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JPH06196548A - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JPH06196548A
JPH06196548A JP34489392A JP34489392A JPH06196548A JP H06196548 A JPH06196548 A JP H06196548A JP 34489392 A JP34489392 A JP 34489392A JP 34489392 A JP34489392 A JP 34489392A JP H06196548 A JPH06196548 A JP H06196548A
Authority
JP
Japan
Prior art keywords
mounting table
water cooling
cooling jacket
sample
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34489392A
Other languages
Japanese (ja)
Inventor
Yoichi Ueda
陽一 上田
Yoshimasa Matsuda
善雅 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP34489392A priority Critical patent/JPH06196548A/en
Publication of JPH06196548A publication Critical patent/JPH06196548A/en
Pending legal-status Critical Current

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Landscapes

  • Jigs For Machine Tools (AREA)
  • Registering Or Overturning Sheets (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

(57)【要約】 【目的】 溶射したセラミック膜の細孔に樹脂を含浸さ
せることにより、耐電圧を高めて試料の保持力が高い、
また試料を確実に保持し得る静電チャックを提供するこ
と。 【構成】 載置台1は金属円板電極2とその表面にセラ
ッミク材を溶射した絶縁膜の細孔に樹脂を含浸させた封
孔絶縁膜3とから構成されており、載置台1の中央裏面
側には端子4が突設されている。載置台1は、その表面
略中央に凹部を有する水冷ジャケット6の該凹部に載置
台1の略下半分を嵌合させている。水冷ジャケット6の
凹部中心部に形成した穴には下端にフランジ部5aを設け
た絶縁筒5が嵌合しており、この絶縁筒5には端子4が
フランジ部5aからねじ部4aの略半分を突出して挿入され
ている。絶縁筒5及び水冷ジャケット6は、端子4のね
じ部4aにナット7を螺合し、その締付によって載置台1
に密着されるべくなされており、水冷ジャケット6に密
着された載置台1は水冷ジャケット6内に配設され通流
孔6aへの冷媒の通流によって冷却されるべくなされてい
る。
(57) [Summary] [Purpose] By impregnating the pores of the sprayed ceramic film with resin, the withstand voltage is increased and the sample holding power is high.
Also, to provide an electrostatic chuck capable of reliably holding a sample. [Structure] The mounting table 1 is composed of a metal disk electrode 2 and a sealing insulating film 3 in which pores of an insulating film formed by spraying a ceramic material are impregnated with resin. The terminal 4 is provided on the side. The mounting table 1 has a lower half of the mounting table 1 fitted into the recess of a water cooling jacket 6 having a recess at the center of the surface thereof. An insulating cylinder 5 having a flange 5a at its lower end is fitted in a hole formed in the center of the recess of the water cooling jacket 6, and the terminal 4 is fitted to this insulating cylinder 5 from the flange 5a to approximately half the screw 4a. Is inserted so as to project. For the insulating cylinder 5 and the water cooling jacket 6, a nut 7 is screwed onto the threaded portion 4a of the terminal 4 and the mounting table 1 is tightened.
The mounting table 1 which is in close contact with the water cooling jacket 6 is arranged in the water cooling jacket 6 and is cooled by the flow of the refrigerant into the flow holes 6a.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体製造装置において
静電作用により試料を保持する静電チャックに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for holding a sample by electrostatic action in a semiconductor manufacturing apparatus.

【0002】[0002]

【従来の技術】半導体製造過程における薄膜形成または
ドライエッチング工程においては、ウェハ等の平板状の
試料に所要の成膜またはエッチングを施すために、試料
を載置する載置台上に試料を確実に密着させる必要があ
る。このような要求を満たす試料保持装置として、静電
作用を利用して試料を載置台上に密着・保持する静電チ
ャックが広く用いられている。
2. Description of the Related Art In a thin film forming process or a dry etching process in a semiconductor manufacturing process, a sample is surely placed on a mounting table on which a sample is mounted in order to perform required film formation or etching on a flat sample such as a wafer. Need to be in close contact. As a sample holding device that meets such requirements, an electrostatic chuck that uses an electrostatic action to bring a sample into close contact with and hold it on a mounting table is widely used.

