JP7132214B2 - Detergent composition for removing resin mask - Google Patents

Description

TECHNICAL FIELD The present disclosure relates to a cleaning composition for removing a resin mask, a cleaning method using the cleaning composition, and a method for manufacturing an electronic component.

2. Description of the Related Art In recent years, in personal computers and various electronic devices, power consumption has been reduced, processing speed has been increased, and the size has been reduced. Until now, the metal mask method has been mainly used for forming such fine wiring and connection terminals such as pillars and bumps, but its versatility is low and it has become difficult to cope with the miniaturization of wiring and the like. is changing to other new methods.

As one of new methods, a method of using a dry film resist as a thick film resin mask instead of a metal mask is known. This resin mask is finally stripped and removed, and an alkaline cleaning agent for stripping is used at that time.

As such a cleaning agent for stripping, for example, in Patent Document 1, it is characterized by containing a quaternary ammonium hydroxide, a specific alkyldiol aryl ether or a derivative thereof, and (C) acetophenone or a derivative thereof. A low-etching photoresist cleaner is described.
In Patent Document 2, (A) 35 to 80% by mass of an aliphatic alcohol solvent, (B) 10 to 40% by mass of an organic solvent selected from halogenated hydrocarbon solvents and non-hydroxylated ether solvents, (C) the fourth A photoresist stripper consisting essentially of 0.1 to 25% by weight of ammonium salt is described.
Patent Document 3 discloses a second solvent containing dimethyl sulfoxide, a quaternary ammonium hydroxide, a specific alkanolamine, an alcohol, a polyhydroxy compound, or a combination thereof, and a water content of 3% by mass or less. solution is described.
US Pat. No. 5,300,000 describes semi-aqueous compositions containing at least one alkali and/or alkaline earth metal base, at least one organic solvent and water for reworking microelectronic devices.

WO2008/071078 U.S. Pat. No. 5,185,235 U.S. Patent Application Publication No. 2014/0155310 WO2008/039730

When forming fine wiring on a printed circuit board, etc., in order to reduce the residue of the resin mask as well as the remaining auxiliary agents contained in the solder and plating solution used for fine wiring and bump formation, a detergent composition is used. Items require high detergency. The resin mask is formed using a resist whose physical properties such as solubility in a developing solution are changed by light, electron beams, or the like.
Resists are broadly classified into negative and positive resists depending on how they react with light and electron beams. Negative resists have the property that their solubility in a developing solution decreases when exposed to light, and a layer containing a negative resist (hereinafter also referred to as a “negative resist layer”) has an exposed portion after exposure and development. Used as a resin mask. A positive resist has the property of increasing its solubility in a developer when exposed to light. The removed and unexposed portion is used as a resin mask. By using a resin mask having such properties, it is possible to form fine connection portions of a circuit board such as metal wiring, metal pillars, and solder bumps.

However, the characteristics of the resin mask change due to the plating process, heat treatment, and the like used when forming these connection portions, and the resin mask tends to be difficult to remove in the subsequent cleaning process. In particular, since negative resists have the property of curing by reaction with light or electron beams, resin masks formed using negative resists can be cured by plating or heat treatment used when forming connections. The hardening progresses more than necessary, and the cleaning process cannot completely remove it. Since such a plated and/or heat-treated resin mask is difficult to remove, the cleaning composition is required to have high resin mask removability.

On the other hand, in order to reduce the size of electronic devices, increase processing speed, and reduce power consumption, wiring is becoming finer. As the wiring width becomes narrower, the electrical resistance increases, heat is generated, and there is a risk of deterioration in the functionality of the electronic device. In order to reduce the electrical resistance without increasing the area of the wiring board, measures are taken to increase the height of the wiring. As a result, the resin mask used for wiring formation becomes thicker, the contact area with the wiring increases, and the distance between the wirings becomes narrower with the miniaturization, making it difficult to remove the resin mask. In particular, high-energy, low-wavelength light is used to draw fine wiring, but because the resin mask is thick, the distance from the resin mask surface to the substrate is long, and the reaction rate of photopolymerization due to exposure is lower than that of the surface. A difference occurs between the substrate contact surface and the reaction on the surface proceeds excessively. Unless the penetration is enhanced, the cleaning composition will not penetrate from the surface of the resin mask, making it difficult to remove the resin mask.

Accordingly, the present disclosure provides a cleaning composition for removing a resin mask that is excellent in resin mask removability, a cleaning method using the cleaning composition, and a method for manufacturing a substrate.

The present disclosure, in one aspect, contains an alkaline agent (Component A), an organic solvent (Component B) and water (Component C), wherein the Hansen Solubility Parameters coordinates of Component B are δd=18.3, δp=6 .8, within the range of a sphere with a radius of 5.45 MPa ^0.5 centered at δh = 3.7, and the content of component C at the time of use is 69.9% by mass or more and 99.4% by mass or less. The present invention relates to a cleaning composition for removing masks.

In one aspect, the present disclosure relates to a cleaning method including a step of peeling off a resin mask from an object to be cleaned to which the resin mask is attached, using the cleaning composition of the present disclosure.

In one aspect, the present disclosure relates to a method for manufacturing an electronic component, including a step of peeling off the resin mask from the object to be cleaned to which the resin mask has adhered with the cleaning composition of the present disclosure.

The present disclosure, in one aspect, relates to the use of cleaning compositions of the present disclosure as cleaning agents in the manufacture of electronic components.

In one aspect, the present disclosure is a kit for use in either the cleaning method of the present disclosure or the method of manufacturing an electronic component of the present disclosure, comprising a solution (first solution) containing component A; and a solution (second liquid) containing the Fluid refers to kits that are mixed at the time of use.

According to the present disclosure, in one aspect, it is possible to provide a cleaning composition for removing a resin mask that is excellent in removability of the resin mask.

The present disclosure, in one aspect, contains an alkaline agent (Component A), an organic solvent (Component B) and water (Component C), wherein the Hansen Solubility Parameters coordinates of Component B are δd=18.3, δp=6 .8, Within the range of a sphere with a radius of 5.45 MPa ^0.5 centered at δh = 3.7, and the content of component C is 69.9% by mass or more and 99.4% by mass or less, resin mask peeling (hereinafter also referred to as "cleaning composition of the present disclosure").

ADVANTAGE OF THE INVENTION According to this indication, the cleaning composition which is excellent in resin mask removability can be provided. Therefore, the cleaning composition of the present disclosure can efficiently remove a resin mask, particularly a plated and/or heat-treated resin mask. And, by using the cleaning composition of the present disclosure, high-quality electronic components can be obtained with high yield. Furthermore, by using the cleaning composition of the present disclosure, electronic components having fine wiring patterns can be produced efficiently.

Although the details of the action mechanism of the effects of the detergent composition of the present disclosure are partly unknown, it is presumed as follows.
In general, peeling of the resin mask is considered to be caused by interfacial stress caused by the penetration of the components of the cleaning composition into the resin mask and the swelling of the resin mask. In the detergent composition of the present disclosure, the alkaline agent (component A), the specific organic solvent (component B), and water (component C) permeate the resin mask, thereby dissolving the alkali-soluble resin contained in the resin mask. It is believed that the separation of the resin mask is promoted by promoting dissociation and causing charge repulsion. At this time, the specific organic solvent (component B) acts on the interface between the substrate surface and the resin mask and the interface between the wiring and the resin mask, thereby lowering the adhesion between the substrate and the resin, further hindering the peeling of the resin mask. It is presumed that the resin mask removability is greatly improved. In addition, a specific organic solvent (component B) acts on unreacted monomers in the resin mask, and starting from there, the alkali agent (component A) and water (component C) are permeated into the resin mask, and the resin mask is peeled off. It is also presumed that the resin mask removability is remarkably improved. As a result, it is believed that fine circuits (wiring patterns) can be formed on the substrate efficiently and with high cleanliness.
However, the present disclosure may not be construed as being limited to this mechanism.

