KR101328097B1 - A color resist remover composition for tft-lcd preparation - Google Patents
A color resist remover composition for tft-lcd preparation Download PDFInfo
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- KR101328097B1 KR101328097B1 KR1020070000865A KR20070000865A KR101328097B1 KR 101328097 B1 KR101328097 B1 KR 101328097B1 KR 1020070000865 A KR1020070000865 A KR 1020070000865A KR 20070000865 A KR20070000865 A KR 20070000865A KR 101328097 B1 KR101328097 B1 KR 101328097B1
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- KR
- South Korea
- Prior art keywords
- color resist
- ether
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- 239000000203 mixture Substances 0.000 title claims abstract description 52
- -1 hydroxide compound Chemical class 0.000 claims abstract description 43
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 16
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 13
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims abstract description 9
- 150000003464 sulfur compounds Chemical class 0.000 claims abstract description 8
- 125000005210 alkyl ammonium group Chemical group 0.000 claims abstract description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 22
- 229910001854 alkali hydroxide Inorganic materials 0.000 claims description 8
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims description 7
- 239000000908 ammonium hydroxide Substances 0.000 claims description 7
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 6
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 6
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 5
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 5
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 4
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 3
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 claims description 2
- BQCCJWMQESHLIT-UHFFFAOYSA-N 1-propylsulfinylpropane Chemical compound CCCS(=O)CCC BQCCJWMQESHLIT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims 2
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 12
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000003960 organic solvent Substances 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract description 2
- 230000008901 benefit Effects 0.000 abstract description 2
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 230000002950 deficient Effects 0.000 abstract description 2
- 150000004679 hydroxides Chemical class 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- LIWAQLJGPBVORC-UHFFFAOYSA-N ethylmethylamine Chemical compound CCNC LIWAQLJGPBVORC-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229910019923 CrOx Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910001413 alkali metal ion Inorganic materials 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000004996 alkyl benzenes Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- HIFJUMGIHIZEPX-UHFFFAOYSA-N sulfuric acid;sulfur trioxide Chemical compound O=S(=O)=O.OS(O)(=O)=O HIFJUMGIHIZEPX-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/40—Monoamines or polyamines; Salts thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Optical Filters (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 티에프티 엘시디의 칼라필터 공정 중 발생하는 불량의 기판을 재사용하기 위해 칼라레지스트 패턴 및 오버코트를 제거하는 티에프티 엘시디용 칼라레지스트 박리액 조성물에 관한 것으로, 보다 상세하게는 (a) 무기 알칼리 하이드록사이드, 탄소수 1 내지 4의 알킬기를 갖는 알킬 암모늄 하이드록사이드 및 페닐알킬 암모늄 하이드록사이드로 이루어진 군으로부터 선택되는 하이드록사이드 화합물 1 내지 50 중량%, (b) 극성을 가진 황화합물 5 내지 30 중량%, (c) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 에테르 5 내지 35 중량%, (d) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 디알킬 에테르 2 내지 30 중량%, (e) 수용성 아민 화합물 2 내지 30 중량%, 및 (f) 잔량의 물을 포함하는 칼라 필터용 박리액 조성물에 관한 것이다.The present invention relates to a color resist stripping liquid composition for a TFT LCD to remove a color resist pattern and an overcoat in order to reuse a defective substrate generated during the color filter process of TF LCD. More specifically, (a) an inorganic alkali 1 to 50% by weight of a hydroxide compound selected from the group consisting of hydroxides, alkyl ammonium hydroxides having alkyl groups of 1 to 4 carbon atoms and phenylalkyl ammonium hydroxides, (b) sulfur compounds having a polarity of 5 to 30 % By weight, (c) 5 to 35% by weight alkylene glycol ethers having alkyl groups of 1 to 4 carbon atoms, (d) 2 to 30% by weight alkylene glycol dialkyl ethers having alkyl groups of 1 to 4 carbon atoms, (e) It relates to a peeling liquid composition for a color filter comprising 2 to 30% by weight of a water-soluble amine compound, and (f) a residual amount of water.
본 발명의 칼라 레지스트 박리액 조성물은 칼라 레지스트와 오버코트를 단시간 내에 제거할 수 있고, 하부의 금속배선의 부식을 최소화할 수 있으며, 후속의 린스 공정에서 이소프로필알콜, 디메틸설폭사이드와 같은 유기용제를 사용할 필요 없이 물만으로 린스 할 수 있는 장점이 있어, 종래 칼라 레지스트 패턴의 제거가 곤란하여 대부분 폐기되었던 칼라 필터 기판의 재사용을 가능케 한다.The color resist stripper composition of the present invention can remove the color resist and the overcoat in a short time, minimize the corrosion of the lower metal wiring, and in the subsequent rinsing process, organic solvents such as isopropyl alcohol and dimethyl sulfoxide Since there is an advantage that it can be rinsed with water only without the need for use, it is difficult to remove the conventional color resist pattern, thereby enabling reuse of the mostly discarded color filter substrate.
