JPH074718B2 - Electrostatic adsorption device - Google Patents
Electrostatic adsorption deviceInfo
- Publication number
- JPH074718B2 JPH074718B2 JP61128173A JP12817386A JPH074718B2 JP H074718 B2 JPH074718 B2 JP H074718B2 JP 61128173 A JP61128173 A JP 61128173A JP 12817386 A JP12817386 A JP 12817386A JP H074718 B2 JPH074718 B2 JP H074718B2
- Authority
- JP
- Japan
- Prior art keywords
- switch
- voltage
- adsorbed
- insulating layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Description
【発明の詳細な説明】 [発明の属する分野] 本発明は、半導体ウエハ等の導電性物質を真空中で保持
する静電吸着装置に関し、特に被吸着物の吸着中に印加
電圧極性を反転することにより吸着力の再現性を向上さ
せ、かつ被吸着物を装脱する際の残留吸着力を減少させ
た静電吸着装置に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chucking device for holding a conductive substance such as a semiconductor wafer in a vacuum, and in particular, reverses the applied voltage polarity during the chucking of an object to be attracted. Accordingly, the present invention relates to an electrostatic adsorption device that improves the reproducibility of the adsorption force and reduces the residual adsorption force when loading and unloading an object to be attracted.
[従来の技術] 近年、半導体製造プロセスはドライ化が急速に進み、エ
ッチング装置、アッシング装置、イオン注入装置、プラ
ズマCVD装置、電子ビームリソグラフィー、X線リソグ
ラフィー等では試料を10torr以下の真空中で処理する事
が増加している。[Prior Art] In recent years, semiconductor manufacturing processes have rapidly become dry, and samples are processed in a vacuum of 10 torr or less by etching equipment, ashing equipment, ion implantation equipment, plasma CVD equipment, electron beam lithography, X-ray lithography, etc. Things to do are increasing.
従来、試料の保持は機械的方法によるメカニカルチャッ
クや真空チャック等が多く用いられてきたが、メカニカ
ルチャックは試料全体をホルダに一様に保持することが
できず、また試料に損傷を与えるおそれがあるという欠
点があった。また、真空チャックは大気との圧力差を利
用するため上記ドライプロセス装置の真空チャンバー内
で使用することは不可能である。Conventionally, mechanical chucks and vacuum chucks by mechanical methods have been widely used for holding the sample, but the mechanical chuck cannot hold the entire sample uniformly in the holder and may damage the sample. There was a drawback. Further, since the vacuum chuck utilizes the pressure difference from the atmosphere, it cannot be used in the vacuum chamber of the dry process apparatus.
さらに、イオンビームエッチング装置、マグネトロン反
応性イオンエッチング装置、イオン注入装置では、試料
は高速イオンにさらされるため温度が上昇し、レジスト
等に熱損傷を与える。また、CVD装置では試料が温度に
よって生成膜の生成速度や、性質に強い影響を受ける
等、試料の温度調整をする必要があることが多い。Further, in an ion beam etching apparatus, a magnetron reactive ion etching apparatus, and an ion implantation apparatus, the sample is exposed to high-speed ions, so that the temperature thereof rises and the resist or the like is damaged by heat. Further, in a CVD apparatus, it is often necessary to adjust the temperature of the sample, for example, the temperature of the sample strongly affects the generation rate and properties of the formed film.
従って真空中で試料とホルダとの一様な熱的コンタクト
をとることができる静電力を利用した静電吸着は非常に
有利である。Therefore, electrostatic adsorption using electrostatic force capable of making uniform thermal contact between the sample and the holder in vacuum is very advantageous.
第3図は、この静電吸着の原理を示す。同図において、
1は電極、2は絶縁物、3は導電性物質からなる被吸着
物、4はスイッチ、5は直流電源である。FIG. 3 shows the principle of this electrostatic attraction. In the figure,
Reference numeral 1 is an electrode, 2 is an insulator, 3 is an object to be adsorbed made of a conductive substance, 4 is a switch, and 5 is a DC power source.
