JPH06103811A - Conductive paste composition - Google Patents
Conductive paste compositionInfo
- Publication number
- JPH06103811A JPH06103811A JP4252596A JP25259692A JPH06103811A JP H06103811 A JPH06103811 A JP H06103811A JP 4252596 A JP4252596 A JP 4252596A JP 25259692 A JP25259692 A JP 25259692A JP H06103811 A JPH06103811 A JP H06103811A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- weight
- via hole
- glass
- via conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 11
- 239000004020 conductor Substances 0.000 claims abstract description 83
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000011230 binding agent Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 14
- 239000011810 insulating material Substances 0.000 claims abstract description 9
- 230000009477 glass transition Effects 0.000 claims description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 14
- 238000010276 construction Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- BTWKHYAGORSWDU-UHFFFAOYSA-N 3,4-dibenzylphthalic acid Chemical compound C=1C=CC=CC=1CC1=C(C(O)=O)C(C(=O)O)=CC=C1CC1=CC=CC=C1 BTWKHYAGORSWDU-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- UCVPKAZCQPRWAY-UHFFFAOYSA-N dibenzyl benzene-1,2-dicarboxylate Chemical compound C=1C=CC=C(C(=O)OCC=2C=CC=CC=2)C=1C(=O)OCC1=CC=CC=C1 UCVPKAZCQPRWAY-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はLSI,ICやチップ部
品を搭載したセラミック多層配線基板の製造に用いられ
る導体ペ−スト組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a conductor paste composition used for manufacturing a ceramic multilayer wiring board on which LSI, IC and chip parts are mounted.
【0002】[0002]
【従来の技術】セラミック多層基板の製造方法として、
グリ−ンシ−ト積層法と厚膜印刷多層法が知られ、広範
に利用されている。グリ−ンシ−ト積層法は高積層、微
細な配線パタ−ンが可能である反面、製造歩留りの悪さ
や配線パタ−ン変更への対応力の弱さといった難点があ
るのに対し、厚膜印刷多層法は工程が簡便で対応力もよ
く、製造歩留りもよい反面、配線パタ−ンによる基板表
面の段差のため、高積層が不可能で微細な配線パタ−ン
に対応できない。これら二者の製造法の長所を取り入れ
た方法として配線パタ−ンを絶縁層中に埋設した構造を
もつ転写シ−トをセラミック基板上に転写、積層する方
法(転写法)が提案される。2. Description of the Related Art As a method of manufacturing a ceramic multilayer substrate,
The green sheet laminating method and the thick film printing multi-layer method are known and widely used. The green sheet stacking method enables high stacking and fine wiring patterns, but on the other hand, it has drawbacks such as poor manufacturing yield and poor ability to respond to changes in wiring patterns, while it is thick film. The printing multi-layer method is simple in process, has good adaptability, and has a good manufacturing yield, but on the other hand, due to a step on the surface of the substrate due to the wiring pattern, it is not possible to highly stack and it is not possible to cope with a fine wiring pattern. As a method that takes advantage of these two manufacturing methods, a method (transfer method) is proposed in which a transfer sheet having a structure in which a wiring pattern is embedded in an insulating layer is transferred and laminated on a ceramic substrate.
【0003】一方,セラミック多層基板の製造技術で重
要なポイントは配線層間を接続する技術で,一般に配線
層間を接続するには,配線上の所定箇所にビア孔と呼ば
れる穴を形成し,ビア孔に導体材料を充填する方法が取
られている。On the other hand, an important point in the technique for manufacturing a ceramic multilayer substrate is a technique for connecting wiring layers. Generally, in order to connect wiring layers, a hole called a via hole is formed at a predetermined position on the wiring. The method of filling the conductor material is used.
【0004】[0004]
【発明が解決しようとする課題】グリ−ンシ−ト積層法
や転写法では絶縁層と導体層を積層一体化した後に同時
焼成するので,ビア孔内部の導体材料とビア孔を形成す
る絶縁材料の焼結のタイミングを精密に合わせないと配
線とビア導体が断線したり,ビア孔内部に空隙が発生し
たりし,接続信頼性が著しく劣化する。In the green sheet laminating method and transfer method, since the insulating layer and the conductor layer are laminated and integrated and then fired simultaneously, the conductor material inside the via hole and the insulating material forming the via hole are formed. If the timing of sintering is not precisely adjusted, the wiring and via conductors will be disconnected, and voids will be generated inside the via holes, resulting in a marked deterioration in connection reliability.
【0005】[0005]
【課題を解決するための手段】前記課題を解決するた
め,本発明はビア用の導体ペ−スト組成物に,導体材料
粉末30.0〜70.0重量%とガラス転移温度が絶縁
材料のガラス転移温度よりも高い温度の結晶化ガラスセ
ラミック粉末30.0〜70.0重量%から成る無機成
分と,少なくとも有機バインダと溶剤より成る有機ビヒ
クル成分を備えた導体ペ−スト組成物を用いるものであ
る。In order to solve the above-mentioned problems, the present invention provides a conductor paste composition for vias containing 30.0 to 70.0% by weight of conductor material powder and an insulating material having a glass transition temperature. What uses a conductor paste composition comprising an inorganic component composed of 30.0 to 70.0% by weight of crystallized glass ceramic powder having a temperature higher than the glass transition temperature and an organic vehicle component composed of at least an organic binder and a solvent Is.