칼라 레지스트, 오버코트, 박리액, 티에프티 엘시디 Color resist, overcoat, stripping solution, TF LCD
Description
본 발명은 티에프티 엘시디(TFT-LCD)용 칼라 레지스트 박리액 조성물에 관한 것으로서, 보다 상세하게는 칼라 필터 공정 중에서 발생하는 불량 기판의 칼라 레지스트 및 칼라 레지스트 포함 오버코트를 제거하여 블랙마스크(Black Mask) 또는 유리기판으로 재사용하기 위한 티에프티 엘시디용 칼라 레지스트 박리액 조성물에 관한 것이다.The present invention relates to a color resist stripper composition for TFT-LCD, and more particularly, to remove a color resist and a color resist overcoat of a defective substrate generated during a color filter process, thereby removing a black mask. Or it relates to a color resist stripper composition for TFT LCD for reuse with a glass substrate.
칼라 필터 기판은 칼라 필터 적녹청 패턴과 각 화소 사이의 누설광을 차단하고 대비를 향상시키기 위한 역할을 하는 블랙 매트릭스 및 보호막인 오버코트, 액정 셀에 전압을 인가하는 공통 전극으로 구성되어 있다.The color filter substrate is composed of a color filter red cyan pattern and a black matrix, an overcoat, which is a protective film, and a common electrode for applying a voltage to the liquid crystal cell to block leakage light between each pixel and to improve contrast.
칼라 필터를 제조하는 공정은 다음과 같다. 먼저, 용도에 따라 유리기판 위에 블랙 매트릭스 재료로 사용되는 Cr/CrOx 또는 유기재료를 유리기판에 도포하고 패턴을 형성한다. 블랙 마스크 패턴을 형성한 후, 색상을 구현하기 위한 칼라 레지스트 패턴을 사진공정기술에 의해 형성한다. 칼라 레지스트를 유리기판 위에 도포하고 노광시켜, 광중합반응에 의하여 칼라 레지스트를 경화시킨다. 노광이 끝난 후 칼라 레지스트는 현상에 의해 노광되지 않은 부분이 제거되고, 소성과정을 거치게 된다.The process of manufacturing a color filter is as follows. First, Cr / CrOx or an organic material, which is used as a black matrix material, is coated on a glass substrate, and a pattern is formed on the glass substrate, depending on the use. After forming a black mask pattern, a color resist pattern for realizing color is formed by a photolithography technique. The color resist is applied onto a glass substrate and exposed to light to cure the color resist by photopolymerization. After the exposure is completed, the color resist is removed by undeveloped portions, and undergoes a calcination process.
칼라 레지스트는 안료분산법, 염색법, 전착법 등에 의해 제조되며, 이 중 안료 분산법이 주로 사용된다. 여기에는 일반적으로 포토레지스트와 같은 감광 조성물인 광중합 개시제, 단량체, 바인더 등에 색상을 구현하는 유기 안료가 분산되어 있다. 광중합 개시제는 빛을 받아 라디칼을 발생시키는 고감도 화합물이며, 단량체는 라디칼에 의하여 중합반응 개시 후 고분자 형태로 결합되어 현상 용제에 녹지 않는 형태가 된다. 바인더는 상온에서 액체 상태의 단량체를 현상액으로부터 보호하며, 안료 분산의 안정화 및 적녹청 패턴의 내열성, 내광성, 내약품성 등의 신뢰성을 좌우한다.The color resist is produced by a pigment dispersion method, a dyeing method, an electrodeposition method, etc. Among these, the pigment dispersion method is mainly used. Generally, organic pigments that implement color are dispersed in photopolymerization initiators, monomers, binders, and the like, which are photosensitive compositions such as photoresists. The photopolymerization initiator is a highly sensitive compound that receives light to generate radicals, and the monomers are bound to a polymer form after the polymerization reaction is initiated by the radicals, thereby becoming insoluble in the developing solvent. The binder protects the monomer in the liquid state from the developer at room temperature, and determines the stability of the pigment dispersion and the reliability of heat resistance, light resistance, chemical resistance, etc. of the red cyan pattern.
현재 칼라 필터 공정에서 발생되는 불량 칼라 필터 기판의 칼라 레지스트는 한번 경화되면 패턴이 잘못된 부분만을 제거하여 수리하는 것이 거의 불가능하며, 또한 칼라 레지스트를 제거할 수 있는 용제가 거의 없었기 때문에 불량 칼라 필터는 수리 등의 재작업을 거치지 않고 바로 대부분 폐기 처리되고 있다.Defects generated in the current color filter process Once the color resist of the color filter substrate is cured, it is almost impossible to repair by removing only the wrong part of the pattern. Also, since the solvent that can remove the color resist is poor, the color filter is repaired. Most of them are disposed of immediately without rework.