In recent years, cleaning compositions are required to have high resin mask removability, but have little effect on substrates containing organic resins such as epoxy resins and phenolic resins (hereinafter also referred to as “organic resin-containing substrates”). is desired. This is because, if the cleaning composition dissolves or degrades the surface of the substrate, the performance of the substrate required as an electronic component is lowered, making it impossible to obtain a high-quality substrate.
In contrast, in the cleaning composition of the present disclosure, the specific organic solvent (Component B) has optimal compatibility with water, and even when a large amount of water is present or the amount of Component B added is small, It works effectively and can promote penetration of the alkaline agent (component A) and water (component C) into the resin mask. By reducing the organic matter content in the cleaning composition of the present disclosure, the influence on the organic resin-containing substrate can be reduced.

In addition, computerization has progressed in various fields, the production of printed circuit boards and the like has increased, and the amount of detergent compositions used has also tended to increase. As the amount of the cleaning composition used increases, the wastewater treatment load of the cleaning composition and the waste liquid such as rinse water increases, and the eutrophication of lakes and marshes due to the inflow of the waste liquid increases. Therefore, there is a strong demand for a detergent composition that has a low wastewater treatment load, does not contain nitrogen and phosphorus that cause eutrophication in lakes and marshes, and is capable of efficiently removing the resin mask.
Furthermore, in order to efficiently and repeatedly use the cleaning solution, it is advantageous to use a water-based cleaning composition by peeling that allows the removed resin mask to be easily removed from the cleaning solution with a screen or the like. strongly requested. However, in the method described in the above patent document, it is difficult to achieve both high resin mask removability and low wastewater treatment load.
On the other hand, in the cleaning composition of the present disclosure, as described above, the specific organic solvent (Component B) has optimum compatibility with water. It works effectively even when the amount is small, and can promote the penetration of the alkali agent (component A) and water (component C) into the resin mask. By reducing the organic matter content in the cleaning composition of the present disclosure, an increase in the wastewater treatment load can be suppressed.

In the present disclosure, a resin mask is a mask for protecting the surface of a substance from processing such as etching, plating, heating, or the like, that is, a mask that functions as a protective film. As for the resin mask, in one or more embodiments, the resist layer after the exposure and development steps, and at least one of the exposure and development processing has been performed (hereinafter also referred to as “exposure and/or development processing”). A resist layer or a cured resist layer may be used. In one or a plurality of embodiments, the resin material forming the resin mask includes a film-like photosensitive resin or a resist film. A general-purpose resist film can be used.

[Component A: alkaline agent]
The cleaning composition of the present disclosure, in one or more embodiments, contains an alkaline agent (component A). Component A can be used singly or in combination of two or more.

Component A includes, for example, at least one selected from inorganic alkalis and organic alkalis, and inorganic alkalis are preferred from the viewpoint of reducing the load on wastewater treatment.

Examples of inorganic alkali include sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate. Among these, from the viewpoint of improving the removability of the resin mask, one or a combination of two or more selected from sodium hydroxide, potassium hydroxide, sodium carbonate and potassium carbonate is preferable, and at least one of sodium hydroxide and potassium hydroxide. is more preferred, and potassium hydroxide is even more preferred.

Examples of organic alkalis include quaternary ammonium hydroxides represented by the following formula (I) and amines represented by the following formula (II).

In formula (I) above, R ¹ , R ² , R ³ and R ⁴ are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group and a hydroxypropyl group. is.

^In the above ^formula (II), R5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, and R6 represents at least a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group. 1, wherein R ⁷ is at least one selected from an aminoethyl group, a hydroxyethyl group, or a hydroxypropyl group, or in formula (II), R ⁵ is a methyl group, an ethyl group, an aminoethyl group , a hydroxyethyl group or a hydroxypropyl group, and R ⁶ and R ⁷ are bonded to each other to form a pyrrolidine ring or piperazine ring with the N atom in formula (II).

Examples of the quaternary ammonium hydroxide represented by formula (I) include salts composed of a quaternary ammonium cation and a hydroxide. Specific examples of quaternary ammonium hydroxides include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrapropylammonium hydroxide, 2-hydroxyethyltrimethylammonium hydroxide (choline), 2-hydroxyethyltriethyl ammonium hydroxide, 2-hydroxyethyltripropylammonium hydroxide, 2-hydroxypropyltrimethylammonium hydroxide, 2-hydroxypropyltriethylammonium hydroxide, 2-hydroxypropyltripropylammonium hydroxide, dimethylbis(2-hydroxyethyl) ammonium hydroxide, diethylbis(2-hydroxyethyl)ammonium hydroxide, dipropylbis(2-hydroxyethyl)ammonium hydroxide, tris(2-hydroxyethyl)methylammonium hydroxide, tris(2-hydroxyethyl)ethylammonium hydroxide, At least one selected from tris(2-hydroxyethyl)propylammonium hydroxide, tetrakis(2-hydroxyethyl)ammonium hydroxide, and tetrakis(2-hydroxypropyl)ammonium hydroxide. Among these, tetramethylammonium hydroxide (TMAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), dimethylbis(2-hydroxyethyl)ammonium hydroxide, and diethylbis(2 -hydroxyethyl)ammonium hydroxide is preferred, and is preferably selected from tetramethylammonium hydroxide (TMAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), and dimethylbis(2-hydroxyethyl)ammonium hydroxide. At least one selected is more preferred, and tetramethylammonium hydroxide (TMAH) is even more preferred.

Examples of amines represented by formula (II) include alkanolamines, primary to tertiary amines and heterocyclic compounds. Specific examples of amines include monoethanolamine, monoisopropanolamine, N-methylmonoethanolamine, N-methylisopropanolamine, N-ethylmonoethanolamine, N-ethylisopropanolamine, diethanolamine, diisopropanolamine, N-dimethyl monoethanolamine, N-dimethylmonoisopropanolamine, N-methyldiethanolamine, N-methyldiisopropanolamine, N-diethylmonoethanolamine, N-diethylmonoisopropanolamine, N-ethyldiethanolamine, N-ethyldiisopropanolamine, N -(β-aminoethyl)ethanolamine, N-(β-aminoethyl)isopropanolamine, N-(β-aminoethyl)diethanolamine, N-(β-aminoethyl)diisopropanolamine, 1-methylpiperazine, 1- At least one selected from (2-hydroxyethyl)pyrrolidine, 1-(2-hydroxyethyl)piperazine, ethylenediamine and diethylenetriamine can be used. Among these, from the viewpoint of improving the resin mask removability, monoethanolamine, monoisopropanolamine, diethanolamine, N-methylmonoethanolamine, N-ethylmonoethanolamine, N-(β-aminoethyl)ethanolamine, 1- At least one selected from (2-hydroxyethyl)piperazine and diethylenetriamine is preferred, and at least one selected from monoethanolamine, monoisopropanolamine, diethanolamine, N-methylmonoethanolamine, and N-ethylmonoethanolamine is more preferred. Preferred, and more preferred is monoethanolamine.

The content of component A when using the cleaning composition of the present disclosure is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and 1.0% by mass, from the viewpoint of improving the resin mask removability. % or more is more preferable, and 1.5% by mass or more is still more preferable, and from the viewpoint of improving the resin mask removability, it is preferably 15% by mass or less, more preferably 10% by mass or less, and 7.5% by mass or less. More preferably, 5% by mass or less is even more preferable. More specifically, the content of Component A at the time of use is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more and 10% by mass or less, and 1.0% by mass or more. 0.5% by mass or less is more preferable, and 1.5% by mass or more and 5% by mass or less is even more preferable. When component A consists of two or more alkaline agents, the content of component A refers to the total content thereof.

