JPH06232243A - Electrostatic chuck - Google Patents
Electrostatic chuckInfo
- Publication number
- JPH06232243A JPH06232243A JP3469993A JP3469993A JPH06232243A JP H06232243 A JPH06232243 A JP H06232243A JP 3469993 A JP3469993 A JP 3469993A JP 3469993 A JP3469993 A JP 3469993A JP H06232243 A JPH06232243 A JP H06232243A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- conductor
- sample
- ceramic
- sprayed film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
(57)【要約】
【目的】 吸着性及び応答性を低下させずに、絶縁耐圧
及び安定性に優れ、劣化が抑制される静電チャックを提
供すること。
【構成】 円板型電極であるアルミニウムの導電体１の
上面は絶縁体であるセラミックス溶射膜２で被覆され、
側面, 底面及び角部はセラミックス溶射膜３で被覆され
ている。試料の吸着部となるセラミックス溶射膜２は、
ＴｉＯ2 25wt％以下を含むＡｌ2 Ｏ3 のセラミックス粉
末を、その体積抵抗率が109 〜1011Ω・cmとなるように
調整し、導電体１の上面に溶射する。また、他の全部と
なるセラミックス溶射膜３は、その体積抵抗率が1012〜
1014Ω・cmとなるように調整されたＡｌ2 Ｏ3 のセラミ
ックス粉末を、導電体１の側面，底面及び角部に溶射す
る。セラミックス溶射膜２上に試料９が載置され、電圧
印加により試料９が吸着,保持されようになっている。
(57) [Abstract] [Purpose] To provide an electrostatic chuck that is excellent in withstand voltage and stability, and suppresses deterioration without lowering adsorption and responsiveness. [Structure] The upper surface of an aluminum conductor 1 which is a disk-shaped electrode is covered with a ceramic sprayed film 2 which is an insulator,
The side surface, the bottom surface and the corners are covered with the ceramic sprayed film 3. The ceramic sprayed film 2 that serves as the sample adsorption part is
A ceramic powder of Al 2 O 3 containing 25 wt% or less of TiO 2 is adjusted to have a volume resistivity of 10 9 to 10 11 Ω · cm and is sprayed on the upper surface of the conductor 1. In addition, the volumetric resistivity of the ceramic sprayed coating 3 which is the other part is 10 12 to
A ceramic powder of Al 2 O 3 adjusted to 10 14 Ω · cm is sprayed on the side surface, bottom surface and corners of the conductor 1. A sample 9 is placed on the ceramic sprayed film 2, and the sample 9 is attracted and held by applying a voltage.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば半導体集積回路
表面上に成膜処理又はエッチング処理等の各種処理が施
される試料を、静電力により吸着，保持する静電チャッ
クに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for attracting and holding a sample, which is subjected to various kinds of processing such as film forming processing or etching processing on the surface of a semiconductor integrated circuit, by electrostatic force.
【０００２】[0002]
【従来の技術】エッチング装置又はＣＶＤ装置内にて半
導体基板に種々の処理を施す場合に、半導体基板を各装
置内に保持するために静電チャックが用いられている。
静電チャックは導電体上に絶縁膜を被覆し、この絶縁膜
の上面に被吸着物である半導体基板を密接させ、導電体
と半導体基板との間に直流電圧を印加して、両者間に静
電力を生ぜしめ、この静電力により半導体基板を導電体
上に吸着，保持するものである。2. Description of the Related Art An electrostatic chuck is used to hold a semiconductor substrate in each apparatus when the semiconductor substrate is subjected to various treatments in an etching apparatus or a CVD apparatus.
The electrostatic chuck covers an insulating film on a conductor, and a semiconductor substrate, which is an object to be adsorbed, is brought into close contact with the upper surface of the insulating film. An electrostatic force is generated, and the electrostatic force attracts and holds the semiconductor substrate on the conductor.