상기 칼라 레지스트는 네가티브형 레지스트의 특성을 갖고 있는데, 일반적으로 네가티브형 레지스트의 경우 포지티브형에 비해 박리 제거가 어렵기 때문에 네가티브형 레지스트는 강력한 박리 성능이 요구되었다.The color resist has the characteristics of a negative resist. In general, the negative resist has a strong peeling performance because it is difficult to remove the peel compared with the positive type.
이런 이유로 종래에는 무기계 박리액과 플라즈마를 이용한 RIE(reactive ion etching)을 사용하였다. 그러나, 상기 무기계 박리액의 경우, 황산, 질산, 발연황산, 질산과 과산화수소의 혼합액 등을 120 ℃ 이상의 고온으로 가열하여 사용하게 되면, 작업자들의 안전성에 악영향을 미칠 뿐 아니라 가열에 따른 화재위험성 증대로 취급시에 세심한 주의를 요해야만 하는 불편함이 존재하였다. 예를 들면, 알킬벤젠술폰산과 비점이 150 ℃ 이상인 비할로겐화 방향족 탄화수소계 용제의 혼합액이 일본특허 공개공보 소51-72503호에, 알킬아릴술폰산과 수성 방향족술폰산, 비할로겐화 방향족 탄화수소계 용제의 혼합액이 미국특허 제 4,165,294호에, 유기술폰산과 1,2-디하이드록시벤젠에 극성 또는 비극성 유기용제를 첨가한 스트리퍼가 유럽특허 공보 제 0119337호에 개시되어 있다.For this reason, conventionally, RIE (reactive ion etching) using an inorganic stripping solution and plasma was used. However, in the case of the inorganic stripping solution, the use of sulfuric acid, nitric acid, fuming sulfuric acid, a mixture of nitric acid and hydrogen peroxide heated to a high temperature of more than 120 ℃, not only adversely affects the safety of workers but also increases the risk of fire due to heating There has been discomfort that requires careful attention in handling. For example, a mixture of an alkyl benzene sulfonic acid and a non-halogenated aromatic hydrocarbon solvent having a boiling point of 150 ° C. or higher is disclosed in Japanese Patent Laid-Open No. 51-72503, and a mixture of alkyl aryl sulfonic acid, an aqueous aromatic sulfonic acid and a non-halogenated aromatic hydrocarbon solvent. In US Pat. No. 4,165,294, a stripper in which a polar or nonpolar organic solvent is added to eutectic acid and 1,2-dihydroxybenzene is disclosed in EP 0119337.
또한, 플라즈마를 이용한 RIE(reactive ion etching)을 이용한 방법으로서, 일반적인 습식 에칭으로는 제거가 불가능한 경화된 칼라 레지스트의 에칭은 O2-RIE, SF6-RIE를 연속적으로 사용하여 제거하는 방법이 미국특허 제 5,756,239호에, 흡수층으로 폴리에스터, 폴리아미드, 노블락 레진을 사용하고 장벽층으로는 폴리실란, 폴리실록산, 유기실리콘 화합물, 실리카, 실리콘 니트리드의 혼합물을 사용하는 경화된 칼라 레지스트를 흡수층은 산소를 이용한 플라즈마로 장벽층은 육불화황이나 삼불화질소를 이용한 RIE을 사용하는 방법이 미국특허 제 5,059,500호에 개시되어 있다. 그러나, 이러한 플라즈마를 이용한 칼라 필터의 에칭은 고진공, 고에너지가 필요하며, 공정조건을 잡기가 어려우며, 대면적에는 사용하기 어렵다는 점과 장비의 고가 등과 같은 단점을 가지고 있다.In addition, a method using reactive ion etching (RIE) using plasma, in which the etching of the cured color resist, which cannot be removed by general wet etching, is continuously removed using O2-RIE and SF6-RIE. 5,756,239, a cured color resist using polyester, polyamide, and noblock resin as an absorbent layer and a mixture of polysilane, polysiloxane, organosilicon compound, silica, and silicon nitride as the barrier layer, and the absorbent layer using oxygen. The method of using RIE using sulfur hexafluoride or nitrogen trifluoride as a barrier layer with plasma is disclosed in US Pat. No. 5,059,500. However, the etching of the color filter using the plasma requires high vacuum, high energy, difficult to set the process conditions, difficult to use in a large area, and has the disadvantages such as expensive equipment.
이와 같이, 종래의 칼라 레지스트 제거방법으로는 안정적으로 대량의 칼라 레지스트를 제거하는 것이 곤란하거나, 작업자들의 안전성이 문제되거나, 생산성 또는 수율이 떨어지는 문제점이 있다.As described above, in the conventional color resist removal method, it is difficult to stably remove a large amount of color resist, there is a problem that the safety of workers, or productivity or yield is low.
