】セッターへの付着:アルミナセッターを拡
大鏡で観察した。Adhesion to setter: The alumina setter was observed with a magnifying glass.
【0042】クラック:基板をエポキシ樹脂に包埋した
後、研磨して顕微鏡にて観察した。Crack: After embedding the substrate in epoxy resin, polishing and observing with a microscope.
【0043】シート抵抗:内部に 0.2mm×20mmの配線を
形成し、ヴィア導体で表面に引き出した試料を用い、4
端子法で測定した。Sheet resistance: 0.2 mm × 20 mm wiring was formed inside, and a sample drawn out on the surface with a via conductor was used.
It was measured by the terminal method.
【0044】実施例1〜7、比較例1〜3 図2に示す多層基板において、内部配線導体に後記実施
例11のペーストを用い、内層用ヴィアとして後記実施
例21の導体ペーストを用い、最外層ヴィア導体ペース
トの組成を表1に示す各組成として多層基板を作成し、
その導通を測定した。結果を表1に示す。Examples 1 to 7 and Comparative Examples 1 to 3 In the multilayer substrate shown in FIG. 2, the paste of Example 11 described below was used as the internal wiring conductor, and the conductor paste of Example 21 described below was used as the via for the inner layer. The composition of the outer layer via conductor paste is made into each composition shown in Table 1, and a multi-layer substrate is prepared.
The continuity was measured. The results are shown in Table 1.
【0045】[0045]
【表1】 [Table 1]
【0046】比較例1及び2における導通不良は、断面
観察の結果、表面導体とヴィア導体の界面付近で空洞が
生じていた。また、比較例3では表面導体との接続は良
好であったが、内部配線導体との接続部の一部に空隙が
見られた。Regarding the poor conduction in Comparative Examples 1 and 2, as a result of observing the cross section, a cavity was formed near the interface between the surface conductor and the via conductor. Further, in Comparative Example 3, the connection with the surface conductor was good, but a void was observed in a part of the connection portion with the internal wiring conductor.
【0047】実施例8、9及び比較例4、5 実施例6のペーストにおいて、ガラス配合量を表2に示
すように変え、得られた多層基板の導通を測定した。結
果は表2に示す。この結果より、ヴィア用のペーストに
加えるガラスの量は金属成分 100重量部に対して 0.3〜
3 重量部あればよいことがわかる。In the pastes of Examples 8 and 9 and Comparative Examples 4 and 5, the glass compounding amount was changed as shown in Table 2, and the conductivity of the obtained multilayer substrate was measured. The results are shown in Table 2. From this result, the amount of glass added to the paste for vial is 0.3 to 100 parts by weight of the metal component.
It turns out that 3 parts by weight is enough.
【0048】[0048]
【表2】 [Table 2]
【0049】実施例10〜16、比較例6 実施例6の多層基板において、内部配線導体の金属成分
組成を表2の組成として多層基板を作成し、その内部配
線のシート抵抗及び導通を測定した。結果を表3に示
す。比較例6ではヴィアと内部配線との接続部で不良を
生じている。これに対し実施例では接続不良は発生して
いない。Examples 10 to 16 and Comparative Example 6 In the multilayer substrate of Example 6, a multilayer substrate was prepared with the metal component composition of the internal wiring conductors as shown in Table 2, and the sheet resistance and conduction of the internal wirings were measured. . The results are shown in Table 3. In Comparative Example 6, there is a defect at the connection between the via and the internal wiring. On the other hand, in the embodiment, no connection failure has occurred.
【0050】[0050]
【表3】 [Table 3]
【0051】実施例17〜19、比較例7、8 実施例6の多層基板において、内部配線導体ペーストの
ガラス配合量を表4に示すように変更し、得られた多層
基板について内部配線のシート抵抗を測定した。結果は
表4に示す。Examples 17 to 19 and Comparative Examples 7 and 8 In the multilayer substrates of Example 6, the glass compounding amount of the internal wiring conductor paste was changed as shown in Table 4, and the obtained multilayer substrate was subjected to internal wiring sheets. The resistance was measured. The results are shown in Table 4.