【０００３】本願出願人は、実開昭64−11542 号公報に
おいて、導電体上にセラミックス溶射により絶縁膜を被
覆した静電チャックを提案した。図４は、この一例であ
る静電チャックの模式的縦断面図であり、円板型電極で
あるアルミニウムの導電体11の全表面にセラミックス溶
射によりＡｌ2 Ｏ3 を主成分とした絶縁膜（以下セラミ
ックス溶射膜という）12が被覆されている。導電体11よ
りも大きい直径の水冷ジャケット17が、導電体11の下部
及び下面を覆う様態にて配されている。水冷ジャケット
17内には流通孔18が設けられており、冷媒の流通により
導電体11を冷却するようになっている。また、導電体11
の下面中央部には電圧印加用の端子16が接続されてお
り、絶縁膜12上の平坦な吸着部に載置された試料19が、
電圧印加により吸着, 保持されようになっている。The applicant of the present application has proposed, in Japanese Utility Model Laid-Open No. 64-11542, an electrostatic chuck in which a conductor is coated with an insulating film by ceramics spraying. FIG. 4 is a schematic vertical cross-sectional view of an electrostatic chuck which is an example of this. An insulating film containing Al 2 O 3 as a main component is formed by ceramics spraying on the entire surface of an aluminum conductor 11 which is a disk electrode. Hereinafter, it is referred to as a ceramic sprayed film) 12. A water cooling jacket 17 having a diameter larger than that of the conductor 11 is arranged so as to cover the lower portion and the lower surface of the conductor 11. Water cooling jacket
A circulation hole 18 is provided in the interior 17 so that the conductor 11 is cooled by the circulation of the refrigerant. In addition, the conductor 11
The terminal 16 for voltage application is connected to the central portion of the lower surface of the sample 19, and the sample 19 placed on the flat adsorption portion on the insulating film 12 is
It is designed to be attracted and held by applying a voltage.
【０００４】このようなセラミックス溶射膜を用いた静
電チャックは、従来の、導電体をセラミックスに埋設し
たタイプ, 導電体表面に絶縁体フィルムを貼付したタイ
プのものと比較して、吸着部の耐熱性及び耐久性に優
れ、静電吸着力が大きい等の利点を有している。The electrostatic chuck using such a ceramic sprayed film is more suitable for the adsorption part than the conventional type in which a conductor is embedded in ceramics and the type in which an insulator film is stuck on the surface of the conductor. It has advantages such as excellent heat resistance and durability, and large electrostatic attraction.
【０００５】しかしながら、上述の如きＡｌ2 Ｏ3 を主
成分としたセラミックス溶射膜を用いた静電チャック
は、応答特性に劣るという問題があった。即ち、試料が
吸着されるまでの飽和吸着力到達時間が長い、又は電圧
印加を停止してから残留電荷が消滅するまでの吸着力消
滅時間が長い。これを解決するために、本願出願人は、
特開平３−204924号公報において、体積固有抵抗率（以
下体積抵抗率という）が低い組成のセラミックス溶射膜
を用いた静電チャックを提案した。However, the electrostatic chuck using the ceramic sprayed film containing Al 2 O 3 as a main component as described above has a problem that the response characteristic is inferior. That is, the saturated adsorption force arrival time until the sample is adsorbed is long, or the adsorption force extinction time after the voltage application is stopped until the residual charge disappears is long. In order to solve this, the present applicant has
In Japanese Patent Laid-Open No. 3-204924, an electrostatic chuck using a ceramic sprayed film having a composition with a low volume resistivity (hereinafter referred to as volume resistivity) was proposed.
【０００６】図５は、この一例である静電チャックの模
式的縦断面図である。円板型電極であるアルミニウムの
導電体21の全表面が、セラミックス溶射膜22で被覆され
ており、このセラミックス溶射膜22の組成は、Ａｌ2 Ｏ
3 に対して２５wt％以下の割合でＴｉＯ2 が含まれたも
のである。なお、このセラミックス溶射膜22は、溶射時
に生じた細孔に樹脂を含浸させて、絶縁膜を保護する封
孔処理が施されている。導電体21の内部には冷却ブライ
ン24が設けられており、冷媒の流通により導電体21を冷
却できるようになっている。また、導電体21の底部中央
には電圧端子25が導入されており、電圧印加により静電
チャック上に載置された試料29が吸着,保持されように
なっている。FIG. 5 is a schematic vertical sectional view of an electrostatic chuck which is an example of this. The entire surface of the aluminum conductor 21, which is a disk-shaped electrode, is covered with a ceramic sprayed film 22, and the composition of this ceramic sprayed film 22 is Al 2 O.
