JPH041069B2 - - Google Patents
Info
- Publication number
- JPH041069B2 JPH041069B2 JP60259986A JP25998685A JPH041069B2 JP H041069 B2 JPH041069 B2 JP H041069B2 JP 60259986 A JP60259986 A JP 60259986A JP 25998685 A JP25998685 A JP 25998685A JP H041069 B2 JPH041069 B2 JP H041069B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- photochemical reaction
- light source
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 46
- 238000006552 photochemical reaction Methods 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 18
- 238000003672 processing method Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- 230000008569 process Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子デバイスの製造プロセスに用いら
れる光化学反応を利用した加工方法及び装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a processing method and apparatus using photochemical reactions used in the manufacturing process of electronic devices.
LSI製造プロセスに光化学反応を利用する光
CVDや光エツチング等の光プロセス技術が、LSI
の高集積化に伴うプロセスの低温化、低損傷化、
簡素化等の要請に応えうる有力技術の候補として
注目されている。
Light that uses photochemical reactions in the LSI manufacturing process
Optical process technologies such as CVD and optical etching are
Lower process temperatures and less damage associated with higher integration,
It is attracting attention as a promising technology candidate that can meet demands for simplification.
このうちレジストプロセスを不要とするパター
ニングの簡素化は、将来のLSIプロセスへの適用
形態として再も期待が強いもののひとつである。
このような例は、特開昭57−26445「レーザアニー
ル装置」に提案され、また、レーザエツチングに
ついて実験的に実証した例が「第16回固体素子材
料コンフアレンス」（1984、神戸）のアブストラ
クトの441頁以降に記載されている。 Among these, the simplification of patterning that eliminates the need for a resist process is one of the methods that has strong expectations as a form of application to future LSI processes.
Such an example was proposed in Japanese Patent Application Laid-Open No. 57-26445 "Laser Annealing Apparatus", and an example of experimentally demonstrated laser etching is in the abstract of "16th Solid State Element Materials Conference" (1984, Kobe). It is described from page 441 onwards.
しかしながら、従来の光プロセスによるレジス
トレスのパターニング技術においては、照射光を
マスクを通してパターニングして基板上に転写す
る必要があるため、通常のレジストプロセスのリ
ソグラフイー工程と同様、微細な目合わせをする
必要がある。このため、光学的に関連する所要技
術レベルは、従来の光プロセスによつても緩和さ
れず、このことが光プロセスの導入を遅れさせる
要因のひとつになつている。しかも、光化学反応
の高度化と、デバイスの微細化とによつて、光プ
ロセス用の光源波長は短波長化される傾向にある
が、このことが光学系関連技術の所要技術レベル
をむしろ高める方向にさえ働いている。このた
め、光プロセスにおいては、マスクパターン転写
に頼る従来形のパターニング技術から離れ、プロ
セス途中の基板のパターンを利用したセルフアラ
イン技術を何らかの形で導入して、前述の光学系
に係る所要技術レベルを大幅に下げることが必要
である。
However, in resistless patterning technology using conventional optical processes, it is necessary to pattern the irradiated light through a mask and transfer it onto the substrate, so it is necessary to perform fine alignment in the same way as in the lithography process of normal resist processes. There is a need. For this reason, the required level of optically related technology cannot be alleviated even by conventional optical processes, and this is one of the factors that delays the introduction of optical processes. Moreover, with the advancement of photochemical reactions and the miniaturization of devices, the wavelength of the light source for optical processes tends to become shorter, and this is likely to increase the required level of optical system-related technology. even working on it. For this reason, in the optical process, we are moving away from conventional patterning technology that relies on mask pattern transfer and introducing some form of self-alignment technology that utilizes the pattern on the substrate during the process. It is necessary to significantly lower the
本発明の目的は、このような問題を解決し、セ
ルフアラインによりデバイスの平坦化に有効な光
化学反応加工方法およびその加工装置を提供する
ことにある。 An object of the present invention is to solve such problems and provide a photochemical reaction processing method and processing apparatus that are effective for planarizing devices by self-alignment.
第１の本発明の構成は、ガスの雰囲気中に置か
れた基板の表面の所望部に、光を照射して光化学
反応に基づく加工を施す光化学反応加工方法にお
いて、前記の光を平行光束して前記基板に斜めに
照射し、かつ前記基板に垂直な軸を回転軸として
前記基板と前記の光とを相対的に回転させること
を特徴とする。
The first aspect of the present invention is a photochemical reaction processing method in which a desired part of the surface of a substrate placed in a gas atmosphere is irradiated with light to perform processing based on a photochemical reaction, in which the light is converted into a parallel beam. The light beam is irradiated obliquely onto the substrate, and the substrate and the light are relatively rotated about an axis perpendicular to the substrate as a rotation axis.