【0052】[0052]
【表4】 [Table 4]
【0053】ガラス配合量が 2重量部より少ない場合に
は基板のそりが大きかった。また、7重量部より多い場
合にはシート抵抗が大きかった。When the glass content was less than 2 parts by weight, the warpage of the substrate was large. Further, when it was more than 7 parts by weight, the sheet resistance was large.
【0054】実施例20〜25 実施例6の多層基板において、内層用ヴィア導体ペース
トとして表5に示す組成ものを用い、導通を測定した。
結果は表5に示す。Examples 20 to 25 In the multilayer substrate of Example 6, the via conductor paste for the inner layer having the composition shown in Table 5 was used to measure conduction.
The results are shown in Table 5.
【0055】[0055]
【表5】 [Table 5]
【0056】導通不良は全く認められず、内部配線導体
と組成を近くすることによって良好な結果が得られてい
る。No conduction failure was observed, and good results were obtained by making the composition close to that of the internal wiring conductor.
【0057】[0057]
【発明の効果】本発明の導体用ペーストは、セラミック
多層基板の最外層のヴィア導体に用いて表面のAu導体と
の直接の接続が可能であり、その接続は信頼性が高く、
配線パターンの微小化が可能となる。また、そのペース
ト組成を選択することにより、内部配線用及び内層ヴィ
ア導体用として相互に良好な接続を得ることができる。INDUSTRIAL APPLICABILITY The conductor paste of the present invention can be used as a via conductor of the outermost layer of a ceramic multilayer substrate and can be directly connected to an Au conductor on the surface, and the connection is highly reliable.
The wiring pattern can be miniaturized. Further, by selecting the paste composition, it is possible to obtain good mutual connection for the internal wiring and the internal via conductor.
【図面の簡単な説明】[Brief description of drawings]
【図1】本発明のセラミック多層配線基板の模式断面
図。FIG. 1 is a schematic cross-sectional view of a ceramic multilayer wiring board of the present invention.
【図2】本発明の実施例での導通評価用基板の断面図。FIG. 2 is a cross-sectional view of a continuity evaluation substrate in an example of the present invention.
1 最外層 2 表面導体 3 最外層用ヴィア 4 内部配線 5 内層用ヴィア A、B、C、D 端子 1 Outermost layer 2 Surface conductor 3 Outermost layer via 4 Internal wiring 5 Inner layer via A, B, C, D terminals
Claims (5)
とも 1種以上の合計1〜20重量%とからなる金属成分 10
0重量部、結晶化ガラス 0.3〜7 重量部及び有機ビヒク
ル 8〜50重量部からなる低温焼成セラミック多層配線基
板用導体ペースト。1. A metal component comprising 80 to 99% by weight of Ag and a total of 1 to 20% by weight of at least one of Pd, Au and Pt.
A conductor paste for a low temperature fired ceramic multilayer wiring board, which comprises 0 parts by weight, 0.3 to 7 parts by weight of crystallized glass, and 8 to 50 parts by weight of an organic vehicle.
とも 1種以上の合計5〜20重量%とからなる金属成分 10
0重量部、結晶化ガラス 0.3〜3 重量部及び有機ビヒク
ル 8〜25重量部からなる低温焼成セラミック多層配線基
板の表面Au導体と接続する最外層ヴィア用導体ペース
ト。2. A metal component comprising 80 to 95% by weight of Ag and 5 to 20% by weight of at least one of Pd, Au and Pt in total.
A conductor paste for the outermost layer via that is connected to the surface Au conductor of the low temperature fired ceramic multilayer wiring board, which is composed of 0 part by weight, 0.3 to 3 parts by weight of crystallized glass, and 8 to 25 parts by weight of organic vehicle.
とも 1種以上の合計1〜5 重量%とからなる金属成分 10
0重量部、結晶化ガラス 2〜7 重量部及び有機ビヒクル1
5〜50重量部からなる低温焼成セラミック多層配線基板
の内部配線用導体ペースト。3. A metal component comprising 95 to 99% by weight of Ag and a total of 1 to 5% by weight of at least one of Pd, Au and Pt.
0 parts by weight, crystallized glass 2-7 parts by weight and organic vehicle 1
Conductor paste for internal wiring of low temperature fired ceramic multilayer wiring board consisting of 5 to 50 parts by weight.