In the present disclosure, "the content of each component at the time of use of the cleaning composition" refers to the content of each component at the time of cleaning, that is, when the cleaning composition is started to be used for cleaning.

[Component B: organic solvent]
The cleaning compositions of the present disclosure, in one or more embodiments, contain an organic solvent (component B). Component B can be used singly or in combination of two or more.

In this disclosure, the coordinates of the Hansen Solubility Parameters for component B are within a sphere of radius 5.45 MPa ^0.5 centered at δd=18.3, δp=6.8, δh=3.7. When the cleaning composition of the present disclosure contains two or more organic solvents (hereinafter also referred to as "mixed organic solvent"), the Hansen solubility parameter of the entire mixed organic solvent may not be within the above range. If at least one organic solvent having a Hansen solubility parameter within the above range is contained therein, the effects of the present disclosure can be exhibited.

Here, the Hansen solubility parameter (hereinafter also referred to as "HSP") is a value used to predict the solubility of a substance, which was announced by Charles M. Hansen in 1967. This parameter is based on the idea that two substances with similar interactions between them are more likely to dissolve in each other. HSP consists of the following three parameters (unit: MPa ^0.5 ).
δd: Energy due to intermolecular dispersion force δp: Energy due to intermolecular dipole interaction δh: Energy due to intermolecular hydrogen bonding These three parameters can be regarded as coordinates in a three-dimensional space (Hansen space), and 2 When HSPs of two substances are placed in the Hansen space, the closer the distance between the two points, the easier it is to dissolve each other. There is a detailed explanation in the March 2010 issue of Kagaku Kogyo (Kagaku Kogyo Publishing Co., Ltd.), etc. Hansen solubility parameters of various substances can be obtained by using PC software such as "HSPiP: Hansen Solubility Parameters in Practice". The present disclosure uses the Hansen Solubility Parameters obtained using this PC software "HSPiP: Hansen Solubility Parameters in Practice". When the component B is a mixed organic solvent of two or more kinds, the distance of the HSP as the mixed organic solvent can be calculated using the HSP calculation function of the mixed organic solvent of "HSPiP: Hansen Solubility Parameters in Practice".

The coordinates of the HSPs of component B in the present disclosure can also be expressed as follows. That is, when the coordinates of the HSP of the component B are (δd _B , δp _B , δh _B ), the coordinates of the HSP of the component B (δd _B , δp _B , δh _B ) and the component coordinate X (δd = 18.3 , δp=6.8, δh=3.7) (unit: MPa ^0.5 ) satisfies the following formula.
Distance=[(δd _B −18.3) ² +(δp _B −6.8) ² +(δh _B −3.7) ² ] ^0.5
≤ 5.45 MPa ^0.5

Component B is not particularly limited as long as it is an organic solvent in which the distance between the coordinate of ^HSP of component B and component coordinate X satisfies the above formula. Phenone (distance: 0.65 MPa ^0.5 ), p-anisaldehyde (distance: 5.15 MPa ^0.5 ), o-anisaldehyde (distance: 2.43 MPa ^0.5 ), p-methylacetophenone (distance: 1.23 MPa ^0.5 ), tetrahydrofuran (distance: 5.36 MPa ^0.5 ), dimethoxytetrahydrofuran (distance: 5.42 MPa ^0.5 ), methoxycyclopentane (distance: 4.10 MPa ^0.5 ), diphenyl ether (distance: 3.83 MPa ^0.5 ), anisole (distance: 4.12 MPa ^0.5 ) ), phenetole (distance: 2.33 MPa ^0.5 ), diethylene glycol diethyl ether (distance: 5.42 MPa ^0.5 ), dipropylene glycol dimethyl ether (distance: 5.44 MPa ^0.5 ), cyclohexanone (distance: 2.35 MPa ^0.5 ), 2-octanone (distance: 4.73 MPa ^0.5 ) and benzaldehyde (distance: 2.79 MPa ^0.5 ), or a combination of two or more. From the viewpoint of improving resin mask removability, acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetol, diethylene glycol diethyl ether, One or a combination of two or more selected from dipropylene glycol dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde is preferable, and acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxy More preferably one or a combination of two or more selected from tetrahydrofuran, methoxycyclopentane, anisole, phenetole, diethylene glycol diethyl ether, cyclohexanone and benzaldehyde, acetophenone, propiophenone, p-anisaldehyde, p-methylacetophenone, tetrahydrofuran, One or a combination of two or more selected from dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone and benzaldehyde is more preferable, and one selected from acetophenone, p-anisaldehyde, p-methylacetophenone, phenetole, cyclohexanone and benzaldehyde Species or combinations of two or more are even more preferred. Numerical values in parentheses indicate distances between the HSP coordinates of component B and component coordinates X (unit: MPa ^0.5 ).

Component B in the present disclosure preferably has a high boiling point from the viewpoint of fire risk reduction and stamina due to ignition. For example, the boiling point of Component B is preferably 160°C or higher, more preferably 200°C or higher.

In the present disclosure, component B preferably has high solubility in water from the viewpoint of concentration. For example, the solubility of component B in 100 mL of water is preferably 0.3 g or more.

The content of component B when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more, more preferably 1% by mass or more, and more preferably 3% by mass or more, from the viewpoint of improving the resin mask removability. It is more preferably 5% by mass or more, and from the viewpoint of reducing the load on wastewater treatment and reducing the effect on organic resin-containing substrates, it is preferably 30% by mass or less, more preferably 25% by mass or less, and 20% by mass or less. More preferably, 15% by mass or less is even more preferable. More specifically, the content of component B at the time of use is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 25% by mass or less, and 3% by mass or more and 20% by mass or less. More preferably, 5% by mass or more and 15% by mass or less is even more preferable. When component B is a combination of two or more, the content of component B refers to their total content.

The mass ratio (A/B) of component A and component B in the cleaning composition of the present disclosure is preferably 0.05 or more, more preferably 0.08 or more, from the viewpoint of storage stability and reduction of wastewater treatment load. , more preferably 0.1 or more, even more preferably 0.15 or more, and from the viewpoint of improving the resin mask removability, it is preferably 2 or less, more preferably 1 or less, further preferably 0.8 or less, and 0.8. 5 or less is even more preferable. More specifically, the mass ratio (A/B) is preferably 0.05 or more and 2 or less, more preferably 0.08 or more and 1 or less, still more preferably 0.1 or more and 0.8 or less, and 0.15 or more. 0.5 or less is even more preferable.

[Component C: water]
The cleaning compositions of the present disclosure contain water (component C). The water of component C includes ion-exchanged water, RO water, distilled water, pure water, ultrapure water, and the like.

The content of Component C in the cleaning composition of the present disclosure can be the balance after removing Component A, Component B, and optional components described below. Specifically, the content of component C when using the cleaning composition of the present disclosure is 69.9 mass from the viewpoint of improving the resin mask removability, reducing the load on wastewater treatment, and reducing the effect on the organic resin-containing substrate. % or more, preferably 70% by mass or more, more preferably 75% by mass or more, even more preferably 80% by mass or more, and from the viewpoint of improving the resin mask removability, 99.4% by mass or less, 95% by mass or less is preferable, 90% by mass or less is more preferable, and 85% by mass or less is even more preferable. More specifically, the content of component C at the time of use is 69.9% by mass or more and 99.4% by mass or less, preferably 70% by mass or more and 95% by mass or less, and 75% by mass or more and 90% by mass. The following are more preferable, and 80% by mass or more and 85% by mass or less are even more preferable.