上記構成において、電極1上に絶縁物2を介して被吸着
物3を設置し、スイッチ4を投入して電極1と被吸着物
3の間に電源5により電圧を印加すると、電極1と被吸
着物3の間に F(N)=1/2・εoεs(V/d)2S なる吸着力が発生する。ここで、εoは真空中の誘電
率、εsは絶縁物2の比誘電率、Vは電源5の電圧、d
は絶縁物2の厚さ、そしてSは電極1の面積である。In the above structure, when the object to be adsorbed 3 is placed on the electrode 1 via the insulator 2, the switch 4 is turned on and a voltage is applied between the electrode 1 and the object to be adsorbed 3 by the power supply 5, the electrode 1 and the object to be adsorbed are An adsorbing force of F ( N ) = 1/2 · εoεs (V / d) 2 S is generated between the adsorbates 3. Here, εo is the permittivity in vacuum, εs is the relative permittivity of the insulator 2, V is the voltage of the power source 5, and d
Is the thickness of the insulator 2 and S is the area of the electrode 1.
しかし、従来の静電吸着装置では、被吸着物3を吸着し
た場合、スイッチ4を切っても絶縁物2に電荷が残り、
吸着力が長時間残ってしまう。また、吸着力が減少する
時間にもばらつきがある等の問題があった。However, in the conventional electrostatic attracting device, when the attracted object 3 is attracted, the electric charge remains in the insulator 2 even if the switch 4 is turned off,
The adsorption power remains for a long time. In addition, there is a problem that the time for which the suction force is reduced varies.
第3図の装置において、実際にスイッチ4を切った後、
吸着力が1g/cm2に減少するまでの時間を測定した。この
時の絶縁物2は厚さ50μ/mのAl2O3溶射膜である。In the device of FIG. 3, after actually turning off the switch 4,
The time until the adsorption force was reduced to 1 g / cm 2 was measured. At this time, the insulator 2 is an Al 2 O 3 sprayed film having a thickness of 50 μ / m.
以上のように非常に長い時間かかる。 As mentioned above, it takes a very long time.
[発明の目的] 本発明は、上述従来例の問題点に鑑みてなされたもの
で、静電吸着装置における残留吸着力を速やかに減少さ
せることを可能にし、被吸着物の着脱動作を速やかに行
なえるようにすることを目的とする。[Object of the Invention] The present invention has been made in view of the problems of the above-described conventional example, and makes it possible to quickly reduce the residual attraction force in the electrostatic attraction device, and to quickly perform the attachment / detachment operation of the object to be attracted. The purpose is to be able to do.
[発明の概要] この目的を達成するため本発明の静電吸着装置は、被吸
着物が載置される載置面を有する絶縁層と、前記絶縁層
の載置面に分極電荷を発生させる対をなす電極と、前記
電極に印加される電圧を発生する直流電源と、前記直流
電源からの電圧を前記電極へ印加するために切り換えら
れる第1スイッチ手段と、前記第1スイッチ手段が電圧
印加側に切り換えられている間に前記印加電圧の極性を
少なくとも1回以上反転させるために切り換えられる第
2スイッチ手段を有する。[Summary of the Invention] In order to achieve this object, an electrostatic attraction device of the present invention is configured to generate an insulating layer having a placement surface on which an object to be attracted is placed, and to generate polarized charges on the placement surface of the insulating layer. A pair of electrodes, a DC power supply that generates a voltage applied to the electrodes, a first switch means that is switched to apply a voltage from the DC power supply to the electrodes, and the first switch means applies a voltage. It has a second switch means that is switched to reverse the polarity of the applied voltage at least once more while it is switched to the side.
これによれば、第1スイッチ手段が電圧印加側に切り換
えられている間に、第2スイッチ手段により印加電圧の
極性が少なくとも1回以上反転されるため、電極への印
加電圧の遮断後も絶縁層と被吸着物の間に残存する残留
吸着力(残留電荷)が低減され、被吸着物は速やかに着
脱される。また、残留電荷による次回以降の吸着時の吸
着力の不安定化も回避される。さらに、被吸着物の吸着
中に吸着力が増加し続けることがないので、被吸着物を
長時間吸着するような場合にも、その吸着力により被吸
着物や絶縁層等が破壊されてしまうおそれもない。According to this, since the polarity of the applied voltage is inverted at least once by the second switch means while the first switch means is being switched to the voltage application side, the insulation is maintained even after the voltage applied to the electrodes is cut off. The residual adsorptive force (residual charge) remaining between the layer and the object to be adsorbed is reduced, and the object to be adsorbed is quickly attached and detached. Further, destabilization of the adsorption force at the time of adsorption after the next time due to the residual charge is also avoided. Furthermore, since the adsorption force does not continue to increase during the adsorption of the adsorption target, even when the adsorption target is adsorbed for a long time, the adsorption force will destroy the adsorption target or the insulating layer. There is no fear.