とも 1種以上の合計1〜5 重量%とからなる金属成分 10
0重量部、結晶化ガラス 0.3〜3 重量部及び有機ビヒク
ル 8〜25重量部からなる低温焼成セラミック多層配線基
板の内層ヴィア用導体ペースト。4. A metal component comprising 95 to 99% by weight of Ag and a total of 1 to 5% by weight of at least one of Pd, Au and Pt.
Conductor paste for inner layer vias of low-temperature fired ceramic multilayer wiring boards consisting of 0 part by weight, 0.3 to 3 parts by weight of crystallized glass and 8 to 25 parts by weight of organic vehicle.
線基板において、Ag80〜95重量%とPd、Au、Ptの少なく
とも 1種以上の合計 5〜20重量%とからなる金属成分 1
00重量部、結晶化ガラス 0.3〜3 重量部及び有機ビヒク
ル 8〜25重量部からなる導体ペーストを最外層のヴィア
に、 Ag 95 〜99重量%、Pd、Au、Ptの少なくとも 1種以上の
合計 1〜5 重量%とからなる金属成分 100重量部、結晶
化ガラス 2〜7 重量部及び有機ビヒクル15〜50重量部か
らなる導体ペーストを内部の配線に、 Ag 95〜99重量%、Pd、Au、Ptの少なくとも 1種以上の
合計 1〜5 重量%とからなる金属成分 100重量部、結晶
化ガラス 0.3〜3 重量部及び有機ビヒクル 8〜25重量部
からなる導体ペーストを内層のヴィアに用いたことを特
徴とする低温焼成セラミック多層配線基板。5. A ceramic multilayer wiring board having an Au conductor on the surface thereof, comprising a metal component of 80 to 95 wt% Ag and a total of 5 to 20 wt% of at least one of Pd, Au and Pt.
00 parts by weight, 0.3 to 3 parts by weight of crystallized glass, and 8 to 25 parts by weight of organic vehicle are used as the outermost via, and the total of at least one of Ag 95 to 99% by weight, Pd, Au, and Pt. Conductive paste consisting of 100 parts by weight of a metal component consisting of 1 to 5% by weight, 2 to 7 parts by weight of crystallized glass and 15 to 50 parts by weight of an organic vehicle is used for the internal wiring, and 95 to 99% by weight of Ag, Pd and Au are used. , A conductor paste consisting of 100 parts by weight of a metal component consisting of at least one or more of Pt and a total of 1 to 5% by weight, 0.3 to 3 parts by weight of crystallized glass, and 8 to 25 parts by weight of an organic vehicle was used for the inner layer via. A low temperature fired ceramic multilayer wiring board characterized by the above.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13927893A JPH06334351A (en) | 1993-05-19 | 1993-05-19 | Conductor paste and ceramic multilayer interconnection board using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13927893A JPH06334351A (en) | 1993-05-19 | 1993-05-19 | Conductor paste and ceramic multilayer interconnection board using same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06334351A true JPH06334351A (en) | 1994-12-02 |
Family
ID=15241566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13927893A Pending JPH06334351A (en) | 1993-05-19 | 1993-05-19 | Conductor paste and ceramic multilayer interconnection board using same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06334351A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007158027A (en) * | 2005-12-05 | 2007-06-21 | Asahi Glass Co Ltd | Ceramic substrate with conductor layer, and method of manufacturing same |
WO2007083710A1 (en) * | 2006-01-20 | 2007-07-26 | Sumitomo Electric Industries, Ltd. | Conductive paste and wiring board using same |
EP1981320A1 (en) * | 2006-01-23 | 2008-10-15 | Hitachi Metals Precision, Ltd. | Conductive paste, multilayer ceramic substrate and method for manufacturing multilayer ceramic substrate |
JP2010232343A (en) * | 2009-03-26 | 2010-10-14 | Murata Mfg Co Ltd | Electronic component and manufacturing method thereof |
JP2012104521A (en) * | 2010-11-05 | 2012-05-31 | Fujitsu Ltd | Method of manufacturing circuit board |
WO2015076121A1 (en) * | 2013-11-20 | 2015-05-28 | 株式会社村田製作所 | Multilayer wiring substrate and probe card provided therewith |
-
1993