TiO 2 is contained in a ratio of 25 wt% or less with respect to 3 . The ceramic sprayed film 22 is subjected to a sealing treatment to protect the insulating film by impregnating pores generated during spraying with resin. A cooling brine 24 is provided inside the conductor 21 so that the conductor 21 can be cooled by the circulation of the refrigerant. Further, a voltage terminal 25 is introduced in the center of the bottom of the conductor 21, so that the sample 29 placed on the electrostatic chuck can be attracted and held by the voltage application.
【０００７】このような構成の静電チャックでは、セラ
ミックス溶射膜22をＴｉＯ2 が含有された組成にするこ
とにより、その体積抵抗率が109 〜1011Ω・cmとなるよ
うに調整している。これにより応答特性を向上させ、即
ち静電吸着力が大きくしかも残留吸着力が殆ど存在せ
ず、さらには絶縁破壊を生じることがない静電チャック
を得ることができる。In the electrostatic chuck having such a structure, the ceramic sprayed film 22 is adjusted to have a volume resistivity of 10 9 to 10 11 Ω · cm by using a composition containing TiO 2. There is. As a result, it is possible to obtain an electrostatic chuck having improved response characteristics, that is, a large electrostatic attraction force, almost no residual attraction force, and no dielectric breakdown.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら、体積抵
抗率が低いセラミックス溶射膜は、体積抵抗率が高いセ
ラミックス溶射膜に比較して絶縁耐圧が低く、安定性が
低い。また、セラミックス溶射膜は、プラズマ溶融セラ
ミックスをスプレー散布するという製法上、導電体の平
坦な吸着部に溶射されたものよりも、凹凸を有する側
面, 角部に溶射されたものの方が、溶射付着率が低く、
従って絶縁耐圧が低い。さらに、半導体製造過程におい
て、静電チャックがプラズマ雰囲気中に配設される場合
は、プラズマに直接曝される側面及び角部は、試料を保
持することによりプラズマに直接曝されない吸着部より
も、プラズマ処理回数が増すに従い耐久性が著しく低下
する。However, a ceramic sprayed film having a low volume resistivity has a lower withstand voltage and a lower stability than a ceramic sprayed film having a high volume resistivity. In addition, due to the manufacturing method of spraying plasma-melted ceramics, the ceramics sprayed film is sprayed on the side surface with irregularities and on the corners rather than on the flat adsorption part of the conductor. Low rate,
Therefore, the withstand voltage is low. Furthermore, in the semiconductor manufacturing process, when the electrostatic chuck is arranged in a plasma atmosphere, the side surface and the corner portion that are directly exposed to the plasma are more than the adsorption portion that is not directly exposed to the plasma by holding the sample. The durability is remarkably reduced as the number of plasma treatments is increased.
【０００９】これらのことから、上述の体積抵抗率が低
いセラミックス溶射膜を用いた静電チャックは、その側
面及び角部において、絶縁耐圧及び耐久性が低いという
問題があった。For these reasons, the electrostatic chuck using the ceramic sprayed film having a low volume resistivity described above has a problem that the dielectric strength and the durability are low at the side surfaces and the corners.
【００１０】本発明は、かかる事情に鑑みてなされたも
のであり、静電チャックの試料吸着部外に形成される絶
縁膜の組成を、吸着部とは異なる体積抵抗率の組成にす
ることにより、吸着性及び応答性を低下させずに、絶縁
耐圧及び安定性に優れ、劣化が抑制される静電チャック
を提供することを目的とする。The present invention has been made in view of such circumstances, and the composition of the insulating film formed outside the sample adsorption portion of the electrostatic chuck has a volume resistivity different from that of the adsorption portion. It is an object of the present invention to provide an electrostatic chuck that is excellent in withstand voltage and stability, and whose deterioration is suppressed, without lowering the adsorptivity and responsiveness.