[Optional component]
The detergent composition of the present disclosure may further contain optional components in addition to the components A to C, if necessary. Examples of optional components include components that can be used in ordinary detergents, such as organic solvents other than component B, surfactants, chelating agents, thickeners, dispersants, rust inhibitors, and polymeric compounds. , solubilizers, antioxidants, preservatives, antifoaming agents, antibacterial agents and the like. The content of the optional component when the cleaning composition of the present disclosure is used is preferably 0% by mass or more and 2.0% by mass or less, more preferably 0% by mass or more and 1.5% by mass or less, and 0% by mass or more and 1 .3% by mass or less is more preferable, and 0% by mass or more and 1.0% by mass or less is even more preferable.

When using the cleaning composition of the present disclosure, the total content of organic matter derived from component A, component B, and optional components is 40% by mass or less from the viewpoint of reducing the load on wastewater treatment and reducing the impact on organic resin-containing substrates. Preferably, 35% by mass or less is more preferable, 30% by mass or less is still more preferable, 25% by mass or less is even more preferable, and 20% by mass or less is even more preferable, and from the viewpoint of improving the resin mask removability, 0.5 % by mass or more is preferable, 1% by mass or more is more preferable, 3% by mass or more is still more preferable, and 5% by mass or more is even more preferable. More specifically, the total content of organic matter derived from component A, component B, and optional components when using the cleaning composition of the present disclosure is preferably 0.5% by mass or more and 40% by mass or less, and 1% by mass. 35 mass % or less is more preferable, 3 mass % or more and 30 mass % or less is still more preferable, 5 mass % or more and 25 mass % or less is still more preferable, and 5 mass % or more and 20 mass % or less is still more preferable.

The cleaning composition of the present disclosure preferably does not substantially contain nitrogen-containing compounds and phosphorus-containing compounds from the viewpoint of reducing the wastewater treatment load and suppressing eutrophication of the wastewater area. In the present disclosure, "substantially free of nitrogen-containing compounds and phosphorus-containing compounds" means that the total content of nitrogen-containing compounds and phosphorus-containing compounds in the cleaning composition of the present disclosure is less than 0.1% by mass. Say things. The total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition of the present disclosure is preferably 0.05% by mass or less from the viewpoint of reducing the wastewater treatment load and suppressing eutrophication of the wastewater area. 0.01% by mass or less is more preferable, and 0% by mass is even more preferable.
Examples of nitrogen-containing compounds include nitrogen-containing compounds conventionally and widely used as detergent compositions, for example, at least one or a combination of two or more selected from amines and their salts, ammonia, and ammonium salts. mentioned. Examples of the amine include aminoalcohols such as monoethanolamine and diethanolamine. Examples of the ammonium salt include quaternary ammonium salts such as tetramethylammonium hydroxide (TMAH).
Examples of the phosphorus-containing compound include phosphorus-containing compounds conventionally and widely used as detergent compositions, such as phosphoric acid and salts thereof, condensed phosphoric acids such as pyrophosphoric acid, polyphosphoric acid and metaphosphoric acid, and salts thereof. and at least one or a combination of two or more selected from inorganic phosphoric acids, organic phosphoric acids, and phosphate esters.

[Method for producing cleaning composition]
The detergent composition of the present disclosure can be produced by blending the components A to C and, if necessary, the optional components described above by a known method. For example, the cleaning composition of the present disclosure can be made by blending at least the components A to C. Accordingly, the present disclosure relates to a method for producing a cleaning composition, comprising the step of blending at least said components A to C. In the present disclosure, "blending" includes mixing components A to C and optionally other components simultaneously or in any order. In the method for producing the cleaning composition of the present disclosure, the preferred blending amount of each component can be the same as the preferred content of each component of the cleaning composition of the present disclosure described above.

The cleaning composition of the present disclosure may be prepared as a concentrate in which the amount of component C water is reduced to the extent that separation, precipitation, etc. do not occur and storage stability is not impaired. The concentrate of the detergent composition is preferably a concentrate with a dilution ratio of 3 times or more from the viewpoint of transportation and storage, and preferably a concentrate with a dilution ratio of 30 times or less from the viewpoint of storage stability. . The concentrate of the detergent composition can be used by diluting it with water so that the contents of components A to C at the time of use are as described above (that is, the contents at the time of washing). Further, the detergent composition concentrate can be used by adding each component separately at the time of use. In the present disclosure, "at the time of use" or "at the time of washing" of the concentrated liquid cleaning composition refers to the state in which the concentrate of the cleaning composition is diluted.

[Item to be washed]
In one or more embodiments, the cleaning composition of the present disclosure can be used for cleaning an object to be cleaned with a resin mask adhered thereto.
Objects to be cleaned include, for example, electronic components and their intermediates. Examples of electronic components include at least one component selected from printed circuit boards, wafers, metal plates such as copper plates and aluminum plates. The manufacturing intermediates are intermediate products in the manufacturing process of electronic components, and include intermediate products after resin mask treatment. As a specific example of the object to be cleaned to which the resin mask is adhered, for example, wiring, wiring, or the like may be removed through processes such as soldering or plating (copper plating, aluminum plating, nickel plating, etc.) using the resin mask. An electronic component or the like having a connection terminal or the like formed on the surface of a substrate is exemplified.
Accordingly, the present disclosure, in one aspect, relates to the use of cleaning compositions of the present disclosure as cleaning agents in the manufacture of electronic components.

In one or a plurality of embodiments, the cleaning agent composition of the present disclosure is suitable for cleaning an object to be cleaned to which a resin mask or a plated and/or heat-treated resin mask is adhered in terms of cleaning effect. can be used for The resin mask may be, for example, a negative resin mask or a positive resin mask, and the negative resin mask is preferable because the effects of the present disclosure are likely to be exhibited. Negative resin masks include, for example, negative dry film resists that have been exposed and/or developed. In the present disclosure, a negative resin mask is formed using a negative resist, and includes, for example, a negative resist layer that has been exposed and/or developed. In the present disclosure, a positive resin mask is formed using a positive resist, and includes, for example, a positive resist layer that has been exposed and/or developed.

[Washing method]
In one aspect, the present disclosure relates to a cleaning method (hereinafter also referred to as “cleaning method of the present disclosure”), which includes a step of removing the resin mask from the object to be cleaned to which the resin mask is attached with the cleaning composition of the present disclosure. . In the cleaning method of the present disclosure, the step of peeling off the resin mask from the object to be cleaned includes, in one or more embodiments, contacting the object to be cleaned with the resin mask attached to the cleaning composition of the present disclosure. With the cleaning method of the present disclosure, it is possible to efficiently remove a resin mask, especially a plated and/or heat-treated resin mask.

As a method of removing a resin mask from an object to be cleaned using the cleaning composition of the present disclosure or a method of contacting the cleaning composition of the present disclosure with an object to be cleaned, for example, the cleaning composition is added Examples include a method of contact by immersion in a cleaning bath, a method of injecting a spray of a cleaning composition into contact (shower method), and an ultrasonic cleaning method of irradiating ultrasonic waves during immersion. The cleaning composition of the present disclosure can be used for cleaning as it is without dilution. Examples of the object to be washed include the above-described objects to be washed.

In one or a plurality of embodiments, the cleaning method of the present disclosure can include the steps of rinsing with water and drying after contacting an object to be cleaned with the cleaning composition. In one or more embodiments, the cleaning method of the present disclosure can include a step of rinsing with water after contacting the object to be cleaned with the cleaning composition.

In the cleaning method of the present disclosure, since the cleaning power of the cleaning composition of the present disclosure is likely to be exhibited, it is preferable to irradiate ultrasonic waves when the cleaning composition of the present disclosure and the object to be cleaned are in contact. More preferably, the sound waves are of relatively high frequency. From the same viewpoint, the irradiation conditions of the ultrasonic waves are preferably 26 to 72 kHz and 80 to 1500 W, more preferably 36 to 72 kHz and 80 to 1500 W.