【0003】図3は従来の静電チャックを示す模式的断
面図であり、図中1は試料を載置する載置台である。載
置台1は金属円板電極2とその表面に溶射法にてセラミ
ック材を100 μm〜500 μmの厚さに被覆した絶縁膜13
とから構成されている。載置台1の中央部裏面側には円
柱状の端子4が突設してあり、端子4はその下端にねじ
部4aを有している。そして端子4は静電力を誘起させる
べく直流電源(図示せず)に接続されている。
FIG. 3 is a schematic cross-sectional view showing a conventional electrostatic chuck, in which 1 is a mounting table on which a sample is mounted. The mounting table 1 includes a metal disk electrode 2 and an insulating film 13 whose surface is coated with a ceramic material to a thickness of 100 μm to 500 μm by a thermal spraying method.
It consists of and. A cylindrical terminal 4 is provided on the rear surface side of the center of the mounting table 1, and the terminal 4 has a screw portion 4a at the lower end thereof. The terminal 4 is connected to a DC power source (not shown) to induce an electrostatic force.

【0004】載置台1は、その表面略中央部に凹部を有
する水冷ジャケット6の該凹部に載置台1の略下半分を
嵌合させている。水冷ジャケット6の凹部中心に形成し
た穴には下端にフランジ部5aを設けた絶縁筒5が嵌合し
ており、この絶縁筒5には端子4がフランジ部5aからね
じ部4aの略半分を突出して挿入されている。即ち水冷ジ
ャケット6と端子4とは絶縁筒5にて絶縁されている。
絶縁筒5及び水冷ジャケット6は、端子4のねじ部4aに
ナット7を螺合し、その締付によって載置台1に密接さ
れるべくなされており、水冷ジャケット6に密接された
載置台1は水冷ジャケット6内に配設した通流孔6aへの
冷媒の通流によって冷却されるべくなされている。
The mounting table 1 has a lower half of the mounting table 1 fitted in the recess of a water cooling jacket 6 having a recess at the center of the surface thereof. An insulating cylinder 5 having a flange portion 5a at its lower end is fitted in a hole formed in the center of the recess of the water cooling jacket 6, and the terminal 4 has approximately half the flange portion 5a to the screw portion 4a. It is inserted protruding. That is, the water cooling jacket 6 and the terminal 4 are insulated by the insulating cylinder 5.
The insulating cylinder 5 and the water cooling jacket 6 are designed so that the nut 7 is screwed into the threaded portion 4a of the terminal 4, and the tightening of the nut 7 causes the mounting table 1 to come into close contact with the mounting table 1. It is designed to be cooled by the flow of the refrigerant into the flow hole 6a arranged in the water cooling jacket 6.

【0005】このように構成された静電チャックにて試
料を保持するには、試料を(図示せず)載置台1に載置
し、端子4へ正(負)の電圧を印加することによって金
属円板電極2表面に正(負)電荷を、また絶縁膜13を介
して試料の裏面に負(正)電荷を帯電させ、正負電荷に
よる静電作用にて試料を載置台1上に吸着保持させる。
In order to hold the sample with the electrostatic chuck constructed as described above, the sample is placed on the mounting table 1 (not shown) and a positive (negative) voltage is applied to the terminal 4. The surface of the metal disk electrode 2 is charged with a positive (negative) charge, and the back surface of the sample is charged with a negative (positive) charge through the insulating film 13, and the sample is adsorbed on the mounting table 1 by the electrostatic action of the positive and negative charges. Hold it.