[実施例] 以下、図面を参照しながら、本発明の実施例を説明す
る。なお、従来例と同一または対応する部品については
同一の符号で表す。Embodiments Embodiments of the present invention will be described below with reference to the drawings. It should be noted that parts that are the same as or correspond to those in the conventional example are denoted by the same reference numerals.
第1図は、本発明の一実施例に係る静電吸着装置の要部
構成を示す。同図において、2aはウエハを支持する為の
チャック本体であり、図のように絶縁物2と電極1を内
蔵している。絶縁物2の上部、チャック本体2aの上部外
周には、ウエハ3が載置された時にウエハ3と接するよ
うに設置された電極3aがある。従って、ウエハ3載置時
は電極3aとウエハ3は常に同じ電位を保つ。即ち、本実
施例では直流電源5は電極1と直接ウエハ3に電圧を印
加することにある。6は第1のスイッチで、印加電圧の
オン・オフを行なう。7は補助のスイッチで、第1のス
イッチ6と連動しており、第1のスイッチ6がオン(閉
路)であるときは、補助のスイッチ7はオフ(開路)と
なり、第1のスイッチ6がオフであるときは補助のスイ
ッチ7はオンとなる。8は第2のスイッチで、電極1と
被吸着物3間の電圧極性を一定時間毎に反転するタイマ
スイッチである。FIG. 1 shows a main configuration of an electrostatic chucking device according to an embodiment of the present invention. In the figure, 2a is a chuck body for supporting a wafer, and as shown in the figure, it contains an insulator 2 and an electrode 1. An electrode 3a is installed on the upper part of the insulator 2 and on the outer periphery of the upper part of the chuck body 2a so as to be in contact with the wafer 3 when the wafer 3 is placed. Therefore, when the wafer 3 is placed, the electrode 3a and the wafer 3 always maintain the same potential. That is, in this embodiment, the DC power supply 5 applies a voltage directly to the electrode 1 and the wafer 3. A first switch 6 turns the applied voltage on and off. Reference numeral 7 denotes an auxiliary switch, which is interlocked with the first switch 6, and when the first switch 6 is on (closed), the auxiliary switch 7 is off (open) and the first switch 6 is turned on. When it is off, the auxiliary switch 7 is on. Reference numeral 8 denotes a second switch, which is a timer switch for reversing the voltage polarity between the electrode 1 and the object to be adsorbed 3 at regular intervals.
上記構成において、絶縁物2の上に被吸着物3であるウ
エハを置き、第1のスイッチ6をオンにする。すると直
流電源5から電極1とウエハ3に電圧が印加される。こ
の際、補助のスイッチ7はオフにされている。印加電圧
と絶縁物の種類によって決まった一定時間がたつと第2
のスイッチ8が動作して電極1とウエハ3に印加される
電圧の極性が反転される。以後、一定時間毎に第2のス
イッチ8により印加電圧の極性が反転されていく。In the above structure, the wafer to be attracted 3 is placed on the insulator 2 and the first switch 6 is turned on. Then, a voltage is applied from the DC power supply 5 to the electrode 1 and the wafer 3. At this time, the auxiliary switch 7 is turned off. Second after a certain period of time determined by the applied voltage and the type of insulator
The switch 8 operates to reverse the polarity of the voltage applied to the electrode 1 and the wafer 3. After that, the polarity of the applied voltage is inverted by the second switch 8 at regular intervals.
ウエハ3を取り外したい時は、第1のスイッチ6をオフ
にすれば、第1のスイッチ6と連動している補助のスイ
ッチ7により電極1とウエハ3が短絡され吸着力が減少
する。When the wafer 3 is desired to be removed, the first switch 6 is turned off, and the auxiliary switch 7 interlocking with the first switch 6 short-circuits the electrode 1 and the wafer 3 to reduce the attraction force.