따라서, 칼라 레지스트를 안전한 방법으로 대량으로 제거하는 방법이 요구되고 있는 실정이다.Therefore, there is a need for a method of removing a large amount of color resist in a safe manner.
본 발명은 상기한 종래기술의 문제점을 해결하기 위하여, 티에프티 엘시디의 칼라 필터 제조공정 중에 사용되는 칼라 레지스트 및 오버코트를 안전하게 다량으로 제거하기 위한 박리액 조성물을 제공하는 것을 목적으로 한다.In order to solve the above problems of the prior art, an object of the present invention is to provide a stripper composition for safely removing a large amount of color resist and overcoat used during the color filter manufacturing process of TF LCD.
상기 목적을 달성하기 위하여, 본 발명은 (a) 무기 알칼리 하이드록사이드, 탄소수 1 내지 4의 알킬기를 갖는 알킬 암모늄 하이드록사이드 및 페닐알킬 암모늄 하이드록사이드로 이루어진 군으로부터 선택되는 하이드록사이드 화합물 1 내지 50 중량%, (b) 극성을 가진 황화합물 5 내지 30 중량%, (c) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 에테르 5 내지 35 중량%, (d) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 디알킬 에테르 2 내지 30 중량%, (e) 수용성 아민 화합물 2 내지 30 중량%, 및 (f) 잔량의 물을 포함하는 칼라 레지스트용 박리액 조성물을 제공한다.In order to achieve the above object, the present invention is (a) an hydroxide compound selected from the group consisting of inorganic alkali hydroxide, alkyl ammonium hydroxide having an alkyl group having 1 to 4 carbon atoms and phenylalkyl ammonium hydroxide 1 To 50% by weight, (b) 5 to 30% by weight of sulfur compound having polarity, (c) 5 to 35% by weight of alkylene glycol ether having alkyl group of 1 to 4 carbon atoms, (d) having an alkyl group of 1 to 4 carbon atoms It provides a peeling liquid composition for a color resist comprising 2 to 30% by weight of alkylene glycol dialkyl ether, 2 to 30% by weight of (e) water-soluble amine compound, and (f) residual amount of water.
이하 본 발명을 더욱 상세히 설명한다.Hereinafter, the present invention will be described in more detail.
본 발명은 종래보다 칼라 레지스트 및 오버코트를 효과적으로 제거하고 대부분 폐기되었던 칼라 필터 기판을 재사용하기 위한 연구를 거듭한 결과, 특정 조성을 가진 박리액 조성물을 이용하면 칼라 레지스트 및 오버코트를 용이하게 제거할 수 있음을 발견하고 본 발명을 완성하기에 이르렀다.The present invention has been conducted to effectively remove color resists and overcoats and reuse color filter substrates, which have been mostly discarded, as a result of the present invention, and it is possible to easily remove color resists and overcoats using a stripper composition having a specific composition. To discover and complete the present invention.
이러한 본 발명의 박리액 조성물에 사용되는 (a) 하이드록사이드 화합물은 무기 알칼리 하이드록사이드, 탄소수 1 내지 4의 알킬기를 갖는 알킬 암모늄 하이드록사이드 및 페닐알킬 암모늄 하이드록사이드로 이루어진 군으로부터 선택되는 것이 바람직하다. 칼라 필터 공정은 잔류 금속에 큰 영향을 받지 않으므로 무기계 알칼리 하이드록사이드도 사용 가능하다. 상기 하이드록사이드 화합물의 함량은 전체 조성물에 대하여 1 내지 50 중량%가 바람직하며, 그 함량이 1 중량% 미만이면 칼라 레지스트를 구성하는 고분자 성분으로의 침투 능력이 떨어져 칼라 레지스트를 완전하게 제거하기 어렵고, 50 중량%를 초과하면 팽윤 현상만 심해지고 무기 알칼리 금속이 석출되면서 약액의 조성을 변화시켜 일정 조성에서는 층분리가 발생하여 성능에 악영향을 미친다. 또한, 알킬 암모늄 하이드록사이드 및 알킬알릴 암모늄 하이드록사이드는 안정하지 못하므로 물에 녹아 있는 상태로 사용하는 것이 바람직하다.The (a) hydroxide compound used in the stripper composition of the present invention is selected from the group consisting of inorganic alkali hydroxides, alkyl ammonium hydroxides having alkyl groups having 1 to 4 carbon atoms, and phenylalkyl ammonium hydroxides. It is preferable. The color filter process is not significantly affected by residual metals, so inorganic alkali hydroxides can also be used. The content of the hydroxide compound is preferably 1 to 50% by weight based on the total composition, when the content is less than 1% by weight, it is difficult to completely remove the color resist due to poor penetration into the polymer component constituting the color resist. If the content exceeds 50% by weight, only the swelling phenomenon is severe, and the inorganic alkali metal precipitates, thereby changing the composition of the chemical solution, and in a certain composition, layer separation occurs, adversely affecting performance. In addition, since alkyl ammonium hydroxide and alkylallyl ammonium hydroxide are not stable, it is preferable to use it in the state dissolved in water.