【0006】[0006]

【発明が解決しようとする課題】ところでこのような従
来の静電チャックは、金属円板電極にアルミナ(Al2
3 )のようなセラミック粉末をプラズマにより溶射する
方法によって絶縁膜を被覆して構成されているため、少
ない工程で製造し得、また耐熱性及び耐久性が高いとい
う利点がある。しかしこのようにして被覆された絶縁膜
は、多くの微小な細孔が存在するハイポーラス状になっ
ているため、絶縁膜の耐電圧が低く、従って試料の保持
力が低い。またこの細孔を介して試料と金属円板電極と
の間で放電が起こり試料を保持し得なくなる虞があっ
た。本発明はかかる事情に鑑みてなされたものであっ
て、その目的とするところは溶射した絶縁膜の細孔に樹
脂を含浸させることにより、耐電圧を高めて試料の保持
力が高い、また試料を確実に保持し得る静電チャックを
提供するにある。
[Problems to be Solved by the Invention]
Conventional electrostatic chucks use alumina (Al2O
3) Ceramic powder is sprayed by plasma
Since it is configured by covering the insulating film by the method,
It can be manufactured with no process, and it has high heat resistance and durability.
There is an advantage. However, the insulating film coated in this way
Has a high porous shape with many small pores
Since the insulation film has a low withstand voltage,
The power is low. Also, through this pore, the sample and the metal disk electrode
There is a risk that discharge may occur between
It was The present invention has been made in view of such circumstances.
The purpose of this is to cover the pores of the sprayed insulation film.
Impregnation with oil increases the withstand voltage and holds the sample
An electrostatic chuck that has high force and can hold the sample securely
To provide.

【0007】[0007]

【課題を解決するための手段】本発明に係る静電チャッ
クにあっては、導電体にセラミック材を溶射してなる絶
縁膜を前記導電体に被覆してあり、被吸着物と前記導電
体との間に直流電圧を印加して前記被吸着物を吸着すべ
くなした静電チャックにおいて、前記溶射により生じた
前記絶縁膜の細孔に樹脂を含浸してある前記導電体を具
備することを特徴とする。
In an electrostatic chuck according to the present invention, an insulating film formed by spraying a ceramic material onto an electric conductor is coated on the electric conductor, and the object to be attracted and the electric conductor are covered. An electrostatic chuck configured to apply a direct current voltage between and to adsorb the object to be adsorbed, comprising the conductor in which pores of the insulating film generated by the thermal spray are impregnated with resin. Is characterized by.

【0008】[0008]

【作用】本発明の静電チャックは、セラミック材料を溶
射して形成した絶縁膜に存在する細孔に樹脂を含浸して
ある導電体を具備するため、絶縁膜の耐電圧が樹脂の絶
縁破壊強度に近い強さとなり、高電圧を印加して被吸着
物の吸着保持力を高めることができ、また絶縁膜の細孔
が封止されるため、被吸着物と導電体との間の放電が生
じず試料を保持しなくなる虞がない。
Since the electrostatic chuck of the present invention comprises the conductor in which the pores present in the insulating film formed by spraying the ceramic material are impregnated with the resin, the dielectric strength of the insulating film is the dielectric breakdown of the resin. The strength is close to the strength, and the high voltage can be applied to enhance the adsorption holding power of the adsorbent, and since the pores of the insulating film are sealed, the discharge between the adsorbent and the conductor can be increased. There is no possibility that the sample will not be retained due to the occurrence of

【0009】[0009]

【実施例】以下本発明をその実施例を示す図面に基づい
て具体的に説明する。図1は本発明の静電チャックを示
す模式的断面図であり、図中1は載置台である。載置台
1は金属円板電極2とその表面にセラミック材を溶射し
た絶縁膜の細孔に樹脂を含浸させた封孔絶縁膜3とから
構成されている。載置台1の中央部裏面側には円柱状の
端子4が突設してあり、端子4の下端ねじ部4aは静電力
を誘起させるべく直流電源(図示せず)に接続されてい
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. FIG. 1 is a schematic sectional view showing an electrostatic chuck of the present invention, in which 1 is a mounting table. The mounting table 1 is composed of a metal disk electrode 2 and a sealing insulating film 3 obtained by impregnating pores of an insulating film having a ceramic material sprayed thereon with a resin. A cylindrical terminal 4 is provided on the rear surface side of the center of the mounting table 1, and a lower end screw portion 4a of the terminal 4 is connected to a DC power source (not shown) to induce an electrostatic force.