In the cleaning method of the present disclosure, the temperature of the cleaning composition is preferably 40° C. or higher, more preferably 50° C. or higher, from the viewpoint that the cleaning power of the cleaning composition of the present disclosure is easily exhibited. From the viewpoint of reducing the influence on the temperature, the temperature is preferably 70° C. or less, and more preferably 60° C. or less.

[Manufacturing method of electronic component]
In one aspect of the present disclosure, a method for manufacturing an electronic component (hereinafter referred to as “the method for manufacturing the electronic component of the present disclosure”) includes a step of peeling off the resin mask from the object to be cleaned to which the resin mask is attached, using the cleaning composition of the present disclosure. Also referred to as "manufacturing method"). Examples of the object to be washed include the above-described objects to be washed. The method for manufacturing an electronic component of the present disclosure can effectively remove the resin mask adhering to the electronic component by performing cleaning using the cleaning agent composition of the present disclosure, so that it is possible to manufacture highly reliable electronic components. be possible. Furthermore, by performing the cleaning method of the present disclosure, it becomes easier to remove the resin mask adhering to the electronic component, so that the cleaning time can be shortened and the manufacturing efficiency of the electronic component can be improved.

[kit]
In one aspect, the present disclosure relates to a kit (hereinafter also referred to as "kit of the present disclosure") for use in either the cleaning method of the present disclosure or the method of manufacturing an electronic component of the present disclosure. The kit of the present disclosure, in one or more embodiments, is a kit for producing the cleaning composition of the present disclosure.

In one or more embodiments, the kit of the present disclosure includes a solution containing component A (first liquid) and a solution containing component B (second liquid) in an unmixed state, At least one of the first liquid and the second liquid further contains a part or all of the component C (water), and the first liquid and the second liquid are mixed at the time of use, a kit (two-component detergent composition things). After the first liquid and the second liquid are mixed, they may be diluted with component C (water) if necessary. Each of the first liquid and the second liquid may contain the optional components described above as necessary. According to the kit of the present disclosure, a cleaning composition having excellent resin mask removability can be obtained.

In one or more embodiments of the kit of the present disclosure, from the viewpoint of availability and workability, a first liquid containing 30 to 50% by mass of component A and a balance of component C; A kit comprising a second liquid consisting only of; a first liquid containing 30 to 50% by mass of component A and the balance of component C; and a first liquid containing 1 to 99% by mass of component B and the balance of component C or a kit containing 30 to 50% by mass of component A and the balance of component C, and 1 to 99% by mass of component B, optional components and component C and a second liquid containing as the balance; These kits can further have a third liquid consisting of component C, and more preferably the third liquid is used to dilute the mixture of the first liquid and the second liquid to an arbitrary concentration.

The disclosure further relates to one or more of the following embodiments.
<1> containing an alkaline agent (component A), an organic solvent (component B) and water (component C),
the coordinates of the Hansen solubility parameters of component B are within a sphere of radius 5.45 MPa ^0.5 centered at δd = 18.3, δp = 6.8, δh = 3.7;
A cleaning composition for removing a resin mask, wherein the content of Component C at the time of use is 69.9% by mass or more and 99.4% by mass or less.

上記式（Ｉ）において、Ｒ¹、Ｒ²、Ｒ³及びＲ⁴は、それぞれ独立に、メチル基、エチル基、プロピル基、ヒドロキシメチル基、ヒドロキシエチル基及びヒドロキシプロピル基から選ばれる少なくとも１種である。