下表は、本実施例において実験を行なった結果得られた
もので、スイッチ6をオフした後吸着力が実質的に零と
なるまでの時間を1秒としたときの各印加電圧ごとの必
要最小な電圧極性反転時間を示す。The following table is obtained as a result of conducting an experiment in this embodiment, and is required for each applied voltage when the time until the adsorption force becomes substantially zero after the switch 6 is turned off is 1 second. It shows the minimum voltage polarity reversal time.
以上の値は、静電吸着装置の誘電体2が、第3図のもの
と同様の、Al2O3のプラズマ溶射膜で厚さ50μmの時の
ものである。 The above values are obtained when the dielectric 2 of the electrostatic attraction device is a plasma sprayed film of Al 2 O 3 having a thickness of 50 μm, which is similar to that shown in FIG.
吸着中、電圧極性反転時に一瞬吸着力が減少するが、お
およそ1秒以内に吸着力は復帰する。During attraction, the attraction force momentarily decreases when the voltage polarity is reversed, but the attraction force returns within about 1 second.
第2図は、本発明の他の実施例に係る静電吸着装置の要
部構成を示す。同図の装置は、第1図の装置に対し、一
対の電極1a,1bを共に絶縁物2に対し載置面と反対側の
面に配置し、これらの電極1a,1bに電圧を印加するよう
にしている。その作用は、上述した第1図の装置の場合
と全く同様である。FIG. 2 shows a main configuration of an electrostatic attraction device according to another embodiment of the present invention. The apparatus shown in the figure is different from the apparatus shown in FIG. 1 in that a pair of electrodes 1a and 1b are arranged on the surface opposite to the mounting surface with respect to the insulator 2 and a voltage is applied to these electrodes 1a and 1b. I am trying. The operation is exactly the same as in the case of the device shown in FIG.
また、従来の静電吸着装置を用いた場合、絶縁物2の残
留電荷により吸着力の再現性が非常に悪く、この問題を
解決するために、「被吸着物を1回吸着する毎に、印加
電圧極性を反転する。」ことが提案されている(特開昭
58−114437号)。しかし、この方法では吸着力の安定化
は得られるが、任意の時に吸着力を減少させ、速やかに
被吸着物を取り外すことは困難であった。Further, when the conventional electrostatic adsorption device is used, the reproducibility of the adsorption force is very poor due to the residual electric charge of the insulator 2, and in order to solve this problem, “each time the object to be attracted is adsorbed once, The polarity of the applied voltage is reversed. "
58-114437). However, although this method can stabilize the adsorption force, it is difficult to reduce the adsorption force at any time and quickly remove the object to be adsorbed.
本実施例では、被吸着物を吸着中に所定の時間間隔で印
加電圧の極性を反転していくため、この吸着力について
も高い再現性を得ることができる。In this embodiment, since the polarity of the applied voltage is reversed at a predetermined time interval during the adsorption of the object to be adsorbed, it is possible to obtain a high reproducibility of the adsorption force.
なお、上述した実施例では絶縁物として酸化アルミニウ
ムの溶射膜を用いたが、本発明はこれに限定されるもの
ではなく、他の縁物も使用することができる。Although the sprayed film of aluminum oxide was used as the insulating material in the above-described embodiments, the present invention is not limited to this, and other edge materials can be used.
[発明の効果] 以上説明したように、本発明によれば、被吸着物の吸着
中に印加電圧極性を反転することにより、被吸着物の脱
着を速やかに行なうことができ、しかも吸着力の安定化
を得ることができる。[Effects of the Invention] As described above, according to the present invention, by reversing the polarity of the applied voltage during the adsorption of the object to be adsorbed, the object to be adsorbed can be quickly desorbed and the adsorption force can be improved. Stabilization can be obtained.
第1図は、本発明の一実施例に係る静電吸着装置の要部
構成図、 第2図は、本発明の他の実施例に係る静電吸着装置の要
部構成図、 第3図は、従来の静電吸着装置の要部構成図である。 1,1a,1b:電極、2:絶縁物、3:被吸着物、5:直流電源、6:
第1のスイッチ、7:補助スイッチ、8:第2のスイッチ。FIG. 1 is a main part configuration diagram of an electrostatic adsorption device according to an embodiment of the present invention, FIG. 2 is a main part configuration diagram of an electrostatic adsorption device according to another embodiment of the present invention, and FIG. FIG. 4 is a configuration diagram of a main part of a conventional electrostatic attraction device. 1,1a, 1b: Electrode, 2: Insulator, 3: Adsorbed object, 5: DC power supply, 6:
First switch, 7: auxiliary switch, 8: second switch.