【0010】載置台1は、その表面略中央部に凹部を有
する水冷ジャケット6の該凹部に載置台1の略下半分を
嵌合させている。水冷ジャケット6の凹部中心に形成し
た穴には下端にフランジ部5aを設けた絶縁筒5が嵌合し
ており、この絶縁筒5には端子4がフランジ部5aからね
じ部4aの略半分を突出して挿入されている。即ち水冷ジ
ャケット6と端子4とは絶縁筒5にて絶縁されている。
絶縁筒5及び水冷ジャケット6は、端子4のねじ部4aに
ナット7を螺合し、その締付によって載置台1に密接さ
れるべくなされており、水冷ジャケット6に密接された
載置台1は水冷ジャケット6内に配設した通流孔6aへの
冷媒の通流によって冷却されるべくなされている。
The mounting table 1 has a lower half of the mounting table 1 fitted into the recess of a water cooling jacket 6 having a recess at the center of the surface thereof. An insulating cylinder 5 having a flange portion 5a at its lower end is fitted in a hole formed in the center of the recess of the water cooling jacket 6, and the terminal 4 has approximately half the flange portion 5a to the screw portion 4a. It is inserted protruding. That is, the water cooling jacket 6 and the terminal 4 are insulated by the insulating cylinder 5.
The insulating cylinder 5 and the water cooling jacket 6 are designed so that the nut 7 is screwed into the threaded portion 4a of the terminal 4, and the tightening of the nut 7 causes the mounting table 1 to come into close contact with the mounting table 1. It is designed to be cooled by the flow of the refrigerant into the flow hole 6a arranged in the water cooling jacket 6.

【0011】このように構成された静電チャックにて試
料を保持するには、試料(図示せず)を載置台1に載置
し、端子4へ正(負)の電圧を印加することによって金
属円板電極2表面に正(負)電荷を、また絶縁膜3を介
して試料の裏面に負(正)電荷を帯電させ、正負電荷に
よる静電作用にて試料を載置台1上に吸着保持する。こ
のとき金属円板電極2を被覆している封孔絶縁膜3が前
述した如くセラッミク材を溶射した絶縁膜に生じた細孔
に樹脂を含浸させて構成されているため、セラミック材
の特性を有しながら更に耐電圧が高まって試料の保持力
が向上し、また封孔絶縁膜3は細孔が無いため試料と金
属円板電極2との間の放電の虞がなくなる。
In order to hold the sample with the electrostatic chuck constructed as described above, a sample (not shown) is placed on the mounting table 1 and a positive (negative) voltage is applied to the terminal 4. The surface of the metal disk electrode 2 is charged with positive (negative) charges, and the back surface of the sample is charged with negative (positive) charges through the insulating film 3, and the sample is adsorbed on the mounting table 1 by the electrostatic action of the positive and negative charges. Hold. At this time, since the sealing insulating film 3 covering the metal disk electrode 2 is formed by impregnating the pores generated in the insulating film sprayed with the ceramic material with the resin as described above, the characteristics of the ceramic material are The holding voltage of the sample is further improved by having it, and the holding power of the sample is improved, and since there is no pore in the sealing insulating film 3, there is no fear of discharge between the sample and the metal disk electrode 2.