【0006】[0006]
【作用】本発明は、上述したようにビア用の導体に,導
体材料粉末30.0〜70.0重量%とガラス転移温度
が絶縁材料のガラス転移温度よりも高い結晶化ガラスセ
ラミック粉末30.0〜70.0重量%から成る無機成
分と,少なくとも有機バインダと溶剤より成る有機ビヒ
クル成分を備えた導体ペ−スト組成物を用いるので,ビ
ア孔を形成する絶縁材料が焼結しビア孔が形成された後
に,ビア孔内部のビア導体材料中のガラス成分が軟化し
ビア導体が焼結するので,ビア導体部分での断線やビア
孔内部に空隙が発生せず,ビア孔にしっかりと密着した
緻密な構造のビア導体が形成できる。According to the present invention, as described above, in the conductor for vias, 30.0 to 70.0% by weight of the conductor material powder and the crystallized glass ceramic powder 30. whose glass transition temperature is higher than the glass transition temperature of the insulating material. Since the conductor paste composition comprising the inorganic component of 0 to 70.0% by weight and the organic vehicle component of at least the organic binder and the solvent is used, the insulating material forming the via hole is sintered and the via hole is After the formation, the glass component in the via conductor material inside the via hole softens and the via conductor sinters, so there is no disconnection at the via conductor portion or voids inside the via hole, and it firmly adheres to the via hole. A via conductor having a precise structure can be formed.
【0007】[0007]
【実施例】以下本発明の一実施例について,図面を参照
しながら説明する。なお図1(a),(b),(c),
(d)は本発明の一実施例によるセラミック多層配線基
板の製造方法における各工程の温度プロファイルを示す
図である。図2(a),(b)は本発明の一実施例によ
るセラミック多層配線基板のビア断面を示す模式図であ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 (a), (b), (c),
(D) is a diagram showing a temperature profile of each step in the method for manufacturing a ceramic multilayer wiring board according to an embodiment of the present invention. 2 (a) and 2 (b) are schematic views showing a cross section of a via in a ceramic multilayer wiring board according to an embodiment of the present invention.
【0008】(実施例1)ビア用導体ペ−ストの原料と
して、平均粒径が約3ミクロンの銀粉末(福田金属箔粉
社製)を50.0重量%、結晶化ガラスセラミック粉末
(日本電気硝子社製,MLS05,ガラス転移温度67
0℃)を33.4重量%、バインダとしてのエチルセル
ロ−ス系樹脂を0.8重量%、溶剤としてのテルピネオ
−ルを15.8重量%、それぞれ用意し、これらを充分
に3本ロ−ルにて充分に混合・混練してビア用導体ペ−
ストを作製した。Example 1 50.0% by weight of a silver powder (made by Fukuda Metal Foil Powder Co., Ltd.) having an average particle size of about 3 μm and a crystallized glass ceramic powder (Japan Electric Glass Co., MLS05, glass transition temperature 67
(0 ° C.) 33.4% by weight, ethyl cellulose resin as a binder 0.8% by weight, and terpineol as a solvent 15.8% by weight, respectively. Conductor paste for vias by thoroughly mixing and kneading
A strike was made.
【0009】絶縁体ペ−ストの原料として、絶縁体粉末
(アルミナ+ホウケイ酸ガラス粉末)を70重量%、バ
インダとしてブチラ−ル系樹脂+ベンジルブチルフタレ
−トを15重量%、溶剤としてのブチルカルビト−ルを
15重量%を用意し、これらを充分に3本ロ−ルにて充
分に混合・混練して絶縁体ペ−ストを作製した。なおこ
の絶縁体粉末のガラス転移温度は570℃である。Insulating powder (alumina + borosilicate glass powder) is 70% by weight as a raw material for an insulating paste, butyral resin + benzylbenzylphthalate is 15% by weight as a binder, and a solvent is used as a solvent. 15 wt% of butyl carbitol was prepared, and these were sufficiently mixed and kneaded with three rolls to prepare an insulating paste. The glass transition temperature of this insulator powder is 570 ° C.
【0010】表面に離型処理を施したベ−スフィルム
(PET)上に厚膜導体ペ−スト(京都エレックス社
製,DD1411)でスクリ−ン印刷により配線パタ−
ン(導体層2)を形成し、さらに絶縁体ペ−ストで配線
パタ−ン全体を覆うように絶縁層3を形成し、転写シ−
トを作製した。同様の順序で各層の配線パタ−ンを形成
した転写シ−トを作製し、各転写シ−トの所定箇所にビ
ア孔をパンチングによって穿孔した。なおビア孔は炭酸
ガスレ−ザによって穿孔してもよい。次に96%アルミ
ナ基板上に転写シ−トを60℃,80kg/cm2の条
件で熱転写し、作製したビア用導体ペ−ストをビア孔に
充填した後にベ−スフィルムをはがし、同様の順序で転
写シ−トを積層して積層体を得た。A wiring pattern is formed by screen printing with a thick film conductor paste (DD1411, manufactured by Kyoto Elec Co., Ltd.) on a base film (PET) whose surface is subjected to a release treatment.