【００１１】[0011]
【課題を解決するための手段】本発明に係る静電チャッ
クは、導電体が絶縁膜で被覆され、試料と前記絶縁膜と
の間に電圧を印加して前記絶縁膜上に試料を吸着する静
電チャックにおいて、前記絶縁膜の前記試料に対する吸
着部と他の一部又は全部とが、体積固有抵抗率を異なら
せる組成で構成されていることを特徴とする。In an electrostatic chuck according to the present invention, a conductor is coated with an insulating film, and a voltage is applied between the sample and the insulating film to adsorb the sample on the insulating film. In the electrostatic chuck, the adsorption portion of the insulating film for the sample and a part or all of the other portions are made of a composition having different volume specific resistivities.
【００１２】[0012]
【作用】本発明の静電チャックでは、試料を保持する吸
着部と他の一部又は全部とを異なる体積固有抵抗率とな
るよう形成している。吸着部に体積固有抵抗率が低い絶
縁膜を用い、側面及び角部等のような他の一部又は全部
に体積固有抵抗率が高い絶縁膜を用いた場合は、吸着部
は試料との吸着力及び応答特性に優れ、他の一部又は全
部は絶縁耐圧及び安定性に優れ、その結果劣化が抑制さ
れる。In the electrostatic chuck of the present invention, the adsorption portion for holding the sample and the other part or all are formed to have different volume specific resistivities. If an insulating film with a low volume resistivity is used for the adsorption part and an insulating film with a high volume resistivity is used for some or all of the side surface and corners, the adsorption part will adsorb with the sample. The force and response characteristics are excellent, and some or all of them are also excellent in dielectric strength and stability, and as a result, deterioration is suppressed.
【００１３】[0013]
【実施例】以下、本発明をその実施例を示す図面に基づ
き具体的に説明する。図１は、本発明の静電チャックの
模式的縦断面図である。円板型電極であるアルミニウム
の導電体１の内部には冷却ブライン４が設けられてお
り、図中矢符方向に冷媒を流通させることにより、導電
体１を冷却できるようになっている。この導電体１の全
表面には絶縁体が被覆されており、この絶縁体は、導電
体１の上面を被覆するセラミックス溶射膜２、及び側
面, 底面及び角部を被覆するセラミックス溶射膜３であ
る。前記吸着部となるセラミックス溶射膜２は、ＴｉＯ
2 を含むＡｌ2 Ｏ3 のセラミックス粉末を、その体積抵
抗率が109 〜1011Ω・cmとなるように調整し、プラズマ
により高温溶融させて、導電体１の上面にスプレー状に
散布して溶着することにより形成される。また、前記他
の全部となるセラミックス溶射膜３は、その体積抵抗率
が1012〜1014Ω・cmとなるように調整されたＡｌ2 Ｏ3
のセラミックス粉末を、導電体１の側面，底面及び角部
に同様に溶着することにより形成される。このように、
異なる組成のセラミックス溶射膜２，３が形成された
後、溶射によりセラミックス溶射膜２，３に生じた細孔
に樹脂を含浸させて封孔処理を施す。この封孔処理によ
り、静電チャックの絶縁耐圧はさらに向上する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments. FIG. 1 is a schematic vertical sectional view of an electrostatic chuck of the present invention. A cooling brine 4 is provided inside the aluminum conductor 1 that is a disk-shaped electrode, and the conductor 1 can be cooled by circulating a coolant in the arrow direction in the drawing. The entire surface of the conductor 1 is covered with an insulator, and the insulator is composed of a ceramic sprayed film 2 covering the upper surface of the conductor 1 and a ceramic sprayed film 3 covering side surfaces, bottom surfaces and corners. is there. The ceramic sprayed film 2 serving as the adsorption part is formed of TiO 2.
The Al 2 O 3 ceramic powder containing 2 is adjusted to have a volume resistivity of 10 9 to 10 11 Ω · cm, melted at high temperature by plasma, and sprayed on the upper surface of the conductor 1. It is formed by welding. In addition, the ceramic sprayed film 3 which is the whole of the above is Al 2 O 3 whose volume resistivity is adjusted to be 10 12 to 10 14 Ω · cm.
It is formed by similarly welding the ceramic powder of (1) to the side surface, the bottom surface and the corners of the conductor 1. in this way,
After the ceramic sprayed coatings 2 and 3 having different compositions are formed, the pores generated in the ceramic sprayed coatings 2 and 3 by thermal spraying are impregnated with resin to perform a sealing treatment. This sealing treatment further improves the dielectric strength of the electrostatic chuck.
