[go: up one dir, main page]

JPH0244799B2 - Ketsushoseichohoho - Google Patents

Ketsushoseichohoho

Info

Publication number
JPH0244799B2
JPH0244799B2 JP17120581A JP17120581A JPH0244799B2 JP H0244799 B2 JPH0244799 B2 JP H0244799B2 JP 17120581 A JP17120581 A JP 17120581A JP 17120581 A JP17120581 A JP 17120581A JP H0244799 B2 JPH0244799 B2 JP H0244799B2
Authority
JP
Japan
Prior art keywords
crystal
container
concentration
magnetic field
rotation speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17120581A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5874594A (ja
Inventor
Toshihiko Suzuki
Tomio Sato
Yasaburo Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17120581A priority Critical patent/JPH0244799B2/ja
Priority to CA000414053A priority patent/CA1223798A/fr
Priority to GB08230370A priority patent/GB2109267B/en
Priority to NL8204133A priority patent/NL8204133A/nl
Priority to FR8217924A priority patent/FR2515216B1/fr
Priority to DE19823239570 priority patent/DE3239570C2/de
Publication of JPS5874594A publication Critical patent/JPS5874594A/ja
Publication of JPH0244799B2 publication Critical patent/JPH0244799B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP17120581A 1981-10-26 1981-10-26 Ketsushoseichohoho Expired - Lifetime JPH0244799B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP17120581A JPH0244799B2 (ja) 1981-10-26 1981-10-26 Ketsushoseichohoho
CA000414053A CA1223798A (fr) 1981-10-26 1982-10-22 Solidification de materiaux
GB08230370A GB2109267B (en) 1981-10-26 1982-10-25 Processes for solidifying liquid materials
NL8204133A NL8204133A (nl) 1981-10-26 1982-10-26 Werkwijze voor het maken van kristallen.
FR8217924A FR2515216B1 (fr) 1981-10-26 1982-10-26 Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques
DE19823239570 DE3239570C2 (de) 1981-10-26 1982-10-26 Verfahren zur Steuerung der Sauerstoffkonzentration von Siliciumeinkristallen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17120581A JPH0244799B2 (ja) 1981-10-26 1981-10-26 Ketsushoseichohoho

Publications (2)

Publication Number Publication Date
JPS5874594A JPS5874594A (ja) 1983-05-06
JPH0244799B2 true JPH0244799B2 (ja) 1990-10-05

Family

ID=15918967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17120581A Expired - Lifetime JPH0244799B2 (ja) 1981-10-26 1981-10-26 Ketsushoseichohoho

Country Status (6)

Country Link
JP (1) JPH0244799B2 (fr)
CA (1) CA1223798A (fr)
DE (1) DE3239570C2 (fr)
FR (1) FR2515216B1 (fr)
GB (1) GB2109267B (fr)
NL (1) NL8204133A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605096A (ja) * 1983-06-22 1985-01-11 Shin Etsu Handotai Co Ltd 単結晶製造方法および装置
JPS6033296A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS60137892A (ja) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
EP0173764B1 (fr) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Procédé et dispositif pour la fabrication des monocristaux
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62202528A (ja) * 1986-03-03 1987-09-07 Toshiba Corp 半導体基板の製造方法
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JP2556966B2 (ja) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JPS645992A (en) * 1987-06-29 1989-01-10 Sony Corp Method for growing crystal
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH01282185A (ja) * 1988-05-09 1989-11-14 Nippon Telegr & Teleph Corp <Ntt> 結晶の育成方法
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JPH0442894A (ja) * 1990-06-07 1992-02-13 Shin Etsu Handotai Co Ltd シリコン単結晶の成長方法
JP2767074B2 (ja) * 1990-07-13 1998-06-18 信越半導体 株式会社 シリコン単結晶の引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2734445B2 (ja) * 1996-04-16 1998-03-30 ソニー株式会社 結晶成長方法
JP4463957B2 (ja) * 2000-09-20 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
JP6680108B2 (ja) 2016-06-28 2020-04-15 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes

Also Published As

Publication number Publication date
FR2515216A1 (fr) 1983-04-29
GB2109267B (en) 1984-12-05
CA1223798A (fr) 1987-07-07
FR2515216B1 (fr) 1985-09-13
NL8204133A (nl) 1983-05-16
DE3239570A1 (de) 1983-05-05
JPS5874594A (ja) 1983-05-06
GB2109267A (en) 1983-06-02
DE3239570C2 (de) 1993-11-18

Similar Documents

Publication Publication Date Title
JPH0244799B2 (ja) Ketsushoseichohoho
JP4095975B2 (ja) シリコン単結晶を製造するための方法及び装置、シリコン単結晶及びこれから切り出された半導体ウェーハ
JP5485136B2 (ja) 単結晶を製造する方法及び装置
US7335256B2 (en) Silicon single crystal, and process for producing it
EP1310583B1 (fr) Procede de fabrication de plaquette en silicium monocristallin
US4659423A (en) Semiconductor crystal growth via variable melt rotation
US2768914A (en) Process for producing semiconductive crystals of uniform resistivity
US6702892B2 (en) Production device for high-quality silicon single crystals
CA1336061C (fr) Substrat de monocristal de silicium a haute teneur en oxygene pour systemes de semi-conducteurs; methode de preparation
US4622211A (en) Apparatus for solidification with resistance heater and magnets
WO2017199536A1 (fr) Dispositif de tirage de monocristaux et procédé de tirage de monocristaux
JPH01282185A (ja) 結晶の育成方法
JP4510948B2 (ja) シリコン単結晶ウェ―ハの製造方法
JP2019196289A (ja) 単結晶の製造方法及び単結晶引き上げ装置
KR0149287B1 (ko) 실리콘 단결정 제조장치 및 그를 이용한 실리콘 단결정의 제조방법
JPS6036392A (ja) 単結晶引上装置
JPS5850951B2 (ja) 結晶の成長方法とこれに用いる結晶成長装置
JP2022546127A (ja) 単結晶シリコンから半導体ウェハを製造する方法
KR20100040042A (ko) 히터 및 이를 포함하는 실리콘 단결정 제조 장치
JPH10120485A (ja) 単結晶製造装置
KR100639177B1 (ko) 실리콘 단결정의 제조방법
JPH0822797B2 (ja) 結晶成長方法
JPH10167875A (ja) 単結晶製造装置
JPH0822798B2 (ja) 結晶成長方法
JPS6033297A (ja) 単結晶半導体引上装置