A conductive layer 2 and then an insulating layer 3 is formed with an insulating paste so as to cover the entire wiring pattern.
Was made. Transfer sheets each having a wiring pattern of each layer formed in the same order were prepared, and via holes were punched at predetermined positions of each transfer sheet. The via holes may be formed by a carbon dioxide gas laser. Next, the transfer sheet was thermally transferred onto a 96% alumina substrate under the conditions of 60 ° C. and 80 kg / cm 2, and the via conductor paste thus prepared was filled into the via hole, and then the base film was peeled off. Then, the transfer sheets were laminated to obtain a laminate.
【0011】次に得られた積層体を加熱炉内の大気中
で、脱バインダ処理した。この際の加熱条件はピ−ク温
度275℃、ピ−ク温度時間360分の図1(a)に示
した温度プロファイルとした。Next, the obtained laminated body was subjected to binder removal treatment in the atmosphere in the heating furnace. The heating conditions at this time were the temperature profile shown in FIG. 1A for a peak temperature of 275 ° C. and a peak temperature time of 360 minutes.
【0012】その後、積層体5を加熱炉内の大気中で焼
結,焼成した。加熱条件はピ−ク温度900℃、ピ−ク
温度保持時間10分の図1(b)に示す温度プロファイ
ルとした。最後に最上部の配線(図示せず)を厚膜導体
ぺ−スト(京都エレックス社製,DD2332H)でス
クリ−ン印刷により形成し、大気中で焼成した。加熱条
件はピ−ク温度900℃、ピ−ク温度保持時間10分の
図1(b)に示す温度プロファイルとした。こうして得
られた多層配線基板のビア孔2は、導体層3との接触部
分での断線やビア孔2内部の空隙等が発生せず、ビア孔
2の内壁にしっかりと密着した緻密な構造のビア導体1
が形成できた。これの体積抵抗は2.7E−4ohm・
cmであった。図2(a)に本実施例で得られたビア導
体1部分の断面を示す。Thereafter, the laminated body 5 was sintered and fired in the atmosphere of the heating furnace. The heating conditions were a peak temperature of 900 ° C. and a temperature profile shown in FIG. Finally, the uppermost wiring (not shown) was formed by screen printing with a thick film conductor paste (DD2332H, manufactured by Kyoto Elex Co., Ltd.) and baked in the atmosphere. The heating conditions were a peak temperature of 900 ° C. and a temperature profile shown in FIG. The via hole 2 of the multilayer wiring board thus obtained has a dense structure that is firmly adhered to the inner wall of the via hole 2 without disconnection at the contact portion with the conductor layer 3 or voids inside the via hole 2. Via conductor 1
Could be formed. The volume resistance of this is 2.7E-4 ohm.
It was cm. FIG. 2A shows a cross section of a portion of the via conductor 1 obtained in this example.
【0013】なお,ビア用導体ペ−スト中の銀とガラス
セラミックの比率を変化させたものを作成して、同様に
多層配線基板を製造した。この時、銀の比率が30重量
%以上含有されていないビア導体ペ−スト(ガラスセラ
ミック成分が多い)を用いたものでは、断面が図2
(a)に示したような構造のビアが形成されたが、ガラ
ス成分が多すぎるために導通が得られなかった。一方、
銀の比率が70重量%を越えるビア導体ペ−スト(銀が
多い)を用いたものでは、断面が図2(b)に示したよ
うな構造のビアとなった。A multi-layer wiring board was manufactured in the same manner by preparing a via conductor paste in which the ratio of silver and glass ceramic was changed. At this time, in the case of using a via conductor paste (which has a large glass ceramic component) in which the proportion of silver is not more than 30% by weight, the cross section is as shown in FIG.
A via having a structure as shown in (a) was formed, but conduction could not be obtained because the glass component was too much. on the other hand,
A via conductor paste having a silver content of more than 70% by weight (mostly silver) was used, and the via had a structure as shown in FIG. 2B.
【0014】(実施例2)ビア用導体ペ−ストの原料と
して、平均粒径が約3ミクロンの酸化銅粉末(京都エレ
ックス社製,CB250粉砕)を50.0重量%、ガラ
ス粉末(日本電気硝子社製,MLS05,ガラス転移温
度670℃)を33.4重量%、バインダとしてのエチ
ルセルロ−ス系樹脂を0.8重量%、溶剤としてのテル
ピネオ−ルを15.8重量%、それぞれ用意し、これら
を充分に3本ロ−ルにて充分に混合・混練してビア用導
体ペ−ストを作製した。(Example 2) As a raw material for a conductor paste for vias, 50.0% by weight of copper oxide powder having an average particle size of about 3 microns (manufactured by Kyoto Elex Co., Ltd., CB250 crushed), glass powder (NEC) Glass, MLS05, glass transition temperature 670 ° C.) 33.4% by weight, ethyl cellulose resin as a binder 0.8% by weight, terpineol as a solvent 15.8% by weight, respectively. Then, these were sufficiently mixed and kneaded with three rolls to prepare a conductor paste for vias.