第２の本発明の構成は、光源と、この光源から
の光を入射窓を介して基板上に導入しかつこの光
照射により光化学反応に生ずるガス雰囲気中にそ
の基板を保持する加工セルと、前記光源からの光
を平行光にして前記入射窓を介して前記基板面の
所望個所に導く光学系とを含む光化学反応加工装
置において、前記基板面の垂直軸に対し前記平行
光が傾斜されてその基板面を照射するようこの基
板を保持する手段と、この基板を前記垂直軸のま
わりに回転させる回転手段とを備えることを特徴
とする。 A second configuration of the present invention includes a light source, a processing cell that introduces light from the light source onto the substrate through an entrance window and holds the substrate in a gas atmosphere that is generated in a photochemical reaction by the light irradiation; and an optical system that converts light from the light source into parallel light and guides it to a desired location on the substrate surface through the entrance window, wherein the parallel light is tilted with respect to a vertical axis of the substrate surface. It is characterized by comprising means for holding the substrate so as to irradiate its surface, and rotating means for rotating the substrate about the vertical axis.
本発明の構成により、光化学反応誘起用の照射
光を平行光にして基板面に斜めに入射させてい
る。この基板には、既に前工程による凹凸パター
ンができているものとすると、光の直進性により
基板上には凹部に光の当らない影を生ずる。この
影の部分と、光が照射されている部分とでは、基
板表面の光化学反応の生じ方に差を生じる。しか
も、この反応の選択性は当然セルフアラインに生
じる。
According to the configuration of the present invention, the irradiation light for inducing a photochemical reaction is made into parallel light and is made obliquely incident on the substrate surface. Assuming that this substrate already has a pattern of protrusions and recesses formed in the previous process, the rectilinearity of light causes a shadow on the substrate where no light hits the concave portions. There is a difference in how the photochemical reaction occurs on the substrate surface between this shadowed area and the area irradiated with light. Moreover, the selectivity of this reaction naturally occurs in self-alignment.
本発明では、さらに照射光の基板への入射方向
を基板の垂直軸のまわりで回転（才差運動）させ
ることにより、この光化学反応のセルフアライン
な選択性を一層強調ないしは変形させている。即
ち、深いトレンチやバイアホールの底部付近で
は、この才差運動によつても、光は常に照射され
ないが、底部よりも上部の部分や、例えば配線に
よる段差の部分にできる影の部分は、この才差運
動の周期のある一部の時間で生じ、その他の時間
では光が当たり、また平坦部には従来通り常時光
が当たる。この段差付近の場所の違いによる照射
積分時間の差、即ち光化学反応量の差は、次に述
べるように、段差被覆性の向上やバイアホール埋
込みなど、マイクロデバイスに重要な平坦化に極
めて有効な作用を及ぼす。 In the present invention, the self-aligned selectivity of this photochemical reaction is further emphasized or modified by rotating (precession) the direction of incidence of the irradiation light on the substrate around the vertical axis of the substrate. In other words, near the bottom of a deep trench or via hole, light is not always irradiated due to this precession, but the shadow part that forms above the bottom or, for example, in a step caused by wiring, is affected by this precession. It occurs during a certain part of the period of precession, and is exposed to light at other times, and the flat area is always exposed to light as before. The difference in irradiation integration time, that is, the difference in the amount of photochemical reaction due to the difference in location near this step, is extremely effective for planarization, which is important for microdevices, such as improving step coverage and filling via holes, as described below. exert an effect.
すなわち、まず光エツチングの場合には、影の
部分ではエツチングが生じないため基板面の凸部
のみがエツチングにより平坦化される。 That is, in the case of optical etching, only the convex portions of the substrate surface are flattened by etching because no etching occurs in the shadowed portions.
次に、この光エツチングと組合わせて、同時に
成膜プロセスを行えば埋め込み成膜が可能であ
る。この場合の成膜には特段光の効果を利用しな
くて良い。 Next, if a film formation process is performed simultaneously in combination with this photoetching, buried film formation is possible. In this case, it is not necessary to use special effects of light for film formation.
さらに、光化学反応の反応種が光により基板表
面から脱離する光脱離現象を利用した場合、これ
らの例とは逆に、光の照射量の多い場所での光化
学反応が抑制され、むしろ影の部分での反応が進
行するので、熱化学反応プロセスを光の照射によ
り凹部のみに限定することができる。このため、
成膜技術と組合せることにより、やはり埋込み成
膜が可能となる。 Furthermore, if we utilize the photo-elimination phenomenon in which the reactive species of a photochemical reaction are desorbed from the substrate surface by light, the photochemical reaction will be suppressed in areas with a high amount of light irradiation, contrary to these examples. Since the reaction proceeds in the region, the thermochemical reaction process can be limited to only the concave portion by irradiation with light. For this reason,
By combining this with film-forming technology, embedded film-forming becomes possible.
