JP6720204B2 - シリコン負極活物質及びその製造方法 - Google Patents
シリコン負極活物質及びその製造方法 Download PDFInfo
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- JP6720204B2 JP6720204B2 JP2017544763A JP2017544763A JP6720204B2 JP 6720204 B2 JP6720204 B2 JP 6720204B2 JP 2017544763 A JP2017544763 A JP 2017544763A JP 2017544763 A JP2017544763 A JP 2017544763A JP 6720204 B2 JP6720204 B2 JP 6720204B2
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- silicon
- layer
- carbon
- active material
- negative electrode
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 42
- 239000007787 solid Substances 0.000 claims description 32
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- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- AEIJTFQOBWATKX-UHFFFAOYSA-N octane-1,2-diol Chemical compound CCCCCCC(O)CO AEIJTFQOBWATKX-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 150000003138 primary alcohols Chemical class 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- OWOMRZKBDFBMHP-UHFFFAOYSA-N zinc antimony(3+) oxygen(2-) Chemical compound [O--].[Zn++].[Sb+3] OWOMRZKBDFBMHP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01M4/583—Carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
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- H01M4/36—Selection of substances as active materials, active masses, active liquids
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- H01M4/88—Processes of manufacture
- H01M4/8878—Treatment steps after deposition of the catalytic active composition or after shaping of the electrode being free-standing body
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Description
常温の蒸留水に炭素前駆体であるPVPを溶解させ、前記PVPの水溶液に、シリコンコアの表面にシリコン酸化物層が形成された各中間粒子を分散させた。前記シリコンコアの半径は平均20nmであって、前記シリコン酸化物層の厚さは2nmであった。十分な量の固形有機層を形成させるために、PANの容量は10wt%として過量含有させた。
実験例1と同様に、常温の蒸留水に炭素前駆体であるPVPを溶解させ、前記PVPの水溶液に、シリコンコアの表面にシリコン酸化物層が形成された各シリコン粒子を分散させた。前記シリコン粒子は、実験例1のシリコン粒子と同一であり、シリコンコアの半径は平均20nmであって、シリコン酸化物層の厚さは約2nmである。
Claims (10)
- シリコンコア、及び前記シリコンコア上にシリコン酸化物層を有する第1中間粒子を形成する段階;
前記第1中間粒子上に第1固形有機層をコーティングすることによって第2中間粒子を形成する段階;
前記第2中間粒子を第1温度で熱処理し、第1固形有機層を炭素層に変換させることによって第3中間粒子を形成する段階;及び
前記第3中間粒子を第2温度で熱処理し、前記シリコン酸化物層と前記炭素層との間にシリコン炭化物層を形成し、前記シリコン酸化物層及び前記シリコン炭化物層を含む二重クランピング層を形成する段階;を含むシリコン負極活物質の製造方法。 - 前記シリコン酸化物層は前記シリコン炭化物層のシリコンソースである、請求項1に記載のシリコン負極活物質の製造方法。
- 前記第1温度は700℃〜1,100℃の範囲内である、請求項1に記載のシリコン負極活物質の製造方法。
- 前記第2温度は1,150℃〜1,300℃の範囲内である、請求項1に記載のシリコン負極活物質の製造方法。
- 前記第1中間粒子の前記シリコン酸化物層の厚さは、前記二重クランピング層の厚さに対して50%〜150%の範囲内である、請求項1に記載のシリコン負極活物質の製造方法。
- 前記第3中間粒子の前記シリコン酸化物層の厚さは、前記炭素層の厚さの1倍〜10倍の範囲のサイズを有する、請求項1に記載のシリコン負極活物質の製造方法。
- 前記二重クランピング層の厚さは0.5nm〜20nmであって、前記シリコンコアの半径に対する前記二重クランピング層の厚さの割合は0.1%〜10%の範囲内である、請求項1に記載のシリコン負極活物質の製造方法。
- 前記第2中間粒子を形成する段階は、
炭素前駆体を含む分散溶液を準備する段階;
前記分散溶液中に前記第1中間粒子を分散させる段階;及び
前記分散溶液で濡らされた前記第1中間粒子を収得して乾燥させる段階;を含む、請求項1に記載のシリコン負極活物質の製造方法。 - 前記炭素前駆体は、炭化水素系、アルコール系、エーテル系及びエステル系化合物からなる群から選ばれた一つの溶液又は2以上の混合溶液;又は、前記溶液又は水中に溶解された炭素含有天然高分子物質及び炭素含有合成高分子物質のうちのいずれか一つ又はこれらの混合物;を含む、請求項8に記載のシリコン負極活物質の製造方法。
- 前記炭素含有高分子物質は、キトサン、グルコース、スクロース、マルトース、ラクトース、デンプン、グリコーゲン、ポリスチレン(PS)、ポリエチレン(PE)、ポリプロピレン(PP)、ポリビニルクロライド(PVC)、ポリアクリロニトリル(PAN)、ポリエチレン(PE)、ポリアクリル酸(PAA)、ポリビニルピロリドン(PVP)又はこれらの混合物を含む、請求項9に記載のシリコン負極活物質の製造方法。
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- 2015-02-24 JP JP2017544763A patent/JP6720204B2/ja active Active
- 2015-02-24 US US15/553,294 patent/US10673072B2/en active Active
- 2015-02-24 EP EP15883413.5A patent/EP3264505A4/en not_active Withdrawn
- 2015-02-24 CN CN201580076891.1A patent/CN107408681B/zh active Active
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JP2018512702A (ja) | 2018-05-17 |
EP3264505A4 (en) | 2018-08-01 |
WO2016137024A1 (ko) | 2016-09-01 |
US20180034056A1 (en) | 2018-02-01 |
EP3264505A1 (en) | 2018-01-03 |
CN107408681B (zh) | 2021-03-12 |
CN107408681A (zh) | 2017-11-28 |
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