【0015】導体ペ−ストの原料として、平均粒径が約
3ミクロンの酸化銅粉末(京都エレックス社製,CB2
50粉砕)を85.5重量%、バインダとしてブチラ−
ル系樹脂+ベンジルブチルフタレ−トを11.5重量
%、溶剤としてのブチルカルビト−ルを3重量%を用意
し、これらを充分に3本ロ−ルにて充分に混合・混練し
て配線導体ペ−ストを作製した。As a raw material for the conductor paste, copper oxide powder having an average particle size of about 3 microns (manufactured by Kyoto Elex Co., CB2)
50 crushed) 85.5% by weight, butyra as a binder
Prepare 11.5% by weight of resin and benzyl butyl phthalate, and 3% by weight of butyl carbitol as a solvent, and sufficiently mix and knead them with 3 rolls to make wiring. A conductor paste was produced.
【0016】絶縁体ペ−ストの原料として、(実施例
1)と同様の絶縁体粉末を70重量%、バインダとして
ブチラ−ル系樹脂+ベンジルブチルフタレ−トを15重
量%、溶剤としてのブチルカルビト−ルを15重量%を
用意し、これらを充分に3本ロ−ルにて充分に混合・混
練して絶縁体ペ−ストを作製した。As a raw material for the insulating paste, 70% by weight of the same insulating powder as in (Example 1), 15% by weight of butyral resin + benzyl butyl phthalate as a binder, and as a solvent were used. 15 wt% of butyl carbitol was prepared, and these were sufficiently mixed and kneaded with three rolls to prepare an insulating paste.
【0017】表面に離型処理を施したベ−スフィルム
(PET)上に作製した配線導体ペ−ストでスクリ−ン
印刷により配線パタ−ン(導体層3)を形成し、さらに
絶縁体ペ−ストで配線パタ−ン全体を覆うように絶縁層
4を形成し、転写シ−トを作製した。同様の順序で各層
の配線パタ−ンを形成した転写シ−トを作製し、各転写
シ−トの所定箇所にビア孔を炭酸ガスレ−ザによって穿
孔した。なおビア孔はパンチングによって穿孔してもよ
い。次に96%アルミナ基板上に転写シ−トを60℃,
80kg/cm2の条件で熱転写し、作製したビア用導
体ペ−ストをビア孔に充填した後にベ−スフィルムをは
がし、同様の順序で転写シ−トを積層して積層体を得
た。次に得られた積層体を加熱炉内の大気中で、脱バイ
ンダ処理した。この際の加熱条件はピ−ク温度450
℃、ピ−ク温度時間120分の図1(c)に示した温度
プロファイルとした。A wiring pattern (conductor layer 3) is formed by screen printing with a wiring conductor paste prepared on a base film (PET) whose surface has been subjected to a mold release treatment, and further an insulator pattern. An insulating layer 4 was formed so as to cover the entire wiring pattern with a strike, and a transfer sheet was produced. Transfer sheets each having a wiring pattern of each layer formed in the same order were prepared, and via holes were formed at predetermined positions of each transfer sheet by a carbon dioxide gas laser. The via holes may be punched by punching. Next, transfer the sheet onto a 96% alumina substrate at 60 ° C,
Thermal transfer was carried out under the condition of 80 kg / cm @ 2, the prepared via conductor paste was filled in the via holes, the base film was peeled off, and the transfer sheets were laminated in the same order to obtain a laminate. Next, the obtained laminated body was subjected to binder removal treatment in the air in the heating furnace. The heating condition at this time is a peak temperature of 450.
The temperature profile was as shown in FIG. 1C at a temperature of 120 ° C. for a peak temperature of 120 minutes.
【0018】しかる後、積層体中の導体成分である酸化
銅の還元処理を、加熱炉内の水素ガス雰囲気中で行っ
た。加熱条件はピ−ク温度350℃、ピ−ク温度時間1
80分の図1(d)に示した温度プロファイルとした。Thereafter, reduction treatment of copper oxide, which is a conductor component in the laminate, was performed in a hydrogen gas atmosphere in a heating furnace. The heating conditions are a peak temperature of 350 ° C and a peak temperature of 1 hour.
The temperature profile shown in FIG. 1D for 80 minutes was used.
【0019】さらに積層体を加熱炉内の窒素ガス雰囲気
中で焼結・焼成した。加熱条件はピ−ク温度900℃、
ピ−ク温度時間10分の図1(b)に示した温度プロフ
ァイルとした。こうして得られた多層配線基板のビア
は、ビア導体1と配線導体2の接触部分での断線やビア
孔内部の空隙が発生せず,ビア孔内壁にしっかりと密着
した緻密な構造のビア導体1が形成できた。ビア導体の
体積抵抗は3.0E−4ohm・cmであった。図2
(a)に本実施例で得られたビア部断面の模式図を示
す。Further, the laminate was sintered and fired in a nitrogen gas atmosphere in a heating furnace. The heating conditions are a peak temperature of 900 ° C,
The peak temperature was 10 minutes, and the temperature profile was as shown in FIG. The via of the multilayer wiring board thus obtained does not cause disconnection at the contact portion between the via conductor 1 and the wiring conductor 2 or a void inside the via hole, and the via conductor 1 having a dense structure firmly adhered to the inner wall of the via hole. Could be formed. The volume resistance of the via conductor was 3.0E-4 ohm · cm. Figure 2
A schematic view of the cross section of the via portion obtained in this example is shown in (a).