以下、図面を用いて本発明を詳細に説明する。 Hereinafter, the present invention will be explained in detail using the drawings.
第１図は本発明の一実施例の構成図である。紫
外レーザからなる光源１からの出射光を光学系２
により所要のビーム径を有した平行光に交換し
て、反応セル３の入射窓４から基板５に向け入射
させる。この入射光は一様な強度分布を有する平
行光にするため、光学系２はリソグラフイー用ス
テツパの超精密な光学系や目合わせ機構が不要
で、極めて簡単な構成でよい。 FIG. 1 is a block diagram of an embodiment of the present invention. Optical system 2 transmits light emitted from light source 1 consisting of an ultraviolet laser.
The collimated beam is exchanged with a parallel beam having a required beam diameter, and the parallel beam is made to enter the substrate 5 through the entrance window 4 of the reaction cell 3. Since this incident light is made into parallel light having a uniform intensity distribution, the optical system 2 does not require an ultra-precise optical system or an alignment mechanism of a stepper for lithography, and may have an extremely simple configuration.
基板５は傾斜ステージ７により、入射光が所定
の入射角となるように傾き角をセツトされる。次
いで、回転ステージ８によりプロセス中に基板５
を回転しうるようにしている。さらに基板はヒー
タ９に装着して、加熱可能な構成としている。こ
のため、反応セル３の底部から、XYステージ
６、傾斜ステージ７、回転ステージ８、ヒータ９
の順番で結合して基板保持部を構成する。XYス
テージ６は、傾斜ステージ７の動作による基板の
中心の水平移動を入射光に対し補正するために用
いる。さらにこの反応セル３に、光化学反応を誘
起するガスを供給するガス供給系１０と排ガス処
理系１１とを接続する。 The tilt angle of the substrate 5 is set by a tilt stage 7 so that the incident light has a predetermined angle of incidence. Next, the substrate 5 is rotated during the process by the rotation stage 8.
can be rotated. Further, the substrate is attached to a heater 9 so that it can be heated. Therefore, from the bottom of the reaction cell 3, the XY stage 6, tilting stage 7, rotation stage 8, heater 9
The substrate holder is constructed by combining the substrates in this order. The XY stage 6 is used to correct the horizontal movement of the center of the substrate due to the operation of the tilting stage 7 with respect to the incident light. Furthermore, this reaction cell 3 is connected to a gas supply system 10 that supplies a gas that induces a photochemical reaction and an exhaust gas treatment system 11.
以下、具体的なプロセスへの適用例について具
体的に説明する。 Below, an example of application to a specific process will be explained in detail.
第２図は本発明をＷのバイアホール埋込みに適
用した場合の基板の断面図である。この場合、絶
縁膜２３で覆われた下層のＡ配線２１を有する基
板５にバイアホール２２を開け、Ｗを埋め込む。
通常はガス供給系１０からWF6とH2ガスとを反
応セル３に供給して、Ａの還元反応を利用してＷ
を埋め込むが、その場合には埋め込み可能なＷの
厚みが非常に薄いため、アスペクト比の大きなバ
イアホールの埋込みには使えない。 FIG. 2 is a cross-sectional view of a substrate when the present invention is applied to filling via holes with W. In this case, a via hole 22 is opened in the substrate 5 having the lower layer A wiring 21 covered with an insulating film 23 and filled with W.
Normally, WF 6 and H 2 gas are supplied from the gas supply system 10 to the reaction cell 3, and W is converted using the reduction reaction of A.
However, in that case, the thickness of W that can be embedded is very thin, so it cannot be used to fill via holes with a large aspect ratio.
これに対し本実施例では、還元反応のような基
板選択性のあるプロセスに代えて、WF6のみを
用いた通常の熱CVDを行い、それに加えてガス
供給系１０からＷのエツチング用のCL4ガスを同
時に供給して、ArＦエキシマレーザを光源１に
用い、バイアホール以外の部分でのＷのCVDを
光エツチング反応により抑止し、影となるバイア
ホール部にのみセルフアラインにＷを深く埋め込
むことができる。 In contrast, in this example, instead of a process with substrate selectivity such as a reduction reaction, ordinary thermal CVD using only WF 6 is performed, and in addition, CL for etching of W is supplied from the gas supply system 10. By simultaneously supplying four gases and using an A r F excimer laser as light source 1, CVD of W in areas other than the via hole is suppressed by photo-etching reaction, and W is applied in a self-aligned manner only to the shadowed via hole area. Can be embedded deeply.