【0012】次に本発明装置及び従来装置の耐電圧を比
較した結果について説明する。図2は耐電圧を測定する
状態を示す概略図であり、図中21はアースされた金属容
器である。金属容器21には水が入っており、その水中に
は電流計22の端子22aに接続した静電チャック10が載置
台1を下にして浸漬されている。そして電流計22の端子
22a 及び静電チャック10の接続部から端子22a の水上部
にわたってシリコン樹脂が塗布されている。電流計22の
他端は電圧計23を並接した直流電源24の一端に接続して
おり、直流電源24の他端は金属容器21の側壁に接続して
いる。そして直流電源24より静電チャック10と金属容器
21との間に印加する電圧を徐々に上げて、電流計22にて
0.5 mAが測定されたときの電圧を耐電圧として電圧計
23より読み取る。
Next, the results of comparison of the withstand voltage of the device of the present invention and the conventional device will be described. FIG. 2 is a schematic diagram showing a state in which the withstand voltage is measured, and 21 in the figure is a grounded metal container. The metal container 21 contains water, and the electrostatic chuck 10 connected to the terminal 22a of the ammeter 22 is immersed in the water with the mounting table 1 facing down. And the terminal of the ammeter 22
Silicon resin is applied from the connecting portion of the electrostatic chuck 10 to the upper portion of the water of the terminal 22a. The other end of the ammeter 22 is connected to one end of a DC power supply 24 in parallel with the voltmeter 23, and the other end of the DC power supply 24 is connected to the side wall of the metal container 21. Then, from the DC power supply 24, the electrostatic chuck 10 and the metal container
Gradually raise the voltage applied between the
Voltmeter with the voltage when 0.5 mA is measured as the withstand voltage
Read from 23.

【0013】表1はその結果を示したものである。従来
例はアルミニウム製の電極の表面にAl2 3 を溶射して
その厚みを300 μmとしたものを、本発明例はAl2 3
を溶射した後、更に減圧状態にて樹脂の溶融点に加熱し
てAl2 3 膜に生じた細孔に樹脂を含浸させて封孔し、
その後これを乾燥したものを、それぞれ10台づつ用い
た。このように細孔への樹脂の含浸を減圧状態にて行っ
ているため、細孔内の気体が取り除かれて樹脂が細孔内
全てに行き渡り、かつ溶融した樹脂が脱気されて気泡が
発生しない。なお本発明例1では樹脂としてエポキシ樹
脂を、また本発明例2ではシリコン樹脂を用いた。また
これらの樹脂の絶縁破壊強度は2〜10kV/0.1 mmで
ある。
Table 1 shows the results. Conventional example those in which the thickness thereof 300 [mu] m by spraying the Al 2 O 3 on the surface of the aluminum electrode, the inventive examples Al 2 O 3
After thermal spraying, the resin is impregnated into the pores generated in the Al 2 O 3 film by heating to the melting point of the resin under reduced pressure to seal the pores.
After that, 10 units each of which was dried were used. Since the resin is impregnated into the pores in a depressurized state in this way, the gas in the pores is removed and the resin spreads throughout the pores, and the molten resin is degassed to generate bubbles. do not do. Incidentally, in the present invention example 1, an epoxy resin was used as the resin, and in the present invention example 2, a silicone resin was used. The dielectric breakdown strength of these resins is 2 to 10 kV / 0.1 mm.

【0014】[0014]

【表1】 [Table 1]

【0015】表1から明らかな如く耐電圧は、従来例で
は試験した全てが100 V未満であったのに対し、本発明
例ではエポキシ樹脂にて封孔した場合は500 〜1,000
V、シリコン樹脂にて封孔した場合は700 〜2,000 Vで
あり、本発明例は従来例に比べ5〜20倍以上耐電圧が高
まっている。なお本実施例では樹脂としてエポキシ樹脂
及びシリコン樹脂を用いているが、これに限られるもの
でなく、所要の絶縁破壊強度及び耐熱性を有する樹脂で
あればよいことはいうまでもない。
As can be seen from Table 1, the withstand voltage was less than 100 V in all the tests in the conventional example, while it is 500 to 1,000 in the case of sealing with the epoxy resin in the example of the present invention.
V and 700 to 2,000 V when sealed with a silicone resin, and the withstand voltage of the present invention is 5 to 20 times higher than that of the conventional example. Although epoxy resin and silicone resin are used as the resin in this embodiment, it is needless to say that the resin is not limited to this and may be a resin having required dielectric breakdown strength and heat resistance.