상기 (a)의 무기 알칼리 하이드록사이드는 리튬 하이드록사이드, 소듐 하이드록사이드, 포타슘 하이드록사이드 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것이 바람직하다. 상기 탄소수 1 내지 4의 알킬기를 갖는 알킬 암모늄 하이드록사이드는 테트라에틸 암모늄 하이드록사이드, 테트라메틸 암모늄 하이드록사이드, 테트라부틸 암모늄 하이드록사이드, 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것이 바람직하다. 또한, 상기 페닐알킬 암모늄 하이드록사이드는 벤질트리메틸암모늄하이드록사이드를 사용하는 것이 바람직하다.The inorganic alkali hydroxide of (a) is preferably selected from the group consisting of lithium hydroxide, sodium hydroxide, potassium hydroxide and mixtures thereof. The alkyl ammonium hydroxide having an alkyl group having 1 to 4 carbon atoms is preferably selected from the group consisting of tetraethyl ammonium hydroxide, tetramethyl ammonium hydroxide, tetrabutyl ammonium hydroxide, and mixtures thereof. Moreover, it is preferable to use the benzyl trimethyl ammonium hydroxide as said phenylalkyl ammonium hydroxide.
또한, 본 발명에서 사용하는 상기 (b) 극성을 가진 황화합물은 칼라레지스트 에 대한 침투력과 용해력이 뛰어나서 칼라레지스트의 고분자 사이에 침투하여 팽윤현상을 일으킨다. 극성을 가진 황화합물의 사용량은 전체 조성물에 대하여 5 내지 30 중량%가 바람직하며, 이때 그 함량이 5 중량% 미만이면 칼라 레지스트를 완전하게 제거하기 어렵고, 30 중량%를 초과하면 무기 알칼리 하이드록사이드 화합물과의 혼화가 저하하여 성능 향상이 기대되지 않는다. 본 발명에서 사용하는 극성을 가진 황화합물은 디메틸설폭사이드, 디에틸설폭사이드, 디프로필설폭사이드, 설포란 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 사용하는 것이 바람직하다.In addition, the sulfur compound having the polarity (b) used in the present invention is excellent in the penetration and dissolving power to the color resist to penetrate between the polymer of the color resist causing swelling phenomenon. The amount of the sulfur compound having a polarity is preferably 5 to 30% by weight based on the total composition, when the content is less than 5% by weight, it is difficult to completely remove the color resist, and when it exceeds 30% by weight, the inorganic alkali hydroxide compound It is not expected to improve performance due to reduced miscibility with. The polar sulfur compound used in the present invention is preferably used selected from the group consisting of dimethyl sulfoxide, diethyl sulfoxide, dipropyl sulfoxide, sulfolane and mixtures thereof.
상기 (c) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 에테르는 칼라레지스트에 대한 용해력과 표면장력을 저하시키는 능력이 뛰어나서 들떠있는 칼라레지스트와 유리면 사이에 작용하는 표면장력을 저하시켜 손쉽게 칼라레지스트가 스트립되도록 하며, 또한 상기 스트립된 칼라레지스트의 바인더나 폴리머 등을 용해하는 기능을 한다. 상기 알킬렌 글리콜 에테르의 사용량은 전체 조성물에 대하여 5 내지 35 중량%가 바람직하며, 이때 그 함량이 5 중량% 미만이면 칼라 레지스트를 완전하게 제거하기 어렵고, 35 중량%를 초과하면 무기 알칼리 금속이온의 활동성을 저해하여 성능 향상이 기대되지 않는다. 본 발명에서 사용하는 알킬렌 글리콜 에테르는 에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노부틸에테르, 트리에틸렌글리콜모노부틸에테르, 에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노메틸에테르, 트리에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸글리콜 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 사용하는 것이 바람직하다.The alkylene glycol ether having an alkyl group having 1 to 4 carbon atoms (c) is excellent in the ability to lower the solubility and surface tension of the color resist to reduce the surface tension acting between the floating color resist and the glass surface easily color resist And strip, and also dissolve the binder or polymer of the stripped color resist. The amount of the alkylene glycol ether is preferably 5 to 35% by weight based on the total composition, wherein if the content is less than 5% by weight, it is difficult to completely remove the color resist, and when it exceeds 35% by weight of the inorganic alkali metal ion Performance is not expected to be impaired. The alkylene glycol ether used in the present invention is ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, Preference is given to using those selected from the group consisting of ethylene glycol monoethyl glycol and mixtures thereof.