埋め込まれた金属２４の断面形状は、入射光２
５の光線と基板５の表面とのなす傾斜角θで決る
影の部分に対応し、高いアスペクト比のバイアホ
ールに対しても、後工程に支障を与えない程充分
深く埋め込むことができる。なお、光源１の波長
によつては、WF6の光CVDも生ずるが、本実施
例では、その場合には平坦部のＷのCVDが生じ
ないように、エツチングガスの濃度を数Torr程
度に高く設定している。 The cross-sectional shape of the embedded metal 24 is
Corresponding to the shadow part determined by the inclination angle θ between the light beam 5 and the surface of the substrate 5, even a via hole with a high aspect ratio can be buried sufficiently deep so as not to interfere with subsequent processes. Note that depending on the wavelength of the light source 1, optical CVD of WF 6 may also occur, but in this example, in order to prevent CVD of W on the flat area from occurring, the concentration of the etching gas is set to about several Torr. It is set high.
以上、光エツチングと一括熱CVDとを組合わ
せた場合について述べたが、本発明が適用可能な
対象はこの例に限定されることなく、他の多くの
変形が可能である。 Although the case where optical etching and batch thermal CVD are combined has been described above, the object to which the present invention is applicable is not limited to this example, and many other modifications are possible.
例えば、下層金属配線上の凹凸の生ずる絶縁膜
のエツチバツグに適用可能である。また、光化学
反応として吸着種に対する光脱離効果を利用すれ
ば、熱的CVDとの組合せにより、やはりバイア
スホールの埋込みが可能である。 For example, the present invention can be applied to etch bagging an insulating film on which unevenness occurs on lower metal wiring. Furthermore, if the photodesorption effect on adsorbed species is used as a photochemical reaction, it is possible to fill bias holes in combination with thermal CVD.
また、以上の説明で成膜に用いる熱CVDの代
りに、蒸着、スパツタ、MBE等の物理的な成膜
技術も用いられる。 Furthermore, instead of the thermal CVD used for film formation in the above explanation, physical film formation techniques such as evaporation, sputtering, and MBE may also be used.
また、光源としてはレーザに限らず、光化学反
応を誘起しうる他の紫外ランプやプラズマ発光等
が当然用いられる。また、基板の回転の代りに、
照射光を才差運動させながら基板に照射する光学
系を用いても良い。また、光化学反応の適用対象
としては、レーザ酸化などの改質加工も可能であ
る。 In addition, the light source is not limited to lasers, but other ultraviolet lamps, plasma light emission, etc. that can induce photochemical reactions can be used as a light source. Also, instead of rotating the board,
An optical system that irradiates the substrate with the irradiation light while precessing the irradiation light may be used. In addition, modification processing such as laser oxidation can also be applied to photochemical reactions.
以上説明したように、本発明によれば、凹凸の
ある基板に斜めに光化学反応誘起光を照射するこ
とにより、凹凸部に対する積分光照射量の違いを
利用した極めて簡単な光学系の構成にもかかわら
ず、セルフアラインで、デバイスの平坦化に特に
有効な加工方法及び加工装置が得られる。
As explained above, according to the present invention, by irradiating photochemical reaction-inducing light obliquely onto an uneven substrate, it is possible to construct an extremely simple optical system that takes advantage of the difference in the integrated light irradiation amount to the uneven parts. Regardless, self-alignment provides a processing method and processing apparatus that are particularly effective for flattening devices.
第１図は本発明の一実施例を説明する全体構成
図、第２図は本発明を適用した場合の基板の断面
図である。
１……光源、２……光源系、３……反応セル、
４……入射窓、５……基板、６……Ｘ−Ｙステー
ジ、７……傾斜ステージ、８……回転ステージ、
９……ヒータ、１０……ガス供給系、１１……排
ガス処理系、２１……Ａ配線、２２……バイアホ
ール、２３……絶縁膜、２４……埋め込まれた金
属、２５……入射光。
FIG. 1 is an overall configuration diagram illustrating an embodiment of the present invention, and FIG. 2 is a sectional view of a substrate to which the present invention is applied. 1...Light source, 2...Light source system, 3...Reaction cell,
4...Incidence window, 5...Substrate, 6...X-Y stage, 7...Tilt stage, 8...Rotation stage,
9... Heater, 10... Gas supply system, 11... Exhaust gas treatment system, 21... A wiring, 22... Via hole, 23... Insulating film, 24... Embedded metal, 25... Incident light .
