[go: up one dir, main page]

FR2515216B1 - Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques - Google Patents

Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques

Info

Publication number
FR2515216B1
FR2515216B1 FR8217924A FR8217924A FR2515216B1 FR 2515216 B1 FR2515216 B1 FR 2515216B1 FR 8217924 A FR8217924 A FR 8217924A FR 8217924 A FR8217924 A FR 8217924A FR 2515216 B1 FR2515216 B1 FR 2515216B1
Authority
FR
France
Prior art keywords
materials
dielectrics
semiconductors
solidifying
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8217924A
Other languages
English (en)
Other versions
FR2515216A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2515216A1 publication Critical patent/FR2515216A1/fr
Application granted granted Critical
Publication of FR2515216B1 publication Critical patent/FR2515216B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8217924A 1981-10-26 1982-10-26 Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques Expired FR2515216B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17120581A JPH0244799B2 (ja) 1981-10-26 1981-10-26 Ketsushoseichohoho

Publications (2)

Publication Number Publication Date
FR2515216A1 FR2515216A1 (fr) 1983-04-29
FR2515216B1 true FR2515216B1 (fr) 1985-09-13

Family

ID=15918967

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8217924A Expired FR2515216B1 (fr) 1981-10-26 1982-10-26 Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques

Country Status (6)

Country Link
JP (1) JPH0244799B2 (fr)
CA (1) CA1223798A (fr)
DE (1) DE3239570C2 (fr)
FR (1) FR2515216B1 (fr)
GB (1) GB2109267B (fr)
NL (1) NL8204133A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605096A (ja) * 1983-06-22 1985-01-11 Shin Etsu Handotai Co Ltd 単結晶製造方法および装置
JPS6033296A (ja) * 1983-07-29 1985-02-20 Toshiba Ceramics Co Ltd 単結晶半導体引上装置
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS60137892A (ja) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JPS6153187A (ja) * 1984-08-24 1986-03-17 Sony Corp 単結晶成長装置
EP0173764B1 (fr) * 1984-08-31 1989-12-13 Gakei Electric Works Co., Ltd. Procédé et dispositif pour la fabrication des monocristaux
JPS62105998A (ja) * 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants
JPS62202528A (ja) * 1986-03-03 1987-09-07 Toshiba Corp 半導体基板の製造方法
US4659423A (en) * 1986-04-28 1987-04-21 International Business Machines Corporation Semiconductor crystal growth via variable melt rotation
JP2556966B2 (ja) * 1986-04-30 1996-11-27 東芝セラミツクス株式会社 単結晶の育成装置
JP2561072B2 (ja) * 1986-04-30 1996-12-04 東芝セラミツクス株式会社 単結晶の育成方法及びその装置
JPS645992A (en) * 1987-06-29 1989-01-10 Sony Corp Method for growing crystal
JP2651481B2 (ja) * 1987-09-21 1997-09-10 株式会社 半導体エネルギー研究所 超伝導材料の作製方法
JPH01282185A (ja) * 1988-05-09 1989-11-14 Nippon Telegr & Teleph Corp <Ntt> 結晶の育成方法
JPH0431386A (ja) * 1990-05-25 1992-02-03 Shin Etsu Handotai Co Ltd 半導体単結晶引上方法
JPH0442894A (ja) * 1990-06-07 1992-02-13 Shin Etsu Handotai Co Ltd シリコン単結晶の成長方法
JP2767074B2 (ja) * 1990-07-13 1998-06-18 信越半導体 株式会社 シリコン単結晶の引上方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2734445B2 (ja) * 1996-04-16 1998-03-30 ソニー株式会社 結晶成長方法
JP4463957B2 (ja) * 2000-09-20 2010-05-19 信越半導体株式会社 シリコンウエーハの製造方法およびシリコンウエーハ
JP6680108B2 (ja) 2016-06-28 2020-04-15 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607139A (en) * 1968-05-02 1971-09-21 Air Reduction Single crystal growth and diameter control by magnetic melt agitation
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes

Also Published As

Publication number Publication date
NL8204133A (nl) 1983-05-16
GB2109267B (en) 1984-12-05
JPS5874594A (ja) 1983-05-06
DE3239570C2 (de) 1993-11-18
GB2109267A (en) 1983-06-02
FR2515216A1 (fr) 1983-04-29
JPH0244799B2 (ja) 1990-10-05
DE3239570A1 (de) 1983-05-05
CA1223798A (fr) 1987-07-07

Similar Documents

Publication Publication Date Title
FR2515216B1 (fr) Procede de solidification de materiaux tels que des semi-conducteurs, des dielectriques ou des materiaux magnetiques
BE896489A (fr) Procede de changement de code pour systeme de serrure,
FR2507183B1 (fr) Procede de preparation d&#39;acides 6,8-difluoro-1,4-dihydro-4-oxo-quinoleine-3-carboxyliques
BE888453A (fr) Procede d&#39;isolement de metaux refractaires,
MA23041A1 (fr) Procede de preparation de composes benzopyraniques substitues.
GB2109797B (en) Method for purifying an epoxidation product
BE888306A (fr) Procede et installation pour la solidification de dechets radioactifs,
BE892808A (fr) Procede pour la decomposition d&#39;alkyl-tert-alkyl-ethers
FR2503158B1 (fr) Procede pour la preparation de dithiazolyldisulfures
RO92200A (fr) Procede pour la preparation des s-benzylcarbamates
FI823579L (fi) Kontrollsystem foer industriell process
FR2525219B1 (fr) Procede pour la preparation de 4-hydroxy-2-methyl-2h-1,2-benzothiazine-3-carboxamide-1-1-dioxydes
PT74559B (fr) Procede de preparation de trifluoromethylphenyl-tetrahydropyri-dines substituees
BE895259A (fr) Composition de cromoglycate de sodium, emballage et procede pour preparer la composition
FR2549042B1 (fr) Procede pour la preparation de la 3,11-dimethyl-2-nonacosanone
RO86358A2 (fr) Procede pour la preparation des 1,2,4-triazol-1-yl-propionitryles
RO82970A (fr) Procede pour la preparation des derives de cephalosporine bis-tetrazoylmethyle substitue
MA20218A1 (fr) Procede de purification d&#39;uranium hexavalent.
PT72779A (fr) Procede pour la reduction de la toxicite
FR2499987B1 (fr) Procede pour la preparation de composes de o-indol-3-yl-alkanol
BE888779A (fr) Procede pour la conservation de constituants radioactivement contamines
RO84362A2 (fr) Procede pour la preparation des derives de 0ylite
RO81684A (fr) Procede pour la preparation des benzenamines
FR2529543B1 (fr) Procede de preparation de difluoromethoxy ou difluoromethylthioarenes
RO82505A (fr) Procede pour la preparation des derives de quinoxalynyle-1,4-dioxydesprocede pour la preparation des derives de quinoxalynyle-1,4-dioxydes