상기 (d) 탄소수 1 내지 4의 알킬기를 갖는 알킬렌 글리콜 디알킬 에테르는 칼라레지스트에 대한 용해력이 뛰어나서 칼라레지스트의 고분자 사슬에 침투하여 사슬을 끊고 풀어주는 역할을 하여 손쉽게 칼라레지스트가 스트립되도록 하며, 또한 상기 스트립된 칼라레지스트의 바인더나 폴리머 등을 용해하는 기능을 한다. 상기 알킬렌 글리콜 디알킬 에테르의 사용량은 전체 조성물에 대하여 2 내지 30 중량%가 바람직하며, 보다 바람직하게는 5 내지 30 중량%로 포함한다. 이때 그 함량이 2 중량% 미만이면 칼라 레지스트를 완전하게 제거하기 어렵고, 30 중량%를 초과하면 무기 알칼리 금속이온의 활동성을 저해하여 성능 향상이 기대되지 않는다. 본 발명에서 사용하는 알킬렌 글리콜 디알킬 에테르는 에틸렌 글리콜 디메틸 에테르, 디에틸렌 글리콜 디메틸 에테르, 트리에틸렌 글리콜 디메틸 에테르, 디에틸렌 글리콜 디에틸 에테르, 디프로필렌 글리콜 디메틸 에테르, 디에틸렌 글리콜 메틸 에틸 에테르 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것을 사용하는 것이 바람직하다.(D) The alkylene glycol dialkyl ether having an alkyl group having 1 to 4 carbon atoms is excellent in dissolving ability to the color resist to penetrate the polymer chain of the color resist to break and release the chain so that the color resist can be easily stripped, It also functions to dissolve the binder or polymer of the stripped color resist. The amount of the alkylene glycol dialkyl ether used is preferably 2 to 30% by weight, more preferably 5 to 30% by weight based on the total composition. At this time, if the content is less than 2% by weight, it is difficult to completely remove the color resist, and if the content exceeds 30% by weight, the activity of the inorganic alkali metal ion is inhibited and performance improvement is not expected. The alkylene glycol dialkyl ethers used in the present invention are ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, diethylene glycol diethyl ether, dipropylene glycol dimethyl ether, diethylene glycol methyl ethyl ether and these Preference is given to using those selected from the group consisting of mixtures of
상기 (e) 수용성 아민 화합물은 칼라 레지스트를 구성하는 고분자에 침투하고 칼라 레지스트를 유리 기판으로부터 분리하는 기능을 한다. 상기 수용성 아민 화합물의 함량은 전체 조성물에 대하여 2 내지 30 중량%가 바람직하며, 보다 바람직하게는 5 내지 30 중량%로 포함한다. 수용성 아민 화합물의 함량이 2 중량% 미만이면 칼라 레지스트로의 침투력이 약해져 칼라 레지스트가 완전하게 제거되지 못하고 무기 알칼리 하이드록사이드와 층분리가 발생하는 문제점이 있고, 30 중량%를 초과하면 무기 알칼리 금속이온의 활동성을 저해하여 성능을 향상시키지 못하는 문 제점이 있다. 상기 수용성 아민 화합물은 n-메틸메탄올아민, 모노메탄올아민, 에틸렌디아민 및 하이드록실 아민으로 이루어진 군으로부터 선택되는 것을 사용하는 것이 바람직하다.The water-soluble amine compound (e) penetrates into the polymer constituting the color resist and functions to separate the color resist from the glass substrate. The content of the water-soluble amine compound is preferably 2 to 30% by weight, more preferably 5 to 30% by weight based on the total composition. If the content of the water-soluble amine compound is less than 2% by weight, the penetrating power to the color resist is weakened, so that the color resist is not completely removed and inorganic alkali hydroxide and layer separation occur. There is a problem that does not improve the performance by inhibiting the activity of the ion. It is preferable to use the water-soluble amine compound selected from the group consisting of n-methylmethanolamine, monomethanolamine, ethylenediamine and hydroxyl amine.
또한, 본 발명에서 사용하는 (f) 물은 이온 교환 수지를 통해 여과한 순수가 바람직하며, 비저항이 18 (MΩ) 이상인 초순수를 사용하는 것이 더욱 바람직하다. 상기 물의 사용량은 박리액 조성물의 잔량으로 포함할 수 있으며, 바람직하게는 전체 조성물에 대하여 4 내지 49 중량%로 사용한다. 이때, 물의 함량이 4 중량% 미만이면 공정온도에서 상기 조성물의 조성이 변화하여 무기 알칼리 이온이 석출되어 상기 칼라필터용 박리액 조성물의 가사시간의 저하를 초래하는 문제점이 발생하고, 49 중량%를 초과하면 공정 온도에서 물의 증발로 인해 상기 칼라필터용 박리액 조성물의 손실이 많아지는 문제점이 있다.The water (f) used in the present invention is preferably pure water filtered through an ion exchange resin, and more preferably, ultrapure water having a specific resistance of 18 (MΩ) or more. The amount of water used may be included as a residual amount of the stripping solution composition, preferably 4 to 49% by weight based on the total composition. At this time, when the content of water is less than 4% by weight, the composition of the composition is changed at the process temperature, and inorganic alkali ions are precipitated, which causes a problem of lowering the pot life of the peeling liquid composition for the color filter. If exceeded, there is a problem that the loss of the peeling liquid composition for the color filter increases due to the evaporation of water at the process temperature.