上記式（ＩＩ）において、Ｒ⁵は、水素原子、メチル基、エチル基又はアミノエチル基を示し、Ｒ⁶は、水素原子、ヒドロキシエチル基、ヒドロキシプロピル基、メチル基又はエチル基から選ばれる少なくとも１種であって、Ｒ⁷は、アミノエチル基、ヒドロキシエチル基又はヒドロキシプロピル基から選ばれる少なくとも１種か、あるいは、式（ＩＩ）において、Ｒ⁵は、メチル基、エチル基、アミノエチル基、ヒドロキシエチル基又はヒドロキシプロピル基から選ばれる少なくとも１種であって、Ｒ⁶とＲ⁷は互いに結合して式（ＩＩ）中のＮ原子と共にピロリジン環又はピペラジン環を形成する。
＜５＞ 成分Ａが、テトラメチルアンモニウムヒドロキシドである、＜１＞又は＜４＞に記載の洗浄剤組成物。
＜６＞ 使用時における成分Ａの含有量は、０．１質量％以上が好ましく、０．５質量％以上がより好ましく、１．０質量％以上が更に好ましく、１．５質量％以上がより更に好ましい、＜１＞から＜５＞のいずれかに記載の洗浄剤組成物。
＜７＞ 使用時における成分Ａの含有量は、１５質量％以下が好ましく、１０質量％以下がより好ましく、７．５質量％以下が更に好ましく、５質量％以下がより更に好ましい、＜１＞から＜６＞のいずれかに記載の洗浄剤組成物。
＜８＞ 使用時における成分Ａの含有量は、０．１質量％以上１５質量％以下が好ましく、０．５質量％以上１０質量％以下がより好ましく、１．０質量％以上７．５質量％以下が更に好ましく、１．５質量％以上５質量％以下がより更に好ましい、＜１＞から＜７＞のいずれかに記載の洗浄剤組成物。
＜９＞ 成分ＢのＨＳＰの座標を（δｄ_B、δｐ_B、δｈ_B）としたとき、該成分ＢのＨＳＰの座標（δｄ_B、δｐ_B、δｈ_B）と成分座標Ｘ（δｄ＝１８．３、δｐ＝６．８、δｈ＝３．７）との距離（単位：ＭＰａ^0.5）が下記式を満たす、＜１＞から＜８＞のいずれかに記載の洗浄剤組成物。
距離＝［（δｄ_B－１８．３）²＋（δｐ_B－６．８）²＋（δｈ_B－３．７）²］^0.5
≦５．４５ＭＰａ^0.5
＜１０＞ 成分Ｂが、アセトフェノン、プロピオフェノン、ｐ－アニスアルデヒド、ｏ－アニスアルデヒド、ｐ－メチルアセトフェノン、テトラヒドロフラン、ジメトキシテトラヒドロフラン、メトキシシクロペンタン、ジフェニルエーテル、アニソール、フェネトール、ジエチレングリコールジエチルエーテル、ジプロピレングリコールジメチルエーテル、シクロヘキサノン、２－オクタノン及びベンズアルデヒドから選ばれる少なくとも１種である、＜１＞から＜９＞のいずれかに記載の洗浄剤組成物。
＜１１＞ 使用時における成分Ｂの含有量は、０．５質量％以上が好ましく、１質量％以上がより好ましく、３質量％以上が更に好ましく、５質量％以上がより更に好ましい、＜１＞から＜１０＞のいずれかに記載の洗浄剤組成物。
＜１２＞ 使用時における成分Ｂの含有量は、３０質量％以下が好ましく、２５質量％以下がより好ましく、２０質量％以下が更に好ましく、１５質量％以下がより更に好ましい、＜１＞から＜１１＞のいずれかに記載の洗浄剤組成物。
＜１３＞ 使用時における成分Ｂの含有量は、０．５質量％以上３０質量％以下が好ましく、１質量％以上２５質量％以下がより好ましく、３質量％以上２０質量％以下が更に好ましく、５質量％以上１５質量％以下がより更に好ましい、＜１＞から＜１２＞のいずれかに記載の洗浄剤組成物。
＜１４＞ 使用時における成分Ａの含有量が０．１質量％以上１５質量％以下であり、
使用時における成分Ｂの含有量が０．５質量％以上３０質量％以下である、＜１＞から＜１３＞のいずれかに記載の洗浄剤組成物。
＜１５＞ 成分Ａと成分Ｂとの質量比（Ａ／Ｂ）は、０．０５以上が好ましく、０．０８以上がより好ましく、０．１以上が更に好ましく、０．１５以上がより更に好ましい、＜１＞から＜１４＞のいずれかに記載の洗浄剤組成物。
＜１６＞ 成分Ａと成分Ｂとの質量比（Ａ／Ｂ）は、２以下が好ましく、１以下がより好ましく、０．８以下が更に好ましく、０．５以下がより更に好ましい、＜１＞から＜１５＞のいずれかに記載の洗浄剤組成物。
＜１７＞ 成分Ａと成分Ｂとの質量比（Ａ／Ｂ）は、０．０５以上２以下が好ましく、０．０８以上１以下がより好ましく、０．１以上０．８以下が更に好ましく、０．１５以上０．５以下がより更に好ましい、＜１＞から＜１６＞のいずれかに記載の洗浄剤組成物。
＜１８＞ 使用時における成分Ｃの含有量は、６９．９質量%以上であって、７０質量％以上が好ましく、７５質量％以上がより好ましく、８０質量％以上が更に好ましい、＜１＞から＜１７＞のいずれかに記載の洗浄剤組成物。
＜１９＞ 使用時における成分Ｃの含有量は、９９．４質量％以下であって、９５質量％以下が好ましく、９０質量％以下がより好ましく、８５質量％以下が更に好ましい、＜１＞から＜１８＞のいずれかに記載の洗浄剤組成物。
＜２０＞ 使用時における成分Ｃの含有量は、６９．９質量％以上９９．４質量％以下であって、７０質量％以上９５質量％以下が好ましく、７５質量％以上９０質量％以下がより好ましく、８０質量％以上８５質量％以下が更に好ましい、＜１＞から＜１９＞のいずれかに記載の洗浄剤組成物。
＜２１＞ 洗浄剤組成物の使用時における有機物の総含有量は、４０質量％以下が好ましく、３５質量％以下がより好ましく、３０質量％以下が更に好ましく、２５質量％以下がより更に好ましく、２０質量％以下がより更に好ましい、＜１＞から＜２０＞のいずれかに記載の洗浄剤組成物。
＜２２＞ 洗浄剤組成物の使用時における有機物の総含有量は、０．５質量％以上が好ましく、１質量％以上がより好ましく、３質量％以上が更に好ましく、５質量％以上がより更に好ましい、＜１＞から＜２１＞のいずれかに記載の洗浄剤組成物。
＜２３＞ 洗浄剤組成物の使用時における有機物の総含有量は、０．５質量％以上４０質量％以下が好ましく、１質量％以上３５質量％以下がより好ましく、３質量％以上３０質量％以下が更に好ましく、５質量％以上２５質量％以下がより更に好ましく、５質量％以上２０質量％以下がより更に好ましい、＜１＞から＜２２＞のいずれかに記載の洗浄剤組成物。
＜２４＞ 窒素含有化合物及びリン含有化合物を実質的に含まない、＜１＞から＜２３＞のいずれかに記載の洗浄剤組成物。
＜２５＞ 洗浄剤組成物中の窒素含有化合物及びリン含有化合物の合計含有量が０．１質量％未満であり、０．０５質量％以下が好ましく、０．０１質量％以下がより好ましく、０質量％が更に好ましい、＜１＞から＜２４＞のいずれかに記載の洗浄剤組成物。
＜２６＞ 樹脂マスクが、露光及び現像の少なくとも一方の処理が施されたネガ型ドライフィルムレジストである、＜１＞から＜２５＞のいずれかに記載の洗浄剤組成物。
＜２７＞ ＜１＞から＜２６＞のいずれかに記載の洗浄剤組成物で、樹脂マスクが付着した被洗浄物から樹脂マスクを剥離する工程を含む、洗浄方法。
＜２８＞ 被洗浄物が、電子部品の製造中間物である、＜２７＞に記載の洗浄方法。
＜２９＞ ＜１＞から＜２６＞のいずれかに記載の洗浄剤組成物で樹脂マスクが付着した被洗浄物から樹脂マスクを剥離する工程を含む、電子部品の製造方法。
＜３０＞ ＜１＞から＜２６＞のいずれかに記載の洗浄剤組成物の、電子部品の製造における洗浄剤としての使用。
＜３１＞ ＜２７＞又は＜２８＞に記載の洗浄方法及び＜２９＞に記載の電子部品の製造方法のいずれかに使用するためのキットであって、
成分Ａを含有する溶液（第１液）と、成分Ｂを含有する溶液（第２液）とを、相互に混合されない状態で含み、
第１液及び第２液の少なくとも一方は、成分Ｃの一部又は全部を更に含有し、
第１液と第２液とは使用時に混合されるキット。<2> The cleaning composition according to <1>, wherein component A is an inorganic alkali.
<3> Component A is at least one inorganic alkali selected from sodium hydroxide, potassium hydroxide, lithium hydroxide, calcium hydroxide, sodium carbonate, potassium carbonate, sodium silicate and potassium silicate, <1> or The cleaning composition according to <2>.
<4> Component A is at least one organic alkali selected from quaternary ammonium hydroxides represented by the following formula (I) and amines represented by the following formula (II), <1> The cleaning composition according to .

In formula (I) above, R ¹ , R ² , R ³ and R ⁴ are each independently at least one selected from a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, a hydroxyethyl group and a hydroxypropyl group. is.