【0020】なお、ビア導体ペ−スト中の酸化銅とガラ
スの比率を変化させたものを作成して、同様に多層配線
基板を製造した。この時、酸化銅の比率が30重量%以
上含有されていないビア導体ペ−スト(ガラスセラミッ
ク成分が多い)を用いたものでは、断面が図2(a)に
示したような構造のビアが形成されたが、ガラス成分が
多すぎるために導通が得られなかった。一方、酸化銅の
比率が70重量%を越えるビア導体ペ−スト(銅が多
い)を用いたものでは、断面が図2(b)に示したよう
な構造のビアとなった。A multilayer wiring board was manufactured in the same manner by making the via conductor paste in which the ratio of copper oxide and glass was changed. At this time, in the case of using a via conductor paste (having a large glass-ceramic component) in which the proportion of copper oxide is not more than 30% by weight, a via having a structure as shown in FIG. Although formed, conduction was not obtained because there were too many glass components. On the other hand, in the case of using a via conductor paste (copper content is large) in which the proportion of copper oxide exceeds 70% by weight, the via has a structure as shown in FIG. 2B.
【0021】(実施例3)ビア用導体ペ−ストの原料と
して、平均粒径が約1ミクロンの酸化ルテニウム粉末
(田中貴金属社製)を50.0重量%、結晶化ガラスセ
ラミック粉末(日本電気硝子社製,MLS05)を3
3.4重量%、バインダとしてのエチルセルロ−ス系樹
脂を0.8重量%、溶剤としてのテルピネオ−ルを1
5.8重量%、それぞれ用意し、これらを充分に3本ロ
−ルにて充分に混合・混練してビア用導体ペ−ストを作
製した。(Embodiment 3) 50.0% by weight of a ruthenium oxide powder (manufactured by Tanaka Kikinzoku Co., Ltd.) having an average particle diameter of about 1 micron and a crystallized glass ceramic powder (NEC) Glass company, MLS05) 3
3.4% by weight, 0.8% by weight of ethyl cellulose resin as a binder, and 1% of terpineol as a solvent.
5.8% by weight of each was prepared, and these were sufficiently mixed and kneaded with three rolls to prepare a via conductor paste.
【0022】導体ペ−ストの原料として、平均粒径が約
1〜3ミクロンの酸化銅粉末(京都エレックス社製,C
B250粉砕)を85.5重量%、バインダとしてブチ
ラ−ル系樹脂+ベンジルブチルフタレ−トを11.5重
量%、溶剤としてのブチルカルビト−ルを3重量%を用
意し、これらを充分に3本ロ−ルにて充分に混合・混練
して導縁体ペ−ストを作製した。絶縁体ペ−ストの原料
として、(実施例1)と同様の絶縁体粉末を70重量
%、バインダとしてブチラ−ル系樹脂+ベンジルブチル
フタレ−トを15重量%、溶剤としてのブチルカルビト
−ルを15重量%を用意し、これらを充分に3本ロ−ル
にて充分に混合・混練して絶縁体ペ−ストを作製した。As a raw material for the conductor paste, copper oxide powder having an average particle size of about 1 to 3 microns (Kyoto Elex Co., C
(B250 pulverized), 85.5% by weight, butyral resin + benzyl butyl phthalate as a binder, 11.5% by weight, and butyl carbitol as a solvent, 3% by weight were prepared. Sufficiently mixed and kneaded with this roll to prepare a conductor paste. As a raw material for the insulating paste, 70% by weight of the same insulating powder as in (Example 1), 15% by weight of butyral resin + benzyl benzyl phthalate as a binder, and butyl carbitol as a solvent were used. 15 wt% was prepared, and these were thoroughly mixed and kneaded with three rolls to prepare an insulating paste.
【0023】表面に離型処理を施したベ−スフィルム
(PET)上に作製した導体ペ−ストでスクリ−ン印刷
により配線パタ−ン(導体層3)を形成し、さらに絶縁
体ペ−ストで配線パタ−ン全体を覆うように絶縁層4を
形成し、転写シ−トを作製した。同様の順序で各層の配
線パタ−ンを形成した転写シ−トを作製し、各転写シ−
トの所定箇所にビア孔を炭酸ガスレ−ザによって穿孔し
た。なおビア孔はパンチングによって穿孔してもよい。
次に96%アルミナ基板上に転写シ−トを60℃,80
kg/cm2の条件で熱転写し、作製したビア用導体ペ
−ストをビア孔に充填した後にベ−スフィルムをはが
し、同様の順序で転写シ−トを積層して積層体を得た。A wiring pattern (conductor layer 3) is formed by screen printing with a conductor paste prepared on a base film (PET) whose surface has been subjected to a release treatment, and further an insulator pattern. The insulating layer 4 was formed so as to cover the entire wiring pattern with a strike, and a transfer sheet was produced. In the same order, transfer sheets each having a wiring pattern formed on each layer were prepared, and each transfer sheet was formed.