【0016】[0016]

【発明の効果】以上詳述した如く本発明の静電チャック
にあっては、試料の保持力を向上することができるた
め、試料に対してプラズマ処理を正確に行うことができ
て製品の歩留まりが向上し、また試料を確実に保持する
ため装置の信頼性が高くなる等、本発明は優れた効果を
奏する。
As described above in detail, in the electrostatic chuck of the present invention, the holding power of the sample can be improved, so that the plasma processing can be accurately performed on the sample and the product yield can be improved. The present invention has excellent effects such as improved reliability and increased reliability of the device for reliably holding the sample.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の静電チャックを示す模式的断面図であ
る。
FIG. 1 is a schematic cross-sectional view showing an electrostatic chuck of the present invention.

【図2】耐電圧を測定する状態を示す概略図である。FIG. 2 is a schematic diagram showing a state in which a withstand voltage is measured.

【図3】従来の静電チャックを示す模式的断面図であ
る。
FIG. 3 is a schematic cross-sectional view showing a conventional electrostatic chuck.

【符号の説明】[Explanation of symbols]

1 載置台 2 金属円板電極 3 封孔絶縁膜 4 端子 5 絶縁筒 6 水冷ジャケット 7 ナット 1 Mounting table 2 Metal disk electrode 3 Sealing insulation film 4 Terminal 5 Insulation cylinder 6 Water cooling jacket 7 Nut

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H02N 13/00 D 8525−5H ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location H02N 13/00 D 8525-5H

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 導電体にセラミック材を溶射してなる絶
縁膜を前記導電体に被覆してあり、被吸着物と前記導電
体との間に直流電圧を印加して前記被吸着物を吸着すべ
くなした静電チャックにおいて、 前記溶射により生じた前記絶縁膜の細孔に樹脂を含浸し
てある前記導電体を具備することを特徴とする静電チャ
ック。
1. An insulating film formed by spraying a ceramic material onto an electric conductor is coated on the electric conductor, and a DC voltage is applied between the object to be adsorbed and the object to be adsorbed. In the electrostatic chuck made as described above, the electrostatic chuck is provided with the conductor in which pores of the insulating film generated by the thermal spraying are impregnated with a resin.
JP34489392A 1992-12-24 1992-12-24 Electrostatic chuck Pending JPH06196548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34489392A JPH06196548A (en) 1992-12-24 1992-12-24 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34489392A JPH06196548A (en) 1992-12-24 1992-12-24 Electrostatic chuck

Publications (1)

Publication Number Publication Date
JPH06196548A true JPH06196548A (en) 1994-07-15

Family

ID=18372814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34489392A Pending JPH06196548A (en) 1992-12-24 1992-12-24 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPH06196548A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067178B2 (en) 2001-05-25 2006-06-27 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
KR100772740B1 (en) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 Internal member of a plasma processing vessel
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7560376B2 (en) 2003-03-31 2009-07-14 Tokyo Electron Limited Method for adjoining adjacent coatings on a processing element
US7566379B2 (en) 2002-09-30 2009-07-28 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7566368B2 (en) 2002-09-30 2009-07-28 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
CN109294868A (en) * 2018-09-28 2019-02-01 杨帆 A kind of biological reaction container sampling device
JPWO2021049342A1 (en) * 2019-09-11 2021-09-27 株式会社クリエイティブテクノロジー Detachable device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067178B2 (en) 2001-05-25 2006-06-27 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
CN1294636C (en) * 2001-05-25 2007-01-10 东京毅力科创株式会社 Substrate table, production method therefor and plasma treating deivce
US7544393B2 (en) 2001-05-25 2009-06-09 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
US7566379B2 (en) 2002-09-30 2009-07-28 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7566368B2 (en) 2002-09-30 2009-07-28 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
KR100772740B1 (en) * 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 Internal member of a plasma processing vessel
US7560376B2 (en) 2003-03-31 2009-07-14 Tokyo Electron Limited Method for adjoining adjacent coatings on a processing element
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
CN109294868A (en) * 2018-09-28 2019-02-01 杨帆 A kind of biological reaction container sampling device
JPWO2021049342A1 (en) * 2019-09-11 2021-09-27 株式会社クリエイティブテクノロジー Detachable device
US11911863B2 (en) 2019-09-11 2024-02-27 Creative Technology Corporation Attachment and detachment device

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