이상과 같은 본 발명의 박리액 조성물은 종래와 비교하여 칼라 레지스트 및 오버코트를 쉽게 제거할 수 있고, 칼라 레지스트 제거공정 중의 하부의 금속배선의 부식을 최소화할 수 있다.As described above, the release liquid composition of the present invention can easily remove the color resist and the overcoat as compared with the conventional one, and can minimize the corrosion of the metal wiring under the color resist removal process.
이하 본 발명을 하기 실시예를 참조로 하여 보다 상세히 설명한다. 이들 실시예는 본 발명을 예시하기 위한 것일 뿐, 본 발명의 범위가 하기 실시예에 의하여 한정되는 것이 아님은 물론이다.Hereinafter, the present invention will be described in more detail with reference to the following examples. It is to be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
하기 실시예에 있어서 별도의 언급이 없으면 백분율 및 혼합비는 중량을 기준으로 한 것이다.In the following examples, unless stated otherwise, percentages and mixing ratios are by weight.
[실시예 1-12 및 비교예 1-22][Example 1-12 and Comparative Example 1-22]
성분 (a)~(f)의 함량을 각각 하기 표 1 및 2에 나타낸 비율로 혼합하여 각각 실시예 1-12 및 비교예 1~22의 칼라 레지스트 박리액 조성물을 제조하였다.The contents of components (a) to (f) were mixed at the ratios shown in Tables 1 and 2, respectively, to prepare color resist stripper compositions of Examples 1-12 and Comparative Examples 1 to 22, respectively.
[표 1][Table 1]
시
예room
city
Yes
화합물(a) hydroxide
compound
극성을 가진 황화합물(b)
Sulfur compounds with polarity
알킬렌글리콜 에테르(c)
Alkylene glycol ether
수용성 아민 화합물(e)
Water soluble amine compounds
[표 2][Table 2]
(주) 상기 표 1 및 2에서,(Note) In Tables 1 and 2 above,
EG : 에틸렌글리콜EG: ethylene glycol
nMEA : n-메틸에탄올아민nMEA: n-methylethanolamine
DMSO : 디메틸설폭사이드DMSO: dimethylsulfoxide
MEA : 모노에탄올아민MEA: Monoethanolamine
DESO : 디에틸설폭사이드DESO: diethyl sulfoxide
HDA : 하이드록실아민 HDA: hydroxylamine
[실험예][Experimental Example]
상기 실시예 1-12 및 비교예 1-22에서 제조한 칼라레지스트 박리액 조성물에 대한 성능평가를 하기 공정의 칼라 필터 기판을 사용하여 다음과 같이 실시하였다.The performance evaluation of the color resist stripper composition prepared in Example 1-12 and Comparative Example 1-22 was carried out as follows using the color filter substrate of the following process.
칼라color 레지스트Resist 제거 시험 Removal test
시편 제조Specimen Manufacturing
하부에 Cr/CrOx이 증착되어 있는 LCD corning glass에 칼라필터 패턴을 만들고, 칼라 레지스트는 적, 녹, 청의 순서로 각각 다음의 사진공정을 이용하여 도포 하였다. 범용적으로 사용되는 칼라 레지스트 조성물 (동진쎄미켐 사제, 상품명: DCR-725S)을 스핀 코팅하여 최종 막두께가 1.7 ㎛가 되도록 도포하였다. 이어서, 핫 플레이트에서 상기 레지스트막을 90 ℃에서 120초간 프리베이크(pre-bake)하였다. 계속해서, 노광하고 1% 수산화칼륨(KOH) 현상액으로 상온에서 60초 현상한 후 오븐에서 상기 패턴이 형성된 시편을 220 ℃에서 20분간 하드 베이크하였다.Color filter patterns were made on LCD corning glass with Cr / CrOx deposited on the bottom, and color resist was applied using the following photo process in the order of red, green, and blue. A universally used color resist composition (trade name: DCR-725S available from Dongjin Semichem Co., Ltd.) was spin coated to apply a final film thickness of 1.7 μm. Subsequently, the resist film was pre-baked on a hot plate at 90 DEG C for 120 seconds. Subsequently, after exposing and developing for 60 seconds at room temperature with 1% potassium hydroxide (KOH) developer, the specimen in which the said pattern was formed was hard-baked for 20 minutes at 220 degreeC.