Via holes were drilled at predetermined locations on the substrate using a carbon dioxide laser. The via holes may be punched by punching.
Next, a transfer sheet was placed on a 96% alumina substrate at 60 ° C and 80 ° C.
Thermal transfer was carried out under the condition of kg / cm @ 2, the prepared via conductor paste was filled in the via holes, the base film was peeled off, and the transfer sheets were laminated in the same order to obtain a laminate.
【0024】次に得られた積層体を加熱炉内の大気中
で、脱バインダ処理した。この際の加熱条件はピ−ク温
度450℃、ピ−ク温度時間120分の図1(c)に示
した温度プロファイルとした。Next, the obtained laminated body was subjected to binder removal treatment in the air in a heating furnace. The heating conditions at this time were the temperature profile shown in FIG. 1C for a peak temperature of 450 ° C. and a peak temperature time of 120 minutes.
【0025】しかる後、積層体中の導体成分である酸化
銅の還元処理を、加熱炉内の水素ガス雰囲気中で行っ
た。加熱条件はピ−ク温度350℃、ピ−ク温度時間1
80分の図1(d)に示した温度プロファイルとした。Thereafter, reduction treatment of copper oxide, which is a conductor component in the laminate, was performed in a hydrogen gas atmosphere in a heating furnace. The heating conditions are a peak temperature of 350 ° C and a peak temperature of 1 hour.
The temperature profile shown in FIG. 1D for 80 minutes was used.
【0026】さらに積層体を加熱炉内の窒素ガス雰囲気
中で焼結・焼成した。加熱条件はピ−ク温度900℃、
ピ−ク温度時間10分の図1(b)に示した温度プロフ
ァイルとした。こうして得られた多層配線基板のビア
は、(実施例1)や(実施例2)と同様にビア導体1と
配線導体2の接触部分での断線やビア孔内部の空隙が発
生せず、ビア孔内壁にしっかりと密着した緻密な構造の
ビア導体1が形成できた。これの体積抵抗は2.3E−
3ohm・cmであった。Further, the laminate was sintered and fired in a nitrogen gas atmosphere in a heating furnace. The heating conditions are a peak temperature of 900 ° C,
The peak temperature was 10 minutes, and the temperature profile was as shown in FIG. The via of the multilayer wiring board thus obtained does not cause disconnection at the contact portion between the via conductor 1 and the wiring conductor 2 or voids inside the via hole as in the case of (Example 1) or (Example 2). It was possible to form the via conductor 1 having a dense structure that was firmly adhered to the inner wall of the hole. The volume resistance of this is 2.3E-
It was 3 ohm · cm.
【0027】なお、ビア導体ペ−スト中の酸化ルテニウ
ムとガラスセラミックの比率を変化させたものを作成し
て、同様に多層配線基板を製造した。この時、酸化ルテ
ニウムの比率が30重量%以上含有されていないビア導
体ペ−スト(ガラスセラミック成分が多い)を用いたも
のでは、断面が図2(a)に示したような構造のビアが
形成されたが、ガラスセラミック成分が多すぎるために
導通が得られなかった。一方、酸化ルテニウムの比率が
70重量%を越えるビア導体ペ−スト(ルテニウムが多
い)を用いたものでは、断面が図2(b)に示したよう
な構造のビアとなった。A multilayer wiring board was manufactured in the same manner by making the via conductor paste in which the ratio of ruthenium oxide and glass ceramic was changed. At this time, in the case of using a via conductor paste (having a large glass ceramic component) in which the ratio of ruthenium oxide is 30% by weight or more, a via having a structure as shown in FIG. Although formed, conduction was not obtained due to too much glass ceramic component. On the other hand, in the case of using a via conductor paste (mostly ruthenium) having a ruthenium oxide ratio of more than 70% by weight, a via having a structure as shown in FIG.
【0028】以上の(実施例1)から(実施例3)で
は、ガラス転移温度570℃の絶縁層材料に対して、ビ
ア導体中のガラスセラミックの軟化温度が670℃のも
のを用いたが、これは570℃以上のものであれば組成
などによって制限を受けることはない。しかしながら、
容易に類推できるように、強度や絶縁抵抗、配線抵抗お
よび信頼性などの特性的観点から、絶縁層材料と配線導
体材料に対して要求される焼成温度(以上の実施例の場
合は900℃)以下において、軟化すべきガラスセラミ
ックでなければならない。In the above (Example 1) to (Example 3), an insulating layer material having a glass transition temperature of 570 ° C. and a glass conductor having a softening temperature of 670 ° C. in the via conductor were used. This is not limited by the composition as long as it is 570 ° C. or higher. However,
As can be easily inferred, the firing temperature required for the insulating layer material and the wiring conductor material (900 ° C. in the above examples) from the characteristic points of view such as strength, insulation resistance, wiring resistance and reliability. In the following, it must be a glass-ceramic to be softened.
