JP5752254B2 - 半導体デバイス - Google Patents
半導体デバイス Download PDFInfo
- Publication number
- JP5752254B2 JP5752254B2 JP2013529752A JP2013529752A JP5752254B2 JP 5752254 B2 JP5752254 B2 JP 5752254B2 JP 2013529752 A JP2013529752 A JP 2013529752A JP 2013529752 A JP2013529752 A JP 2013529752A JP 5752254 B2 JP5752254 B2 JP 5752254B2
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- substrate
- passivation layer
- layer
- type dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000010410 layer Substances 0.000 claims description 107
- 239000002019 doping agent Substances 0.000 claims description 71
- 239000000758 substrate Substances 0.000 claims description 44
- 238000002161 passivation Methods 0.000 claims description 43
- 239000012212 insulator Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 22
- 239000011229 interlayer Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 27
- 229910052735 hafnium Inorganic materials 0.000 description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008901 benefit Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 150000002910 rare earth metals Chemical class 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
- H10D62/314—Channel regions of field-effect devices of FETs of IGFETs having vertical doping variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
- H10D62/605—Planar doped, e.g. atomic-plane doped or delta-doped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10180822 | 2010-09-28 | ||
| EP10180822.8 | 2010-09-28 | ||
| PCT/IB2011/054162 WO2012042442A1 (en) | 2010-09-28 | 2011-09-22 | Semiconductor device with a gate stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013543257A JP2013543257A (ja) | 2013-11-28 |
| JP5752254B2 true JP5752254B2 (ja) | 2015-07-22 |
Family
ID=44789561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013529752A Expired - Fee Related JP5752254B2 (ja) | 2010-09-28 | 2011-09-22 | 半導体デバイス |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5752254B2 (zh) |
| CN (1) | CN103125014B (zh) |
| DE (1) | DE112011103249B4 (zh) |
| GB (1) | GB2497257B (zh) |
| WO (1) | WO2012042442A1 (zh) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001144087A (ja) * | 1999-11-12 | 2001-05-25 | Natl Research Inst For Metals Ministry Of Education Culture Sports Science & Technology | ５族元素による酸化物／半導体界面の安定化方法と安定化半導体 |
| KR20010110769A (ko) * | 2000-02-17 | 2001-12-13 | 롤페스 요하네스 게라투스 알베르투스 | 반도체 디바이스 및 그 제조 방법 |
| JP2004006959A (ja) * | 2001-04-12 | 2004-01-08 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US6852645B2 (en) * | 2003-02-13 | 2005-02-08 | Texas Instruments Incorporated | High temperature interface layer growth for high-k gate dielectric |
| WO2005101477A1 (ja) * | 2004-04-14 | 2005-10-27 | Fujitsu Limited | 半導体装置及びその製造方法 |
| US20060086950A1 (en) * | 2004-10-13 | 2006-04-27 | Matty Caymax | Method for making a passivated semiconductor substrate |
| CN100583450C (zh) * | 2005-03-11 | 2010-01-20 | 富士通微电子株式会社 | 半导体器件及其制造方法 |
| US7446380B2 (en) | 2005-04-29 | 2008-11-04 | International Business Machines Corporation | Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS |
| WO2009156954A1 (en) * | 2008-06-25 | 2009-12-30 | Nxp B.V. | Interfacial layer regrowth control in high-k gate structure for field effect transistor |
-
2011
- 2011-09-22 GB GB1306306.0A patent/GB2497257B/en active Active
- 2011-09-22 DE DE112011103249.8T patent/DE112011103249B4/de active Active
- 2011-09-22 WO PCT/IB2011/054162 patent/WO2012042442A1/en active Application Filing
- 2011-09-22 CN CN201180046652.3A patent/CN103125014B/zh not_active Expired - Fee Related
- 2011-09-22 JP JP2013529752A patent/JP5752254B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE112011103249B4 (de) | 2014-01-23 |
| GB2497257B (en) | 2013-11-06 |
| CN103125014A (zh) | 2013-05-29 |
| DE112011103249T5 (de) | 2013-08-14 |
| CN103125014B (zh) | 2015-09-23 |
| JP2013543257A (ja) | 2013-11-28 |
| WO2012042442A1 (en) | 2012-04-05 |
| GB201306306D0 (en) | 2013-05-22 |
| GB2497257A (en) | 2013-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11456219B2 (en) | Gate-all-around FETs having uniform threshold voltage | |
| US20190318966A1 (en) | High k metal gate stack with single work-function metal | |
| US9768030B2 (en) | Method for forming tunnel MOSFET with ferroelectric gate stack | |
| US6784101B1 (en) | Formation of high-k gate dielectric layers for MOS devices fabricated on strained lattice semiconductor substrates with minimized stress relaxation | |
| KR101375833B1 (ko) | 게르마늄 나노로드를 구비한 전계효과 트랜지스터 및 그제조방법 | |
| JP5535706B2 (ja) | 半導体装置の製造方法 | |
| US7863126B2 (en) | Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region | |
| US7928502B2 (en) | Transistor devices with nano-crystal gate structures | |
| US8901616B2 (en) | Gate stack including a high-K gate dielectric that is optimized for low voltage applications | |
| US20060234433A1 (en) | Transistors and methods of manufacture thereof | |
| US7507632B2 (en) | Semiconductor device and manufacturing method thereof | |
| Nakakita et al. | Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers | |
| JP4719161B2 (ja) | トランジスタの製造方法 | |
| JP2018537860A (ja) | 可変ゲート長の垂直電界効果トランジスタ構造及びその製造方法 | |
| US20130032881A1 (en) | Asymmetric Source-Drain Field Effect Transistor and Method of Making | |
| US20120012939A1 (en) | Semiconductor device and method of manufacturing the same | |
| US20080050898A1 (en) | Semiconductor devices and methods of manufacture thereof | |
| US20160163814A1 (en) | Replacement gate pfet materials having improved nbti performance | |
| JP5752254B2 (ja) | 半導体デバイス | |
| US20080023765A1 (en) | Semiconductor Devices and Methods of Fabricating the Same | |
| US10431672B1 (en) | Method of forming a III-V and Zn based finFET structure using low temperature deposition techniques | |
| Verheyen et al. | Demonstration of recessed SiGe S/D and inserted metal gate on HfO/sub 2/for high performance pFETs. | |
| JP2010123669A (ja) | 半導体装置およびその製造方法 | |
| Oh et al. | Additive mobility enhancement and off-state current reduction in SiGe channel pMOSFETs with optimized Si Cap and high-k metal gate stacks | |
| JP2007318012A (ja) | 半導体装置およびその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140508 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141216 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141217 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150310 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150421 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150519 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5752254 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| LAPS | Cancellation because of no payment of annual fees |