칼라color 레지스트Resist 제거 시험 Removal test
상기 제조된 시편을 온도 50 ℃에서 칼라 레지스트 제거를 위한 박리액 조성물에 각각 2분, 5분, 10분간 침지시켰다. 계속하여, 상기 시편을 칼라레지스트 박리액 조성물로부터 꺼낸 후, 초순수로 수세하고 질소가스로 건조한 후, 패턴내에 칼라레지스트가 잔류하는지 여부를 주사전자현미경(SEM; 히다찌사, 모델명 S-4100)으로 검사하여 칼라레지스트 제거 성능을 다음과 같은 기준에 의거하여 평가하고 그 결과를 하기 표 3에 나타냈다.The prepared specimen was immersed in a stripper composition for removing color resist at a temperature of 50 ° C. for 2 minutes, 5 minutes, and 10 minutes, respectively. Subsequently, the specimen was removed from the color resist stripper composition, washed with ultrapure water and dried with nitrogen gas, and then inspected with a scanning electron microscope (SEM; Hitachi, model name S-4100) to see if the color resist remained in the pattern. The color resist removal performance was evaluated based on the following criteria and the results are shown in Table 3 below.
◎ : 모두 완전히 제거된 경우.◎: When all are removed completely.
○ : 70% 제거된 경우.○: 70% removed.
△ : 30% 제거된 경우.(Triangle | delta): When removed 30%.
× : 모두 제거되지 않은 경우×: not all removed
[표 3][Table 3]
상기 표 3에서 알 수 있듯이, 실시예 1 내지 12의 경우는 침지초기에도 적, 녹, 청 패턴 제거율이 우수하고 5분이 경과되면 완전히 제거된 반면, 비교예 1 내지 22의 경우는 초기에는 적, 녹, 청 패턴이 전혀 제거되지 않았고, 5분이 경과되어도 일부 패턴이 남아 있어 더 오랜시간이 경과되어야만 모든 패턴이 제거되었다.As can be seen in Table 3, Examples 1 to 12 are excellent in red, green, and blue pattern removal rate even in the initial immersion and completely removed after 5 minutes, whereas Comparative Examples 1 to 22 are initially red, The green and blue patterns were not removed at all, and after 5 minutes, some patterns remained. All patterns were removed only after a longer time.
상기한 바와 같이, 본 발명에 따른 칼라 레지스트 박리액 조성물은 칼라 레 지스트를 짧은 시간 내에 용이하게 제거할 수 있으며, 후속의 린스 공정에서 이소프로필알콜, 디메틸설폭사이드와 같은 유기용제를 사용할 필요 없이 물만으로 린스할 수 있는 장점이 있다.As described above, the color resist stripper composition according to the present invention can easily remove the color resist in a short time, and in the subsequent rinsing step, water is not required to use organic solvents such as isopropyl alcohol and dimethyl sulfoxide. There is an advantage that can be rinsed only.
Claims (7)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007002178A JP4906516B2 (en) | 2006-01-11 | 2007-01-10 | Color resist stripping composition for TFT-LCD |
TW096101161A TWI408517B (en) | 2006-01-11 | 2007-01-11 | A color resist remover composition for tft-lcd preparation |
CN2007100012672A CN101000468B (en) | 2006-01-11 | 2007-01-11 | Color resist stripping liquid composition for thin film transistor liquid crystal display |
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CN101373339B (en) * | 2007-08-23 | 2011-12-07 | 安集微电子(上海)有限公司 | Cleaning agent of thick film photoresist |
KR101488265B1 (en) | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | Peeling composition and peeling method |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
KR101880303B1 (en) * | 2011-11-04 | 2018-07-20 | 동우 화인켐 주식회사 | Photoresist stripper composition |
KR102040064B1 (en) * | 2012-12-24 | 2019-11-04 | 동우 화인켐 주식회사 | color resist stripper composition |
JP6487630B2 (en) * | 2014-05-20 | 2019-03-20 | 化研テック株式会社 | Stock solution for cleaning composition, cleaning composition and cleaning method |
KR20160017477A (en) * | 2014-08-06 | 2016-02-16 | 동우 화인켐 주식회사 | Cleaning composition |
WO2018058341A1 (en) | 2016-09-28 | 2018-04-05 | Dow Global Technologies Llc | Sulfoxide/glycol ether based solvents for use in the electronics industry |
KR20180087624A (en) * | 2017-01-25 | 2018-08-02 | 동우 화인켐 주식회사 | Resist stripper composition |
JP7291704B2 (en) * | 2018-07-27 | 2023-06-15 | 花王株式会社 | cleaning method |
WO2020021721A1 (en) * | 2018-07-27 | 2020-01-30 | 花王株式会社 | Detergent composition for resin mask removal |
JP2021165831A (en) * | 2020-04-01 | 2021-10-14 | ナガセケムテックス株式会社 | Photoresist stripper |
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KR100518714B1 (en) * | 2002-02-19 | 2005-10-05 | 주식회사 덕성 | Compostition of resist stripper |
KR101016724B1 (en) * | 2003-08-01 | 2011-02-25 | 주식회사 동진쎄미켐 | Thinner composition for removing the photosensitive resin composition |
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