Claims (1)
部に、光を照射して光化学反応に基づく加工を施
す光化学反応加工方法において、前記の光を平行
光束にして前記基板に斜めに照射し、かつ前記基
板に垂直な軸を回転軸として前記基板と前記の光
とを相対的に回転させることを特徴とする光化学
反応加工方法。 ２ 光源と、この光源からの光を入射窓を介して
基板上に導入しかつこの光照射により光化学反応
を生ずるガス雰囲気中にその基板を保持する加工
セルと、前記光源からの光を平行光にして前記入
射窓を介して前記基板面の所望個所に導く光学系
とを含む光化学反応加工装置において、前記基板
面の垂直軸に対し前記平行光が傾斜されてその基
板面を照射するようこの基板を保持する手段と、
この基板を前記垂直軸のまわりに回転させる回転
手段とを備えることを特徴とする光化学反応加工
装置。[Scope of Claims] 1. A photochemical reaction processing method in which a desired part of the surface of a substrate placed in a gas atmosphere is irradiated with light to perform processing based on a photochemical reaction, in which the light is converted into a parallel beam of light and the A photochemical reaction processing method characterized by irradiating a substrate obliquely and relatively rotating the substrate and the light using an axis perpendicular to the substrate as a rotation axis. 2. A light source, a processing cell that introduces light from the light source onto the substrate through an entrance window and holds the substrate in a gas atmosphere that causes a photochemical reaction by irradiation with the light, and converts the light from the light source into parallel light. and an optical system that guides the parallel light to a desired location on the substrate surface through the incident window, wherein the parallel light is tilted with respect to a vertical axis of the substrate surface and irradiates the substrate surface. means for holding the substrate;
A photochemical reaction processing apparatus comprising: rotation means for rotating the substrate around the vertical axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25998685A JPS62120476A (en) | 1985-11-19 | 1985-11-19 | Method and apparatus for photochemical reaction processing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25998685A JPS62120476A (en) | 1985-11-19 | 1985-11-19 | Method and apparatus for photochemical reaction processing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62120476A JPS62120476A (en) | 1987-06-01 |
| JPH041069B2 true JPH041069B2 (en) | 1992-01-09 |
Family
ID=17341692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25998685A Granted JPS62120476A (en) | 1985-11-19 | 1985-11-19 | Method and apparatus for photochemical reaction processing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62120476A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61279690A (en) * | 1985-06-05 | 1986-12-10 | Hitachi Ltd | Surface treatment device |
-
1985
- 1985-11-19 JP JP25998685A patent/JPS62120476A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61279690A (en) * | 1985-06-05 | 1986-12-10 | Hitachi Ltd | Surface treatment device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62120476A (en) | 1987-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4388517A (en) | Sublimation patterning process | |
| US6451512B1 (en) | UV-enhanced silylation process to increase etch resistance of ultra thin resists | |
| US5258266A (en) | Method of forming minute patterns using positive chemically amplifying type resist | |
| US5112645A (en) | Phototreating method and apparatus therefor | |
| JP2001523039A (en) | Method for printing molecular scale patterns on surfaces | |
| JPH041069B2 (en) | ||
| US5356758A (en) | Method and apparatus for positively patterning a surface-sensitive resist on a semiconductor wafer | |
| JPS61228633A (en) | Thin film formation method | |
| JPH0153577B2 (en) | ||
| JP2624168B2 (en) | Pattern forming method and electron beam drawing apparatus | |
| JPH07254556A (en) | Pattern forming method and forming apparatus | |
| JP3300781B2 (en) | Method of forming oxide film | |
| JP3125004B2 (en) | Substrate surface processing method | |
| JPS61216449A (en) | Method and apparatus for forming pattern thin-film | |
| JP4174610B2 (en) | Etching method | |
| JP3111071B2 (en) | Process for patterning a photoresist layer on a semiconductor wafer substrate | |
| JP2586700B2 (en) | Wiring formation method | |
| JP2883918B2 (en) | Compound semiconductor pattern formation method | |
| KR20120035823A (en) | Target structure for generating charged particle beam, method of manufacturing the same and medical appliance using the target structure | |
| JPS6245035A (en) | Manufacture of semiconductor device | |
| JP3639840B2 (en) | Manufacturing method of ultrafine periodic structure | |
| JPH10321625A (en) | Manufacture of semiconductor device | |
| JPS60260131A (en) | Anisotropic dry-etching | |
| JPH0555186A (en) | Surface treatment method | |
| JPS63155645A (en) | Surface flattening method |