Claims (5)
層と、前記絶縁層の載置面に分極電荷を発生させる対を
なす電極と、前記電極に印加される電圧を発生する直流
電源と、前記直流電源からの電圧を前記電極へ印加する
ために切り換えられる第1スイッチ手段と、前記第1ス
イッチ手段が電圧印加側に切り換られている間に前記印
加電圧の極性を少なくとも1回以上反転させるために切
り換えられる第2スイッチ手段を有することを特徴とす
る静電吸着装置。1. An insulating layer having a mounting surface on which an object to be attracted is mounted, a pair of electrodes for generating polarized charges on the mounting surface of the insulating layer, and a voltage applied to the electrode. Direct current power supply, a first switch means that is switched to apply a voltage from the direct current power supply to the electrode, and a polarity of the applied voltage while the first switch means is switched to the voltage application side. An electrostatic adsorption device comprising a second switch means that is switched to reverse at least once.
換えられるタイマスイッチを有することを特徴とする特
許請求の範囲第1項記載の静電吸着装置。2. The electrostatic attraction device according to claim 1, wherein the second switch means has a timer switch that is switched at predetermined time intervals.
置された際、前記電極の一方が前記被吸着物に接するこ
とを特徴とする特許請求の範囲第1項記載の静電吸着装
置。3. The claim 1 according to claim 1, wherein one of the electrodes is in contact with the object to be adsorbed when the object to be adsorbed is placed on the mounting surface of the insulating layer. Electrostatic adsorption device.
と反対側の面で前記被吸着物に対面して配置されている
ことを特徴とする特許請求の範囲第1項記載の静電吸着
装置。4. The static electrode according to claim 1, wherein each of the electrodes is arranged so as to face the object to be adsorbed on a surface opposite to a mounting surface of the insulating layer. Electroadsorption device.
あることを特徴とする特許請求の範囲第1項記載の静電
吸着装置。5. The electrostatic adsorption device according to claim 1, wherein the insulating layer is a sprayed film of aluminum oxide.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61128173A JPH074718B2 (en) | 1986-06-04 | 1986-06-04 | Electrostatic adsorption device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61128173A JPH074718B2 (en) | 1986-06-04 | 1986-06-04 | Electrostatic adsorption device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62287950A JPS62287950A (en) | 1987-12-14 |
JPH074718B2 true JPH074718B2 (en) | 1995-01-25 |
Family
ID=14978213
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61128173A Expired - Fee Related JPH074718B2 (en) | 1986-06-04 | 1986-06-04 | Electrostatic adsorption device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH074718B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004030197A1 (en) * | 2002-09-27 | 2004-04-08 | Tsukuba Seiko Ltd. | Electrostatic holding device and electrostatic tweezers using same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0330786U (en) * | 1989-07-27 | 1991-03-26 | ||
JPH0345188U (en) * | 1989-09-08 | 1991-04-25 | ||
JP2576294B2 (en) * | 1991-02-04 | 1997-01-29 | 富士通株式会社 | Wafer suction / release method for electrostatic chuck |
JP2636590B2 (en) * | 1991-09-17 | 1997-07-30 | 株式会社日立製作所 | Electrostatic suction device |
JP6324047B2 (en) * | 2013-12-10 | 2018-05-16 | 国立大学法人信州大学 | Gel actuator |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605539A (en) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | Electrostatic absorber |
JPS614611A (en) * | 1984-06-15 | 1986-01-10 | Honda Motor Co Ltd | Drill reamer |
-
1986
- 1986-06-04 JP JP61128173A patent/JPH074718B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004030197A1 (en) * | 2002-09-27 | 2004-04-08 | Tsukuba Seiko Ltd. | Electrostatic holding device and electrostatic tweezers using same |
Also Published As
Publication number | Publication date |
---|---|
JPS62287950A (en) | 1987-12-14 |
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