【0029】また、以上の実施例で用いた絶縁層材料
は、ホウケイ酸ガラスにアルミナをフィラ−として含有
する材料であるが、このガラスとしてはホウケイ酸鉛
系、ホウケイ酸カルシウム系などのホウケイ酸塩系ガラ
スをはじめ、一般に電気的絶縁を目的とした特性を備え
たガラスであれば問題なく使用することができる。フィ
ラ−としても石英やフォルステライトなど、電気的絶縁
特性に優れた材料であれば本発明において使用できる。The insulating layer material used in the above examples is a material containing alumina as filler in borosilicate glass, and this glass is borosilicate such as lead borosilicate or calcium borosilicate. In general, it is possible to use a glass having a property intended for electrical insulation, such as a salt-based glass, without any problem. As the filler, any material having excellent electrical insulating properties such as quartz or forsterite can be used in the present invention.
【0030】(実施例4) (実施例1)から(実施例3)に示したビア導体ペ−ス
ト中のガラスセラミックをMLS27(日本電気硝子社
製、試作品、ガラス転移温度520℃)にかえて同様に
ビア導体ペ−ストを作成した。(Example 4) The glass ceramic in the via conductor paste shown in (Example 1) to (Example 3) was changed to MLS27 (manufactured by Nippon Electric Glass Co., Ltd., prototype, glass transition temperature 520 ° C). Instead, a via conductor paste was prepared in the same manner.
【0031】次に(実施例1)から(実施例3)で用い
た絶縁体粉末にかえて、ガラス転移温度が450℃の絶
縁体粉末(アルミナ+石英+ホウケイ酸鉛ガラス)を用
いて、絶縁体ペ−ストを作成し、焼成温度を850℃と
して同様の方法で多層配線基板を製造した。得られた多
層配線基板のビアは、(実施例1)から(実施例3)で
示したものと同等の形状、構造および特性を有するもの
であった。Next, in place of the insulator powder used in (Example 1) to (Example 3), an insulator powder (alumina + quartz + lead borosilicate glass) having a glass transition temperature of 450 ° C. was used. An insulating paste was prepared and a firing temperature was set to 850 ° C. to manufacture a multilayer wiring board by the same method. The vias of the obtained multilayer wiring board had the same shape, structure and characteristics as those shown in (Example 1) to (Example 3).
【0032】以上の実施例においては、ビア導体の導電
成分として銀、銅およびルテニウムを用いた例を挙げて
説明したが、この導電成分としては、絶縁層材料と配線
導体材料の種類、およびそれによって要請される熱処理
プロセス条件に応じて、パラジウムや銀−パラジウム、
白金や白金−パラジウム、金、ニッケルなどを選択して
使用することができる。In the above embodiments, an example was described in which silver, copper and ruthenium were used as the conductive components of the via conductor. The conductive components include the types of insulating layer material and wiring conductor material, and Depending on the heat treatment process conditions required by
Platinum, platinum-palladium, gold, nickel or the like can be selected and used.
【0033】また、積層方法としても上記実施例のよう
な熱転写法だけでなく、グリ−ンシ−ト法にも本発明が
適用できることはいうまでもなく、従って、本発明はセ
ラミック多層配線基板以外にも、配線層間の導通が必要
とされる電子部品の製造に広く応用することができる。It is needless to say that the present invention can be applied not only to the thermal transfer method as in the above embodiment but also to the green sheet method as a laminating method. Therefore, the present invention is not limited to the ceramic multilayer wiring board. In addition, it can be widely applied to the manufacture of electronic components that require conduction between wiring layers.
【0034】[0034]
【発明の効果】以上のように本発明は、ビア用の導体
に,導体材料粉末30.0〜70.0重量%とガラス転
移温度が絶縁材料のガラス転移温度よりも高い結晶化ガ
ラスセラミック粉末30.0〜70.0重量%から成る
無機成分と,少なくとも有機バインダと溶剤より成る有
機ビヒクル成分を備えた導体ペ−スト組成物を用いるの
で,ビア孔を形成する絶縁材料が軟化し焼結してビア孔
が形成された後に,ビア孔内部のビア導体材料中のガラ
ス成分が軟化しビア導体が焼結するので,ビア導体部分
での断線やビア孔内部に空隙が発生せず,ビア孔にしっ
かりと密着した緻密な構造の信頼性の高いビア導体が形
成できる。INDUSTRIAL APPLICABILITY As described above, according to the present invention, the conductor for vias is made of crystallized glass ceramic powder having a conductive material powder of 30.0 to 70.0% by weight and a glass transition temperature higher than the glass transition temperature of the insulating material. Since the conductor paste composition including the inorganic component composed of 30.0 to 70.0% by weight and the organic vehicle component composed of at least the organic binder and the solvent is used, the insulating material forming the via hole is softened and sintered. After the via hole is formed, the glass component in the via conductor material inside the via hole is softened and the via conductor is sintered, so that no disconnection at the via conductor portion or a void does not occur inside the via hole. It is possible to form a highly reliable via conductor having a precise structure that is firmly attached to the hole.