【００１４】また、導電体１の底部中央には電圧端子５
が導入，接続されている。このように形成された静電チ
ャックの吸着部、即ちセラミックス溶射膜２上に試料９
が載置され、電圧印加により試料９が吸着, 保持されよ
うになっている。なお、本実施例のセラミックス溶射膜
２の組成は、Ａｌ2 Ｏ3 に対しＴｉＯ2を５〜25％含有
させたものであり、セラミックス溶射膜３はＡｌ2 Ｏ3
94％以上である。A voltage terminal 5 is provided at the center of the bottom of the conductor 1.
Is installed and connected. The sample 9 is placed on the adsorption portion of the electrostatic chuck thus formed, that is, on the ceramic sprayed film 2.
Is mounted, and the sample 9 is adsorbed and held by voltage application. The composition of the ceramics sprayed film 2 of the present embodiment is intended to Al 2 O 3 was contained TiO 2 5 to 25%, the ceramics sprayed film 3 is Al 2 O 3
94% or more.
【００１５】以上の如き静電チャックをプラズマ装置内
に配設し、プラズマ処理を行うと共にリーク電流を測定
した。図２はこのリーク電流を測定するための装置の模
式的断面図である。プラズマ装置Ｐ内に本実施例の静電
チャック８を配設する。静電チャック８の電圧端子５は
電流計６を介して直流電源７に接続されている。静電チ
ャック８上に試料９を載置し、静電チャック８に直流電
圧を印加すると、試料９は静電チャック８の吸着部に吸
着，保持される。そして、試料９にプラズマを照射し、
電流計６に流れるリーク電流値を測定する。The electrostatic chuck as described above was placed in a plasma apparatus, plasma processing was performed, and leak current was measured. FIG. 2 is a schematic sectional view of an apparatus for measuring this leak current. The electrostatic chuck 8 of this embodiment is arranged in the plasma device P. The voltage terminal 5 of the electrostatic chuck 8 is connected to the DC power supply 7 via the ammeter 6. When the sample 9 is placed on the electrostatic chuck 8 and a DC voltage is applied to the electrostatic chuck 8, the sample 9 is adsorbed and held on the adsorption part of the electrostatic chuck 8. Then, the sample 9 is irradiated with plasma,
The leak current value flowing through the ammeter 6 is measured.
【００１６】図３は、この測定結果を示したグラフであ
る。縦軸はリーク電流値を、横軸は印加電圧値を表して
いる。上述の本実施例の静電チャック８及び従来例とし
て従来の静電チャックについてリーク電流を測定した。
グラフから明らかなように、本実施例の静電チャックの
リーク電流は、従来のものと比較して低く、絶縁膜が安
定であり、静電チャックの絶縁耐圧が優れていることが
判る。FIG. 3 is a graph showing the results of this measurement. The vertical axis represents the leak current value, and the horizontal axis represents the applied voltage value. The leak current was measured for the electrostatic chuck 8 of the present embodiment described above and a conventional electrostatic chuck as a conventional example.
As is apparent from the graph, the electrostatic chuck of this embodiment has a lower leak current than the conventional one, the insulating film is stable, and the electrostatic chuck has a high withstand voltage.
【００１７】なお、本実施例では、絶縁膜の吸着部及び
他の全部にセラミックス溶射膜を用いたが、これに限る
ものではなく、吸着部には体積抵抗率が低く試料の吸着
力及び応答特性に優れる絶縁膜を、側面及び角部には体
積抵抗率が高く絶縁耐圧特性に優れる、例えば樹脂コー
ティングを用いても良い。In this embodiment, the ceramic sprayed film was used for the adsorption part of the insulating film and all other parts, but the invention is not limited to this, and the adsorption part has a low volume resistivity and the adsorption force and response of the sample. An insulating film having excellent characteristics may be used, for example, a resin coating having high volume resistivity and excellent withstand voltage characteristics on the side surfaces and the corners.