- 1993-05-19 JP JP13927893A patent/JPH06334351A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007158027A (en) * | 2005-12-05 | 2007-06-21 | Asahi Glass Co Ltd | Ceramic substrate with conductor layer, and method of manufacturing same |
JP4702021B2 (en) * | 2005-12-05 | 2011-06-15 | 旭硝子株式会社 | Ceramic substrate with conductor layer and method for producing the same |
WO2007083710A1 (en) * | 2006-01-20 | 2007-07-26 | Sumitomo Electric Industries, Ltd. | Conductive paste and wiring board using same |
US8053066B2 (en) | 2006-01-20 | 2011-11-08 | Sumitomo Electric Industries, Ltd. | Conductive paste and wiring board using same |
EP1981320A1 (en) * | 2006-01-23 | 2008-10-15 | Hitachi Metals Precision, Ltd. | Conductive paste, multilayer ceramic substrate and method for manufacturing multilayer ceramic substrate |
EP1981320A4 (en) * | 2006-01-23 | 2011-03-02 | Hitachi Metals Ltd | CONDUCTIVE PASTE, MULTILAYER CERAMIC SUBSTRATE AND METHOD FOR PRODUCING A MULTILAYER CERAMIC SUBSTRATE |
US8501299B2 (en) | 2006-01-23 | 2013-08-06 | Hitachi Metals, Ltd. | Conductive paste, multilayer ceramic substrate and its production method |
JP2010232343A (en) * | 2009-03-26 | 2010-10-14 | Murata Mfg Co Ltd | Electronic component and manufacturing method thereof |
JP2012104521A (en) * | 2010-11-05 | 2012-05-31 | Fujitsu Ltd | Method of manufacturing circuit board |
WO2015076121A1 (en) * | 2013-11-20 | 2015-05-28 | 株式会社村田製作所 | Multilayer wiring substrate and probe card provided therewith |
US10231331B2 (en) | 2013-11-20 | 2019-03-12 | Murata Manufacturing Co., Ltd. | Multilayer wiring board and probe card having the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2002226259A (en) | Composition for substrate of ceramic electronic parts, ceramic electronic parts and method for manufacturing laminated type ceramic electronic parts | |
JP3528037B2 (en) | Manufacturing method of glass ceramic substrate | |
KR20100021663A (en) | Insulation paste for a metal core substrate and electronic device | |
JP3517062B2 (en) | Copper metallized composition and glass-ceramic wiring board using the same | |
JPH06334351A (en) | Conductor paste and ceramic multilayer interconnection board using same | |
JP4038602B2 (en) | Conductive paste and ceramic multilayer substrate | |
JP3538549B2 (en) | Wiring board and method of manufacturing the same | |
JP4528502B2 (en) | Wiring board | |
JP2002043758A (en) | Multilayer board and manufacturing method | |
KR100744855B1 (en) | High Thermal Cycle Conductor System | |
JP3098288B2 (en) | Conductor composition and ceramic substrate using the same | |
JP3369633B2 (en) | Conductive paste and ceramic multilayer wiring board using the same | |
JPH0685466A (en) | Multilayer circuit board | |
JPH06342965A (en) | Ceramic circuit board and manufacture thereof | |
JP4646362B2 (en) | Conductor composition and wiring board using the same | |
JPH04329691A (en) | Conductor paste and wiring board | |
JPH11284296A (en) | Wiring board | |
JP3790361B2 (en) | Conductive paste composition and ceramic wiring board using the same | |
JPH11186727A (en) | Wiring board and method of manufacturing the same | |
JPH06302968A (en) | Multilayer interconnection ceramic board | |
JP4022102B2 (en) | Multilayer wiring board | |
JP3130914B2 (en) | Multilayer circuit board | |
JP2004273426A (en) | Conductive paste and ceramic multilayer substrate using the same | |
JP2001143527A (en) | Conductive paste and ceramic wiring substrate using the same | |
JP3401147B2 (en) | Low temperature firing porcelain composition |