^In the above ^formula (II), R5 represents a hydrogen atom, a methyl group, an ethyl group or an aminoethyl group, and R6 represents at least a hydrogen atom, a hydroxyethyl group, a hydroxypropyl group, a methyl group or an ethyl group. 1, wherein R ⁷ is at least one selected from an aminoethyl group, a hydroxyethyl group, or a hydroxypropyl group, or in formula (II), R ⁵ is a methyl group, an ethyl group, an aminoethyl group , a hydroxyethyl group or a hydroxypropyl group, and R ⁶ and R ⁷ are bonded to each other to form a pyrrolidine ring or piperazine ring with the N atom in formula (II).
<5> The cleaning composition according to <1> or <4>, wherein component A is tetramethylammonium hydroxide.
<6> The content of component A at the time of use is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, still more preferably 1.0% by mass or more, and more preferably 1.5% by mass or more. The detergent composition according to any one of <1> to <5>, which is more preferable.
<7> The content of Component A at the time of use is preferably 15% by mass or less, more preferably 10% by mass or less, still more preferably 7.5% by mass or less, and even more preferably 5% by mass or less, <1> The cleaning composition according to any one of <6>.
<8> The content of component A at the time of use is preferably 0.1% by mass or more and 15% by mass or less, more preferably 0.5% by mass or more and 10% by mass or less, and 1.0% by mass or more and 7.5% by mass. % or less, and even more preferably 1.5% by mass or more and 5% by mass or less, the detergent composition according to any one of <1> to <7>.
<9> When the coordinates of the HSP of the component B are (δd _B , δp _B , δh _B ), the coordinates of the HSP of the component B (δd _B , δp _B , δh _B ) and the component coordinate X (δd=18. 3, δp = 6.8, δh = 3.7) and the distance (unit: MPa ^0.5 ) satisfies the following formula, the cleaning composition according to any one of <1> to <8>.
Distance=[(δd _B −18.3) ² +(δp _B −6.8) ² +(δh _B −3.7) ² ] ^0.5
≤ 5.45 MPa ^0.5
<10> Component B is acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, diphenyl ether, anisole, phenetol, diethylene glycol diethyl ether, dipropylene glycol. The detergent composition according to any one of <1> to <9>, which is at least one selected from dimethyl ether, cyclohexanone, 2-octanone and benzaldehyde.
<11> The content of component B at the time of use is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 3% by mass or more, and even more preferably 5% by mass or more. <1> The cleaning composition according to any one of <10> to <10>.
<12> The content of component B at the time of use is preferably 30% by mass or less, more preferably 25% by mass or less, still more preferably 20% by mass or less, and even more preferably 15% by mass or less. 11> The cleaning composition according to any one of items 11>.
<13> The content of component B at the time of use is preferably 0.5% by mass or more and 30% by mass or less, more preferably 1% by mass or more and 25% by mass or less, even more preferably 3% by mass or more and 20% by mass or less, The detergent composition according to any one of <1> to <12>, which is more preferably 5% by mass or more and 15% by mass or less.
<14> The content of component A at the time of use is 0.1% by mass or more and 15% by mass or less,
The cleaning composition according to any one of <1> to <13>, wherein the content of component B at the time of use is 0.5% by mass or more and 30% by mass or less.
<15> The mass ratio (A/B) between component A and component B is preferably 0.05 or more, more preferably 0.08 or more, still more preferably 0.1 or more, and even more preferably 0.15 or more. , the cleaning composition according to any one of <1> to <14>.
<16> The mass ratio (A/B) of component A to component B is preferably 2 or less, more preferably 1 or less, still more preferably 0.8 or less, and even more preferably 0.5 or less, <1> The cleaning composition according to any one of <15>.
<17> The mass ratio (A/B) between component A and component B is preferably 0.05 or more and 2 or less, more preferably 0.08 or more and 1 or less, and further preferably 0.1 or more and 0.8 or less, The detergent composition according to any one of <1> to <16>, which is more preferably 0.15 or more and 0.5 or less.
<18> The content of component C at the time of use is 69.9% by mass or more, preferably 70% by mass or more, more preferably 75% by mass or more, and still more preferably 80% by mass or more, from <1> The cleaning composition according to any one of <17>.
<19> The content of Component C at the time of use is 99.4% by mass or less, preferably 95% by mass or less, more preferably 90% by mass or less, and even more preferably 85% by mass or less, from <1><18> The cleaning composition according to any one of <18>.
<20> The content of component C at the time of use is 69.9% by mass or more and 99.4% by mass or less, preferably 70% by mass or more and 95% by mass or less, and more preferably 75% by mass or more and 90% by mass or less. The detergent composition according to any one of <1> to <19>, preferably 80% by mass or more and 85% by mass or less, more preferably.
<21> The total content of organic matter when the cleaning composition is used is preferably 40% by mass or less, more preferably 35% by mass or less, still more preferably 30% by mass or less, and even more preferably 25% by mass or less, The cleaning composition according to any one of <1> to <20>, which is more preferably 20% by mass or less.
<22> The total content of organic matter when the cleaning composition is used is preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 3% by mass or more, and even more preferably 5% by mass or more. The preferred cleaning composition according to any one of <1> to <21>.
<23> The total content of organic matter when the cleaning composition is used is preferably 0.5% by mass or more and 40% by mass or less, more preferably 1% by mass or more and 35% by mass or less, and 3% by mass or more and 30% by mass. The detergent composition according to any one of <1> to <22>, which is more preferably 5% by mass or more and 25% by mass or less, even more preferably 5% by mass or more and 20% by mass or less.
<24> The cleaning composition according to any one of <1> to <23>, which is substantially free of nitrogen-containing compounds and phosphorus-containing compounds.
<25> The total content of the nitrogen-containing compound and the phosphorus-containing compound in the cleaning composition is less than 0.1% by mass, preferably 0.05% by mass or less, more preferably 0.01% by mass or less, and 0 The cleaning composition according to any one of <1> to <24>, wherein % by mass is more preferable.
<26> The cleaning composition according to any one of <1> to <25>, wherein the resin mask is a negative dry film resist subjected to at least one of exposure and development.
<27> A cleaning method, comprising the step of peeling off the resin mask from the object to be cleaned with the cleaning composition according to any one of <1> to <26>.
<28> The cleaning method according to <27>, wherein the object to be cleaned is an intermediate in the production of an electronic component.
<29> A method for producing an electronic component, comprising a step of removing the resin mask from the object to be cleaned with the cleaning composition according to any one of <1> to <26>.
<30> Use of the cleaning composition according to any one of <1> to <26> as a cleaning agent in the manufacture of electronic components.
<31> A kit for use in either the cleaning method according to <27> or <28> or the method for manufacturing an electronic component according to <29>,
A solution containing component A (first liquid) and a solution containing component B (second liquid), which are not mixed with each other,
At least one of the first liquid and the second liquid further contains a part or all of component C,
A kit in which the first liquid and the second liquid are mixed at the time of use.

EXAMPLES The present disclosure will be specifically described below with reference to Examples, but the present disclosure is not limited by these Examples.

1. About the physical properties (HSP coordinates and distance) of organic solvents (component B, non-component B) HSP coordinates (δd ₁ , δp ₁ , δh ₁ ) of organic solvents are obtained from the computer software “HSPiP: Hansen Solubility Parameters in Practice ” was calculated using. Then, the distance between the HSP coordinates (δd ₁ , δp ₁ , δh ₁ ) of the organic solvent and the component coordinates (δd=18.3, δp=6.8, δh=3.7) was calculated by the following formula. Table 1 shows the results.
distance=[(δd ₁ -18.3) ² +(δp ₁ -6.8) ² +(δh ₁ -3.7) ² ] ^0.5

2. Preparation of Cleaning Compositions of Examples 1 to 22 and Comparative Examples 1 to 9 In a 200 mL tall glass beaker, 2.5 g of potassium hydroxide (component A), 15.0 g of acetophenone (component B) and water were added in terms of active ingredients. The detergent composition of Example 1 was prepared by blending 82.5 g of (Component C) and stirring and mixing. Then, the detergent compositions of Examples 2 to 22 and Comparative Examples 1 to 9 were blended at the same time in the same manner as in Example 1, if they contained components other than components A to C, and the results are shown in Table 2. It was prepared with a composition ratio that would be an effective component. Table 2 shows the content (% by mass, active ingredient) of each component in each cleaning composition.

The following components were used for the detergent compositions of Examples 1-22 and Comparative Examples 1-9.
(Component A)
A1: Potassium hydroxide [manufactured by Kanto Chemical Co., Ltd., special grade, solid content 48% by mass]
A2: Sodium hydroxide [manufactured by Kanto Chemical Co., Ltd., special grade, solid content 48% by mass]
A3: Tetramethylammonium hydroxide [manufactured by Showa Denko KK, TMAH (25%)]
(Component B)
B1: Acetophenone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
B2: Propiophenone [manufactured by Tokyo Chemical Industry Co., Ltd.]
B3: p-anisaldehyde [manufactured by Fujifilm Wako Pure Chemical Industries, special grade]
B4: o-anisaldehyde [manufactured by SIGMA-ALDRICH]
B5: p-methylacetophenone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B6: Tetrahydrofuran [Fuji Film Wako Pure Chemical Co., Ltd., special grade]
B7: Dimethoxytetrahydrofuran [manufactured by Tokyo Chemical Industry Co., Ltd.]
B8: Methoxycyclopentane [manufactured by Tokyo Chemical Industry Co., Ltd.]
B9: Diphenyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
B10: Anisole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
B11: phenetole [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B12: diethylene glycol diethyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B13: dipropylene glycol dimethyl ether [manufactured by Fuji Film Wako Chemical Co., Ltd.]
B14: Cyclohexanone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B15: 2-octanone [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B16: benzaldehyde [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
(Non-component B)
B17: Butyl diglycol [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
B18: Diethylene glycol dimethyl ether [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., special grade]
B19: butyl acetate [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
B20: phenyl diglycol [manufactured by Tokyo Chemical Industry Co., Ltd.]
B21: ethylene glycol [manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., first grade]
(Component C)
Water: pure water of 1 μS/cm or less produced with a water purifier G-10DSTSET manufactured by Organo Co., Ltd.

3. Evaluation of Cleaning Compositions The resin mask removability of the prepared cleaning compositions of Examples 1 to 22 and Comparative Examples 1 to 9 was evaluated.