【００１８】また、本実施例では、側面, 底面及び角部
に体積抵抗率が高い絶縁膜を形成しているが、これに限
るものではなく、絶縁膜が形成し易くプラズマの影響を
受けにくいような底面は、低い体積抵抗率の絶縁膜を形
成しても良い。Further, in this embodiment, the insulating film having a high volume resistivity is formed on the side surface, the bottom surface and the corners, but the present invention is not limited to this, and the insulating film is easily formed and is hardly influenced by plasma. Such a bottom surface may be formed with an insulating film having a low volume resistivity.
【００１９】[0019]
【発明の効果】以上のように、本発明においては、静電
チャックの絶縁膜の吸着部と他の一部又は全部を体積抵
抗率が異なる組成で形成することにより、特に絶縁耐圧
及び安定性が低くなり易い側面及び角部のような、他の
一部又は全部の絶縁膜の絶縁耐圧及び安定性を向上する
ことができる。これにより、静電チャックの吸着性及び
応答性を低下させずに、絶縁耐圧及び安定性が向上し、
劣化が抑制される等、本発明は優れた効果を奏するもの
である。As described above, according to the present invention, the dielectric strength and stability are particularly improved by forming the adsorption portion of the insulating film of the electrostatic chuck and a part or all of the other portions with compositions having different volume resistivities. It is possible to improve the dielectric strength and stability of some or all of other insulating films such as side surfaces and corners that tend to become low. This improves the dielectric strength and stability without deteriorating the adsorption and responsiveness of the electrostatic chuck,
The present invention has excellent effects such as suppression of deterioration.
【図１】本発明の静電チャックの模式的縦断面図であ
る。FIG. 1 is a schematic vertical sectional view of an electrostatic chuck of the present invention.
【図２】リーク電流を測定するための装置の模式的断面
図である。FIG. 2 is a schematic sectional view of an apparatus for measuring leak current.
【図３】リーク電流の測定結果を表したグラフである。FIG. 3 is a graph showing measurement results of leak current.
【図４】従来の静電チャックの模式的縦断面図である。FIG. 4 is a schematic vertical sectional view of a conventional electrostatic chuck.
【図５】従来の静電チャックの模式的縦断面図である。FIG. 5 is a schematic vertical sectional view of a conventional electrostatic chuck.
１ 導電体 ２ セラミックス溶射膜 ３ セラミックス溶射膜 ４ 冷却ブライン ５ 電圧端子 ６ 電流計 ７ 直流電源 ８ 静電チャック ９ 試料 1 Conductor 2 Ceramics Sprayed Film 3 Ceramics Sprayed Film 4 Cooling Brine 5 Voltage Terminal 6 Ammeter 7 DC Power Supply 8 Electrostatic Chuck 9 Sample
Claims (1)
絶縁膜との間に電圧を印加して前記絶縁膜上に試料を吸
着する静電チャックにおいて、 前記絶縁膜の前記試料に対する吸着部と他の一部又は全
部とが、体積固有抵抗率を異ならせる組成で構成されて
いることを特徴とする静電チャック。1. An electrostatic chuck in which a conductor is covered with an insulating film, and a voltage is applied between the sample and the insulating film to attract the sample onto the insulating film. An electrostatic chuck, characterized in that the part and the other part or all are composed of a composition that makes the volume specific resistivities different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3469993A JP3323924B2 (en) | 1993-01-29 | 1993-01-29 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3469993A JP3323924B2 (en) | 1993-01-29 | 1993-01-29 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06232243A true JPH06232243A (en) | 1994-08-19 |
| JP3323924B2 JP3323924B2 (en) | 2002-09-09 |
Family
ID=12421617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3469993A Expired - Lifetime JP3323924B2 (en) | 1993-01-29 | 1993-01-29 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3323924B2 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514243A (en) * | 1993-12-28 | 1996-05-07 | Matsushita Electric Industrial Co., Ltd. | Dry etching apparatus |
| WO1999025006A2 (en) * | 1997-11-06 | 1999-05-20 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| US6204489B1 (en) * | 1998-01-09 | 2001-03-20 | Ngk Insulators, Ltd. | Electrically heated substrate with multiple ceramic parts each having different volume restivities |
| US6263829B1 (en) | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
| US6581275B2 (en) | 2001-01-22 | 2003-06-24 | Applied Materials Inc. | Fabricating an electrostatic chuck having plasma resistant gas conduits |
| US7067178B2 (en) | 2001-05-25 | 2006-06-27 | Tokyo Electron Limited | Substrate table, production method therefor and plasma treating device |
