JP6412042B2 - レーザ発振器 - Google Patents
レーザ発振器 Download PDFInfo
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- JP6412042B2 JP6412042B2 JP2016066594A JP2016066594A JP6412042B2 JP 6412042 B2 JP6412042 B2 JP 6412042B2 JP 2016066594 A JP2016066594 A JP 2016066594A JP 2016066594 A JP2016066594 A JP 2016066594A JP 6412042 B2 JP6412042 B2 JP 6412042B2
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- module
- insulating member
- laser oscillator
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
- H01S5/405—Two-dimensional arrays
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
LDモジュールユニット1は、1個もしくは複数個のLD光源を有するLDモジュール10を備えている。LDモジュール10は、LD(Laser Diode)11を有しており、LD電源(図示せず)から電力が供給されることにより、レーザを放射する。LDモジュールユニット1がDDL(Direct Diode Laser)により構成される場合には、レーザは直接加工等に用いられ、LDモジュールユニット1がファイバレーザにより構成される場合には、レーザは励起光として用いられる。安定したビーム品質を長期間維持するために、LDモジュール10は、冷却されることが重要であり、冷却板21上に設置される。
例えば、レーザ発振器の構成、より具体的には、LDモジュールを冷却板に対して固定する構成は、上述した実施形態における各部の構成に限定されない。
10、10E LDモジュール
21 冷却板
23、23A 伝熱性絶縁部材
25 弾性絶縁部材
25B、25D、25E 絶縁部材
26B 金属製の板
27C、27G 格納筐体
Claims (3)
- 1個もしくは複数個のLD光源を有するLDモジュールを備えるレーザ発振器であって、
前記LDモジュールは、冷却板の上に設置された伝熱性絶縁部材の上に設置され、前記LDモジュールを覆うようにして取囲んで前記LDモジュールの上方から当接して前記LDモジュールを下方へ押し付けて前記冷却板に固定される弾性絶縁部材を介して、前記冷却板に対して固定され、
前記弾性絶縁部材としてゴム材料が用いられるレーザ発振器。 - 前記伝熱性絶縁部材は粘着性を有する請求項1記載のレーザ発振器。
- 前記弾性絶縁部材は、弾性変形可能な金属製の板と、絶縁部材とを有する請求項2記載のレーザ発振器。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016066594A JP6412042B2 (ja) | 2016-03-29 | 2016-03-29 | レーザ発振器 |
US15/450,052 US10516249B2 (en) | 2016-03-29 | 2017-03-06 | Laser oscillator |
DE102017104699.2A DE102017104699A1 (de) | 2016-03-29 | 2017-03-07 | Laseroszillator |
CN201710160467.6A CN107240855B (zh) | 2016-03-29 | 2017-03-17 | 激光振荡器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016066594A JP6412042B2 (ja) | 2016-03-29 | 2016-03-29 | レーザ発振器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017183429A JP2017183429A (ja) | 2017-10-05 |
JP6412042B2 true JP6412042B2 (ja) | 2018-10-24 |
Family
ID=59885856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016066594A Expired - Fee Related JP6412042B2 (ja) | 2016-03-29 | 2016-03-29 | レーザ発振器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10516249B2 (ja) |
JP (1) | JP6412042B2 (ja) |
CN (1) | CN107240855B (ja) |
DE (1) | DE102017104699A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109417276B (zh) * | 2016-06-30 | 2021-10-15 | 新唐科技日本株式会社 | 半导体激光器装置、半导体激光器模块及焊接用激光器光源系统 |
JP6640811B2 (ja) | 2017-10-06 | 2020-02-05 | ファナック株式会社 | 結露防止機能を備えたレーザ装置 |
WO2019205163A1 (en) * | 2018-04-28 | 2019-10-31 | SZ DJI Technology Co., Ltd. | Light detection and ranging sensors with multiple emitters and multiple receivers, and associated systems and methods |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350386Y2 (ja) * | 1974-01-17 | 1978-12-02 | ||
JPH11202166A (ja) * | 1998-01-13 | 1999-07-30 | Fujikura Ltd | 光モジュール並びに光モジュールと光ファイバとの接続部 |
DE19942470B4 (de) | 1998-09-08 | 2013-04-11 | Fujitsu Ltd. | Optisches Halbeitermodul und Verfahren zum Herstellen eines optischen Halbleitermoduls |
JP4079604B2 (ja) | 2001-05-30 | 2008-04-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP3885536B2 (ja) | 2001-09-25 | 2007-02-21 | ヤマハ株式会社 | 熱電装置 |
JP2003258361A (ja) * | 2002-03-06 | 2003-09-12 | Mitsubishi Cable Ind Ltd | 光学素子設置構造 |
JP3737769B2 (ja) * | 2002-03-28 | 2006-01-25 | 株式会社東芝 | 半導体レーザ装置 |
JP4134695B2 (ja) * | 2002-11-21 | 2008-08-20 | 住友電気工業株式会社 | 光モジュール |
JP2004177655A (ja) * | 2002-11-27 | 2004-06-24 | Noritsu Koki Co Ltd | レーザー光源装置及び写真処理装置 |
JP2005093507A (ja) * | 2003-09-12 | 2005-04-07 | Hitachi Cable Ltd | 光伝送モジュール |
JP4559058B2 (ja) * | 2003-11-07 | 2010-10-06 | リコー光学株式会社 | 光源ユニットの光軸設定方法および光源ユニット、光走査装置、画像読取装置および画像形成装置 |
JP3909853B2 (ja) * | 2004-04-26 | 2007-04-25 | 株式会社東芝 | 半導体レーザ装置及び半導体レーザ組立体 |
JP2006060976A (ja) * | 2004-08-23 | 2006-03-02 | Nidec Shibaura Corp | モータ |
JP4643703B2 (ja) * | 2008-11-21 | 2011-03-02 | 株式会社東芝 | 半導体装置の固定具及びその取付構造 |
JP5381353B2 (ja) * | 2009-06-05 | 2014-01-08 | 三菱電機株式会社 | レーザダイオード装置 |
GB201012829D0 (en) * | 2010-07-30 | 2010-09-15 | Oclaro Technology Ltd | Enclosure for a laser package and laser package comprising same |
JP5869913B2 (ja) | 2012-02-28 | 2016-02-24 | 株式会社日立エルジーデータストレージ | レーザ光源モジュール |
JP5686127B2 (ja) * | 2012-11-16 | 2015-03-18 | 日立金属株式会社 | 信号伝送装置 |
WO2014184844A1 (ja) | 2013-05-13 | 2014-11-20 | 三菱電機株式会社 | 半導体レーザ装置 |
CN107851960A (zh) * | 2015-07-16 | 2018-03-27 | 古河电气工业株式会社 | 半导体激光模块 |
US10043730B2 (en) * | 2015-09-28 | 2018-08-07 | Xilinx, Inc. | Stacked silicon package assembly having an enhanced lid |
-
2016
- 2016-03-29 JP JP2016066594A patent/JP6412042B2/ja not_active Expired - Fee Related
-
2017
- 2017-03-06 US US15/450,052 patent/US10516249B2/en active Active
- 2017-03-07 DE DE102017104699.2A patent/DE102017104699A1/de not_active Ceased
- 2017-03-17 CN CN201710160467.6A patent/CN107240855B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017183429A (ja) | 2017-10-05 |
US20170288368A1 (en) | 2017-10-05 |
CN107240855A (zh) | 2017-10-10 |
DE102017104699A1 (de) | 2017-10-05 |
CN107240855B (zh) | 2019-07-26 |
US10516249B2 (en) | 2019-12-24 |
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