[Preparation of test piece for resin mask 1]
A photosensitive film for direct imaging (direct drawing) (manufactured by Hitachi Chemical Co., Ltd., Fotec RD-1225, thickness 25 μm, negative type dry film resist) is applied to a glass epoxy multilayer substrate (manufactured by Hitachi Chemical Co., Ltd., MCL-E-679FG). Laminate on the surface under the following conditions, selectively expose and harden the exposed area (exposure process), remove the unexposed area by developing (development process), and create a resist pattern (negative type of pattern shape A substrate having a resin mask) was obtained. Then, a test piece (4 cm×4.5 cm) was obtained by copper plating the region from which the unexposed portion was removed by the development treatment.
(1) Lamination: Using a clean roller (RY-505Z, manufactured by Rayon Kogyo Co., Ltd.) and a vacuum applicator (VA7024/HP5, manufactured by Rohm & Haas) at a roller temperature of 50°C, a roller pressure of 1.4 Bar, and a processing time of 30 done in seconds.
(2) Exposure: Using a direct drawing apparatus for printed circuit boards (Mercurex LI-9500, manufactured by SCREEN Graphic and Precision Solutions Co., Ltd.), exposure is performed at an exposure dose of 15 mJ/cm ² .
(3) Pattern shape: L/S = 20 μm/20 μm striped pattern (4) Development: Substrate developing device (LT-980366, manufactured by Yangbo Science and Technology Co., Ltd.), using 1% sodium carbonate aqueous solution at 30 ° C. , a spray pressure of 0.2 MPa for 47 seconds to remove the resin mask from the unexposed areas.

[Preparation of test piece for resin mask 2]
A photosensitive film (manufactured by Hitachi Chemical Co., Ltd., HP-1060, thickness 60 μm, negative type dry film resist) is laminated on the surface of a glass epoxy multilayer substrate under the following conditions, and after selective exposure treatment and curing of the exposed area. (Exposure step), the unexposed portion was removed by development (development step) to obtain a substrate having a resist pattern (pattern-shaped negative resin mask). Then, a test piece (4 cm×4 cm) was obtained by copper plating the region from which the unexposed portion was removed by the development treatment.
(1) Lamination: Using a clean roller (RY-505Z, manufactured by Rayon Industrial Co., Ltd.) and a vacuum applicator (VA7024/HP5, manufactured by Rohm & Haas).
(2) Exposure: Exposure is performed using a direct drawing apparatus for printed circuit boards (Mercurex LI-9500, manufactured by SCREEN Graphic and Precision Solutions Co., Ltd.).
(3) Pattern shape: L/S = 20 μm/20 μm striped pattern (4) Development: Substrate development device (LT-980366, manufactured by Yangbo Science and Technology Co., Ltd.), unexposed using 1% sodium carbonate aqueous solution Remove the resin mask from the part.

[Washing test]
100 g of each detergent composition was added to a tall glass beaker of 200 mL, heated to 60° C., and stirred at a rotation speed of 600 rpm using a rotor [fluororesin (PTFE), φ8 mm×25 mm]. Immerse the test piece for 4 minutes. Then, after immersing and rinsing in a rinsing bath in which 100 g of water is added to a 100 mL glass beaker, it is naturally dried.

[Evaluation of resin mask removability (peeling rate (%))]
Using an optical microscope "Digital Microscope VHX-2000" (manufactured by KEYENCE CORPORATION), the presence or absence of a resin mask remaining on each part of the test piece after the cleaning test was magnified 300 times and visually confirmed. The peeling rate (ratio (%) of the area where the resin mask was removed when the total area where the resin mask was present before the washing test was taken as 100) was calculated. Table 2 shows the results.

[Influence on substrate]
Add 100 g of each detergent composition to a 250 mL wide-mouthed polypropylene bottle, immerse a glass epoxy multilayer substrate (2 cm x 5 cm), store at 60°C for 7 days, rinse with water, and visually inspect the surface of the substrate after drying. Table 2 shows the results of observation and evaluation according to the following evaluation criteria.
A: No change from before the test B: The substrate surface was altered

As shown in Table 2 above, the detergent compositions of Examples 1 to 22 are comparable to Comparative Examples 1 to 7 and 9, which do not contain component A or component B, and to Comparative Example 8, in which the content of component C is not within the predetermined range. In comparison, it was found to be excellent in resin mask removability. Further, the cleaning compositions of Examples 1 to 22, in which the content of Component C was in the range of 69.9 to 99.4% by mass, were compared with Comparative Example 8, in which the content of Component C was less than 69.9% by mass. Influence on the organic resin-containing substrate was reduced compared to . Furthermore, the detergent compositions of Examples 1 to 22 had an organic matter content of 40% by mass or less, and were considered to have a low wastewater treatment load.

ADVANTAGE OF THE INVENTION According to this indication, the cleaning composition for resin mask peeling which is excellent in resin mask removability can be provided. Therefore, the cleaning composition of the present disclosure is useful as a cleaning composition used in the manufacturing process of electronic components, shortening the cleaning process of electronic components to which resin masks are attached, and improving the performance and performance of manufactured electronic components. Reliability can be improved, and productivity of semiconductor devices can be improved.

Claims (12)

containing an alkaline agent (component A), an organic solvent (component B) and water (component C),
Component A is an inorganic alkali,
component B is at least one selected from acetophenone, propiophenone, p-anisaldehyde, o-anisaldehyde, p-methylacetophenone, tetrahydrofuran, dimethoxytetrahydrofuran, methoxycyclopentane, anisole, phenetole, cyclohexanone and benzaldehyde;
the coordinates of the Hansen solubility parameters of component B are within a sphere of radius 5.45 MPa ^0.5 centered at δd = 18.3, δp = 6.8, δh = 3.7;
A cleaning composition for removing a resin mask, wherein the content of Component C at the time of use is 69.9% by mass or more and 99.4% by mass or less. The content of component A at the time of use is 0.1% by mass or more and 15% by mass or less,
The cleaning composition according to claim 1, wherein the content of component B at the time of use is 0.5% by mass or more and 30% by mass or less. 3. The composition according to claim 1 or 2 , wherein the coordinates of the Hansen solubility parameters of component B are within a sphere of radius 2.79 MPa ^0.5 centered at δd = 18.3, δp = 6.8, δh = 3.7. A cleaning composition as described. The cleaning composition according to any one of claims 1 to 3 , wherein the mass ratio (A/B) of component A to component B is 0.05 or more and 2 or less. 5. The cleaning method according to any one of claims 1 to 4 , wherein the total content of organic matter derived from component A, component B and optional components when the cleaning composition is used is 0.5% by mass or more and 40% by mass or less. agent composition. The cleaning composition according to any one of claims 1 to 5 , which is substantially free of nitrogen-containing compounds and phosphorus-containing compounds. The cleaning composition according to any one of claims 1 to 6 , wherein the resin mask is a negative dry film resist subjected to at least one of exposure and development. A cleaning method comprising the step of peeling off the resin mask from an object to be cleaned with the cleaning composition according to any one of claims 1 to 7 . 9. The cleaning method according to claim 8 , wherein the object to be cleaned is an intermediate in the production of electronic components. A method for manufacturing an electronic component, comprising the step of peeling off the resin mask from an object to be cleaned with the cleaning composition according to any one of claims 1 to 7 . Use of the cleaning composition according to any one of claims 1 to 7 as a cleaning agent in the manufacture of electronic parts. A kit for use in either the cleaning method according to claim 8 or 9 or the electronic component manufacturing method according to claim 10 ,
A solution containing component A (first liquid) and a solution containing component B (second liquid), which are not mixed with each other,
At least one of the first liquid and the second liquid further contains a part or all of component C,
A kit in which the first liquid and the second liquid are mixed at the time of use.