| JP2007332462A (en) * | 2000-12-12 | 2007-12-27 | Tokyo Electron Ltd | Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment |
| JP2008258374A (en) * | 2007-04-04 | 2008-10-23 | Hitachi High-Technologies Corp | Wafer mounting electrode |
| WO2014013863A1 (en) * | 2012-07-17 | 2014-01-23 | 東京エレクトロン株式会社 | Bottom electrode and plasma treatment apparatus |
| US8980045B2 (en) | 2007-05-30 | 2015-03-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US9481608B2 (en) | 2005-07-13 | 2016-11-01 | Applied Materials, Inc. | Surface annealing of components for substrate processing chambers |
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1993
- 1993-01-29 JP JP3469993A patent/JP3323924B2/en not_active Expired - Lifetime
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5514243A (en) * | 1993-12-28 | 1996-05-07 | Matsushita Electric Industrial Co., Ltd. | Dry etching apparatus |
| US6721162B2 (en) | 1996-04-26 | 2004-04-13 | Applied Materials Inc. | Electrostatic chuck having composite dielectric layer and method of manufacture |
| US6108189A (en) * | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| US6414834B1 (en) | 1996-04-26 | 2002-07-02 | Applied Materials, Inc. | Dielectric covered electrostatic chuck |
| WO1999025006A2 (en) * | 1997-11-06 | 1999-05-20 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| WO1999025006A3 (en) * | 1997-11-06 | 1999-10-28 | Applied Materials Inc | Electrostatic chuck having improved gas conduits |
| US6204489B1 (en) * | 1998-01-09 | 2001-03-20 | Ngk Insulators, Ltd. | Electrically heated substrate with multiple ceramic parts each having different volume restivities |
| US6294771B2 (en) | 1998-01-09 | 2001-09-25 | Ngk Insulators, Ltd. | Electrically heated substrate with multiple ceramic parts each having different volume resitivities |
| US6263829B1 (en) | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
| JP2007332462A (en) * | 2000-12-12 | 2007-12-27 | Tokyo Electron Ltd | Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment |
| US6581275B2 (en) | 2001-01-22 | 2003-06-24 | Applied Materials Inc. | Fabricating an electrostatic chuck having plasma resistant gas conduits |
| CN1294636C (en) * | 2001-05-25 | 2007-01-10 | 东京毅力科创株式会社 | Substrate table, production method therefor and plasma treating deivce |
| US7067178B2 (en) | 2001-05-25 | 2006-06-27 | Tokyo Electron Limited | Substrate table, production method therefor and plasma treating device |
| US7544393B2 (en) | 2001-05-25 | 2009-06-09 | Tokyo Electron Limited | Substrate table, production method therefor and plasma treating device |
| US9481608B2 (en) | 2005-07-13 | 2016-11-01 | Applied Materials, Inc. | Surface annealing of components for substrate processing chambers |
| US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
| US11658016B2 (en) | 2005-10-31 | 2023-05-23 | Applied Materials, Inc. | Shield for a substrate processing chamber |
| US10347475B2 (en) | 2005-10-31 | 2019-07-09 | Applied Materials, Inc. | Holding assembly for substrate processing chamber |
| JP2008258374A (en) * | 2007-04-04 | 2008-10-23 | Hitachi High-Technologies Corp | Wafer mounting electrode |
| US8980045B2 (en) | 2007-05-30 | 2015-03-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
| KR20150035694A (en) * | 2012-07-17 | 2015-04-07 | 도쿄엘렉트론가부시키가이샤 | Bottom electrode and plasma treatment apparatus |
| US10269543B2 (en) | 2012-07-17 | 2019-04-23 | Tokyo Electron Limited | Lower electrode and plasma processing apparatus |
| JP2014022518A (en) * | 2012-07-17 | 2014-02-03 | Tokyo Electron Ltd | Lower electrode and plasma processing device |
| WO2014013863A1 (en) * | 2012-07-17 | 2014-01-23 | 東京エレクトロン株式会社 | Bottom electrode and plasma treatment apparatus |
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| Publication number | Publication date |
|---|---|
| JP3323924B2 (en) | 2002-09-09 |
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