【図1】(a)は本発明の一実施例による多層配線基板
の製造方法における脱バインダ工程の温度プロファイル
を示す関係図 (b)は同じく焼結・焼成工程の温度プロファイルを示
す関係図 (c)は同じく脱バインダ工程の温度プロファイルを示
す関係図 (d)は同じく還元工程の温度プロファイルを示す関係
図1A is a relationship diagram showing a temperature profile of a binder removal step in a method for manufacturing a multilayer wiring board according to an embodiment of the present invention, and FIG. 1B is a relationship diagram showing a temperature profile of a sintering / firing step similarly. (c) is a relationship diagram showing the temperature profile of the binder removal process (d) is a relationship diagram showing the temperature profile of the reduction process
【図2】(a)は本発明の一実施例による多層配線基板
のビア断面の模式図 (b)は同多層配線基板のビア断面の模式図FIG. 2A is a schematic diagram of a via cross section of a multilayer wiring board according to an embodiment of the present invention. FIG. 2B is a schematic diagram of a via cross section of the multilayer wiring board.
1 ビア導体 2 ビア孔 3 導体層 4 絶縁層 5 積層体 1 Via conductor 2 Via hole 3 Conductor layer 4 Insulating layer 5 Laminated body
───────────────────────────────────────────────────── フロントページの続き (72)発明者 祐伯 聖 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 箱谷 靖彦 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 三浦 和裕 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yuu Kiyoshi 1006 Kadoma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Inventor, Yasuhiko Hakotani, 1006 Kadoma, Kadoma, Osaka (72) Inventor Kazuhiro Miura 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (2)
ストにおいて,導体材料粉末30.0〜70.0重量%
とガラス転移温度が絶縁材料のガラス転移温度よりも高
い温度の結晶化ガラスセラミック粉末30.0〜70.
0重量%から成る無機成分と,少なくとも有機バインダ
と溶剤より成る有機ビヒクル成分を備えたことを特徴と
する導体ペ−スト組成物。1. A conductor conductor for a via of a ceramic multilayer wiring board.
In the strike, conductive material powder 30.0-70.0% by weight
And a crystallized glass ceramic powder having a glass transition temperature higher than the glass transition temperature of the insulating material 30.0 to 70.
A conductor paste composition comprising 0% by weight of an inorganic component and an organic vehicle component comprising at least an organic binder and a solvent.
ム,金,銅,パラジウム,白金,ニッケル,もしくはそ
れらの合金であることを特徴とする請求項1記載の導体
ペ−スト組成物。2. The conductor paste composition according to claim 1, wherein the conductor material is silver, copper oxide, ruthenium oxide, gold, copper, palladium, platinum, nickel, or an alloy thereof.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4252596A JP3006310B2 (en) | 1992-09-22 | 1992-09-22 | Conductive paste composition |
DE69329357T DE69329357T2 (en) | 1992-05-14 | 1993-04-30 | Process for the production of conductors in contact holes in multilayer ceramic substrates |
EP93107029A EP0569799B1 (en) | 1992-05-14 | 1993-04-30 | Method for making via conductors in multilayer ceramic substrates |
TW082103537A TW304267B (en) | 1992-05-14 | 1993-05-06 | |
KR93008206A KR970005710B1 (en) | 1992-05-14 | 1993-05-13 | Conductive paste for a ceramic substrate |
US08/254,414 US5496619A (en) | 1992-05-14 | 1994-06-06 | Assembly formed from conductive paste and insulating paste |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4252596A JP3006310B2 (en) | 1992-09-22 | 1992-09-22 | Conductive paste composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06103811A true JPH06103811A (en) | 1994-04-15 |
JP3006310B2 JP3006310B2 (en) | 2000-02-07 |
Family
ID=17239573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4252596A Expired - Fee Related JP3006310B2 (en) | 1992-05-14 | 1992-09-22 | Conductive paste composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3006310B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794840A (en) * | 1993-06-14 | 1995-04-07 | Nikko Co | Through-hole filled ceramic substrate and conductor paste for through hole |
JP2001223154A (en) * | 2000-02-10 | 2001-08-17 | Fujitsu Ltd | Charged particle beam aligner, electrostatic deflector and method of manufacturing the same |
JP2001307671A (en) * | 2000-04-21 | 2001-11-02 | Fujitsu Ltd | Electrode material, electrode for charged particle beam device, and method of manufacturing the same |
CN114615798A (en) * | 2022-04-01 | 2022-06-10 | 广州三则电子材料有限公司 | Zero-shrinkage hole-filling conductive slurry and preparation method thereof |
-
1992
- 1992-09-22 JP JP4252596A patent/JP3006310B2/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0794840A (en) * | 1993-06-14 | 1995-04-07 | Nikko Co | Through-hole filled ceramic substrate and conductor paste for through hole |
JP2001223154A (en) * | 2000-02-10 | 2001-08-17 | Fujitsu Ltd | Charged particle beam aligner, electrostatic deflector and method of manufacturing the same |
JP2001307671A (en) * | 2000-04-21 | 2001-11-02 | Fujitsu Ltd | Electrode material, electrode for charged particle beam device, and method of manufacturing the same |
CN114615798A (en) * | 2022-04-01 | 2022-06-10 | 广州三则电子材料有限公司 | Zero-shrinkage hole-filling conductive slurry and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP3006310B2 (en) | 2000-02-07 |
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